IRL2703 PD A. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.04Ω I D = 24A

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1 Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve the owest possibe on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient device for use in a wide variety of appications. G P IRL2703 HEXFET Power MOSFET S V SS = 30V R S(on) = 0.04Ω I = 24 The TO-220 package is universay preferred for a commercia-industria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO-220 contribute to its wide acceptance throughout the industry. bsoute Maximum Ratings Therma Resistance TO-220B Parameter Max. Units T C = 25 C Continuous rain Current, V 0V 24 T C = 00 C Continuous rain Current, V 0V 7 I M Pused rain Current Å 96 C = 25 C Power issipation 45 W Linear erating Factor 0.30 W/ C V GS Gate-to-Source Votage ±6 V E S Singe Puse vaanche Energy Ç 77 mj I R vaanche CurrentÅ 4 E R Repetitive vaanche EnergyÅ 4.5 mj dv/dt Peak iode Recovery dv/dt É 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Sodering Temperature, for 0 seconds 300 (.6mm from case) Mounting torque, 6-32 or M3 screw. 0 bf in (.N m) Parameter Min. Typ. Max. Units R θjc Junction-to-Case 3.3 R θcs Case-to-Sink, Fat, Greased Surface 0.50 C/W R θj Junction-to-mbient 62 8/27/97

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 30 V V GS = 0V, I = 250µ ΔV (BR)SS /ΔT J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance V GS = 0V, I = 4 Ñ Ω V GS = 4.5V, I = 2 Ñ V GS(th) Gate Threshod Votage.0 V V S = V GS, I = 250µ g fs Forward Transconductance 6.4 S V S = 25V, I = 4 25 V S = 30V, V GS = 0V I SS rain-to-source Leakage Current µ 250 V S = 24V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 00 V GS = 6V n Gate-to-Source Reverse Leakage -00 V GS = -6V Q g Tota Gate Charge 5 I = 4 Q gs Gate-to-Source Charge 4.6 nc V S = 24V Q gd Gate-to-rain ("Mier") Charge 9.3 V GS = 4.5V, See Fig. 6 and 3 Ñ t d(on) Turn-On eay Time 8.5 V = 5V t r Rise Time 40 I = 4 ns t d(off) Turn-Off eay Time 2 R G = 2Ω, V GS =4.5V t f Fa Time 20 R =.0Ω, See Fig. 0 Ñ Between ead, L Interna rain Inductance 4.5 6mm (0.25in.) nh from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 450 V GS = 0V C oss Output Capacitance 20 pf V S = 25V C rss Reverse Transfer Capacitance 0 ƒ =.0MHz, See Fig. 5 G S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 24 (Body iode) showing the G I SM Pused Source Current 96 integra reverse (Body iode) Å p-n junction diode. V S iode Forward Votage.3 V T J = 25 C, I S = 4, V GS = 0V Ñ t rr Reverse Recovery Time ns T J = 25 C, I F = 4 Q rr Reverse RecoveryCharge nc di/dt = 00/µs Ñ t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L ) S Notes: Å Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Ç V = 5V, starting T J = 25 C, L = 570µH R G = 25Ω, I S = 4. (See Figure 2) É I S 4, di/dt 40/µs, V V (BR)SS, T J 75 C Ñ Puse width 300µs; duty cyce 2%.

3 I, rain-to-source Current ( ) VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE W ITH T J = 25 C V S, rain-to-source Votage (V ) I, rain-to-source Current () VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE W ITH 0. T J = 75 C V S, rain-to-source Votage (V ) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-s ource C urrent ( ) 00 0 T = 25 C J V S= 5V 20µs P ULS E W IT H V GS T = 75 C J, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) I = 24 V GS = 0V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature

4 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = MHz C is s = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd V GS, Gate-to-Source Votage (V) I = 4 V S = 24V V S = 5V V S, rain-to-source Votage (V ) FOR TEST CIRCUIT SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J I, rain Current ( ) OPERTION IN THIS RE LIMITE BY RS(on) 0µs 00µs ms V GS = 0V V S, Source-to- rain Votage (V ) T C = 25 C T 0ms J = 75 C S inge Puse 0 00 V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea

5 24 V S R I, rain C urrent (m ps) T C, Case Temperature ( C ) Fig 9. Maximum rain Current Vs. Case Temperature Fig 0a. Switching Time Test Circuit V S 90% R G V GS 5.0V Puse Width µs uty Factor 0. %.U.T. 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms - V Therma Response (Z thjc ) 0. = SINGLE PULS E (THERML RESPONSE) Peak T J = P M x Z thjc T C t, Rectanguar Puse uration (se c) Notes:. uty factor = t / t 2 P M t t 2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case

6 L V S.U.T. R G V V I S t p 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)SS t p E S, Singe Puse vaanche Energy (mj) I TOP BOTTOM 4 V = 5V Starting T J, Junction Temperature ( C) V S V Fig 2c. Maximum vaanche Energy Vs. rain Current I S Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as.u.t. 50KΩ 4.5 V Q GS Q G Q G 2V.2µF.3µF.U.T. V - S V GS V G 3m Charge I G I Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T É - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer Ç - - Ñ Å R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 4. For N-Channe HEXFETS

8 Package Outine TO-220B Outine imensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.03) 0.54 (.45) 0.29 (.405) 3.78 (.4 9) 3.54 (.3 9) (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.25 5) 6. 0 (.24 0) (.0 4 5) M IN LE SSIGNMENTS - G TE 2 - R IN 3 - S O U R C E 4 - R IN 4.09 (.555) 3.47 (.530) (.6 0) (.4 0) 3X.40 (.055).5 (.045) 2.54 (.00) 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 3X (.02 2) (.0 8) 2.92 (.5) 2.64 (.04) 2X NOTES: IM E N S IO N IN G & TO L ER N C IN G P ER N S I Y 4.5 M, O U TL IN E C O N FO R M S TO JE E C OU T LIN E TO B. 2 C O N TR OL LIN G IM E N S IO N : IN C H 4 H E TS IN K & L E M E S U R E M E N TS O N O T IN C L U E BU R R S. Part Marking Information TO-220B EXMPLE : THIS IS N IRF00 W ITH SSEMBLY LOT COE 9BM INTERNTIONL RECTIFIER LOGO SSEMBLY LOT COE IRF B M PRT NUMBER TE COE (YYW W) YY = YER WW = WEEK WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (30) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 007 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #0-02 Tan Boon Liat Buiding, Singapore 036 Te: ata and specifications subject to change without notice. 8/97

IRLZ34N PD B. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.035Ω I D = 30A

IRLZ34N PD B. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.035Ω I D = 30A Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced