IRLML6302 PD D. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.60Ω

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1 P IRLML6302 HEXFET Power MOSFET Generation V Technoogy Utra Low OnResistance PChanne MOSFET SOT23 Footprint Low Profie (<.mm) vaiabe in Tape and Ree G Fast Switching S V SS = 20V R S(on) = 0.60Ω escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. customized eadframe has been incorporated into the standard SOT23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCI cards. Micro3 bsoute Maximum Ratings Parameter Max. Units T = 25 C Continuous rain Current, V 4.5V 0.78 T = 70 C Continuous rain Current, V 4.5V 0.62 I M Pused rain Current 4.9 = 25 C Power issipation 540 mw Linear erating Factor 4.3 mw/ C V GS GatetoSource Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Therma Resistance Parameter Typ. Max. Units R θj Maximum Junctiontombient 230 C/W 8/25/97

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient 4.9 mv/ C Reference to 25 C, I = m R S(ON) Static raintosource OnResistance 0.60 V GS = 4.5V, I = 0.6 ƒ Ω 0.90 V GS = 2.7V, I = 0.3 ƒ V GS(th) Gate Threshod Votage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance 0.56 S V S = V, I = V S = 6V, V GS = 0V I SS raintosource Leakage Current µ 25 V S = 6V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 0 V GS = 2V n GatetoSource Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge I = 0.6 Q gs GatetoSource Charge nc V S = 6V Q gd Gatetorain ("Mier") Charge.0.5 V GS = 4.5V, See Fig. 6 and 9 ƒ t d(on) TurnOn eay Time 3 V = V t r Rise Time 8 I = 0.6 ns t d(off) TurnOff eay Time 22 R G = 6.2Ω t f Fa Time 22 R = 6Ω, See Fig. ƒ C iss Input Capacitance 97 V GS = 0V C oss Output Capacitance 53 pf V S = 5V C rss Reverse Transfer Capacitance 28 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 0.54 (Body iode) showing the I SM Pused Source Current integra reverse 4.9 (Body iode) pn junction diode. V S iode Forward Votage.2 V T J = 25 C, I S = 0.6, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 0.6 Q rr Reverse RecoveryCharge nc di/dt = 0/µs ƒ G S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) I S 0.6, di/dt 76/µs, V V (BR)SS, T J 50 C ƒ Puse width 300µs; duty cyce 2%. Surface mounted on FR4 board, t 5sec.

3 I, ra in to S ourc e C u rren t ( ) 0. VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V I, raintosource Current () 0. VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20µs PULSE WITH.5V T J = 25 C V S, raintosource Votage (V) 20µs PULSE WITH 0.0 T J = 50 C 0. V S, raintosource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, raintosource C urrent () T J = 25 C T J = 50 C 0. V S = 0V 20µs PULSE W ITH V GS, GatetoSource Votage (V) R S(on), raintos ource On Resistance (Normaized) I = 0.6 V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature

4 C, Capacitance (pf) 80 V GS = 0V, f = MH z 60 C iss = C gs C gd, C ds SHORTE C rss = Cgd 40 C iss C oss = C ds C gd 20 C oss 0 80 C rss V S, raintosource Votage (V) V GS, GatetoSource V otage (V ) I = 0.6 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. raintosource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I S, R everse rain Current () T J = 50 C T J = 25 C 0. V GS = 0V V S, Sourcetorain Votage (V) I, rain C urrent () OPERTION IN THIS RE LIMITE BY R S(on) 0µs ms ms T = 25 C T J = 50 C Singe Puse 0. 0 V S, raintosource Votage (V) Fig 7. Typica Sourcerain iode Forward Votage Fig 8. Maximum Safe Operating rea

5 Q G V S R 4.5V Q GS Q G R G V GS.U.T. V V G Charge Fig 9a. Basic Gate Charge Waveform 4.5V Puse Width µs uty Factor 0. % Fig a. Switching Time Test Circuit 2V Current Reguator Same Type as.u.t..2µf 50KΩ.3µF V S 90%.U.T. V S V GS % V GS t d(on) t r t d(off) t f 3m I G I Current Samping Resistors Fig 9b. Gate Charge Test Circuit Fig b. Switching Time Waveforms 00 Therma Response (Z thj ) 0 = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj T t, Rectanguar Puse uration (sec) PM t t 2 Fig. Maximum Effective Transient Therma Impedance, Junctiontombient

6 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer ** V GS * R G dv/dt controed by R G I S controed by uty Factor "".U.T. evice Under Test * V * Reverse Poarity for PChanne ** Use PChanne river for PChanne Measurements river Gate rive Period P.W. = P.W. Period [ V GS =V ] ***.U.T. I S Waveform Reverse Recovery Current Reppied Votage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Rippe 5% Forward rop *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 3. For PChanne HEXFETS [ V ] [ ] I S

7 Package Outine SOT23 Outine imensions are shown in miimeters (inches) 3 E C B 3X B 3 2 e e 0. (.004) M C S B S 3 LE SSIGNMENTS G TE 2 SO URCE 3 RIN H 0.20 (.008 ) M M (.003) θ L 3X C 3X INCHES MILLIMETERS IM M IN M X M IN M X B C e.0750 BSIC.90 BSIC e.0375 BSIC 0.95 BSIC E H L θ MINIMUM RECOMMENE FOOTPRINT 0.80 (.03 ) 3 X 0.90 (.035 ) 3 X 2.00 (.079 ) NOTES:. IMENSIONING & TOLERNCING PER NSI Y4.5M CONTROLLING IMENSION : INCH. 3 IMENSIONS O NOT INCLUE MOL FLSH (.037 ) 2 X Part Marking Information SOT23 EX MP LE : THIS IS N IRLM L6302 PR T NU MBER Y = YER C OE W = WEEK CO E C PRT NUMBER EXMPLES: = IRLM L2402 B = IRLM L2803 C = IRLM L6302 = IRLM L53 TOP YW TE COE TE COE EXMPLES: YW W = 9503 = 5C YW W = 9532 = EF WORK YE R Y W EE K W B C X 25 Y 26 Z WORK YE R Y W E EK W B 28 B 2003 C 29 C E 996 F 997 G 998 H 999 J 2000 K 50 X 5 Y 52 Z W ORK W EEK = (26) IF PRECEE BY LST IGIT OF CLENER YER W ORK WEEK = ( 2752) IF PRECE E BY LETTER

8 Tape & Ree Information SOT23 imensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEE IRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) M X (.390 ) 8.40 (.33 ) NO TES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI54. WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Buiding, Singapore 036 Te: ata and specifications subject to change without notice. 8/97

IRLML2803 PD C. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.25Ω

IRLML2803 PD C. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.25Ω Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (