IRF7403 PD B. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.022Ω PRELIMINARY SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings

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1 HEXFET Power MOFET PRELIMINRY P B IRF7403 l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching Top View escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The O-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. V = 30V R (on) = 0.022Ω O-8 bsolute Maximum Ratings Parameter Max. Units T = 25 C ec. Pulsed rain Current, V V 9.7 T = 25 C Continuous rain Current, V V 8.5 T = 70 C Continuous rain Current, V V 5.4 I M Pulsed rain Current 34 = 25 C Power issipation 2.5 W Linear erating Factor 0.02 W/ C V G Gate-to-ource Voltage ±20 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T TG Junction and torage Temperature Range -55 to 50 C Thermal Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junction-to-mbient 50 C/W 8/25/97

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR) rain-to-ource Breakdown Voltage 30 V V G = 0V, I = 250µ V (BR) / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m R (ON) tatic rain-to-ource On-Resistance V G = V, I = 4.0 ƒ Ω V G = 4.5V, I = 3.4 ƒ V G(th) Gate Threshold Voltage.0 V V = V G, I = 250µ g fs Forward Transconductance 8.4 V = 5V, I = 4.0 I rain-to-ource Leakage Current.0 V = 24V, V G = 0V µ 25 V = 24V, V G = 0V, T J = 25 C Gate-to-ource Forward Leakage 0 V G = 20V I G n Gate-to-ource Reverse Leakage -0 V G = -20V Q g Total Gate Charge 57 I = 4.0 Q gs Gate-to-ource Charge 6.8 nc V = 24V Q gd Gate-to-rain ("Miller") Charge 8 V G = V, ee Fig. 6 and 2 ƒ t d(on) Turn-On elay Time V = 5V t r Rise Time 37 I = 4.0 ns t d(off) Turn-Off elay Time 42 R G = 6.0Ω t f Fall Time 40 R = 3.7Ω, ee Fig. ƒ L Internal rain Inductance 2.5 L Internal ource Inductance 4.0 Between lead tip and center of die contact C iss Input Capacitance 200 V G = 0V C oss Output Capacitance 450 pf V = 25V C rss Reverse Transfer Capacitance 60 ƒ =.0MHz, ee Fig. 5 nh G ource-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous ource Current MOFET symbol 3. (Body iode) showing the I M Pulsed ource Current integral reverse G 34 (Body iode) p-n junction diode. V iode Forward Voltage.0 V T J = 25 C, I = 2.0, V G = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 4.0 Q rr Reverse RecoveryCharge nc di/dt = 0/µs ƒ t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( ee fig. ) ƒ Pulse width 300µs; duty cycle 2%. I 4.0, di/dt 80/µs, V V (BR), T J 50 C urface mounted on FR-4 board, t sec.

3 I, rain-to- ource Current () 00 0 VG TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, rain-to- ource Current () 00 0 VG TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULE WITH T J = 25 C V, rain-to-ource Voltage (V) Fig. Typical Output Characteristics 20µs PULE WITH T J = 50 C V, rain-to-ource Voltage (V) Fig 2. Typical Output Characteristics I, rain-to-ource Current () 00 0 T J = 25 C T J = 50 C V = 50V 5V 20µs PULE WITH V G, Gate-to-ource Voltage (V) R (on), rain-to- ource On Resistance (Normalized) I = 6.7 V G = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature

4 C, Capacitance (pf) C iss C oss C rss V G = 0V, f = M Hz C iss = C gs C gd, C ds HORTE C rss = C gd C oss = C ds C gd 0 0 V, rain-to-ource Voltage (V) V, G ate-to-ource V oltage (V ) G I = 4.0 V = 24V FOR TET CIRCUIT 0 EE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. rain-to-ource Voltage Fig 6. Typical Gate Charge Vs. Gate-to-ource Voltage I, Reverse rain Current () 0 T J = 50 C T J = 25 C T = 25 C ms TJ = 50 C V = 0V 0. G ingle Pulse V, ource-to-rain Voltage (V) I, rain Current () 0 OPERTION IN THI RE LIMITE BY R (on) 0us ms V, rain-to-ource Voltage (V) Fig 7. Typical ource-rain iode Forward Voltage Fig 8. Maximum afe Operating rea

5 V R I, rain Current () Fig a. witching Time Test Circuit V 90% R G V G V Pulse Width µs uty Factor 0. %.U.T. - V T C, Case Temperature ( C) % V G t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. mbient Temperature Fig b. witching Time Waveforms 0 Thermal Response (Z thj ) = INGLE PULE t2 (THERML REPONE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj T t, Rectangular Pulse uration (sec) PM t Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient

6 Current Regulator ame Type as.u.t. 50KΩ Q G 2V.2µF.3µF V Q G Q G.U.T. V - V G V G 3m Charge Fig 2a. Basic Gate Charge Waveform I G I Current ampling Resistors Fig 2b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low tray Inductance Ground Plane Low Leakage Inductance Current Transformer - - ** V G * R G dv/dt controlled by R G I controlled by uty Factor "".U.T. - evice Under Test - * V * Reverse Polarity for P-Channel ** Use P-Channel river for P-Channel Measurements river Gate rive Period P.W. = P.W. Period [ V G =V] ***.U.T. I Waveform Reverse Recovery Current Re-pplied Voltage Body iode Forward Current di/dt.u.t. V Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I *** V G = 5.0V for Logic Level and 3V rive evices Fig 3. For N-Channel HEXFET

8 Package Outline O-8 Outline imensions are shown in millimeters (inches) 5 E B H 0.25 (.0) M M e 6X e K x 45 θ - C - 0. (.004) L 6 B 8X 8X 0.25 (.0) M C B NOTE:. IMENIONING N TOLERNCING PER NI Y4.5M CONTROLLING IMENION : INCH. 3. IMENION RE HOWN IN MILLIMETER (INCHE). 4. OUTLINE CONFORM TO JEEC OUTLINE M IMENION OE NOT INCLUE MOL PROTRUION MOL PROTRUION NOT TO EXCEE 0.25 (.006). 6 IMENION I THE LENGTH OF LE FOR OLERING TO UBTRTE.. C 8X INCHE MILLIMETER IM MIN MX MIN MX B C E e.050 BIC.27 BIC e.025 BIC BIC H K L θ RECOMMENE FOOTPRINT 6.46 (.255 ).27 (.050 ) 3X 0.72 (.028 ) 8X.78 (.070) 8X Part Marking Information O-8 EXMPLE : THI I N IRF7 INTERNTIONL RECTIFIER LOGO F7 TOP 32 TE COE (YWW) Y = LT IGIT OF THE YER WW = WEEK PRT NUMBER W FER LOT COE (LT 4 IGIT) XXXX BOTTOM

9 Tape & Reel Information O-8 imensions are shown in millimeters (inches) TERMINTION NU MB E R 2.05 (.080).95 (.077) 4. (.6).85 (.072) 3.90 (.54).65 (.065).60 (.062).50 (.059) 0.35 (.03) 0.25 (.0) 5.55 (.28) 5.45 (.25) 5.30 (.208) 5. (.20) 2.30 (.484).70 (.46) FEE IRECTION 8. (.38) 7.90 (.3) 2.60 (.2).50 (.059) 6.50 (.255) 6.30 (.248) 2.20 (.086) 2.00 (.079) 3.20 (.59) 2.80 (.504) 5.40 (.607).90 (.469) (3.000) M X (.969) MIN. NOTE: C ONF ORM TO EI-48-2 INCLUE FLNGE OUTER EGE 3 IMENION HUB 4 C O NT RO L LIN G IM EN IO N : M E TRIC 4.40 (.566) 2.40 (.448) (.724) M X 3 WORL HEQURTER: 233 Kansas t., El egundo, California 90245, Tel: (3) EUROPEN HEQURTER: Hurst Green, Oxted, urrey RH8 9BB, UK Tel: IR CN: 732 Victoria Park ve., uite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: aalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Tel: IR FR ET: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR OUTHET I: 35 Outram Road, #-02 Tan Boon Liat Building, ingapore 036 Tel: ata and specifications subject to change without notice. 8/97

IRF7406 PD C. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.045Ω PRELIMINARY. Description SO-8. Absolute Maximum Ratings

IRF7406 PD C. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.045Ω PRELIMINARY. Description SO-8. Absolute Maximum Ratings l Generation V Technology l Ultra Low OnResistance l PChannel Mosfet l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching escription Fifth Generation HEXFETs from International