AUIRFS4115 AUIRFSL4115

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Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

1 Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE V DSS R DS(on) typ. I D D max. AUIRFS45 AUIRFSL45 HEXFET Power MOSFET D 50V.3m 2.m 99A Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 75 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications S G D 2 Pak AUIRFS45 S G D TO-262 AUIRFSL45 G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFSL45 TO-262 Tube 50 AUIRFSL45 AUIRFS45 D 2 Tube 50 AUIRFS45 -Pak Tape and Reel Left 800 AUIRFS45TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 99 I T C = 0 C Continuous Drain Current, V V 70 A I DM Pulsed Drain Current 396 P C = 25 C Maximum Power Dissipation 375 W Linear Derating Factor 2.5 W/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery 8 V/ns E AS Single Pulse Avalanche Energy (Thermally Limited) 230 mj T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.40 R JA Junction-to-Ambient (PCB Mount), D 2 Pak 40 C/W HEXFET is a registered trademark of Infineon. *Qualification standards can be found at

2 (unless otherwise specified) AUIRFS/SL45 Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 50 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.8 V/ C Reference to 25 C, I D = 3.5mA R DS(on) Static Drain-to-Source On-Resistance.3 2. m V GS = V, I D = 62A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA gfs Forward Trans conductance 97 S V DS = 50V, I D = 62A I DSS Drain-to-Source Leakage Current 20 V DS = 50V, V GS = 0V µa 250 V DS = 50V,V GS = 0V,T J =25 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V na Gate-to-Source Reverse Leakage -0 V GS = -20V R G Internal Gate Resistance 2.3 Dynamic Electrical (unless otherwise specified) Q g Total Gate Charge I D = 62A Q gs Gate-to-Source Charge 28 V DS = 75V nc Q gd Gate-to-Drain Charge 26 V GS = V Q sync Total Gate Charge Sync. (Q g - Q gd ) 5 t d(on) Turn-On Delay Time 8 V DD = 98V t r Rise Time 73 I D = 62A ns t d(off) Turn-Off Delay Time 4 R G = 2.2 t f Fall Time 39 V GS = V C iss Input Capacitance 5270 V GS = 0V C oss Output Capacitance 490 V DS = 50V C rss Reverse Transfer Capacitance 5 pf ƒ =.0MHz, See Fig. 5 C oss eff.(er) Effective Output Capacitance (Energy Related) 460 V GS = 0V, V DS = 0V to 20V C oss eff.(tr) Effective Output Capacitance (Time Related) 530 V GS = 0V, V DS = 0V to 20V Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 99 (Body Diode) showing the A Pulsed Source Current integral reverse I SM 396 (Body Diode) p-n junction diode. V SD Diode Forward Voltage.3 V,I S = 62A,V GS = 0V t rr Reverse Recovery Time 86 V DD = 30V ns I F = 62A, Q rr Reverse Recovery Charge 300 di/dt = 0A/µs nc 450 I RRM Reverse Recovery Current 6.5 A t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L = 0.5mH, R G = 25, I AS = 63A, V GS =V. Part not recommended for use above this value. I SD 62A, di/dt 40A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 400µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS. When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at T J approximately 90 C. R JC value shown is at time zero

3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL VGS TOP 5V V 8.0V 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V 00 0 VGS TOP 5V V 8.0V 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V 5.0V 5.0V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 75 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 00 T 0 J = 75 C Fig. 2 Typical Output Characteristics I D = 62A V GS = V V DS = 50V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss I D = 62A V DS = 20V V DS = 75V V DS = 30V 00 C oss C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

4 V GS(th), Energy (µj) Gate threshold Voltage (V) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL T J = 75 C 00 OPERATION IN THIS AREA LIMITED BY R DS (on) V GS = 0V V SD, Source-to-Drain Voltage (V) 0 DC msec Tc = 25 C Tj = 75 C Single Pulse msec 0µsec 0 00 V DS, Drain-to-Source Voltage (V) 20 Fig. 7 Typical Source-to-Drain Diode Forward Voltage 200 Fig 8. Maximum Safe Operating Area Id = 3.5mA T C, Case Temperature ( C) T J, Temperature ( C ) Fg 9. Maximum Drain Current vs. Case Temperature 6.0 Fig. Drain-to-Source Breakdown Voltage I D = 250µA I D =.0mA I D =.0A V DS, Drain-to-Source Voltage (V) T J, Temperature ( C ) Fig. Typical COSS Stored Energy Fig 2. Maximum Avalanche Energy vs. Drain Current

5 Q RR (nc) Q RR (nc) I RR (A) I RR (A) AUIRFS/SL45 Thermal Response ( Z thjc ) C/W D = R R 2 R R 2 J J 2 2 Ci= i Ri Ci= i Ri C C Ri ( C/W) i (sec) SINGLE PULSE ( THERMAL RESPONSE ) E-006 E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case I F = 42A V R = 30V I F = 62A V R = 30V di F /dt (A/µs) di F /dt (A/µs) Fig. 4 - Typical Recovery Current vs. dif/dt Fig. 5 - Typical Recovery Current vs. dif/dt I F = 42A V R = 30V I F = 62A V R = 30V di F /dt (A/µs) di F /dt (A/µs) Fig. 6 - Typical Stored Charge vs. dif/dt Fig. 7 - Typical Stored Charge vs. dif/dt

6 AUIRFS/SL45 Fig 8. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G D.U.T + I AS - V DD A 20V tp 0.0 Fig 9a. Unclamped Inductive Test Circuit I AS Fig 9b. Unclamped Inductive Waveforms Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms Vds Id Vgs Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 2a. Gate Charge Test Circuit Fig 2b. Gate Charge Waveform

7 AUIRFS/SL45 D 2 Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak (TO-263AB) Part Marking Information Part Number IR Logo AUIRFS45 YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at

8 AUIRFS/SL45 TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number IR Logo AUIRFSL45 YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at

9 AUIRFS/SL45 D 2 Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION TRL.85 (.073).65 (.065).60 (.457).40 (.449) 5.42 (.609) 5.22 (.60) (.957) (.94).90 (.429).70 (.42) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MAX (2.362) MIN. NOTES :. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.039) (.96) (.97) MAX. 4 Note: For the most current drawing please refer to IR website at

10 AUIRFS/SL45 Qualification Information Qualification Level Moisture Sensitivity Level Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q) Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D 2 -Pak MSL TO-262 Class H2 (+/- 4000V) AEC-Q-00 Class C5 (+/- 2000V) AEC-Q-005 Yes Highest passing voltage. Revision History Date Updated datasheet with corporate template /27/205 Corrected ordering table on page. Comments Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 205 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1.

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1. AUTOMOTIVE GRADE Features Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 5 C Operating Temperature Lead-Free,