S S. Top View Bottom View

Size: px
Start display at page:

Download "S S. Top View Bottom View"

Transcription

1 YYWW Product Summary BV SS 3V R S(ON) V GS = V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Engine Management Systems Body Control Electronics C-C Converters S Pin S S 3V 7 C N-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits Rated to +7 C Ideal for High Ambient Temperature Environments % Unclamped Inductive Switching (Test in Production) Ensures More Reliable and Robust End Application Low R S(ON) Ensures On-State Losses are Minimized Excellent Q gd x R S(ON) Product (FOM) Small Form Factor Thermally Efficient Package Enables Higher ensity End Products Occupies just 33% of the Board Area Occupied by SO- Enabling Smaller End Product % UIS (Avalanche) Rated Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and Antimony Free. Green evice (Note 3) Qualified to AEC-Q Standards for High Reliability PPAP Capable (Note4) Mechanical ata Case: PowerI Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 3 per J-ST- Terminal Connections Indicator: See iagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-ST-, Method e3 Weight:.7 grams (Approximate) G G Top View Bottom View 4 Top View Internal Schematic S Equivalent Circuit Ordering Information (Note ) Notes: Part Number Case Packaging -7,/Tape & Reel -3 3,/Tape & Reel. No purposely added lead. Fully EU irective /9/EC (RoHS), /6/EU (RoHS ) & /63/EU (RoHS 3) compliant.. See for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + Cl) and <ppm antimony compounds. 4. Automotive products are AEC-Q qualified and are PPAP capable. Refer to Refer to For packaging details, go to our website at Marking Information YS YS = Product Type Marking Code YYWW = ate Code Marking YY = Last Two igits of Year (ex: = ) WW = Week Code ( to 3) PowerI is a registered trademark of iodes Incorporated. ocument number: S3993 Rev. - of 7 April iodes Incorporated

2 Maximum Ratings A = + C, unless otherwise specified.) Characteristic Symbol Value Unit rain-source Voltage V SS 3 V Gate-Source Voltage V GSS 6 V Continuous rain Current (Notes 7 & ) V GS = V Continuous rain Current (Note 6) V GS = V T C = + C T C = + C T A = + C T A = + C Maximum Continuous Body iode Forward Current (Note 6) I S 3 A Pulsed rain Current (µs Pulse, uty Cycle = %) I M A Pulsed Body iode Forward Current (µs Pulse, uty Cycle = %) I SM A Avalanche Current, L=.3mH I AS 7 A Avalanche Energy, L=.3mH E AS mj I I 7 A A Thermal Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power issipation (Note 7) T C = + C P W Thermal Resistance, Junction to Case (Note 7) R JC 3 C/W Total Power issipation (Note 6) T A = + C P. W Thermal Resistance, Junction to Ambient (Note 6) R JA 6 C/W Operating and Storage Temperature Range T J, T STG - to +7 C Electrical Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note ) rain-source Breakdown Voltage BV SS V V GS = V, I = μa Zero Gate Voltage rain Current I SS - - μa V S = 4V, V GS = V Gate-Source Leakage I GSS - - na V GS = 6V, V S = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) - 3 V V S = V GS, I = μa Static rain-source On-Resistance R S(ON) V GS = V, I = A mω V GS = 4.V, I = 7A iode Forward Voltage V S -.7 V V GS = V, I S = A YNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss V pf S = V, V GS = V, Output Capacitance C oss f = MHz Reverse Transfer Capacitance C rss Gate Resistance R g Ω V S = V, V GS = V, f = MHz Total Gate Charge (V GS = 4.V) Q g - - Total Gate Charge (V GS = V) Q g Gate-Source Charge Q gs nc V S = V, I = A Gate-rain Charge Q gd - - Turn-On elay Time t (ON) Turn-On Rise Time t R V ns = V, V GS = V, Turn-Off elay Time t (OFF) - - R L =.7Ω, R g = 3Ω, I = A Turn-Off Fall Time t F - - Body iode Reverse Recovery Time t RR - - ns Body iode Reverse Recovery Charge Q RR nc I F = A, di/dt = A/μs Notes: 6. R JA is determined with the device mounted on FR-4 substrate PC board, oz copper, with inch square copper plate. R JC is guaranteed by design while R JA is determined by the user s board design. 7. Thermal resistance from junction to soldering point (on the exposed drain pad).. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.. Package limited. ocument number: S3993 Rev. - of 7 April iodes Incorporated

3 R S(ON), RAIN-SOURCE ON-RESISTANCE (W) R S(ON), RAIN-SOURCE ON- RESISTANCE (NORMALIZE) R S(ON), RAIN-SOURCE ON-RESISTANCE (mw) R S(ON), RAIN-SOURCE ON-RESISTANCE (mw) I, RAIN CURRENT (A) I, RAIN CURRENT (A) V GS =.V V GS = 3.V V GS = 4.V V GS = 4.V V GS =.V V GS =3.V 3 V S =.V..... V GS = 3.V V GS =.V V GS =.V V GS =.7V... 3 V S, RAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic T J = T J = T J = T J =7 T J = T J =- 3 4 V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic V GS = 4.V V GS = V I = A I, RAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. rain Current and Gate Voltage V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic...6 V GS = V T J =7 T J = T J =..6.4 V GS = 4.V, I = 7A.4 T J = T J =.. T J =-..6 V GS = V, I = A 3 I, RAIN CURRENT (A) Figure. Typical On-Resistance vs. rain Current and Temperature T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature ocument number: S3993 Rev. - 3 of 7 April iodes Incorporated

4 V GS (V) I, RAIN CURRENT (A) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R S(ON), RAIN-SOURCE ON-RESISTANCE (W) V GS(TH), GATE THRESHOL VOLTAGE (V) V GS = 4.V, I = 7A. I = μa I = ma.4. V GS = V, I = A T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature T J, JUNCTION TEMPERATURE ( ) Figure. Gate Threshold Variation vs. Junction Temperature 3 V GS = V f=mhz C iss C oss T J = T J = T J = T J = T J = 7 T J = V S, SOURCE-RAIN VOLTAGE (V) Figure 9. iode Forward Voltage vs. Current C rss 3 V S, RAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance 9 R S(ON) Limited P W =µs V S = V, I = A 3 3 Qg (nc) Figure. Gate Charge.. P W =ms P W =ms P W =ms T J(Max) = 7 T C = Single Pulse UT on Infinite Heatsink V GS = V P W =ms P W =s.. V S, RAIN-SOURCE VOLTAGE (V) Figure. SOA, Safe Operation Area ocument number: S3993 Rev. - 4 of 7 April iodes Incorporated

5 r(t), TRANSIENT THERMAL RESISTANCE =.7 =. =.3 =.9. =. =.. =. =. =.. =Single Pulse.... t, PULSE URATION TIME (sec) Figure 3. Transient Thermal Resistance R θja (t) = r(t) * R θja R θja = 3 /W uty Cycle, = t / t ocument number: S3993 Rev. - of 7 April iodes Incorporated

6 Package Outline imensions Please see for the latest version. A A3 A Pin # I b(4x) E E z(4x) e b E3 Seating Plane L(4x) E4 L(3x) im Min Max Typ A.7.. A... A3.3 b b E E E E e.6 L L.39 z. All imensions in mm Suggested Pad Layout Please see for the latest version. Y Y Y X3 X X Y4 Y3 imensions Value (in mm) C.6 X.4 X.4 X.3 X3.37 Y.7 Y. Y. Y3 3.7 Y4.4 X C ocument number: S3993 Rev. - 6 of 7 April iodes Incorporated

7 IMPORTANT NOTICE IOES INCORPORATE MAKES NO WARRANTY OF ANY KIN, EXPRESS OR IMPLIE, WITH REGARS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WARRANTIES OF MERCHANTABILITY AN FITNESS FOR A PARTICULAR PURPOSE (AN THEIR EQUIVALENTS UNER THE LAWS OF ANY JURISICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright, iodes Incorporated ocument number: S3993 Rev. - 7 of 7 April iodes Incorporated

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS

More information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state

More information

Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel

Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile

More information

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits

More information

Green. Pin 1 1 S S S G 2. Bottom View

Green. Pin 1 1 S S S G 2. Bottom View YYWW Green 3V N-CHANNEL ENHANCEMENT MOE MOFET PowerI3333- Product ummary BV 3V escription R (ON) Max.7mΩ @ V G = V.mΩ @ V G =.V I Max T C = + C A A This MOFET is designed to minimize the on-state resistance

More information

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A

More information

34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel

34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is

More information

Pin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel

Pin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel YYWW NEW PROUCT Product ummary BV 3V R (ON) max 4.5mΩ @ V G = V 7.mΩ @ V G = 4.5V escription and Applications I max T C = +5 C (Note 9) 5A 5A This MOFET has been designed to minimize the on-state resistance

More information

Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel

Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching

More information

Top View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel

Top View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance

More information

Green. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration

Green. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration Product ummary BV 3V R (ON).mΩ @ V G = V 3.mΩ @ V G = 4.5V escription and Applications I T C = +5 C 5A A This new generation MOFET is designed to minimize R (ON), yet maintain superior switching performance.

More information

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and

More information

Green. Pin1. Part Number Case Packaging DMTH3004LPSQ-13 POWERDI ,500/Tape & Reel

Green. Pin1. Part Number Case Packaging DMTH3004LPSQ-13 POWERDI ,500/Tape & Reel NEW PROUCT AVANCE INFORMATION Product ummary BV 3V R (ON) Max 3.8mΩ @ V G = V 6mΩ @ V G = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOFET is designed to meet the stringent requirements

More information

Green. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel

Green. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel Product ummary BV 6V R (ON) 6mΩ @ V = V 24mΩ @ V = 4.5V escription and Applications I T C = +25 C 37A 29A This MOFET has been designed to meet the stringent requirements of Automotive applications. It

More information

Top View. Part Number Case Packaging DMP6180SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel

Top View. Part Number Case Packaging DMP6180SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel 6V P-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits BV SS -6V R S(ON) Max I T C = +25 C mω @ V = -V -4 4mΩ @ V = -4.5V -2 Low On-Resistance Low Input Capacitance Totally Lead-Free &

More information

Features. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel

Features. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel N-CHANNEL ENHANCEMENT MOE FEL MOSFET Product Summary BV SS R S(ON) Package T A = +25 C 6V Ω @ V S = V escription This new generation uses advanced planar technology MOSFET, provide excellent high voltage

More information

Features. H-Bridge. Top View Pin Configuration. Part Number Case Packaging DMHC6070LSD-13 SO-8 2,500/Tape & Reel

Features. H-Bridge. Top View Pin Configuration. Part Number Case Packaging DMHC6070LSD-13 SO-8 2,500/Tape & Reel NE PROUCT NCE INFORMTION MHC7LS COMPLEMENTRY ENHNCEMENT MOE MOSFET H-BRIGE Product Summary evice (BR)SS R S(ON) Max N-Channel P-Channel - I Max T = 5 C mω @ =. mω @ =.5.7 7mΩ @ = -. 5mΩ @ = -.5. Features

More information

S S. Bottom View. Part Number Case Packaging DMN3020UTS-13 TSSOP-8 2,500/Tape & Reel

S S. Bottom View. Part Number Case Packaging DMN3020UTS-13 TSSOP-8 2,500/Tape & Reel N-CHNNEL ENHNCEMENT MOE MOFET Product ummary BV 3V R (ON) max I max T C = +25 C 2mΩ @ V G = 4.5V 25mΩ @ V G = 2.5V 14 escription and pplications This MOFET is designed to minimize the on-state resistance

More information

I D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel

I D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel DVNCE INFORMTION V COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max I D T = +5 C Q N-Channel V mω @ V = V.5 55mΩ @ V =.5V 5. Q P-Channel -V mω @ V = -V -3.9 3mΩ @ V =

More information

Features. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration

Features. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C 15.5mΩ @ V = 4.5V 7.5 16.5mΩ @ V = 4.V 7.3 19mΩ @ V = 3.1V 6.9 2mΩ @ V

More information

DMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4)

DMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4) YYWW VNE INFORMTION OMPLEMENTRY PIR ENHNEMENT MOE MOSFET PowerI Product Summary evice V (BR)SS R S(ON) Max Q 3V Q -3V escription mω @ V = V 7mΩ @ V = 4.V I Max T = + 8 mω @ V = -V - 38mΩ @ V = -4.V - This

More information

(Notes 6 & 8) Top View

(Notes 6 & 8) Top View NEW PRODUCT 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(ON) Max I D Max () T = +25 C (Notes 6 & 8) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched N

More information

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description

More information

istributed by: www.ameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. 27002T -CHAEL EHACEMET MOE FIEL EFFECT TRASISTOR Features EW PROUCT Low On-Resistance

More information

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)

More information

FDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET

FDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET FC55 P-Channel Power Trench MOSFET -8 V, -. A, 8 mω Features Max r S(on) = 8 mω at V S = - V, I = -. A Max r S(on) = mω at V S = -.5 V, I = -.9 A High performance trench technology for extremely low r

More information

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary

More information

DMP4015SK3. Features and Benefits. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information

DMP4015SK3. Features and Benefits. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information Green MP45SK3 P-HNNEL ENHNEMENT MOE MOSFET Product Summary V (BR)SS -4V escription R S(on) max I T = +25 mω @ V = -V -35 5mΩ @ V = -4.5V -3 This new generation MOSFET has been designed to minimize the

More information

Drain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel

Drain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel BSN2 N-HANNEL ENHANEMENT MODE FIELD MOSFET Product Summary Features and Benefits NEW PRODUT V (BR)DSS 5V Description R DS(ON) I D T A = +25 1.8 @ V = 1V 5mA 2. @ V = 4.5V 45mA This new generation MOSFET

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--

More information

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are

More information

Features. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D

Features. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,

More information

FDG6322C Dual N & P Channel Digital FET

FDG6322C Dual N & P Channel Digital FET FG6C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,

More information

NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL

NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized

More information

FDS V P-Channel PowerTrench MOSFET

FDS V P-Channel PowerTrench MOSFET F685 V P-Channel PowerTrench MOFET Features 8. A, V R (ON) =.7 Ω @ V G = V R (ON) =.35 Ω @ V G =.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and current

More information

FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m

FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination

More information

Features. T A =25 o C unless otherwise noted

Features. T A =25 o C unless otherwise noted NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell

More information

Applications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V

Applications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V FM3N8C N-Channel hielded ate PowerTrench MOFET 8 V, 47 A, 3. mω Features hielded ate MOFET Technology Max r (on) = 3. mω at V = V, I = 56 A Max r (on) = 8. mω at V = 6 V, I = 8 A 5% lower Qrr than other

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single

More information

FDV301N Digital FET, N-Channel

FDV301N Digital FET, N-Channel FVN igital FET, N-Channel General escription This N-Channel logic level enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, MOS technology. This

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering

More information

-10.1A -8.8A. Top View Internal Schematic. Part Number Qualification Case Packaging DMP4015SSS-13 Standard SO-8 2,500/Tape & Reel

-10.1A -8.8A. Top View Internal Schematic. Part Number Qualification Case Packaging DMP4015SSS-13 Standard SO-8 2,500/Tape & Reel NEW PROUCT P-CHNNEL ENHNCEMENT MOE MOFET Product ummary Features and Benefits BV R (ON) Max T = +25 C % Unclamped nductive witch (U) Test in Production Low nput Capacitance -4V mω @ V G = -V 5mΩ @ V G

More information

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

BSS84 P-Channel Enhancement Mode Field-Effect Transistor BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation

More information

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally

More information

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0. FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored

More information

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S

More information

Applications. Bottom S S S. Pin 1 G D D D

Applications. Bottom S S S. Pin 1 G D D D FM8635 N-Channel PowerTrench MOFET 8 V, 3 A,. mω Features Max r (on) =. mω at V = V, I = 5 A Max r (on) = 3. mω at V = 8 V, I = A Advanced Package and ilicon combination for low r (on) and high efficiency

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9

More information

N-Channel 8 V (D-S) MOSFET

N-Channel 8 V (D-S) MOSFET Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According

More information

NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor

NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor March 996 NS8947 ual P-Channel Enhancement Mode Field Effect Transistor General escription Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

More information

NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor

NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor February 996 NS99A ual P-Channel Enhancement Mode Field Effect Transistor General escription Features These P-Channel enhancement mode power field effect -.9A, -V. R S(ON) =.Ω @ V = -V. transistors are

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET Si5435BC P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).45 at V GS = - V - 5.9-3.8 at V GS = - 4.5 V - 4.4 FEATURES Halogen-free According to IEC 649-- Available TrenchFET Power MOSFETs

More information

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

2N7002DW N-Channel Enhancement Mode Field Effect Transistor 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

More information

AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View )

AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View ) UNIVERSAL DC/DC CONVERTER Description Pin Assignments The Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal

More information

N-Channel ENHANCEMENT MODE POWER MOSFET 0V

N-Channel ENHANCEMENT MODE POWER MOSFET 0V PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

74AUP2G34. Pin Assignments. Description ADVANCED INFORMATION. Features. Applications. (Top View) SOT363 X2-DFN X2-DFN X2-DFN1010-6

74AUP2G34. Pin Assignments. Description ADVANCED INFORMATION. Features. Applications. (Top View) SOT363 X2-DFN X2-DFN X2-DFN1010-6 DUAL BUFFERS Description The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The is composed of two buffers with standard

More information

Features A, -25 V. R DS(ON) Symbol Parameter Ratings Units

Features A, -25 V. R DS(ON) Symbol Parameter Ratings Units FG34P igital FET, P-Channel July FG34P General escription This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor s proprietary, high cell density, MOS technology.

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET Si473H P-Channel 30 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 30 SOT-363 SC-70 (6-LEAS) 0.00 at V GS = - 0 V -.7 0.45 at V GS = - 4.5 V -.7 4. nc FEATURES Halogen-free According

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET

More information

Applications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V

Applications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break

Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break FQD3P50TM-F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for

More information

N-Channel 12 V (D-S) MOSFET

N-Channel 12 V (D-S) MOSFET New Product Si44H N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.). at V GS = 4.5 V 4.4 at V GS =.5 V 4.3 at V GS =.8 V 4 SOT-363 SC-7 (6-LEAS) 6 3. nc FEATURES TrenchFET

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3.8 at V GS = V 2.22 at V GS = 4. V 2 6 2. mm PowerPAK SC-7-6L-Single S 4 S 2 3 G 2. mm Bottom View Ordering Information:

More information

NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor NT355L N-Channel Logic Level Enhancement Mode Field Effect Transistor eneral escription Features These logic level N-Channel enhancement mode power field effect transistors are produced using ON emiconductor's

More information

P-Channel 8 V (D-S) MOSFET

P-Channel 8 V (D-S) MOSFET SiA427J P-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).6 at V GS = - 4. V - 2 a - 8 ocument Number: 667 S2-4-Rev. C, 2-May-2.2 at V GS = - 2. V - 2 a.26 at V GS = -.8 V -

More information

Green. TO251 Bottom View. Part Number Case Packaging MBR2045CTI TO Pieces/Tube

Green. TO251 Bottom View. Part Number Case Packaging MBR2045CTI TO Pieces/Tube FMT Green 20 SHTTKY B TF Product Summary (Per Leg) escription This Schottky Barrier ectifier has been designed to meet requirements of onsumer grade pplications. pplications M () Polarity Protection iode

More information

AZ1117C. Description. Features. Applications. Pin Assignments. A Product Line of. Diodes Incorporated LOW DROPOUT LINEAR REGULATOR AZ1117C

AZ1117C. Description. Features. Applications. Pin Assignments. A Product Line of. Diodes Incorporated LOW DROPOUT LINEAR REGULATOR AZ1117C LOW DROPOUT LINEAR REGULATOR Description Features The is a low dropout three-terminal regulator. The has been optimized for low voltage where transient response and minimum input voltage are critical.

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant

More information

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:

More information

Current Sensing MOSFET, N-Channel 30-V (D-S)

Current Sensing MOSFET, N-Channel 30-V (D-S) New Product Si73EY Current Sensing MOSFET, N-Channel 3-V (-S) V S (V) r S(on) ( ) I (A) 3.5 @ V GS = V.7. @ V GS =.5 V. SO- SENSE KELVIN S 3 7 G KELVIN G Top View 5 SENSE N-Channel MOSFET S Parameter Symbol

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol 3V NChannel AlphaMOS General escription Latest Trench Power AlphaMOS (αmos LV) technology Very Low RS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and

More information

Complementary MOSFET Half-Bridge (N- and P-Channel)

Complementary MOSFET Half-Bridge (N- and P-Channel) New Product Si45Y Complementary MOSFET Half-Bridge (N- and P-Channel) V S (V) r S(on) ( ) I (A) N-Channel.3 @ V GS = 4.5 V 7..4 @ V GS =.5 V 6. P-Channel.65 @ V GS = 4.5 V 4.5. @ V GS =.5 V 3.5 S S SO-8

More information

BUK B. N-channel TrenchMOS standard level FET

BUK B. N-channel TrenchMOS standard level FET Rev. 4 24 September 28 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

SMPS MOSFET. V DSS R DS(on) max (mω)

SMPS MOSFET. V DSS R DS(on) max (mω) P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche

More information

Q 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units

Q 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units BSS8DW OMPLEMENTARY PAIR ENHANEMENT MODE FIELD EFFET TRANSISTOR Features Low On-Resistance Low Gate Threshold oltage Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary Pair

More information

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.) NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are

More information

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features

More information

M C C. Revision: A 2017/01/27 MCQ15N10Y SOP-8. Features Halogen free available upon request by adding suffix "-HF"

M C C.  Revision: A 2017/01/27 MCQ15N10Y SOP-8. Features Halogen free available upon request by adding suffix -HF omponents 2736 Marilla Street Chatsworth!"# $%!"# MCQNY Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/ohs Compliant ("P"Suffix designates ohs Compliant. See ordering

More information

BUK A. N-channel TrenchMOS standard level FET

BUK A. N-channel TrenchMOS standard level FET Rev. 2 31 July 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET

More information

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88 NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class

More information

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

Green -14.5A. Pin1. Part Number Compliance Case Packaging DMP4015SPS-13 Standard POWERDI ,500 / Tape & Reel

Green -14.5A. Pin1. Part Number Compliance Case Packaging DMP4015SPS-13 Standard POWERDI ,500 / Tape & Reel reen MP45P 4V P-HNNEL ENHNEMENT MOE MOFET POWERI Product ummary Features and Benefits NEW PROUT V (BR) -4V escription R (on) max I T = +25 mω @ V = -V -7 5mΩ @ V = -4.5V -4.5 This new generation MOFET

More information

BAT54XV2 Schottky Barrier Diode

BAT54XV2 Schottky Barrier Diode June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1

More information

Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG

Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG 3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at 4.V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant

More information

BUK B. N-channel TrenchMOS logic level FET

BUK B. N-channel TrenchMOS logic level FET Rev. 2 6 May 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This

More information

NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m

NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features

More information

P-Channel 2.5 V (G-S) MOSFET

P-Channel 2.5 V (G-S) MOSFET i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition

More information