AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View )

Size: px
Start display at page:

Download "AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View )"

Transcription

1 UNIVERSAL DC/DC CONVERTER Description Pin Assignments The Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal temperature compensated reference, comparator, controlled duty cycle oscillator with an active current limit circuit, driver and high current output switch. This series is specifically designed for incorporating in Step-Down and Step-Up and Voltage- Inverting applications with a minimum number of external components. Emitter Timing Capacitor Gnd SO- ( Top View ) Driver I pk Sense VCC Comparator Inverting Input Features Operation from.0v to 0V Input Low Standby Current Current Limiting Output Current to.a Output Voltage Adjustable Frequency Operation to 00 khz Precision % Reference SO- package Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and Antimony Free. Green Device (Note ) PDIP- and SO- package Totally Lead-Free; RoHS Compliant (Notes & ) Emitter Timing Capacitor Gnd PDIP- ( Top View ) Driver I pk Sense VCC Comparator Inverting Input Notes:. No purposely added lead. Fully EU Directive 00/9/EC (RoHS) & 0//EU (RoHS ) compliant.. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<00ppm total Br Cl) and <000ppm antimony compounds. of

2 Typical Applications Circuit () Step-Up Converter 0uH L 0 S Q Q R Q B0 Ipk Rsc 0. Osc Vin V 0 uf VCC _ Comp..V Ref Reg 0 pf R R 0k k 0uF CO V/00mA.0uH 00 Optional Filter Test Conditions Results Line Regulation V IN = 9V to V, I O = 00mA 0mV = ±0.0% Load Regulation V IN = V, I O = 0mA to 00mA mv = ±0.0% Output Ripple V IN = V, I O = 00mA 00mV PP Efficiency V IN = V, I O = 00mA 0% of

3 Typical Applications Circuit (cont.) () Step-Down Converter SQ Q R Q Ipk Rsc 0. Osc B0 Vin V 0 uf VC C _ Comp..V Ref Reg 0 pf L 00uH R R k k 0uF CO.0V/00mA.0uH 00 Optional Filter Test Conditions Results Line Regulation V IN = V to V, I O = 00mA 0mV = ±0.% Load Regulation V IN = V, I O = 0mA to 00mA mv = ±0.0% Output Ripple V IN = V, I O = 00mA 0mV PP Efficiency V IN = V, I O = 00mA % of

4 Typical Applications Circuit (cont.) () Voltage Inverting Converter S Q Q R Q Rsc 0. Ipk Osc L 00 uh Vin.V to.0v 0uF VC C _ Comp..V Ref Reg 0 pf B0 R R 0k k 0uF -V/00mA.0uH CO 00 Optional Filter Test Conditions Results Line Regulation V IN =.V to.0v, I O = 00mA 0mV = ±0.0% Load Regulation V IN =.0V, I O = 0mA to 00mA 0mV = ±0.% Output Ripple V IN =.0V, I O = 00mA 00mV PP Efficiency V IN =.0V, I O = 00mA 0% of

5 Absolute Maximum Ratings A = C, unless otherwise specified.) Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Notes: Symbol Parameter Value Unit V CC Power Supply Voltage 0 V V IR Comparator Input Voltage Range -0. to 0 V V C(SWITCH) Voltage 0 V V E(SWITCH) Emitter Voltage (V PIN = 0V) 0 V V CE(SWITCH) to Emitter Voltage 0 V V C(DRIVER) Driver Voltage 0 V I C(DRIVER) Driver Current 00 ma I SW Current. A P D Power Dissipation (Note ) SO-: T A = C 00 mw PDIP-: T A = C. W SO- θ JA PDIP- Thermal Resistance SO- 9 θ JC PDIP- C/W T MJ Maximum Junction Temperature (Note ) 0 C T OP Operating Junction Temperature Range 0 to 0 C T stg Storage Temperature Range - to 0 C. Maximum package power dissipation limits must be observed.. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible. Electrical Characteristics (V CC =.0V, unless otherwise specified.) Symbol Parameter Min Typ Max Unit OSCILLATOR f OSC Frequency (V PIN = 0V, C T =.0ηF, T A = C) khz I CHG Charge Current (V CC =.0V to 0V, T A = C) 0 µa I DISCHG Discharge Current (V CC =.0V to 0V, T A = C) µa I DISCHG / I CHG Discharge to Charge Current Ratio (Pin to V CC, T A = C)... V ipk (SENSE) Current Limit Sense Voltage (I CHG = I DISCHG, T A = C) mv OUTPUT SWITCH (Note ) V CE (sat) Saturation Voltage, Darlington Connection (I SW =.0A, Pins, connected).0. V V CE (sat) Saturation Voltage, Darlington Connection (I SW =.0A, I D = 0mA, Forced β 0) V h FE DC Current Gain (I SW =.0A, V CE =.0V, T A = C) 0 I C(off) Off-State Current (V CE = 0V) µa COMPARATOR V th Threshold Voltage V T A = C... T A = 0 C to 0 C..9 Reg LINE Threshold Voltage Line Regulation (V CC =.0V to 0V)..0 mv TOTAL DEVICE I CC Supply Current (V CC =.0V to 0V, C T =.0ηF, Pin = V CC, V PIN > V TH Pin = Gnd, remaining pins open). ma of

6 Representative Schematic Diagram Drive S Q Q Ipk Sense R 00 Q Emitter Ipk Oscillator VCC Comparator Timing Capacitor _.V Reference Regulator Comparator Inverting Input Gnd (Bottom View) of

7 Typical Performance Characteristics Figure. Vce(sat) versus le Figure. Reference Voltage versus Temp. Vce(sat), Saturation Voltage (V).. 0. Reference Voltage (V) Ie, Emitter Current (A) Temperature ( o C) 0 Figure. Current Limit Sense Voltage versus Temperature.0 Figure. Standby Supply Current versus Supply Voltage Current Sense Voltage (mv) Temperature ( o C) Icc, Supply Current (ma) Vcc, Supply Voltage (V) VCE ( sat), (V) Figure. Emitter Follower Configuration Output Saturation Voltage vs. Emitter Current Vcc=~0V Pin,,=Vcc Pin,=GND T A = o C Pin= 0W I E(mA) ton-off, Output On-Off Time(us) Figure.Output On-Off Time versus Oscillator Timing Capacitor V CC =.0V Pin = V CC Pin = GND T A = o C t on t off C T, Oscillator Timing Capacitor (nf) of

8 Design Formula Table Calculation Step-Up Step-Down Voltage-Inverting t ON / t OFF V OUT V F V IN(MIN) V OUT V F I V OUT l V F V IN(MIN) V SAT V IN(MIN) V SAT v OUT V IN(MIN) V SAT ( t ON t OFF ) /f /f /f t ON t OFF t ON t OFF t ON t OFF t OFF t ON t ON t ON t OFF t OFF t OFF t ON ( t ON t OFF ) t OFF ( t ON t OFF ) t OFF ( t ON t OFF ) t OFF C T t ON t ON t ON I PK (switch) I OUT(MAX) (t ON / t OFF ) I OUT(MAX) I OUT(MAX) (t ON / t OFF ) R SC 0. / I PK (SWITCH) 0. / I PK (SWITCH) 0. / I PK (SWITCH) L (MIN) ( V IN(MIN) V SAT ) (V IN(MIN) V SAT V OUT ) ( V IN(MIN) V SAT ) t ON(MAX) ton(max) I PK (SWITCH) I PK (SWITCH) I PK (SWITCH) C O 9 I OUT t ON I PK (SWITCH) (t ON t OFF ) I OUT t ON 9 V RIPPLE (pp) V RIPPLE (pp) V RIPPLE (pp) t ON(MAX) V SAT = Saturation voltage of the output switch. V F = Forward voltage drop of the output rectifier. The following power supply characteristics must be chosen: V IN - Nominal input voltage. V OUT - Desired output voltage, V OUT =. (R/R) I OUT - Desired output current. F MIN - Minimum desired output switching frequency at the selected values of V IN and I O. V RIPPLE(pp) - Desired peak-to-peak output ripple voltage. In practice, the calculated capacitor value will need to be increased due to its equivalent series resistance and board layout. The ripple voltage should be kept to a low value since it will directly affect the line and load regulation. Ordering Information AP 0 XX X - X Package S : SO- N : PDIP- Lead Free L : Lead Free G : Green Packing U : Tube : Tape & Reel Pb Lead-Free Pb Lead-Free Part Number Tube Tape and Reel Package Packaging Code Part Number Quantity Quantity Part Number Suffix Suffix SL- S SO- NA NA 00/Tape & Reel - SG- S SO- NA NA 00/Tape & Reel - NL-U N PDIP- 0 - U NA NA of

9 Marking Information () SO- ( Top View ) Logo Part No. YY WW X X L : Lead Free G : Green Internal code Xth week = 0~ Year : "0" = 00 "09" = 009 ~ () PDIP- ( Top View ) Logo Part No. YY WW X X L : Lead Free Internal code Xth week = 0~ Year : "0" = 00 "09" = 009 ~ 9 of

10 Package Outline Dimensions (All dimensions in mm.) Please see AP000 at for latest version. () SO- e D b E A E A A A h Detail A L 0. ~9 Gauge Plane Seating Plane Detail A SO- Dim Min Max A -. A A.0.0 A b D..9 E.90.0 E..9 e. Typ h - 0. L θ 0 All Dimensions in mm () PDIP- A B K H G D F N C M L J PDIP- Dim Min Max A B.. C.0.0 D F.0. G. typ. H J K.9. L.. M N 0. (min) All Dimensions in mm 0 of

11 Suggested Pad Layout Please see AP000 at for the latest version. () SO- X C C Dimensions Value (in mm) X 0.0 Y. C. C. Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDIION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 0, Diodes Incorporated of

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits

More information

AZ1117C. Description. Features. Applications. Pin Assignments. A Product Line of. Diodes Incorporated LOW DROPOUT LINEAR REGULATOR AZ1117C

AZ1117C. Description. Features. Applications. Pin Assignments. A Product Line of. Diodes Incorporated LOW DROPOUT LINEAR REGULATOR AZ1117C LOW DROPOUT LINEAR REGULATOR Description Features The is a low dropout three-terminal regulator. The has been optimized for low voltage where transient response and minimum input voltage are critical.

More information

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A

More information

74AUP2G34. Pin Assignments. Description ADVANCED INFORMATION. Features. Applications. (Top View) SOT363 X2-DFN X2-DFN X2-DFN1010-6

74AUP2G34. Pin Assignments. Description ADVANCED INFORMATION. Features. Applications. (Top View) SOT363 X2-DFN X2-DFN X2-DFN1010-6 DUAL BUFFERS Description The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The is composed of two buffers with standard

More information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state

More information

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS

More information

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and

More information

DM74LS138 DM74LS139 Decoder/Demultiplexer

DM74LS138 DM74LS139 Decoder/Demultiplexer DM74LS138 DM74LS139 Decoder/Demultiplexer General Description These Schottky-clamped circuits are designed to be used in high-performance memory-decoding or data-routing applications, requiring very short

More information

S S. Top View Bottom View

S S. Top View Bottom View YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain

More information

Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel

Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile

More information

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators MC0A, MC0A, NCV0A. A, StepUp/Down/ Inverting Switching Regulators The MC0A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices consist

More information

Features. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration

Features. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C 15.5mΩ @ V = 4.5V 7.5 16.5mΩ @ V = 4.V 7.3 19mΩ @ V = 3.1V 6.9 2mΩ @ V

More information

Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel

Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching

More information

Switching Regulators MC33063A SOP

Switching Regulators MC33063A SOP MC0A Features Operation from.0 to 0 Input Low Standby Current Current Limiting Output oltage Adjustable Frequency Operation to 00 khz Pb Free Packages are Available Output Current to. A SOP- 0. 0.0-0.0.0

More information

(Notes 6 & 8) Top View

(Notes 6 & 8) Top View NEW PRODUCT 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(ON) Max I D Max () T = +25 C (Notes 6 & 8) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched N

More information

34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel

34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is

More information

Top View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel

Top View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance

More information

Green. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration

Green. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration Product ummary BV 3V R (ON).mΩ @ V G = V 3.mΩ @ V G = 4.5V escription and Applications I T C = +5 C 5A A This new generation MOFET is designed to minimize R (ON), yet maintain superior switching performance.

More information

V N (8) V N (7) V N (6) GND (5)

V N (8) V N (7) V N (6) GND (5) 4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level

More information

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description

More information

Switch Collector. Switch Emitter. Timing Capacitor

Switch Collector. Switch Emitter. Timing Capacitor MC303A, MC3303A, SC303A, SC3303A, NCV3303A. A, Step-Up/Down/ Inverting Switching Regulators The MC303A Series is a monolithic control circuit containing the primary functions required for DC to DC converters.

More information

BAT54XV2 Schottky Barrier Diode

BAT54XV2 Schottky Barrier Diode June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1

More information

I D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel

I D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel DVNCE INFORMTION V COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max I D T = +5 C Q N-Channel V mω @ V = V.5 55mΩ @ V =.5V 5. Q P-Channel -V mω @ V = -V -3.9 3mΩ @ V =

More information

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

BSS84 P-Channel Enhancement Mode Field-Effect Transistor BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation

More information

Green. Pin 1 1 S S S G 2. Bottom View

Green. Pin 1 1 S S S G 2. Bottom View YYWW Green 3V N-CHANNEL ENHANCEMENT MOE MOFET PowerI3333- Product ummary BV 3V escription R (ON) Max.7mΩ @ V G = V.mΩ @ V G =.V I Max T C = + C A A This MOFET is designed to minimize the on-state resistance

More information

Pin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel

Pin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel YYWW NEW PROUCT Product ummary BV 3V R (ON) max 4.5mΩ @ V G = V 7.mΩ @ V G = 4.5V escription and Applications I max T C = +5 C (Note 9) 5A 5A This MOFET has been designed to minimize the on-state resistance

More information

Drain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel

Drain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel BSN2 N-HANNEL ENHANEMENT MODE FIELD MOSFET Product Summary Features and Benefits NEW PRODUT V (BR)DSS 5V Description R DS(ON) I D T A = +25 1.8 @ V = 1V 5mA 2. @ V = 4.5V 45mA This new generation MOSFET

More information

Green. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel

Green. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel Product ummary BV 6V R (ON) 6mΩ @ V = V 24mΩ @ V = 4.5V escription and Applications I T C = +25 C 37A 29A This MOFET has been designed to meet the stringent requirements of Automotive applications. It

More information

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase

More information

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

2N7002DW N-Channel Enhancement Mode Field Effect Transistor 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

More information

ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X

ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X Features General Description 3.5V to 20V DC operation voltage Temperature compensation Wide operating voltage range Open-Collector pre-driver 25mA maximum sinking output current Reverse polarity protection

More information

Top View. Part Number Case Packaging DMP6180SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel

Top View. Part Number Case Packaging DMP6180SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel 6V P-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits BV SS -6V R S(ON) Max I T C = +25 C mω @ V = -V -4 4mΩ @ V = -4.5V -2 Low On-Resistance Low Input Capacitance Totally Lead-Free &

More information

NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit

NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit

More information

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88 NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class

More information

FFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.

FFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description. FFSP66A Silicon Carbide Schottky Diode 6 V, 6 A Features Max Junction Temperature 7 o C Avalanche Rated 36 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse

More information

Features. T A =25 o C unless otherwise noted

Features. T A =25 o C unless otherwise noted NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell

More information

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise

More information

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 4, 4, 41, 42, 44, 46 42 and 46 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling

More information

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5401. PNP Silicon. These are Pb Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage

More information

Features. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel

Features. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel N-CHANNEL ENHANCEMENT MOE FEL MOSFET Product Summary BV SS R S(ON) Package T A = +25 C 6V Ω @ V S = V escription This new generation uses advanced planar technology MOSFET, provide excellent high voltage

More information

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering

More information

FFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.

FFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description. FFSH151A Silicon Carbide Schottky Diode 1 V, 15 A Features Max Junction Temperature 175 C Avalanche Rated 145 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse

More information

ATS276 X - P X - B - X. Lead Free L : Lead Free G : Green

ATS276 X - P X - B - X. Lead Free L : Lead Free G : Green Features General Description On-Chip Hall Sensor with Two Different Sensitivity and Hysteresis Settings for ATS276 3.5V to 2V Operating Voltage 4mA (avg.) Output Sink Current Built-in Protecting Diode

More information

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-

More information

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features

More information

350mW, SMD Switching Diode

350mW, SMD Switching Diode 350mW, SMD Switching Diode FEATURES Designed for mounting on small surface Low Capacitance Low forward voltage drop Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free

More information

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor November 204 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC546, V CEO = 65 V Low-Noise: BC549, BC550 Complement to BC556, BC557,

More information

PN2907 / MMBT2907 PNP General-Purpose Transistor

PN2907 / MMBT2907 PNP General-Purpose Transistor PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.

More information

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol

More information

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both

More information

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.) NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are

More information

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.

More information

S3A - S3N General-Purpose Rectifiers

S3A - S3N General-Purpose Rectifiers S3A - S3N General-Purpose Rectifiers Features Low-Profile Package Glass-Passivated Junction UL Flammability Classification: 94V-0 UL Certified, UL #E258596 SMC/DO-214AB COLOR BAND DENOTES CATHODE ELECTRICAL

More information

Optocoupler, Phototransistor Output, no Base Connection

Optocoupler, Phototransistor Output, no Base Connection Optocoupler, Phototransistor Output, no Base Connection FEATURES A C NC 1 2 3 6 5 4 NC C E Isolation test voltage, 5 V RMS No base terminal connection for improved common mode interface immunity Long term

More information

SDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information

SDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for

More information

Small Gage Pressure Sensor

Small Gage Pressure Sensor Small Gage Pressure Sensor FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 90 millivolt output Constant current or constant voltage drive Ported configuration

More information

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

More information

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.

More information

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS e3 Fast Switching Times Low CTR Degradation

More information

FFSH40120ADN-F155 Silicon Carbide Schottky Diode

FFSH40120ADN-F155 Silicon Carbide Schottky Diode FFSH412ADN-F155 Silicon Carbide Schottky Diode 12 V, 4 A Features Max Junction Temperature 175 o C Avalanche Rated 2 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling

More information

200mA, 30V Schottky Barrier Diode

200mA, 30V Schottky Barrier Diode 200mA, 30V Schottky Barrier Diode FEATURES Designed for mounting on small surface Low capacitance Low forward voltage drop Compliant to RoHS directive 20/65/EU and in accordance to WEEE 2002/96/EC Halogen-free

More information

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

More information

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices.  Features MAXIMUM RATINGS BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage

More information

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are

More information

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*   Features MAXIMUM RATINGS MARKING DIAGRAM , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value

More information

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose

More information

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0. FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored

More information

NE522 High Speed Dual Differential Comparator/Sense Amp

NE522 High Speed Dual Differential Comparator/Sense Amp HighSpeed DualDifferential Comparator/Sense Amp Features 5 ns Maximum Guaranteed Propagation Delay 0 A Maximum Input Bias Current TTL-Compatible Strobes and Outputs Large Common-Mode Input oltage Range

More information

MC1403, B. Low Voltage Reference PRECISION LOW VOLTAGE REFERENCE

MC1403, B. Low Voltage Reference PRECISION LOW VOLTAGE REFERENCE Low Voltage Reference A precision bandgap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to bits in accuracy,

More information

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS MARKING DIAGRAM High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter

More information

Green. Pin1. Part Number Case Packaging DMTH3004LPSQ-13 POWERDI ,500/Tape & Reel

Green. Pin1. Part Number Case Packaging DMTH3004LPSQ-13 POWERDI ,500/Tape & Reel NEW PROUCT AVANCE INFORMATION Product ummary BV 3V R (ON) Max 3.8mΩ @ V G = V 6mΩ @ V G = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOFET is designed to meet the stringent requirements

More information

onlinecomponents.com

onlinecomponents.com MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information

Small, Gauge Pressure Sensor

Small, Gauge Pressure Sensor Small, Gauge Pressure Sensor SM5G-GG Series FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 90 millivolt output Constant current or constant voltage drive Ported

More information

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS 2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation

More information

74AC00, 74ACT00 Quad 2-Input NAND Gate

74AC00, 74ACT00 Quad 2-Input NAND Gate 74AC00, 74ACT00 Quad 2-Input NAND Gate Features I CC reduced by 50% Outputs source/sink 24mA ACT00 has TTL-compatible inputs Ordering Information Order Number Package Number General Description The AC00/ACT00

More information

FFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A

FFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A FFSH65BDN-F85 Silicon Carbide Schottky Diode, 65 V, A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability

More information

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

More information

FGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj

FGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj FGHTSQDNL IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding

More information

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available*   Features MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO

More information

FEATURES FUNCTIONAL BLOCK DIAGRAM

FEATURES FUNCTIONAL BLOCK DIAGRAM TECHNICAL DATA DC-TO-DC CONVETE CONTOL CICUIT IL0A The IL0A is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal temperature

More information

FFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.

FFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description. FFSD8A Silicon Carbide Schottky Diode V, 8 A Features Max Junction Temperature 75 C Avalanche Rated 8 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery

More information

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage

More information

Small Absolute Pressure Sensor

Small Absolute Pressure Sensor Small Absolute Pressure Sensor SM5420E Series FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 95 millivolt span Constant current or constant voltage drive or non-ported

More information

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM 2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140

More information

NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL

NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon

More information

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the

More information

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power

More information

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface

More information

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS TIL TIL-M TIL7-M MOC800-M WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC 5 4 PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MOC800, TIL and

More information

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector

More information

NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj

NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance

More information

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.

More information

NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj

NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance

More information

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector

More information

NTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A

NTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A NTMFDCN PowerPhase, Dual N-Channel SOFL V, High Side A / Low Side 9 A Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power

More information

MOC8111 MOC8112 MOC8113

MOC8111 MOC8112 MOC8113 PACKAGE SCHEMATIC ANODE 6 N/C 6 6 CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER 6 DESCRIPTION The MOC8X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor

More information

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features

More information