I D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel

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1 DVNCE INFORMTION V COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max I D T = +5 C Q N-Channel V V = V.5 V =.5V 5. Q P-Channel -V V = -V -3.9 V = -.5V -3. Description and pplications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to EC-Q, supported by a PPP and is ideal for use in: DC-DC Converters Power Management Functions Backlighting SO- Features and Benefits Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and ntimony Free. Green Device (Note 3) Qualified to EC-Q Standards for High Reliability PPP Capable (Note ) Mechanical Data Case: SO- Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture Sensitivity: Level per J-STD- Terminal Connections: See Diagram Terminals: Finish Tin Finish nnealed over Copper Leadframe. Solderable per MIL-STD-, Method eight:.7 grams (pproximate) D D S D Pin G S D D G G Top View G Top View Pin Configuration D S Q N-Channel MOSFET S Q P-Channel MOSFET Ordering Information (Note 5) Part Number Case Packaging -3 SO-,5/Tape & Reel Notes:. No purposely added lead. Fully EU Directive /95/EC (RoHS) & /5/EU (RoHS ) compliant.. See for more information about Diodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds.. utomotive products are EC-Q qualified and are PPP capable. Refer to 5. For packaging details, go to our website at Marking Information 5 CSD YY 5 CSD YY = Manufacturer s Marking CSD = Product Type Marking Code YY = Date Code Marking YY or YY = Year (ex: = ) = eek ( - 53) Chengdu /T Site of 9 pril

2 DVNCE INFORMTION Maximum Ratings = +5 C, unless otherwise specified.) Characteristic Symbol Q Q Units Drain-Source Voltage V DSS - V Gate-Source Voltage V S ± ± V Continuous Drain Current (Note 7) V = -V Steady T = +5 C I State D T = +7 C. -.5 T t<s = +5 C I D T = +7 C Maximum Body Diode Forward Current (Note 7) I S. -. Pulsed Drain Current (µs Pulse, Duty Cycle = %) I DM -9 valanche Current (Note ) L =.mh I S valanche Energy (Note ) L =.mh E S.7 5. mj Thermal Characteristics (@T = +5 C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note ) T = +5 C. P D T = +7 C. Thermal Resistance, Junction to mbient (Note ) Steady State R t < s θj C/ Total Power Dissipation (Note 7) T = +5 C.5 P D T = +7 C. Thermal Resistance, Junction to mbient (Note 7) Steady State R t<s θj 9 C/ Thermal Resistance, Junction to Case (Note 7) R θjc.7 Operating and Storage Temperature Range T J, T STG -55 to +5 C Electrical Characteristics N-Channel Q (@T = +5 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 9) Drain-Source Breakdown Voltage BV DSS V V = V, I D = 5µ Zero Gate Voltage Drain Current I DSS µ V DS = V, V = V Gate-Source Leakage I S n V = V, V DS = V ON CHRCTERISTICS (Note 9) Gate Threshold Voltage V (TH) 3 V V DS = V, I D = 5µ Static Drain-Source On-Resistance R DS(ON) 33 V = V, I D = mω V =.5V, I D = 5 Diode Forward Voltage V SD.7. V V = V, I S = DYNMIC CHRCTERISTICS (Note ) Input Capacitance C ISS,3 Output Capacitance C OSS 9 pf V DS = 5V, V = V f =.MHz Reverse Transfer Capacitance C RSS Gate Resistance R G.7 Ω V DS = V, V = V, f =.MHz Total Gate Charge (V = V) Q G. Total Gate Charge (V =.5V) Q G 9. Gate-Source Charge Q 3.3 nc V DS = 3V, I D =.3 Gate-Drain Charge Q GD 3. Turn-On Delay Time t D(ON) 3. Turn-On Rise Time t R. Turn-Off Delay Time t D(OFF). Turn-Off Fall Time t F.3 ns V = V, V DD = 3V, R G = Ω, I D =.3 Body Diode Reverse Recovery Time t RR. ns I S =.3, di/dt = /μs Body Diode Reverse Recovery Charge Q RR 7.5 nc I S =.3, di/dt = /μs Notes:. Device mounted on FR- substrate PC board, oz copper, with minimum recommended pad layout. 7. Device mounted on FR- substrate PC board, oz copper, with inch square copper plate.. UIS in production with L =.mh, starting T = +5 C. 9. Short duration pulse test used to minimize self-heating effect.. Guaranteed by design. Not subject to product testing. of 9 pril

3 R DS(ON), DRIN-SOURCE ON-RESISTNCE (NORMLIZED) R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) DVNCE INFORMTION I D, DRIN CURRENT () I D, DRIN CURRENT ().... V = V V = 5.V V =.5V V =.V V = 5.V DS. V = 3.5V.. V = 3.V... V =.V. 3 5 V DS, DRIN-SOURCE VOLTGE (V) Figure Typical Output Characteristics T = 5 C T = 5 C T = 5 C T = 5 C T = -55 C V, GTE-SOURCE VOLTGE (V) Figure Typical Transfer Characteristics V = V T = 5 C.7 T = 5 C. V =.5V. T = 5 C V = V. T = 5 C.3.5. T = -55 C. I D, DRIN-SOURCE CURRENT () Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage.. I D, DRIN CURRENT () Figure Typical On-Resistance vs. Drain Current and Temperature...9 V = V I D =.... V =.5V I D = V =.5V I D = 5.. V = V I D = T J, JUNCTION TEMPERTURE ( C) Figure 5 On-Resistance Variation with Temperature T J, JUNCTION TEMPERTURE ( C) Figure On-Resistance Variation with Temperature 3 of 9 pril

4 I D, DRIN CURRENT () C T, JUNCTION CPCITNCE (pf) V GTE THRESHOLD VOLTGE (V) DVNCE INFORMTION V (th), GTE THRESHOLD VOLTGE (V) I S, SOURCE CURRENT ()....5 I = 5µ D I D = m T J, JUNCTION TEMPERTURE ( C) Figure 7 Gate Threshold Variation vs. mbient Temperature T = 5 C T = 5 C T = 5 C T = 5 C T = -55 C V SD, SOURCE-DRIN VOLTGE (V) Figure Diode Forward Voltage vs. Current f = MHz C iss V DS = 3V I D =.3 C oss C rss V DS, DRIN-SOURCE VOLTGE (V) Figure 9 Typical Junction Capacitance Q g, TOTL GTE CHRGE (nc) Figure Gate Charge RDS(ON) Limited. DC P = s P = s P = ms P = ms P = ms P = µs. T J(max) = 5 C T = 5 C V = V Single Pulse DUT on * MRP Board.. V DS, DRIN-SOURCE VOLTGE (V) Figure SO, Safe Operation rea of 9 pril

5 DVNCE INFORMTION r(t), TRNSIENT THERML RESISTNCE D =.9 D =.7 D =.5 D =.3. D =. D =.5 D =.. D =. D =.5 D = Single Pulse R J(t) = r(t) * R J R J = C/ Duty Cycle, D = t/ t t, PULSE DURTION TIME (sec) Figure Transient Thermal Resistance Electrical Characteristics P-Channel Q (@T = +5 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 9) Drain-Source Breakdown Voltage BV DSS - V V = V, I D = -5µ Zero Gate Voltage Drain Current I DSS - µ V DS = -V, V = V Gate-Source Leakage I S n V = ±V, V DS = V ON CHRCTERISTICS (Note 9) Gate Threshold Voltage V (TH) - -3 V V DS = V, I D = -5µ Static Drain-Source On-Resistance R DS(ON) 9 V = -V, I D = -.5 mω 3 V = -.5V, I D =-3.5 Diode Forward Voltage V SD V V = V, I S = - DYNMIC CHRCTERISTICS (Note ) Input Capacitance C ISS,3 Output Capacitance C OSS 9. pf V DS = -3V, V = V, f =.MHz Reverse Transfer Capacitance C RSS 3.7 Gate Resistance R G 3. Ω V DS = V, V = V, f =.MHz Total Gate Charge (V = -.5V) Q G 9.5 Total Gate Charge (V = -V) Q G 9. Gate-Source Charge Q.3 nc V DS = -3V, I D = -5 Gate-Drain Charge Q GD 3. Turn-On Delay Time t D(ON) 3.7 Turn-On Rise Time t R.3 Turn-Off Delay Time t D(OFF) 5.7 Turn-Off Fall Time t F. ns V = -V, V DS = -3V, R GEN = Ω, I D = -5 Body Diode Reverse Recovery Time t RR.5 ns I S = -5, di/dt = /μs Body Diode Reverse Recovery Charge Q RR. nc I S = -5, di/dt = /μs Notes: 9. Short duration pulse test used to minimize self-heating effect.. Guaranteed by design. Not subject to product testing. 5 of 9 pril

6 R DS(ON), DRIN-SOURCE ON-RESISTNCE (NORMLIZED) R DS(on), DRIN-SOURCE ON-RESISTNCE ( ) R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) DVNCE INFORMTION I D, DRIN CURRENT () I D, DRIN CURRENT ().... V = -5.V V = -V V = -.5V V = -.V V = -3.5V V DS = -5.V.. V = -3.V.. V = -.V V DS, DRIN -SOURCE VOLTGE (V) Figure 3 Typical Output Characteristics T = 5 C T = 5 C T T = 5 C = 5 C T = -55 C V, GTE-SOURCE VOLTGE (V) Figure Typical Transfer Characteristics..... V = -V T = 5 C.. V = -.5V..... T = 5 C T = 5 C T = 5 C.. V = -V. T = -55 C.... -I D, DRIN SOURCE CURRENT () Figure 5 Typical On-Resistance vs. Drain Current and Gate Voltage -I D, DRIN SOURCE CURRENT () Figure Typical On-Resistance vs. Drain Current and Temperature. V = -V I D = V = -. 5V I D = V = -.5V I D = -5.. V = -V I D = T J, JUNCTION TEMPERTURE ( C) Fig. 7 On-Resistance Variation with Temperature T J, JUNCTION TEMPERTURE ( C) Figure On-Resistance Variation with Temperature of 9 pril

7 -I D, DRIN CURRENT () C T, JUNCTION CPCITNCE (pf) -V, GTE-SOURCE VOLTGE (V) DVNCE INFORMTION V (TH), GTE THRESHOLD VOLTGE (V) -I S, SOURCE CURRENT ().. -I = m D.. -I = 5µ D T = 5 C T, MBIENT TEMPERTURE ( C) Figure 9 Gate Threshold Variation vs. mbient Temperature T = 5 C T = 5 C T = 5 C T = -55 C V SD, SOURCE-DRIN VOLTGE (V) Figure Diode Forward Voltage vs. Current f = MHz C oss C iss C rss V DS = -3V I D = V DS, DRIN-SOURCE VOLTGE (V) Figure Typical Junction Capacitance Q g, TOTL GTE CHRGE (nc) Figure Gate-Charge Characteristics RDS(on) Limited.. DC T J(max) = 5 C T = 5 C P = s P = s P = ms P = ms P = ms P = µs V = -V Single Pulse. DUT on * MRP Board. -V DS, DRIN-SOURCE VOLTGE (V) Figure 3 SO, Safe Operation rea 7 of 9 pril

8 DVNCE INFORMTION.5 Package Outline Dimensions Please see for the latest version. SO- e D b E E 3 h Detail 5 L 7 ~9 Gauge Plane Seating Plane Detail SO- Dim Min Max b.3.5 D.5.95 E 5.9. E e.7 Typ h.35 L.. ll Dimensions in mm Suggested Pad Layout Please see for the latest version. X SO- C C Dimensions Value (in mm) X. Y.55 C 5. C.7 Y of 9 pril

9 DVNCE INFORMTION IMPORTNT NOTICE DIODES INCORPORTED MKES NO RRNTY OF NY KIND, EXPRESS OR IMPLIED, ITH REGRDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED RRNTIES OF MERCHNTBILITY ND FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LS OF NY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright, Diodes Incorporated 9 of 9 pril