LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View

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Griselda Goodman
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DSS46U LOW V CE(ST) NPN SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, V CE(ST) Complementary PNP Type vailable (DSS56U) Ultra-Small

UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD-2D Terminals: Finish Matte Tin annealed over Copper Plated lloy 42 leadframe.

6 grams (approximate) C Top View B E Device Schematic Maximum Ratings @T = 25 C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage V CBO 8 V Collector-Emitter Voltage

1 DSS46U LOW V CE(ST) NPN SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, V CE(ST) Complementary PNP Type vailable (DSS56U) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note ) "Green Device" (Note 2) Mechanical Data Case: SOT-323 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD-2D Terminals: Finish Matte Tin annealed over Copper Plated lloy 42 leadframe. Solderable per MIL-STD-22, Method 28 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight:.6 grams (approximate) C Top View B E Device Schematic Maximum = 25 C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage V CBO 8 V Collector-Emitter Voltage V CEO 6 V Emitter-Base Voltage V EBO 5 V Collector Current - Continuous I C Peak Pulse Collector Current I CM 2 Base Current (DC) I B 3 m Peak Base Current I BM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note T = 25 C P D 4 mw Thermal Resistance, Junction to mbient (Note T = 25 C R θj 33 C/W Operating and Storage Temperature Range T J, T STG -55 to +5 C. No purposefully added lead. 2. Diode s Inc. s Green policy can be found on our website at 3. Device mounted on FR-4 PCB with minimum recommended pad layout. DSS46U of 5 March 29

2 DSS46U Electrical = 25 C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS Collector-Base Breakdown Voltage V (BR)CBO 8 V I C = μ, I E = Collector-Emitter Breakdown Voltage (Note 4) V (BR)CEO 6 V I C = m, I B = Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E = μ, I C = Collector Cutoff Current I CBO n V CB = 6V, I E = 5 μ V CB = 6V, I E =, T = 5 C Collector Cutoff Current I CES n V CE = 6V, V BE = Emitter Cutoff Current I EBO n V EB = 5V, I C = ON CHRCTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage h FE V CE(ST) mv V CE = 5V, I C = m V CE = 5V, I C = 5m V CE = 5V, I C = I C = m, I B = m I C = 5m, I B = 5m I C =, I B = m Collector-Emitter Saturation Resistance R CE(ST) 28 mω I C =, I B = m Base-Emitter Saturation Voltage V BE(ST). V I C =, I B = 5m Base-Emitter Turn On Voltage V BE(ON).9 V V CE = 5V, I C = SMLL SIGNL CHRCTERISTICS Output Capacitance C obo pf V CB = V, f =.MHz Current Gain-Bandwidth Product f T 5 MHz V CE = V, I C = 5m, f = MHz SWITCHING CHRCTERISTICS Turn-On Time t on 63 ns Delay Time t d 33 ns Rise Time t r 3 ns Turn-Off Time t off 42 ns Storage Time t s 38 ns Fall Time t f 4 ns V CC = V I C =.5, I B = I B2 = 25m 4. Measured under pulsed conditions. Pulse width = 3μs. Duty cycle 2%. 6 P D, POWER DISSIPTION (mw) R = 33 C/W θj I C, COLLECTOR CURRENT ().. Pw = ms DC Pw = ms Pw = ms T, MBIENT TEMPERTURE ( C) Fig. Power Dissipation vs. mbient Temperature (Note 3).. V CE, COLLECTOR-EMITTER VOLTGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) DSS46U 2 of 5 March 29

3 DSS46U, h FE, DC CURRENT GIN V BE(ON), BSE-EMITTER TURN-ON VOLTGE (V) T = 5 C T = 85 C T = 25 C V = 5V CE,, I C, COLLECTOR CURRENT (m) Fig. 3 Typical DC Current Gain ,, I C, COLLECTOR CURRENT (m) Fig. 5 Typical Base-Emitter Turn-On Voltage 8 V = 5V CE T = 25 C T = 85 C T = 5 C V CE(ST), COLLECTOR-EMITTER STURTION VOLTGE (V) V BE(ST), BSE-EMITTER STURTION VOLTGE (V).. I /I = C B T = 5 C T = 85 C T = 25 C..,, I C, COLLECTOR CURRENT (m) Fig. 4 Typical Collector-Emitter Saturation Voltage I C/IB = T = 25 C T = 85 C T = 5 C.,, I C, COLLECTOR CURRENT (m) Fig. 6 Typical Base-Emitter Saturation Voltage 5 f = MHz CPCITNCE (pf) C ibo 3 C obo. V, REVERSE VOLTGE (V) R Fig. 7 Typical Capacitance Characteristics DSS46U 3 of 5 March 29

4 DSS46U r(t), TRNSIENT THERML RESISTNCE.. D =.7 D =.5 D =.3 D =. D =.5 D =.2 D =. D =.5 D =.9 D = Single Pulse t, PULSE DURTION TIME (s) Fig. 8 Transient Thermal Response (Note 3) P(pk) R θj(t) = r(t) * Rθ J R θj = 3 C/W t t 2 T J - T = P * R θj(t) Duty Cycle, D = t /t2,, Ordering Information (Note 5) Part Number Case Packaging DSS46U-7 SOT-323 3/Tape & Reel 5. For packaging details, go to our website at Marking Information ZN9 YM ZN9 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 28) M = Month (ex: 9 = September) Date Code Key Year Code V W X Y Z B C Month Jan Feb Mar pr May Jun Jul ug Sep Oct Nov Dec Code O N D Package Outline Dimensions K J G H D B C L M SOT-323 Dim Min Max Typ B C D G H J...5 K.9.. L M..8. α 8 - ll Dimensions in mm DSS46U 4 of 5 March 29

5 DSS46U Suggested Pad Layout Z Y X E C Dimensions Value (in mm) Z 2.8 X.7 Y.9 C.9 E. IMPORTNT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS46U 5 of 5 March 29

B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section

B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section 4 COMPLEMENTRY NPN / PNP SURFCE MOUNT TRNSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for utomated ssembly Processes Lead Free