Features. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration

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DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C 15.5mΩ @ V = 4.5V 7.5 16.5mΩ @ V = 4.V 7.3 19mΩ @ V = 3.1V 6.

4 This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management

pplications Power Management Functions Battery Pack Load Switch Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free &

UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2 Terminals: Finish NiPdu over Copper leadframe. Solderable per MIL-STD-22, Method 28 e4 eight:.

1 DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C V = 4.5V 7.5 V = 4.V 7.3 V = 3.1V 6.9 V = 2.5V 6.7 V = 1.8V 5.4 This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. pplications Power Management Functions Battery Pack Load Switch Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and ntimony Free. Green Device (Note 3) Mechanical Data Case: U-DFN23-6 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2 Terminals: Finish NiPdu over Copper leadframe. Solderable per MIL-STD-22, Method 28 e4 eight:.12 grams (approximate) Bottom Drain Contact G1 S1 S1 U-DFN23-6 D1 D2 ESD PROTECTED TO 2kV G1 S1 S1 D1/D2 G2 S2 S2 D1/D2 G1 Gate Protection Diode S1 G2 Gate Protection Diode S2 Bottom View G2 S2 S2 Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN216LHB-7 U-DFN23-6 3, / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 22/95/EC (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information YY = Product Type Marking Code YY = Date Code Marking YY = Last digit of year (ex: 12 for 212) = eek code (1 to 53) DMN216LHB 1 of 6

2 DMN216LHB Maximum Ratings = +25 C, unless otherwise specified.) DVNCE INFORMTION Characteristic Symbol Value Unit Drain-Source Voltage V DSS 2 V Gate-Source Voltage V S ±12 V Continuous Drain Current (Note 6) V = 4.5V Steady T = +25 C 7.5 I State D T = +7 C 5.8 T t < s = +25 C 7.7 I D T = +7 C 6. Pulsed Drain Current (μs pulse, duty cycle = 1% ) I DM 45 Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) T = +25 C 1.2 P D T = +7 C.75 Thermal Resistance, Junction to mbient (Note 5) Steady State 6 R t < s θj C/ Total Power Dissipation (Note 6) T = +25 C 1.65 P D T = +7 C 1 Thermal Resistance, Junction to mbient (Note 6) Steady State 78 R t < s θj 72 C/ Thermal Resistance, Junction to Case R θjc 11.4 Operating and Storage Temperature Range T J, T STG -55 to 15 C Electrical Characteristics (@T = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 7) Drain-Source Breakdown Voltage BV DSS 2 V V = V, I D = 25μ Zero Gate Voltage Drain Current T J = +25 C I DSS 1. μ V DS = 2V, V = V Gate-Source Leakage I S ± μ V = ±8V, V DS = V ON CHRCTERISTICS (Note 7) Gate Threshold Voltage V (th) V V DS = V, I D = 25μ V = 4.5V, I D = V = 4.V, I D = 4. Static Drain-Source On-Resistance R DS(ON) mω V = 3.1V, I D = V = 2.5V, I D = V = 1.8V, I D = 3.5 Forward Transfer dmittance Y fs 25 S V DS = 5V, I D = 6 Diode Forward Voltage V SD V V = V, I S = 1 DYNMIC CHRCTERISTICS (Note 8) Input Capacitance C iss 155 pf V DS = V, V = V, Output Capacitance C oss 166 pf f = 1.MHz Reverse Transfer Capacitance C rss 145 pf Gate Resistance R g 1.37 Ω V DS = V, V = V, f = 1MHz Total Gate Charge (V = 2.5V) Q g 8.4 nc Total Gate Charge (V = 4.5V) Q g 16 nc Gate-Source Charge Q gs 2.3 nc V DS = V, I D = 6 Gate-Drain Charge Q gd 2.5 nc Turn-On Delay Time t D(on) 6.9 ns Turn-On Rise Time t r 15.5 ns V DD = V, R L = 1.7Ω, Turn-Off Delay Time t D(off) 4.9 ns V = 5.V, R G = 3Ω Turn-Off Fall Time t f 12 ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad 7. Repetitive rating, pulse width limited by junction temperature 8. Guaranteed by design. Not subject to product testing DMN216LHB 2 of 6

3 DMN216LHB DVNCE INFORMTION R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) I D, DRIN CURRENT () V = 1.8V V = 2.5V V = 3.V V = 3.5V V = 4.V V = 4.5V V = V V = 1.2V V = 1.5V V DS, DRIN-SOURCE VOLTGE (V) Figure 1 Typical Output Characteristic V = 2.5V V = 4.5V I D, DRIN-SOURCE CURRENT () Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage I D, DRIN CURRENT () R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) V = 5.V DS T = 15 C T = 125 C T = 85 C T = 25 C T = -55 C V, GTE-SOURCE VOLTGE (V) Figure 2 Typical Transfer Characteristics V = 4.5V T = 15 C T = 125 C T = 85 C T = 25 C T = -55 C I D, DRIN CURRENT () Figure 4 Typical On-Resistance vs. Drain Current and Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE (NORMLIZED) V = 3.6V I D = 3 V = 4.5V I D = 5 V = 2.5V I D = T J, JUNCTION TEMPERTURE ( C) Figure 5 On-Resistance Variation with Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) V = 3.6V I D = 3 V = 2.5V I D = 1 V = 4.5V I D = T J, JUNCTION TEMPERTURE ( C) Figure 6 On-Resistance Variation with Temperature DMN216LHB 3 of 6

4 DMN216LHB 1, DVNCE INFORMTION C, JUNCTION CPCITNCE (pf) T 1, f = 1MHz C iss C oss C rss V DS, DRIN-SOURCE VOLTGE (V) Figure 7 Typical Junction Capacitance RDS(on) Limited V GTE THRESHOLD VOLTGE (V) V DS = V I D = Q g, TOTL GTE CHRGE (nc) Figure 8 Gate Charge RDS(on) Limited I D, DRIN CURRENT () 1 DC P = s P = 1s P = ms P = ms P = 1ms P = µs.1 T J(max) = 15 C T = 25 C V = 12V Single Pulse.1 DUT on 1 * MRP Board.1 1 V DS, DRIN-SOURCE VOLTGE (V) Figure 9 SO, Safe Operation rea I D, DRIN CURRENT () 1 DC P = s P = 1s P = ms P = ms P = 1ms.1 T = 15 C P J(max) = µs T = 6 C V = 12V Single Pulse.1 DUT on 1 * MRP Board.1 1 V DS, DRIN-SOURCE VOLTGE (V) Figure SO, Safe Operation rea r(t), TRNSIENT THERML RESISTNCE 1 D =.9 D =.7 D =.5 D =.3.1 D =.1 D =.5 D =.2.1 D =.1 D =.5 R θj(t) = r(t) * Rθ J R θj = C/ D = Single Pulse Duty Cycle, D = t1/ t , t1, PULSE DURTION TIME (sec) Figure 11 Transient Thermal Resistance DMN216LHB 4 of 6

5 DMN216LHB Package Outline Dimensions Please see P22 at for latest version. DVNCE INFORMTION (Pin #1 ID) E Z (4x) 1 D2 D e L b 3 Seating Plane E2 U-DFN23-6 Type B Dim Min Max Typ b D D E E e L Z ll Dimensions in mm Suggested Pad Layout Please see P21 at for the latest version. Y2 G X1 X2 Y Y1 Value Dimensions (in mm) C.65 G.15 X.4 X1 1.6 X2 1.7 Y.53 Y Y2 3.3 C X DMN216LHB 5 of 6

6 DMN216LHB IMPORTNT NOTICE DVNCE INFORMTION DIODES INCORPORTED MKES NO RRNTY OF NY KIND, EXPRESS OR IMPLIED, ITH REGRDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED RRNTIES OF MERCHNTBILITY ND FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LS OF NY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. s used herein:. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 214, Diodes Incorporated DMN216LHB 6 of 6

I D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel

I D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel DVNCE INFORMTION V COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max I D T = +5 C Q N-Channel V mω @ V = V.5 55mΩ @ V =.5V 5. Q P-Channel -V mω @ V = -V -3.9 3mΩ @ V =