DMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4)

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YYWW VNE INFORMTION OMPLEMENTRY PIR ENHNEMENT MOE MOSFET PowerI Product Summary evice V (BR)SS R S(ON) Max Q 3V Q -3V escription mω @ V = V 7mΩ @ V = 4.V I Max T = + 8 mω @ V = -V - 38mΩ @ V = -4.

1 YYWW VNE INFORMTION OMPLEMENTRY PIR ENHNEMENT MOE MOSFET PowerI Product Summary evice V (BR)SS R S(ON) Max Q 3V Q -3V escription V = V V = 4.V I Max T = + 8 V = -V - V = -4.V - This new generation MOSFET is designed to minimize the on-state resistance (R S(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. pplications Power Management Functions nalog Switch PowerI (Type UX) Features Low On-Resistance Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary Pair MOSFET Totally Lead-Free & Fully RoHS ompliant (Notes & ) Halogen and ntimony Free. Green evice (Note 3) Mechanical ata ase: PowerI (Type UX) ase Material: Molded Plastic, Green Molding ompound. UL Flammability lassification Rating 94V- Moisture Sensitivity: Level per J-ST- Terminal onnections Indicator: See iagram Terminals: Finish Matte Tin nnealed over opper Leadframe. Solderable per MIL-ST-, Method 8 Weight:.7 grams (pproximate) Equivalent ircuit Top View Bottom View S G S G PIN G S N-hannel MOSFET G S P-hannel MOSFET Ordering Information (Note 4) Part Number ase Packaging -7 PowerI (Type UX),/Tape & Reel -3 PowerI (Type UX) 3,/Tape & Reel Notes:. No purposely added lead. Fully EU irective /9/E (RoHS) & /6/EU (RoHS ) compliant.. See for more information about iodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + l) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information S 6 S = Product Type Marking ode YYWW = ate ode Marking YY = Last igit of Year (ex: 6 for 6) WW = Week ode ( ~ 3) PowerI is a registered trademark of iodes Incorporated. of July 6

2 VNE INFORMTION Maximum Ratings Q N-hannel (@T = +, unless otherwise specified.) haracteristic Symbol Value Unit rain-source Voltage V SS 3 V Gate-Source Voltage V S ± V ontinuous rain urrent, V = V (Note 7) Steady T = + I State T = +7 7 Maximum Body iode Forward urrent (Note 6) I S Pulsed rain urrent (38μs pulse, uty cycle = %) I M 7 valanche urrent (L =.mh) (Note 8) I S valanche Energy (L =.mh) (Note 8) E S 4 mj Maximum Ratings Q P-hannel (@T = +, unless otherwise specified.) haracteristic Symbol Value Units rain-source Voltage V SS -3 V Gate-Source Voltage V S ± V ontinuous rain urrent, V = -V (Note 7) Steady T = + - I State T = +7 - Maximum Body iode Forward urrent (Note 6) I S - Pulsed rain urrent (38μs Pulse, uty ycle = %) I M -4 valanche urrent (L =.mh) (Note 8) I S - valanche Energy (L =.mh) (Note 8) E S 4 mj Thermal haracteristics (@T = +, unless otherwise specified.) haracteristic Symbol Value Unit Total Power issipation (Note ) P.9 W Thermal Resistance, Junction to mbient (Note ) Steady State 36 R t<s θj 78 /W Total Power issipation (Note 6) P.8 W Thermal Resistance, Junction to mbient (Note 6) Steady State 7 R t<s θj 4 /W Thermal Resistance, Junction to ase (Note 7) R θj Operating and Storage Temperature Range T J, T STG - to + Notes:. evice mounted on FR-4 P board, with minimum recommended pad layout, single sided. 6. evice mounted on FR-4 substrate P board, oz copper, with thermal bias to bottom layer -inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I S and E S rating are based on low frequency and duty cycles to keep T J = +. of July 6

3 VNE INFORMTION Electrical haracteristics Q N-hannel (@T = +, unless otherwise specified.) haracteristic Symbol Min Typ Max Unit Test ondition OFF HRTERISTIS (Note 9) rain-source Breakdown Voltage BV SS 3 V V = V, I = μ Zero Gate Voltage rain urrent T J = + I SS μ V S = 3V, V = V Gate-Source Leakage I S ± n V = ±V, V S = V ON HRTERISTIS (Note 9) Gate Threshold Voltage V (TH).4. V V S = V, I = μ Static rain-source On-Resistance R S(ON) 9. V = V, I = 7 mω 4 7 V = 4.V, I = 7 iode Forward Voltage V S.7. V V = V, I S = YNMI HRTERISTIS (Note ) Input apacitance ISS,84 V pf S = V, V = V, Output apacitance OSS 37 f =.MHz Reverse Transfer apacitance RSS 7 Gate Resistance R G 3. Ω V S = V, V = V, f =.MHz Total Gate harge (V = 4.V) Q G 9. Total Gate harge (V = V) Q G Gate-Source harge Q 3.8 n V S = V, I = Gate-rain harge Q G 4. Turn-On elay Time t (ON) 4. Turn-On Rise Time t R 3.3 V ns = V, V = V, Turn-Off elay Time t (OFF) 4 R L =.Ω, R G = 3Ω Turn-Off Fall Time t F 3.6 Reverse Recovery Time t RR 9.3 ns Reverse Recovery harge Q RR. n I F =, di/dt = /μs Electrical haracteristics Q P-hannel (@T = +, unless otherwise specified.) haracteristic Symbol Min Typ Max Unit Test ondition OFF HRTERISTIS (Note 9) rain-source Breakdown Voltage BV SS -3 V V = V, I = -μ Zero Gate Voltage rain urrent T J = + I SS - μ V S = -3V, V = V Gate-Source Leakage I S ± n V = ±V, V S = V ON HRTERISTIS (Note 9) Gate Threshold Voltage V (TH) V V S = V, I = -μ Static rain-source On-Resistance R S (ON) V = -V, I = -7 mω 3 38 V = -4.V, I = -6. iode Forward Voltage V S V V = V, I S = -. YNMI HRTERISTIS (Note ) Input apacitance ISS,88 V pf S = -V, V = V, Output apacitance OSS 4 f = MHz Reverse Transfer apacitance RSS 6 Gate Resistance R G 9 Ω V S = V, V = V, f = MHz Total Gate harge (V = -4.V) Q G 9. Total Gate harge (V = -V) Q G 9.7 Gate-Source harge Q 3. n V S = -V, I = -7 Gate-rain harge Q G 3. Turn-On elay Time t (ON) 3.7 Turn-On Rise Time t R.6 V ns = -V, V S = -V, Turn-Off elay Time t (OFF) 36 R G = 6Ω, I = -7 Turn-Off Fall Time t F Reverse Recovery Time t RR.4 ns Reverse Recovery harge Q RR 3. n I F = -7, di/dt = /μs Notes: 9. Short duration pulse test used to minimize self-heating effect.. Guaranteed by design. Not subject to product testing. 3 of July 6

4 R S(ON), RIN-SOURE ON-RESISTNE ( ) R S(ON), RIN-SOURE ON-RESISTNE (NORMLIZE) R S(ON), RIN-SOURE ON-RESISTNE ( ) R S(ON), RIN-SOURE ON-RESISTNE ( ) VNE INFORMTION I, RIN URRENT () I, RIN URRENT () Q N-hannel 3 V = V V = 4.V V = 4.V V = 3.V 3 V =.V S V = 3.V V =.V T = T = 8 T = T = T = V S, RIN-SOURE VOLTGE (V) Figure Typical Output haracteristic 3 4 V, GTE-SOURE VOLTGE (V) Figure Typical Transfer haracteristics V = 4.V 8 7 I = 6 8 V = V I, RIN-SOURE URRENT () Figure 3 Typical On-Resistance vs. rain urrent and Gate Voltage.. V = V T = T = T = V, GTE-SOURE VOLTGE (V) Figure 4 Typical rain-source On-Resistance vs. Gate-Source Voltage.8.6. T = T = -.4. V = V I =..8 3 I, RIN URRENT () Figure Typical On-Resistance vs. rain urrent and Temperature.6 V = 4.V I = T J, JUNTION TEMPERTURE ( ) Figure 6 On-Resistance Variation with Temperature 4 of July 6

5 V GTE THRESHOL VOLTGE (V) I, RIN URRENT () I S, SOURE URRENT () T, JUNTION PITNE (pf) VNE INFORMTION R S(ON), RIN-SOURE ON-RESISTNE ( ) V (th), GTE THRESHOL VOLTGE (V) Q N-hannel (ontinued) V = 4.V I = I = m. I = µ. V = V I = T J, JUNTION TEMPERTURE ( ) Figure 7 On-Resistance Variation with Temperature T J, JUNTION TEMPERTURE ( ) Figure 8 Gate Threshold Variation vs. mbient Temperature f=mhz iss T = T = oss T = 8 T = T = - rss V S, SOURE-RIN VOLTGE (V) Figure 9 iode Forward Voltage vs. urrent 8 3 V S, RIN-SOURE VOLTGE (V) Figure Typical Junction apacitance R S(on) Limited P W = µs 6 4 V = V S I = Q, TOTL GTE HRGE (n) g Figure Gate harge. T = J(m ax) T = P = s W P = s W P = ms W P = ms W P = ms W V = V Single Pulse UT on * MRP Board... V S, RIN-SOURE VOLTGE (V) Figure SO, Safe Operation rea of July 6

6 R S(ON), RIN-SOURE ON-RESISTNE ( ) R S(ON), RIN-SOURE ON-RESISTNE (NORMLIZE) R S(ON), RIN-SOURE ON-RESISTNE ( ) R S(ON), RIN-SOURE ON-RESISTNE ( ) VNE INFORMTION I, RIN URRENT () I, RIN URRENT () Q P-hannel 3 V = -V 3 V = -.V S V = -4.V V = -4.V V = -3.V V = -.V V = -.V... 3 V, RIN -SOURE VOLTGE (V) S Figure 3 Typical Output haracteristics 4 T = T = T = 8 T = T = V, GTE-SOURE VOLTGE (V) Figure 4 Typical Transfer haracteristics 3 V = -4.V I = -7 V = -V I, RIN SOURE URRENT () Figure Typical On-Resistance vs. rain urrent and Gate Voltage.4 V = -V T = T = T = 8 T = T = - 3 I, RIN SOURE URRENT () Figure 7 Typical On-Resistance vs. rain urrent and Temperature V, GTE-SOURE VOLTGE (V) Figure 6 Typical rain-source On-Resistance vs. Gate-Source Voltage V = -V I = - V = -4.V I = T J, JUNTION TEMPERTURE ( ) Figure 8 On-Resistance Variation with Temperature 6 of July 6

7 V GTE THRESHOL VOLTGE (V) I, RIN URRENT () I S, SOURE URRENT () T, JUNTION PITNE (pf) VNE INFORMTION R S(on), RIN-SOURE ON-RESISTNE ( ) V (TH), GTE THRESHOL VOLTGE (V) Q P-hannel (ontinued)...4 V = -V I = I = µ. V = -4.V I = - -I = m T J, JUNTION TEMPERTURE ( ) Figure 9 On-Resistance Variation with Temperature T, MBIENT TEMPERTURE ( ) Figure Gate Threshold Variation vs. mbient Temperature f=mhz iss T = oss T = T = 8 T = T = - rss V S, SOURE-RIN VOLTGE (V) Figure iode Forward Voltage vs. urrent 8 3 V S, RIN-SOURE VOLTGE (V) Figure Typical Junction apacitance R S(on) Limited P = µs W 6 4 V = -V S I = Q g, TOTL GTE HRGE (n) Figure 3 Gate harge. T = J(m ax) T = P = s W P = s W P = ms W P = ms W P = ms W V = -V Single Pulse UT on * MRP Board... V, RIN-SOURE VOLTGE (V) S Figure 4 SO, Safe Operation rea 7 of July 6

8 VNE INFORMTION r(t), TRNSIENT THERML RESISTNE =.9 =.7 =. =.3. =. =. =.. =. =. = Single Pulse R (t) = r(t) * R J J R = 36 /W J uty ycle, = t/ t t, PULSE URTION TIME (sec) Figure Transient Thermal Resistance 8 of July 6

9 VNE INFORMTION Package Outline imensions Please see for the latest version. PowerI (Type UX) E3 E k b e k L L E E E4 a c PowerI (Type UX) im Min Max Typ b..4.3 c E E E.6..8 E E4..3. e.6 L.3..4 k..9.7 k a ll imensions in mm Suggested Pad Layout Please see for the latest version. X3 X PowerI (Type UX) Y3 Y G X G Y Y imensions Value (in mm).6 G.3 G.6 X.4 X. X.37 X3.63 Y.6 Y.9 Y.4 Y3 3.6 X 9 of July 6

10 VNE INFORMTION IMPORTNT NOTIE IOES INORPORTE MKES NO WRRNTY OF NY KIN, EXPRESS OR IMPLIE, WITH REGRS TO THIS OUMENT, INLUING, BUT NOT LIMITE TO, THE IMPLIE WRRNTIES OF MERHNTBILITY N FITNESS FOR PRTIULR PURPOSE (N THEIR EQUIVLENTS UNER THE LWS OF NY JURISITION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should ustomers purchase or use iodes Incorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief Executive Officer of iodes Incorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, ustomers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. opyright 6, iodes Incorporated of July 6

DMP4015SK3. Features and Benefits. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information

DMP4015SK3. Features and Benefits. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information Green MP45SK3 P-HNNEL ENHNEMENT MOE MOSFET Product Summary V (BR)SS -4V escription R S(on) max I T = +25 mω @ V = -V -35 5mΩ @ V = -4.5V -3 This new generation MOSFET has been designed to minimize the