NTMFS4119NT3G. Power MOSFET. 30 V, 30 A, Single N Channel, SO 8 Flat Lead
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1 Power MOFET V,, ingle N Channel, O 8 Flat Lead Features Low R (on) Fast witching Times Low Inductance O 8 Package These are Pb Free evices V (BR) R (on) Typ I Max (Note ) pplications Notebooks, raphics Cards Low ide witch C C V. V. V MXIMUM RTIN ( unless otherwise noted) Parameter ymbol Value Unit rain to ource Voltage V V ate to ource Voltage V V Continuous rain Current teady T = C I 8 (Note ) tate T = 8 C Power issipation (Note ) Continuous rain Current (Note ) t s T = C teady P. W tate T = C t s 6. T = C I teady T tate = 8 C 8. Power issipation (Note ) T = C P.9 W Pulsed rain Current t p = s I M 89 Operating Junction and torage Temperature T J, T stg to C ource Current (Body iode) I 8. ingle Pulse rain to ource valanche Energy (V = V, V = V, I PK = 9, L = mh, R = ) Lead Temperature for oldering Purposes (/8 from case for s) THERML REITNCE MXIMUM RTIN E mj T L 6 C Parameter ymbol Value Unit Junction to Case teady tate R JC. C/W Junction to mbient teady tate (Note ) R J.7 Junction to mbient t s (Note ) R J. Junction to mbient teady tate (Note ) R J 8. tresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. urface mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces).. urface mounted on FR board using the minimum recommended pad size (Cu area =. in sq). O 8 FLT LE CE 88 TYLE 9N Y WW ZZ ORERIN INFORMTION evice Package hipping NTMF9NT NTMF9NT O 8 FL (Pb Free) O 8 FL (Pb Free) MRKIN IRM 9N YWZZ = pecific evice Code = ssembly Location = Year = Work Week = Lot Traceability / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging pecification Brochure, BR8/. emiconductor Components Industries, LLC, May, Rev. 6 Publication Order Number: NTMF9N/
2 ELECTRICL CHRCTERITIC ( unless otherwise noted) Characteristic ymbol Test Condition Min Typ Max Unit OFF CHRCTERITIC rain to ource Breakdown Voltage V (BR) V = V, I = V rain to ource Breakdown Voltage Temperature Coefficient Zero ate Voltage rain Current I V = V, V = V V (BR) /T J 9 mv/ C. T J = C ate to ource Leakage Current I V = V, V = V n ON CHRCTERITIC (Note ) ate Threshold Voltage V (TH) V = V, I =.. V Negative Threshold Temperature Coefficient V (TH) /T J 7. mv/ C rain to ource On Resistance R (on) V = V, I = 9.. m V =. V, I =..8 Forward Transconductance g F V = V, I = Input Capacitance C I CHRE, CPCITNCE N TE REITNCE 8 pf Output Capacitance C O V = V, f =. MHz, V = V 8 Reverse Transfer Capacitance C R Total ate Charge Q (TOT) nc Threshold ate Charge Q (TH) 7. V =. V, V = V, I = 8 ate to ource Charge Q ate to rain Charge Q 7. ate Resistance R.7 WITCHIN CHRCTERITIC, V =. V (Note ) Turn On elay Time t d(on) Rise Time t r V =. V, V = V, 6 Turn Off elay Time t d(off) I =., R =. Fall Time t f RIN OURCE IOE CHRCTERITIC Forward iode Voltage V V = V, I = 8. 8 ns.7. V T J = C.6 Reverse Recovery Time t RR 6. ns Charge Time t a V = V, di /dt = / s, 9. ischarge Time t b I = Reverse Recovery Charge Q RR 7 nc. Pulse Test: Pulse Width s, uty Cycle %.. witching characteristics are independent of operating junction temperatures.
3 TYPICL PERFORMNCE CURVE I, RIN CURRENT (MP) V V V 6 V =.8 V to V. V 6. V. V T J = C.8 V.6 V V, RIN TO OURCE VOLTE (VOLT) I, RIN CURRENT (MP) T J = C V, TE TO OURCE VOLTE (VOLT) Figure. On Region Characteristics Figure. Transfer Characteristics R (on), RIN TO OURCE REITNCE ( ) I = V, TE TO OURCE VOLTE (VOLT) I, RIN CURRENT (MP) Figure. On Resistance vs. ate to ource Voltage R (on), RIN TO OURCE REITNCE ( )..... V =. V V = V Figure. On Resistance vs. rain Current and ate Voltage R (on), RIN TO OURCE REITNCE (NORMLIZE) I = 9 V = V I, LEKE (n) V = V T J = C T J = C T J, JUNCTION TEMPERTURE ( C) V, RIN TO OURCE VOLTE (VOLT) Figure. On Resistance Variation with Temperature Figure 6. rain to ource Leakage Current vs. Voltage
4 TYPICL PERFORMNCE CURVE C, CPCITNCE (pf) C iss C oss 7 C rss TE TO OURCE OR RIN TO OURCE VOLTE (VOLT) Figure 7. Capacitance Variation V = V V, TE-TO-OURCE VOLTE (VOLT) V Q QT Q V I = 8 Q, TOTL TE CHRE (nc) Figure 8. ate To ource and rain To ource Voltage vs. Total Charge 6 8 V, RIN-TO-OURCE VOLTE (VOLT) t, TIME (ns) V = V I = V =. V t f t d(off) t d(on) t r I, OURCE CURRENT (MP) 8 6 V = V R, TE REITNCE (OHM) V, OURCE TO RIN VOLTE (VOLT).9 Figure 9. Resistive witching Time Variation vs. ate Resistance Figure. iode Forward Voltage vs. Current
5 PCKE IMENION. C. C 8X b. C B. c L X TOP VIEW IE VIEW e/. C B X E E ETIL. C c FN x6,.7p (O 8FL) CE 88 IUE X e ETIL X C ETIN PLNE OLERIN FOOTPRINT* X.7 X.7 X. NOTE:. IMENIONIN N TOLERNCIN PER ME Y.M, 99.. CONTROLLIN IMENION: MILLIMETER.. IMENION N E O NOT INCLUE MOL FLH PROTRUION OR TE BURR. MILLIMETER IM MIN NOM.9.. b.. c..8. BC..9. E 6. BC E..8 E. e.7 BC..6 K.. L..6 L..7 M.. TYLE : PIN. OURCE. OURCE. OURCE. TE. RIN MX PIN (EXPOE P) E K L M.96. X.9. X.9..7 BOTTOM VIEW X..6 *For additional information on our Pb Free strategy and soldering details, please download the ON emiconductor oldering and Mounting Techniques Reference Manual, OLERRM/. ON emiconductor and are registered trademarks of emiconductor Components Industries, LLC (CILLC). CILLC reserves the right to make changes without further notice to any products herein. CILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in CILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. CILLC does not convey any license under its patent rights nor the rights of others. CILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the CILLC product could create a situation where personal injury or death may occur. hould Buyer purchase or use CILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold CILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that CILLC was negligent regarding the design or manufacture of the part. CILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORERIN INFORMTION LITERTURE FULFILLMENT: Literature istribution Center for ON emiconductor P.O. Box 6, enver, Colorado 87 U Phone: 67 7 or 8 86 Toll Free U/Canada Fax: or Toll Free U/Canada orderlit@onsemi.com N. merican Technical upport: Toll Free U/Canada Europe, Middle East and frica Technical upport: Phone: 79 9 Japan Customer Focus Center Phone: 8 87 ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative NTMF9N/
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NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj
NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance
NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj
NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance
NGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj
NGTGNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS
, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.
P-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
NLSV2T Bit Dual-Supply Inverting Level Translator
2-Bit Dual-Supply Inverting Level Translator The NLSV2T240 is a 2 bit configurable dual supply voltage level translator. The input A n and output B n ports are designed to track two different power supply
NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual
NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.
NL17SZ08. Single 2-Input AND Gate
N7SZ08 Single 2-Input AND Gate The N7SZ08 is a single 2 input AND Gate in two tiny footprint packages. The device performs much as CX multi gate products in speed and drive. They should be used wherever
MBRS140T3G SBRS8140T3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS
MBRSTG, SBRS8TG Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
NL17SV16. Ultra-Low Voltage Buffer
N7S6 Ultra-ow oltage Buffer The N7S6X5T is an ultra high performance single Buffer fabricated in sub micron silicon gate 0.35 m technology with excellent performance down to 0.9. This device is ideal for
2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general
NL17SZ16. Single Input Buffer
NL7SZ6 Single Input Buffer The NL7SZ6 is a single input Buffer in two tiny footprint packages. The device performs much as LCX multi gate products in speed and drive. Features Tiny SOT 33 and SOT 3 Packages
NTP45N06L, NTB45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel TO 220 and D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m
NTP5N6L, NTB5N6L Power MOSFET 5 Amps, 6 Volts Logic Level, NChannel TO and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge
NTB25P06, NVB25P06. Power MOSFET. 60 V, 27.5 A, P Channel D 2 PAK
NTB25P6, NB25P6 Power OSFET 6, 27.5 A, PChannel D 2 PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features AEC Q Qualified
2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector
S S. Bottom View. Part Number Case Packaging DMN3020UTS-13 TSSOP-8 2,500/Tape & Reel
N-CHNNEL ENHNCEMENT MOE MOFET Product ummary BV 3V R (ON) max I max T C = +25 C 2mΩ @ V G = 4.5V 25mΩ @ V G = 2.5V 14 escription and pplications This MOFET is designed to minimize the on-state resistance
NTMD6P02R2SG. Power MOSFET 6 Amps, 20 Volts. P Channel SOIC 8, Dual Features 6 AMPERES, 20 VOLTS
NTMD6P2R2 Preferred Device Power MOSFET 6 mps, 2 Volts PChannel SOIC, Dual Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC Surface Mount
BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter
NGTB30N65IHL2WG IGBT. 30 A, 650 V V CEsat = 1.6 V E off = 0.2 mj
NGTB3N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications,
NE522 High Speed Dual Differential Comparator/Sense Amp
HighSpeed DualDifferential Comparator/Sense Amp Features 5 ns Maximum Guaranteed Propagation Delay 0 A Maximum Input Bias Current TTL-Compatible Strobes and Outputs Large Common-Mode Input oltage Range
SN74LS175MEL. Quad D Flip Flop LOW POWER SCHOTTKY
uad Flip Flop The LSTTL/MSI SN74LS75 is a high speed uad Flip-Flop. The device is useful for general flip-flop requirements where clock and clear inputs are common. The information on the inputs is stored
BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO
2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140
FFSH40120ADN-F155 Silicon Carbide Schottky Diode
FFSH412ADN-F155 Silicon Carbide Schottky Diode 12 V, 4 A Features Max Junction Temperature 175 o C Avalanche Rated 2 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling
BC846ALT1 Series. General Purpose Transistors. NPN Silicon
BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector
PN2907 / MMBT2907 PNP General-Purpose Transistor
PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.
NGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj
NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value
34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is
RS1A - RS1M Fast Rectifiers
RSA - RSM Fast Rectifiers Features Glass-Passivated Junction For Surface Mounted Applications uilt-in Strain Relief, Ideal for Automated Placement UL Certified: Certificate # E326243 SMA/DO-24AC COLOR
FGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj
FGHTSQDNL IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding
2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base
N-Channel 30-V (D-S) MOSFET
i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation