MBRS140T3G SBRS8140T3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS
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1 MBRSTG, SBRS8TG Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features Small Compact Surface Mountable Package with J Bend Leads Rectangular Package for utomated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0. V T J = C) Excellent bility to Withstand Reverse valanche Energy Transients Guardring for Stress Protection ESD Ratings: Human Body Model = B (> 6000 V) Machine Model = C (> 0 V) SBRS8 Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable ll Packages are Pb Free* Mechanical Characteristics Case: Epoxy, Molded Weight: 9 mg (approximately) Finish: ll External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 60 C Max. for Seconds Cathode Polarity Band SCHOTTKY BRRIER RECTIFIER.0 MPERE, VOLTS CSE MRKING DIGRM B Y WW = Device Code = ssembly Location = Year = Work Week = Pb Free Package ORDERING INFORMTION Device Package Shipping MBRSTG (Note: Microdot may be in either location) SBRS8TG YWW B (Pb Free) (Pb Free),00 / Tape & Reel,00 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 0 pril, 0 Rev. 9 Publication Order Number: MBRST/D
2 MBRSTG, SBRS8TG MXIMUM RTINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R V verage Rectified Forward Current T L = C Non Repetitive Peak Surge Current (Surge pplied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) I F(V).0 I FSM Operating Junction Temperature T J 6 to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERML CHRCTERISTICS Characteristic Symbol Value Unit Thermal Resistance Junction to Lead (T L = C) R JL C/W ELECTRICL CHRCTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note ) (i F =.0, T J = C) Maximum Instantaneous Reverse Current (Note ) (Rated dc Voltage, T J = C) (Rated dc Voltage, T J = 0 C). Pulse Test: Pulse Width = 00 s, Duty Cycle.0%. V F 0.6 i R.0 V m if, INSTNTNEOUS FORWRD CURRENT (MPS) T C = C T C = 0 C 0. T C = C T C = - C T C = - C V F, INSTNTNEOUS FORWRD VOLTGE (VOLTS) Figure. Typical Forward Voltage if, INSTNTNEOUS FORWRD CURRENT (MPS) T C = C T C = 0 C 0. T C = C T C = - C T C = - C V F, MXIMUM INSTNTNEOUS FORWRD VOLTGE (VOLTS) Figure. Maximum Forward Voltage
3 MBRSTG, SBRS8TG I R, REVERSE CURRENT (m) T J = C 0 C 7 C C C, CPCITNCE (pf) NOTE: TYPICL CPCITNCE T 0 V = 60 pf V R, REVERSE VOLTGE (VOLTS) Figure. Typical Reverse Current V R, REVERSE VOLTGE (VOLTS) Figure. Typical Capacitance 6 I F(V), VERGE FORWRD CURRENT (MPS) SQURE WVE RTED VOLTGE PPLIED R JC = C/W T J = C T C, CSE TEMPERTURE ( C) DC Figure. Current Derating (Case) PF(V), VERGE POWER DISSIPTION (WTTS) T J = C CPCITNCE LOD I PK = 0 I V 0 0 SQURE WVE π DC I F(V), VERGE FORWRD CURRENT (MPS) Figure 6. Power Dissipation
4 MBRSTG, SBRS8TG PCKGE DIMENSIONS CSE 0 ISSUE H H E E b POLRITY INDICTOR OPTIONL S NEEDED D NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. D DIMENSION SHLL BE MESURED WITHIN DIMENSION P. MILLIMETERS INCHES DIM MIN NOM MX MIN NOM MX b c D E H E L L 0. REF 0.00 REF L L c SOLDERING FOOTPRINT* SCLE 8: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 807 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MBRST/D
5 Mouser Electronics uthorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: MBRST
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BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter
NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140
BC846ALT1 Series. General Purpose Transistors. NPN Silicon
BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages
BSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
NL17SZ08. Single 2-Input AND Gate
N7SZ08 Single 2-Input AND Gate The N7SZ08 is a single 2 input AND Gate in two tiny footprint packages. The device performs much as CX multi gate products in speed and drive. They should be used wherever
MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,
FST Bit Bus Switch
FST32 4-Bit Bus Switch The ON Semiconductor FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and adds
MC100LVE VНECL 16:1 Multiplexer
3.3VНECL 16:1 Multiplexer The is a 16:1 multiplexer with a differential output. The select inputs (SEL0, 1, 2, 3 ) control which one of the sixteen data inputs (A0 A15) is propragated to the output. The
NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit
NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit
2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector
2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS
2N4918-2N492 Series Medium-Power Plastic PNP Silicon Transistors These mediumpower, highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low
NB3L553/D. 2.5 V / 3.3 V / 5.0 V 1:4 Clock Fanout Buffer
2.5 V / 3.3 V / 5.0 V :4 Clock Fanout Buffer Description The is a low skew to 4 clock fanout buffer, designed for clock distribution in mind. The specifically guarantees low output to output skew. Optimal
NTGS3446. Power MOSFET 20 V, 5.1 A Single N Channel, TSOP6 Features
Power MOSFET V,. Single NChannel, TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery valanche Energy Specified SS
FFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.
FFSP66A Silicon Carbide Schottky Diode 6 V, 6 A Features Max Junction Temperature 7 o C Avalanche Rated 36 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
NCS1002A. Constant Voltage / Constant Current Secondary Side Controller
NCS00A Constant Voltage / Constant Current Secondary Side Controller Description The NCS00A is a performance upgrade from the NCS00 focused on reducing power consumption in applications that require more
2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base
NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
MC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger
MC74AC32, MC74ACT32 Quad 2 Input NAND Schmitt Trigger The MC74AC/74ACT32 contains four 2 input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter free
SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY
of 0 Decoder/Driver Open Collector The SN74LS45, -of-0 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 0-digit incandescent displays. All outputs remain off for
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.oemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba
LM4040, LM4041. Precision Micro-Power Shunt Voltage References
LM44, LM441 Precision Micro-Power Shunt Voltage References Description LM44 and LM441 are precision two terminal shunt mode voltage references offered in factory programmed reverse breakdown voltages of
PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value
NGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj
NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
PN2907 / MMBT2907 PNP General-Purpose Transistor
PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.