MBRB2545CTG, SBRB2545CTG. SWITCHMODE Power Rectifier. D 2 PAK Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
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1 BRB255CTG, SBRB255CTG SWITCHODE Power Rectifier D 2 PK Surface ount Power Package The D 2 PK Power Rectifier is a stateoftheart device that employs the Schottky Barrier principle with a platinum barrier metal. eatures CenterTap Configuration Guardring for Stress Protection ow orward Voltage 175 C Operating Junction Temperature Epoxy eets U in Short Heat Sink Tab anufactured Not Sheared Similar in Size to the Industry Standard TO2 Package ECQ1 Qualified and PPP Capable SBRB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements ll Packages are Pbree* echanical Characteristics Case: Epoxy, olded, Epoxy eets U 9 V0 Weight: 1.7 Grams (pproximately) inish: ll External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead and ounting Surface Temperature for Soldering Purposes: 260 C ax. for Seconds Device eets S1 Requirements ESD Ratings: achine odel = C (> 00 V) Human Body odel = 3B (> 8000 V) SCHOTTKY BRRIER RECTIIER 30 PERES, 5 VOTS 1 3 Y WW B255 G K D 2 PK CSE 18B STYE 3 RKING DIGR Y WW B255G K = ssembly ocation = Year = Work Week = Device Code = Pbree Package = Diode Polarity ORDERING INORTION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *or additional information on our Pbree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SODERR/D. Semiconductor Components Industries, C, 13 November, 13 Rev Publication Order Number: BRB255CT/D
2 BRB255CTG, SBRB255CTG XIU RTINGS (Per eg) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage verage Rectified orward Current (Rated V R, T C = 16 C) Total Device Peak Repetitive orward Current (Rated V R, Square Wave, khz, T C = 160 C) NonRepetitive Peak Surge Current (Surge pplied at Rated oad Conditions Halfwave, Single Phase, 60 Hz) Rating Symbol Value Unit V RR 5 V V RW V R I (V) I R 30 I S 150 Peak Repetitive Reverse Surge Current (2.0 s, 1.0 khz) I RR 1.0 Storage Temperature Range T stg 65 to +175 C Operating Junction Temperature (Note 1) T J 65 to +175 C Voltage Rate of Change (Rated V R ) dv/dt,000 V/ s Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. unctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junctiontombient: dp D /dt J < 1/R J. THER CHRCTERISTICS (Per eg) Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase Junctiontombient (Note 2) R JC R J C/W 2. When mounted using minimum recommended pad size on R board. EECTRIC CHRCTERISTICS (Per Diode) Symbol Characteristic Condition in Typ ax Unit V Instantaneous orward Voltage (Note 3) I = 15 mp, T J = 25 C I = 15 mp, T J = 125 C I = 30 mp, T J = 25 C I = 30 mp, T J = 125 C V I R Instantaneous Reverse Current (Note 3) V R = 5 Volts, T J = 25 C V R = 5 Volts, T J = 125 C m 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ORDERING INORTION BRB255CTG SBRB255CTG BRB255CTTG Device Package Shipping D 2 PK (Pbree) D 2 PK (Pbree) D 2 PK (Pbree) 50 Units / Rail 50 Units / Rail 800 Units / Tape & Reel SBRB255CTTG D 2 PK (Pbree) 800 Units / Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2
3 I BRB255CTG, SBRB255CTG I, INSTNTNEOUS ORWRD CURRENT (PS) T J = 150 C C T J = 125 C C C C 25 C C , REVERSE CURRENT (m) V, INSTNTNEOUS ORWRD VOTGE (VOTS) V R, REVERSE VOTGE (VOTS) R 0 0, VERGE ORWRD POWER DISSIPTION (WTTS) P(V) igure 1. Typical orward Voltage, Per eg T J = 125 C 5 (CPCITIVE ODS) I PK = I V (RESISTIVE OD) SQURE WVE I, VERGE ORWRD CURRENT (PS) I PK I V = igure 3. Typical orward Power Dissipation DC I (V), VERGE ORWRD CURRENT () igure 2. Typical Reverse Current, Per eg 26 2 DC SQURE T C, CSE TEPERTURE ( C) igure. Current Derating, Case per eg 3
4 BRB255CTG, SBRB255CTG PCKGE DIENSIONS D 2 PK 3 CSE 18B0 ISSUE K T SETING PNE 1 B G 2 3 VRIBE CONIGURTION ZONE S D 3 P 0.13 (0.005) T R B K C H N E V W W J U P NOTES: 1. DIENSIONING ND TOERNCING PER NSI Y1.5, CONTROING DIENSION: INCH B01 THRU 18B03 OBSOETE, NEW STNDRD 18B0. INCHES IIETERS DI IN X IN X B C D E G 0.0 BSC 2.5 BSC H J K N RE 5.00 RE P RE 2.00 RE R RE 0.99 RE S V STYE 3: PIN 1. NODE 2. CTHODE 3. NODE. CTHODE VIEW WW VIEW WW VIEW WW SODERING OOTPRINT* X X PITCH DIENSIONS: IIETERS *or additional information on our Pbree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SODERR/D.
5 BRB255CTG, SBRB255CTG ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICTION ORDERING INORTION ITERTURE UIENT: iterature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado US Phone: or Toll ree US/Canada ax: or Toll ree US/Canada orderlit@onsemi.com N. merican Technical Support: Toll ree US/Canada Europe, iddle East and frica Technical Support: Phone: Japan Customer ocus Center Phone: ON Semiconductor Website: Order iterature: or additional information, please contact your local Sales Representative BRB255CT/D
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2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140
NL17SZ16. Single Input Buffer
NL7SZ6 Single Input Buffer The NL7SZ6 is a single input Buffer in two tiny footprint packages. The device performs much as LCX multi gate products in speed and drive. Features Tiny SOT 33 and SOT 3 Packages
NL17SZ17. Single Non-Inverting Buffer with Schmitt Trigger
NL7SZ7 Single Non-Inverting Buffer with Schmitt Trigger The NL7SZ7 is a single Non inverting Schmitt Trigger Buffer in two tiny footprint packages. The device performs much as LCX multi gate products in
MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.
LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage
74HCT32. Quad 2 Input OR Gate with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
Quad 2 Input OR Gate with STT Compatible Inputs igh Performance Silicon Gate CMOS The 74CT32 is identical in pinout to the S32. The device has TT compatible inputs. Features Output Drive Capability: 0
SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY
of 0 Decoder/Driver Open Collector The SN74LS45, -of-0 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 0-digit incandescent displays. All outputs remain off for
MC74VHC1G00. Single 2-Input NAND Gate
MC74CG00 Single 2-Input NND Gate The MC74CG00 is an advanced high speed CMOS 2 input NND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including
SN74LS125A, SN74LS126A. Quad 3 State Buffers LOW POWER SCHOTTKY. LS125A LS126A TRUTH TABLES ORDERING INFORMATION
Quad 3 State Buffers V CC E D O E D O 4 3 2 0 9 8 LOW POWER SCHOTTKY 2 3 4 5 6 E D O E D O LS25A GND V CC E D O E D O 4 3 2 0 9 8 4 PLASTIC N SUFFIX CASE 646 LS25A INPUTS 2 3 4 5 6 E D O E LS26A D O GND
2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector
SN74LS42MEL. One of Ten Decoder LOW POWER SCHOTTKY
SN74S42 One of Ten Decoder The STT/ MSI SN74S42 is a Multipurpose Decoder designed to accept four BCD inputs and provide ten mutually exclusive outputs. The S42 is fabricated with the Schottky barrier
BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter
FFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A
FFS512AF-DIE Silicon Carbide Schottky Diode 12 V, 5 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual
NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.
NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit
NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit
SN74LS541. Octal Buffer/Line Driver with 3 State Outputs LOW POWER SCHOTTKY
SN74S54 Octal uffer/ine Driver with 3 State Outputs The SN74S54 is an octal buffer and line driver with the same functions as the S24, but with pinouts on the opposite side of the package. This device
2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base
BC846ALT1 Series. General Purpose Transistors. NPN Silicon
BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages
RS1A - RS1M Fast Rectifiers
RSA - RSM Fast Rectifiers Features Glass-Passivated Junction For Surface Mounted Applications uilt-in Strain Relief, Ideal for Automated Placement UL Certified: Certificate # E326243 SMA/DO-24AC COLOR
SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY
Quad 2 Input Schmitt Trigger NAND Gate The SN74LS32 contains four 2-Input NAND Gates which accept standard TTL input signals and provide standard TTL output levels. They are capable of transforming slowly
Features. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
NTS1045MFST3G NRVTS1045MFST3G. Exceptionally Low Forward Voltage Trench-based Schottky Rectifier SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 45 VOLTS
NTS4MFS, NRVTS4MFS Exceptionally Low Forward Voltage Trench-based Schottky Rectifier Features Fine Lithography Trench based Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching
NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
NL27WZ00. Dual 2-Input NAND Gate. The NL27WZ00 is a high performance dual 2 input NAND Gate operating from a 1.65 V to 5.5 V supply.
Dual 2-Input NAND Gate The N27WZ00 is a high performance dual 2 input NAND Gate operating from a.65 to 5.5 supply. Features Extremely igh Speed: t PD ns (typical) at = 5.0 Designed for.65 to 5.5 Operation
SN74LS74AMEL LOW POWER SCHOTTKY
The SN74S74A dual edge-triggered flip-flop utilizes Schottky TT circuitry to produce high speed D-type flip-flops. Each flip-flop has individual clear and set inputs, and also complementary Q and Q outputs.
NLSV2T Bit Dual-Supply Non-Inverting Level Translator
2-Bit Dual-Supply Non-Inverting Level Translator The NLSV2T2 is a 2 bit configurable dual supply voltage level translator. The input n and output B n ports are designed to track two different power supply
NL27WZ00. Dual 2 Input NAND Gate L1 D
Dual 2 Input NAND Gate The N27WZ00 is a high performance dual 2 input NAND Gate operating from a to 5.5 supply. Extremely igh Speed: t PD 2.4 ns (typical) at CC = 5 Designed for to 5.5 CC Operation Over
NL27WZ14. Dual Schmitt-Trigger Inverter
N7WZ Dual Schmitt-Trigger Inverter The N7WZ is a high performance dual inverter with Schmitt Trigger inputs operating from a.5 to supply. Pin configuration and function are the same as the N7WZ0, but the
NTS12120MFST3G NRVTS12120MFST3G. Very Low Forward Voltage Trench-based Schottky Rectifier TRENCH SCHOTTKY RECTIFIERS 12 AMPERES 120 VOLTS
NTSMFS, NRVTSMFS Very Low Forward Voltage Trench-based Schottky Rectifier Features Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching with Exceptional
FFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A
FFSH65BDN-F85 Silicon Carbide Schottky Diode, 65 V, A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability