NTB5426N, NTP5426N, NVB5426N. Power MOSFET 120 Amps, 60 Volts N-Channel D 2 PAK, TO-220

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NTB56N, NTP56N, NVB56N Power OSET Amps, 6 Volts N-Channel D PAK, TO- eatures ow R DS(on) High Current Capability Avalanche Energy Specified AEC Q Qualified NVB56N These Devices are Pb ree and are

1 NTB56N, NTP56N, NVB56N Power OSET Amps, 6 Volts N-Channel D PAK, TO- eatures ow R DS(on) High Current Capability Avalanche Energy Specified AEC Q Qualified NVB56N These Devices are Pb ree and are RoHS Compliant Applications Power Supplies Converters Power otor Controls Bridge Circuits AXIU RATINS ( Unless otherwise specified) Parameter Symbol Value Unit to Source Voltage V DSS 6 V ate to Source Voltage Continuous V S V ate to Source Voltage Nonrepetitive (T P < s) Continuous Current R JC (Note ) Power Dissipation R JC (Note ) Steady State Steady State V S V T C = 5 C I D A T C = C 85 T C = 5 C P D 5 W Pulsed Current t p = s I D 6 A Operating and Storage Temperature Range T J, T stg 55 to +75 Source Current (Body Diode) I S 6 A Single Pulse to Source Avalanche Energy Starting (V DD = 5 V dc, V S = V dc, I (pk) = 7 A, =. mh, R = 5 ) ead Temperature for Soldering Purposes, /8 from Case for Seconds THERA RESISTANCE RATINS C E AS 75 mj T 6 C Parameter Symbol ax Unit Junction to Case () Steady State (Note ) R JC.7 C/W Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. unctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on R board using sq in pad size, (Cu Area.7 sq in [ oz] including traces). V (BR)DSS ate 56N AYWW A Y WW R DS(ON) AX TO AB CASE A STYE 5 ARKIN DIARAS & PIN ASSINENTS Source ate D PAK CASE 8B STYE 56N AYWW = Pb ree Device = Assembly ocation = Year = Work Week I D AX (Note ) 6 V 6. V A N Channel D Source ORDERIN INORATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. S Semiconductor Components Industries, C, October, Rev. Publication Order Number: NTB56N/D

2 NTB56N, NTP56N, NVB56N EECTRICA CHARACTERISTICS ( Unless otherwise specified) Characteristics Symbol Test Condition in Typ ax Unit O CHARACTERISTICS to Source Breakdown Voltage V (BR)DSS V DS = V, I D = 5 A 6 V to Source Breakdown Voltage Temperature Coefficient V (BR)DSS /T J 6 mv/ C Zero ate Voltage Current I DSS V S = V V DS = 6 V. A T J = 5 C 5 ate Body eakage Current I SS V DS = V, V S = V na ON CHARACTERISTICS (Note ) ate Threshold Voltage V S(th) V S = V DS, I D = 5 A... V Negative Threshold Temperature Coefficient V S(th) /T J 9. mv/ C to Source On Voltage V DS(on) V S = V, I D = 6 A..6 V V S = V, I D = 6 A, 5 C.6 Static to Source On Resistance R DS(on) V S = V, I D = 6 A.9 6. m orward Transconductance g S V DS = 5 V, I D = A 65 S CHARES, CAPACITANCES & ATE RESISTANCE Input Capacitance C iss V DS = 5 V, V S = V, 58 p Output Capacitance C oss f = Hz Transfer Capacitance C rss 7 Total ate Charge Q (TOT) V S = V, V DS = 8 V, 5 7 nc Threshold ate Charge Q (TH) I D = 6 A 6. ate to Source Charge Q S 8 ate to Charge Q D 67 SWITCHIN CHARACTERISTICS, V S = V (Note ) Turn On Delay Time t d(on) V S = V, V DD = 8 V, 5 ns Rise Time t r I D = 6 A, R =. Turn Off Delay Time t d(off) 5 all Time t f 95 DRAIN SOURCE DIODE CHARACTERISTICS orward Diode Voltage V SD V S = V I S = 6 A.88. V dc T J = C.78 Reverse Recovery Time t rr I S = 6 A dc, V S = V dc, 75 ns Charge Time t a di S /dt = A/ s 5 Discharge Time t b 5 Reverse Recovery Stored Charge Q RR 5 C. Pulse Test: Pulse Width s, Duty Cycle %.. Switching characteristics are independent of operating junction temperatures. ORDERIN INORATION Device Package Shipping NTP56N TO AB (Pb ree) 5 Units / Rail NTB56NT D PAK (Pb ree) 8 / Tape & Reel NVB56NT D PAK (Pb ree) 8 / Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.

3 NTB56N, NTP56N, NVB56N TYPICA CHARACTERISTICS 6 8 V 6. V 6.6 V 6. V 6. V 5.8 V 5. V 5. V V S =.6 V V DS V T J = 55 C V S, ATE TO SOURCE VOTAE (V) igure. On Region Characteristics igure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ) V S, ATE TO SOURCE VOTAE (V) I D = 6 A igure. On Resistance vs. ate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE ( ) V S = V igure. On Resistance vs. Current and ate Voltage R DS(on), DRAIN TO SOURCE RES- ISTANCE (NORAIZED) I D = 6 A V S = V T J, JUNCTION TEPERATURE ( C) igure 5. On Resistance Variation with Temperature I DSS, EAKAE (na), V S = V T J = 5 C igure 6. to Source eakage Current vs. Voltage

4 NTB56N, NTP56N, NVB56N TYPICA CHARACTERISTICS C, CAPACITANCE (p),, 8 6 C iss C oss C rss V S = V 5 6 V S, ATE TO SOURCE VOTAE (V) Q 5 5 QT Q 75 I D = 6 A V DS = 8 V 5 5 Q, TOTA ATE CHARE (nc) igure 7. Capacitance Variation igure 8. ate to Source Voltage vs. Total Charge t, TIE (ns) V DD = 8 V I D = 6 A V S = V t d(off) t r t f t d(on) I S, SOURCE CURRENT (A) 8 6 V S = V.. R, ATE RESISTANCE ( ) igure 9. Resistive Switching Time Variation vs. ate Resistance V SD, SOURCE TO DRAIN VOTAE (V) igure. Diode orward Voltage vs. Current... V S = V Single Pulse T C = 5 C dc ms R DS(on) imit Thermal imit Package imit ms s igure. aximum Rated orward Biased Safe Operating Area s AVAANCHE ENERY (mj) I D = 7 A 5 T J, STARTIN JUNCTION TEPERATURE ( C) igure. aximum Avalanche Energy vs. Starting Junction Temperature 75

5 NTB56N, NTP56N, NVB56N TYPICA CHARACTERISTICS D =.5.. R(t) ( C/W) Single Pulse..... Surface ounted on R Board using sq in pad size, oz Cu.. PUSE TIE (sec) igure. Thermal Response 5

6 NTB56N, NTP56N, NVB56N PACKAE DIENSIONS T SEATIN PANE B S D P. (.5) T B K C H D PAK CASE 8B ISSUE K A E V W J W NOTES:. DIENSIONIN AND TOERANCIN PER ANSI Y.5, 98.. CONTROIN DIENSION: INCH.. 8B THRU 8B OBSOETE, NEW STANDARD 8B. INCHES IIETERS DI IN AX IN AX A B C D E BSC.5 BSC H J K N.97 RE 5. RE P.79 RE. RE R.9 RE.99 RE S V VARIABE CONIURATION ZONE R N U P STYE : PIN. ATE. DRAIN. SOURCE. DRAIN VIEW W W VIEW W W VIEW W W SODERIN OOTPRINT* X.5 X PITCH DIENSIONS: IIETERS *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SODERR/D. 6

7 NTB56N, NTP56N, NVB56N PACKAE DIENSIONS TO CASE A 9 ISSUE A H Q Z V B N D A K T U S R J C T SEATIN PANE NOTES:. DIENSIONIN AND TOERANCIN PER ANSI Y.5, 98.. CONTROIN DIENSION: INCH.. DIENSION Z DEINES A ZONE WHERE A BODY AND EAD IRREUARITIES ARE AOWED. INCHES IIETERS DI IN AX IN AX A B C D H J K N Q...5. R S T U V Z STYE 5: PIN. ATE. DRAIN. SOURCE. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORDERIN INORATION ITERATURE UIENT: iterature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: or 8 86 Toll ree USA/Canada ax: or Toll ree USA/Canada orderlit@onsemi.com N. American Technical Support: Toll ree USA/Canada Europe, iddle East and Africa Technical Support: Phone: 79 9 Japan Customer ocus Center Phone: ON Semiconductor Website: Order iterature: or additional information, please contact your local Sales Representative NTB56N/D

NTP5N6, NTB5N6 EECTRICA CHARACTERISTICS (T J = 5 C unless otherwise noted) O CHARACTERISTICS tosource Breakdown Voltage (Note ) (V S =, I D = 5 Adc) T

NTP5N6, NTB5N6 EECTRICA CHARACTERISTICS (T J = 5 C unless otherwise noted) O CHARACTERISTICS tosource Breakdown Voltage (Note ) (V S =, I D = 5 Adc) T NTP5N6, NTB5N6 Power OSET 5 Amps, 6 Volts NChannel TO and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. eatures