MBRB4030G, NRVBB4030T4G

Transcription

1 BRB3G, NRVBB3TG Preferred Device SWITCHODE Power Rectifier These state of the art devices use the Schottky Barrier principle with a proprietary barrier metal. Features Guardring for Stress Protection aximum Die Size 175 C Operating Junction Temperature Short Heat Sink Tab anufactured Not Sheared EC Q1 Qualified and PPP Capable NRVBB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements ll Packages are Pb Free* echanical Characteristics: Case: Epoxy, olded, Epoxy eets UL 9 V Weight: 1.7 Grams (pproximately) Finish: ll External Surfaces Corrosion Resistant and Terminal Leads Readily Solderable Device eets SL1 Requirements ESD Ratings: achine odel = C (> V) Human Body odel = 3B (> 8 V) SCHOTTKY BRRIER RECTIFIER PERES, 3 VOLTS 1 3 D 2 PK CSE 18B STYLE 3 RKING DIGR Y WW B3G K Y WW B3 G K = ssembly Location = Year = Work Week = Device Code = Pb Free Package = Diode Polarity ORDERING INFORTION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SOLDERR/D. Semiconductor Components Industries, LLC, 12 January, 12 Rev. 7 1 Publication Order Number: BRB3/D

2 BRB3G, NRVBB3TG XIU RTINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Rating Symbol Value Unit V RR V RW V R 3 V verage Rectified Forward Current (t Rated V R ) T C = +115 C (Note 1) Peak Repetitive Forward Current (t Rated V R, Square Wave, khz), T C = +112 C Non Repetitive Peak Surge Current (Surge pplied at Rated Load Conditions Halfwave, Single Phase, 6 Hz) I F(V) I FR 8 I FS 3 Peak Repetitive Reverse Surge Current (2. s, 1. khz) I RR 2. Storage Temperature Range T stg 65 to +175 C Operating Junction Temperature Range (Note 2) T J 65 to +175 C Voltage Rate of Change (Rated V R ) dv/dt, V/ s Reverse Energy (Unclamped Inductive Surge), (T C =, L = 3. mh) W 6 mj Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Rating applies when pins 1 and 3 are connected. 2. The heat generated must be less than the thermal conductivity from Junction to mbient: dp D /dt J < 1/R J. THERL CHRCTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R JC 1. C/W Thermal Resistance, Junction to mbient (Note 3) R J 5 C/W 3. Rating applies when surface mounted on the miniumum pad size recommended. ELECTRICL CHRCTERISTICS aximum Instantaneous Forward Voltage (Notes and 5), per Device (I F =, T C = + ) (I F =, T C = +15 C) (I F =, T C = + ) (I F =, T C = +15 C) aximum Instantaneous Reverse Current (Note 5), per Device (Rated Voltage, T C = + ) (Rated Voltage, T C = +1). Rating applies when pins 1 and 3 are connected. 5. Pulse Test: Pulse Width = 3 s, Duty Cycle 2.% Characteristic Symbol Value Unit V F I R V m ORDERING INFORTION BRB3G Device Package Shipping D 2 PK (Pb Free) 5 Units / Rail BRB3TG D 2 PK (Pb Free) 8 Units / Tape & Reel NRVBB3TG D 2 PK (Pb Free) 8 Units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2

3 BRB3G, NRVBB3TG ELECTRICL CHRCTERISTICS IF, INSTNTNEOUS FORWRD CURRENT () 1. C T J = 15 C I F, INSTNTNEOUS FORWRD CURRENT () V F, INSTNTNEOUS VOLTGE (V) V F, INSTNTNEOUS VOLTGE (V) 1. C T J = 15 C.6.7 Figure 1. aximum Forward Voltage Figure 2. Typical Forward Voltage IR, REVERSE CURRENT () T J = 15 C C I R, REVERSE CURRENT () T J = 15 C C V R, REVERSE VOLTGE (V) V R, REVERSE VOLTGE (V) Figure 3. aximum Reverse Current Figure. Typical Reverse Current T J = C, CPCITNCE (pf) TYPICL XIU 1 V R, REVERSE VOLTGE (V) Figure 5. aximum and Typical Capacitance 3

4 BRB3G, NRVBB3TG ELECTRICL CHRCTERISTICS I F(V), VERGE FORWRD CURRENT () (RESISTIVE LOD) SQURE WVE = 5. (CPCITIVE I V LOD) T C, CSE TEPERTURE ( C) I F(V), VERGE FORWRD CURRENT () 15 5 (RESISTIVE LOD) SQURE WVE 5 T, BIENT TEPERTURE ( C) R J = /W SURFCE OUNTED ON INIU RECOENDED PD SIZE I V = 5. (CPCITIVE LOD) 15 Figure 6. Current Derating, Infinite Heatsink Figure 7. Current Derating I F(V), VERGE FORWRD CURRENT () (RESISTIVE LOD) SQURE WVE I V 5 T, BIENT TEPERTURE ( C) R J = 5 C/W = 5. (CPCITIVE LOD) 15 PF(V), VERGE FORWRD POWER DISSIPTION (WTTS) 5 3 I V = 5. (CPCITIVE LOD) (RESISTIVE LOD) T J = 15 C SQURE WVE I F(V), VERGE FORWRD CURRENT () Figure 8. Current Derating, Free ir Figure 9. Forward Power Dissipation R(t), EFFECTIVE TRNSIENT THERL RESISTNCE (NORLIZED) 1..1 SINGLE PULSE P pk P pk DUTY CYCLE, D = t p /t 1 t p PEK POWER, P pk, is peak of an TIE equivalent square power pulse. t 1 T JL = P pk R JL [D + (1 - D) r(t 1 + t p ) + r(t p ) - r(t 1 )] where T JL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, for example, r(t) = r(t 1 + t p ) = normalized value of transient thermal resistance at time, t 1 + t p. 1. t, TIE (ms) Figure. Thermal Response

5 BRB3G, NRVBB3TG PCKGE DIENSIONS D 2 PK 3 CSE 18B ISSUE K T SETING PLNE 1 B G 2 3 VRIBLE CONFIGURTION ZONE S D 3 PL 3 (.5) T R B K C H N E V W W J U P NOTES: 1. DIENSIONING ND TOLERNCING PER NSI Y1.5, CONTROLLING DIENSION: INCH B 1 THRU 18B 3 OBSOLETE, NEW STNDRD 18B. INCHES ILLIETERS DI IN X IN X B C D E F G. BSC 2.5 BSC H J K L N 97 REF 5. REF P.79 REF 2. REF R.39 REF.99 REF S V STYLE 3: PIN 1. NODE 2. CTHODE 3. NODE. CTHODE L L L F F F VIEW W W VIEW W W VIEW W W SOLDERING FOOTPRINT* X 3.5 2X PITCH DIENSIONS: ILLIETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SOLDERR/D. 5

6 BRB3G, NRVBB3TG ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORTION LITERTURE FULFILLENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, iddle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative BRB3/D