NGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj

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1 NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology T Jmax = C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching s Short Circuit Capability These are PbFree Devices Typical pplications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Welding BSOLUTE MXIMUM RTINGS Rating Symbol Value Unit Collectoremitter voltage V CES V Collector TC = TC = C I C Pulsed collector current, T pulse I CM limited by T Jmax Diode forward TC = TC = C I F Diode pulsed current, T pulse limited I FM by T Jmax Gateemitter voltage Transient gateemitter voltage (T pulse = s, D <.) Power TC = TC = C Short Circuit Withstand Time V GE = V, V CE = V, T J C Operating junction temperature range V GE ± P D V W T SC s T J to + C Storage temperature range T stg to + C Lead temperature for soldering, / from case for seconds T SLD C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. G C E Y WW G, V V CEsat =. V =. mj TO CSE L ORDERING INFORMTION Device Package Shipping NGTBNFLWG G C MRKING DIGRM NFL YWWG E = ssembly Location = Year = Work Week = PbFree Package TO (PbFree) Units / Rail Semiconductor Components Industries, LLC, October, Rev. Publication Order Number: NGTBNFLW/D

2 NGTBNFLWG THERML CHRCTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R JC. C/W Thermal resistance junctiontocase, for Diode R JC. C/W Thermal resistance junctiontoambient R J C/W ELECTRICL CHRCTERISTICS (T J = C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STTIC CHRCTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = V (BR)CES V Collectoremitter saturation voltage V GE = V, I C = V GE = V, I C =, T J = C Gateemitter threshold voltage V GE = V CE, I C = V GE(th)... V Collectoremitter cutoff current, gate emitter shortcircuited Gate leakage current, collectoremitter shortcircuited V GE = V, V CE = V V GE = V, V CE = V, T J = C V CEsat I CES... V GE = V, V CE = V I GES n. V m Input capacitance C ies pf Output capacitance V CE = V, V GE = V, f = MHz C oes Reverse transfer capacitance C res Gate charge total Q g nc Gate to emitter charge V CE = V, I C =, V GE = V Q ge Gate to collector charge Q gc SWITCHING CHRCTERISTIC, INDUCTIVE LOD Turnon delay time ns Rise time Turnoff delay time T J = C Fall time V CC = V, I C = R g = Turnon switching loss V GE = V/ V. mj Turnoff switching loss. Total switching loss E ts. Turnon delay time ns Rise time Turnoff delay time T J = C Fall time V CC = V, I C = R g = Turnon switching loss V GE = V/ V. mj Turnoff switching loss. Total switching loss E ts.9 DIODE CHRCTERISTIC Forward voltage V GE = V, I F = V GE = V, I F =, T J = C Reverse recovery time T J = C r ns Reverse recovery charge I F =, V R = V di F /dt = / s Q rr. c Reverse recovery current I rrm V F... V

3 NGTBNFLWG TYPICL CHRCTERISTICS V GE = V to V V T J = C V V 9 V V T J = C V GE = V to V V V 9 V V V V CE, COLLECTOREMITTER VOLTGE (V) V CE, COLLECTOREMITTER VOLTGE (V) Figure. Output Characteristics Figure. Output Characteristics V GE = V to V V T J = C V V 9 V V T J = C T J = C 9 V CE, COLLECTOREMITTER VOLTGE (V) V GE, GTEEMITTER VOLTGE (V) Figure. Output Characteristics Figure. Typical Transfer Characteristics V CE, COLLECTOREMITTER VOLTGE (V) I C = I C = I C = C, CPCITNCE (pf) C ies C oes C res T J = C 9 T J, JUNCTION TEMPERTURE ( C) V CE, COLLECTOREMITTER VOLTGE (V) Figure. V CE(sat) vs T J Figure. Typical Capacitance

4 NGTBNFLWG TYPICL CHRCTERISTICS I F, FORWRD CURRENT () T J = C T J = C V GE, GTEEMITTER VOLTGE (V) V CE = V V GE = V I C = V F, FORWRD VOLTGE (V) Q G, GTE CHRGE (nc) Figure. Diode Forward Characteristics Figure. Typical Gate Charge V CE = V..... V CE = V V GE = V I C = Rg = V CE = V V GE = V I C = Rg = T J, JUNCTION TEMPERTURE ( C) T J, JUNCTION TEMPERTURE ( C) Figure 9. Switching Loss vs. Temperature Figure. Switching Time vs. Temperature V CE = V V GE = V T J = C Rg = V CE = V V GE = V I C = Rg = Figure. Switching Loss vs. I C Figure. Switching Time vs. I C

5 NGTBNFLWG TYPICL CHRCTERISTICS V CE = V V GE = V T J = C I C = V CE = V V GE = V T J = C I C = Rg, GTE RESISTOR ( ) Rg, GTE RESISTOR ( ) Figure. Switching Loss vs. Rg Figure. Switching Time vs. Rg V GE = V T J = C I C = Rg = V GE = V T J = C I C = Rg = V CE, COLLECTOREMITTER VOLTGE (V) V CE, COLLECTOREMITTER VOLTGE (V) Figure. Switching Loss vs. V CE Figure. Switching Time vs. V CE.. dc operation Single Nonrepetitive Pulse T C = C Curves must be derated linearly with increase in temperature s V CE, COLLECTOREMITTER VOLTGE (V) Figure. Safe Operating rea s ms V GE = V, T C = C V CE, COLLECTOREMITTER VOLTGE (V) Figure. Reverse Bias Safe Operating rea

6 NGTBNFLWG TYPICL CHRCTERISTICS V CE = V, R G =, V GE = / V T C = C T C = C T C = C Ipk ().. FREQUENCY (khz) Figure 9. Collector Current vs. Switching Frequency SQUREWVE PEK R(t) ( C/W).... E % Duty Cycle % % % % Single Pulse E. Junction R R C C. ONPULSE WIDTH (s) Duty Factor = t /t Peak T J = P DM x Z JC + T C. Figure. IGBT Transient Thermal Impedance R n C n Case R J =.. R i ( C/W) C i (J/ C) SQUREWVE PEK R(t) ( C/W).. % Duty Cycle % % % % Single Pulse R JC =. Junction R R R n C C Duty Factor = t /t Peak T J = P DM x Z JC + T C. E E... ONPULSE WIDTH (s) Figure. Diode Transient Thermal Impedance C n Case R i ( C/W) C i (J/ C)

7 NGTBNFLWG PCKGE DIMENSIONS TO CSE L ISSUE E/ NOTE D L X b NOTE E e Q E NOTE L NOTE c b X b. M B M B NOTE SETING PLNE S P. M B M NOTE NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. SLOT REQUIRED, NOTCH MY BE ROUNDED.. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH. MOLD FLSH SHLL NOT EXCEED. PER SIDE. THESE DIMENSIONS RE MESURED T THE OUTERMOST EXTREME OF THE PLSTIC BODY.. LED FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L.. P SHLL HVE MXIMUM DRFT NGLE OF. TO THE TOP OF THE PRT WITH MXIMUM DIMETER OF.9.. DIMENSION TO BE MESURED IN THE REGION DEFINED BY L. MILLIMETERS DIM MIN MX.... b.. b.. b.. c.. D.. E.. E..9 e. BSC L 9.. L.. P.. Q.. S. BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes withouurther notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patenights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligenegarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is noor resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box, Denver, Colorado US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: 9 Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: 9 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NGTBNFLW/D