NL17SG07. Buffer with Open Drain. Output Y
|
|
|
- Lee Young
- 5 years ago
- Views:
Transcription
1 NL7SG07 Buffer with Open Drain Output The NL7SG07 MiniGate is an advanced high speed CMOS Buffer with Open Drain Output in ultra small footprint. The NL7SG07 input structures provides protection when voltages up to. are applied with greater than or equal to 0.9 volts, otherwise the protection is up to.6 volts regardless of the supply voltage. Features Wide Operating Range: 0.9 to 3.6 High Speed: t PD =. ns (Typ) at = 3.0, C L = pf Low Power Dissipation: I CC = 0. (Max) at T = C. Overvoltage Tolerant (OT) Input Pins ( 0.9 ) Ultra Small Packages These are Pb Free and Halide Free Devices SOT 93 CSE 7E UDFN6.0 x.0 CSE 7BX UDFN6. x.0 CSE 7Q SC 88 DF SUFFIX CSE 9 MRKING DIGRMS M 6 M J M M Q M 3 Figure. SOT 93 (Top iew) 3 Figure. SC 88 (Top iew) M = Date Code* = Pb Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. 6 PSSIGNMENT PIN SOT 93 SC 88 UDFN6 3 3 Figure 3. UDFN (Top iew) 6 Figure. Logic Symbol FUTION TBLE Input Output Y L L H Z ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 03 ugust, 03 Rev. Publication Order Number: NL7SG07/D
2 NL7SG07 MXIMUM RTINGS Symbol Parameter alue Unit DC Supply oltage 0. to +. IN DC Input oltage 0. to +.6 OUT DC Output oltage Output at High or Low State Power Down Mode ( = 0 ) 0. to to +.6 I IK DC Input Diode Current IN < 0 m I OK DC Output Diode Current OUT < 0 m I OUT DC Output Source/Sink Current ±0 m I CC DC Supply Current per Supply Pin ±0 m I DC Ground Current per Ground Pin ±0 m T STG Storage Temperature Range 6 to +0 C T L Lead Temperature, mm from Case for 0 Seconds 60 C T J Junction Temperature Under Bias +0 C MSL Moisture Sensitivity Level F R Flammability Rating Oxygen Index: 8 to 3 UL 9 0. in ESD ESD Withstand oltage Human Body Model (Note ) Machine Model (Note 3) >000 >00 I LTCHUP Latch up Performance above and below at C (Note ) ±7 m Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Measured with minimum pad spacing on an FR board, using 0 mm by inch, ounce copper trace with no air flow.. Tested to EI/JESD. 3. Tested to EI/JESD.. Tested to EI/JESD78. RECOMMENDED OPERTING CONDITIONS Symbol Characteristics Min Max Unit Positive DC Supply oltage IN Digital Input oltage OUT Output oltage Output at High or Low State Power Down Mode ( = 0 ) T Operating Temperature Range + C t / Input Transition Rise or Fail Rate = 3.3 ± ns/
3 NL7SG07 DC ELECTRICL CHRCTERISTICS Symbol Parameter Condition IH High Level Input oltage () T = C C T C Min Typ Max Min Max 0.9. to x 0.70 x Unit. to.6.6 to x 0.6 x 0.6 x 0.6 x IL Low Level Input oltage.3 to to to x 0.30 x. to.6.6 to x 0.3 x 0.3 x 0.3 x.3 to to OL Low Level Output oltage IN = IH or IL I OL = I OL = 0.3 m. to.3 0. x 0. x I OL =.7 m. to.6 0. x 0. x I IN I CC Input Leakage Current Quiescent Supply Current I OL = 3.0 m.6 to I OL =.0 m.3 to I OL = 8.0 m 3.0 to IN to 3.6 ±0. ±.0 IN = or
4 NL7SG07 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C ELECTRICL CHRCTERISTICS (Input t r = t f = 3.0 ns) Symbol Parameter Test Condition () t PZL t PLZ Propagation Delay, Enable Time, to Y Propagation Delay, Disable Time, to Y C L = 0 pf, R = R L = k C L = pf, R = R L = k C L = 30 pf, R = R L = k C L = 0 pf, R = R L = k C L = pf, R = R L = k C L = 30 pf, R = R L = k T = C T = C to + C Min Typ Max Min Max 0.9 ns. to to to to to ns. to to to to to ns. to to to to to ns. to to to to to ns. to to to to to ns. to to to to to C IN Input Capacitance 0 to pf C PD Power Dissipation Capacitance (Note ) 0.9 to 3.6 pf. C PD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. verage operating current can be obtained by the equation: I CC(OPR) = C PD f in + I CC. C PD is used to determine the no load dynamic power consumption; P D = C PD f in + I CC. Unit
5 NL7SG07 Y 0% t PZL t PLZ 0% 0% HIGH IMPEDE Figure. Switching Waveform PULSE GENERTOR DUT R R T C L R L Test t PZL t PLZ Switch x x Figure 6. Test Circuit ORDERING INFORMTION NL7SG07PTG Device Package Shipping SOT 93 (Pb Free) 8000 / Tape & Reel NL7SG07DFTG* NL7SG07MUTCG* SC 88 (Pb Free) UDFN6.x mm (Pb Free) 3000 / Tape & Reel 3000 / Tape & Reel NL7SG07CMUTCG* UDFN6 x mm (Pb Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. *In Development
6 NL7SG07 PCKGE DIMENSIONS SOT 93 CSE 7E ISSUE E PIN ONE INDICTOR D 3 TOP IEW e X Y E X L C SIDE IEW H E NOTES:. DIMENSIONING ND TOLERING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS 3. MXIMUM LED THICKNESS ILUDES LED FINISH. MINIMUM LED THICKNESS IS THE MINIMUM THICKNESS OF THE BSE MTERIL.. DIMENSIONS D ND E DO NOT ILUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. MILLIMETERS DIM MIN NOM MX b C D E e 0.3 BSC H E L 0.7 REF L L3 0. X L3 X L SOLDERING FOOTPRINT* X b BOTTOM IEW 0.08 X Y PCKGE OUTLINE.0 X 0.0 X PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6
7 NL7SG07 PCKGE DIMENSIONS UDFN6.0x.0, 0.3P CSE 7BX ISSUE O PIN ONE REFEREE X X 0.0 C D ÉÉÉ 0.0 C 0.0 C 0.0 C L TOP IEW SIDE IEW e 3 B E 3 X L C SETING PLNE NOTES:. DIMENSIONING ND TOLERING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b PPLIES TO PLTED TERMINL ND IS MESURED BETWEEN 0. ND 0.0 MM FROM TERMINL TIP.. PCKGE DIMENSIONS EXCLUSIE OF BURRS ND MOLD FLSH. MILLIMETERS DIM MIN MX REF b D.00 BSC E.00 BSC e 0.3 BSC L L RECOMMENDED SOLDERING FOOTPRINT* X 6X BOTTOM IEW 6X b 0.0 M C B 0.0 M C NOTE PKG OUTLINE 0.3 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
8 NL7SG07 PCKGE DIMENSIONS UDFN6.x.0, 0.P CSE 7Q ISSUE O 6X PIN ONE REFEREE 0.0 C 0.0 C 0.0 C 0.0 C D ÉÉÉ TOP IEW DETIL B SIDE IEW B E L C SETING PLNE EXPOSED Cu L DETIL OPTIONL CONSTRUCTIONS ÉÉ MOLD CMPD DETIL B OPTIONL CONSTRUCTIONS L NOTES:. DIMENSIONING ND TOLERING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b PPLIES TO PLTED TERMINL ND IS MESURED BETWEEN 0. ND 0.30 mm FROM THE TERMINL TIP. MILLIMETERS DIM MIN MX REF b D. BSC E.00 BSC e 0.0 BSC L L 0. MOUNTING FOOTPRINT PCKGE OUTLINE 6X 0.30 e 3 6X L. DETIL 6 BOTTOM IEW 6X b 0.0 C B 0.0 C NOTE 3 6X PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 8
9 NL7SG07 PCKGE DIMENSIONS S G B 3 D PL 0. (0.008) M B M SC 88 (SC 70 /SOT 33) CSE 9 0 ISSUE L N NOTES:. DIMENSIONING ND TOLERING PER NSI Y.M, 98.. CONTROLLING DIMENSION: IH OBSOLETE. NEW STNDRD DIMENSIONS ND B DO NOT ILUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. IHES MILLIMETERS DIM MIN MX MIN MX B C D G 0.06 BSC 0.6 BSC H J K N REF 0.0 REF S C J H K SOLDER FOOTPRINT* SCLE 0: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Denver, Colorado 807 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NL7SG07/D
NL17SZ16. Single Input Buffer
NL7SZ6 Single Input Buffer The NL7SZ6 is a single input Buffer in two tiny footprint packages. The device performs much as LCX multi gate products in speed and drive. Features Tiny SOT 33 and SOT 3 Packages
NL17SZ17. Single Non-Inverting Buffer with Schmitt Trigger
NL7SZ7 Single Non-Inverting Buffer with Schmitt Trigger The NL7SZ7 is a single Non inverting Schmitt Trigger Buffer in two tiny footprint packages. The device performs much as LCX multi gate products in
NL17SH02. Single 2-Input NOR Gate
N7S0 Single -Input NOR Gate The N7S0 MiniGate is an advanced high speed CMOS input NOR gate in ultra small footprint. The N7S0 input structures provide protection when voltages up to 7.0 are applied, regardless
NLSV2T Bit Dual-Supply Non-Inverting Level Translator
2-Bit Dual-Supply Non-Inverting Level Translator The NLSV2T2 is a 2 bit configurable dual supply voltage level translator. The input n and output B n ports are designed to track two different power supply
NL17SV16. Ultra-Low Voltage Buffer
N7S6 Ultra-ow oltage Buffer The N7S6X5T is an ultra high performance single Buffer fabricated in sub micron silicon gate 0.35 m technology with excellent performance down to 0.9. This device is ideal for
NLSV2T Bit Dual-Supply Inverting Level Translator
2-Bit Dual-Supply Inverting Level Translator The NLSV2T240 is a 2 bit configurable dual supply voltage level translator. The input A n and output B n ports are designed to track two different power supply
NLU1G00 Single 2-Input NAND Gate The NLU1G00 MiniGate is an advanced high speed CMOS 2 input NAND gate in ultra small footprint. The NLU1G00 input and
Single 2-Input NND Gate The MiniGate is an advanced high speed CMOS 2 input NND gate in ultra small footprint. The input and output structures provide protection when voltages up to 7. are applied, regardless
NL17SZ16. Single Input Buffer
Single Input Buffer The NL7SZ6 is a single input Buffer in two tiny footprint packages. The device performs much as LCX multi-gate products in speed and drive. Tiny SOT- 33 and SOT- 3 Packages Source/Sink
V N (8) V N (7) V N (6) GND (5)
4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level
NL17SZ08. Single 2-Input AND Gate
N7SZ08 Single 2-Input AND Gate The N7SZ08 is a single 2 input AND Gate in two tiny footprint packages. The device performs much as CX multi gate products in speed and drive. They should be used wherever
NL37WZ07. Triple Buffer with Open Drain Outputs
Triple Buffer with Open Drain Outputs The N7WZ7 is a high performance triple buffer with open drain outputs operating from a.6 to. supply. The internal circuit is composed of multiple stages, including
NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
74HCT245. Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs. High-Performance Silicon-Gate CMOS
Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs High-Performance Silicon-Gate CMOS The 74HCT245 is identical in pinout to LS245. The device has TTL-Compatible Inputs. The HCT245
FST Bit Bus Switch
FST32 4-Bit Bus Switch The ON Semiconductor FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and adds
BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol
NL17SZ02. 2-Input NOR Gate
N7SZ0 -Input NOR Gate The N7SZ0 is a single input NOR Gate in three tiny footprint packages. The device performs much as CX multi gate products in speed and drive. Features Tiny SOT, SOT and SOT 9 Packages.
MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter
MC74CGT0 Noninverting Buffer / CMOS Logic Level Shifter TTL Compatible Inputs The MC74CGT0 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation
NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88
NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class
onlinecomponents.com
MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
NL27WZ14. Dual Schmitt Trigger Inverter
N7WZ Dual Schmitt Trigger Inverter The N7WZ is a high performance dual inverter with Schmitt Trigger inputs operating from a.5 to supply. Pin configuration and function are the same as the N7WZ0, but the
NL17SHT08. 2-Input AND Gate / CMOS Logic Level Shifter
N7ST08 -Input AND Gate / CMOS ogic evel Shifter The N7ST08 is an advanced high speed CMOS input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent
NL27WZ08. Dual 2-Input AND Gate. The NL27WZ08 is a high performance dual 2 input AND Gate operating from a 1.65 V to 5.5 V supply.
N27WZ Dual 2-Input AND Gate The N27WZ is a high performance dual 2 input AND Gate operating from a.6 to. supply. Features Extremely igh Speed: t PD 2. ns (typical) at = Designed for.6 to. Operation Over
NB3L553/D. 2.5 V / 3.3 V / 5.0 V 1:4 Clock Fanout Buffer
2.5 V / 3.3 V / 5.0 V :4 Clock Fanout Buffer Description The is a low skew to 4 clock fanout buffer, designed for clock distribution in mind. The specifically guarantees low output to output skew. Optimal
MBRS140T3G SBRS8140T3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS
MBRSTG, SBRS8TG Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage
T95N02R. Power MOSFET 95 Amps, 24 Volts. N Channel DPAK
NTD95NR Power MOSFET 95 mps, Volts N Channel DPK Features High Power and Current Handling Capability Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low Gate Charge to Minimize Switching
MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
MC74VHC1G05. Single Inverter with Open Drain Output
Single Inverter with Open Drain Output The is an advanced high speed MOS inverter with open drain output fabricated with silicon gate MOS technology. The internal circuit is composed of three stages, including
NL27WZ08. Dual 2-Input AND Gate. The NL27WZ08 is a high performance dual 2 input AND Gate operating from a 1.65 V to 5.5 V supply.
Dual 2-Input AND Gate The is a high performance dual 2 input AND Gate operating from a.65 to 5.5 supply. Features Extremely igh Speed: t PD 2.5 ns (typical) at = 5 Designed for.65 to 5.5 Operation Over
74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
of 8 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The 74HC38 is identical in pinout to the LS38. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are
SN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY
Quad 2 Input Multiplexer The LSTTL/ MSI is a high speed Quad 2-Input Multiplexer. Four bits of data from two sources can be selected using the common Select and Enable inputs. The four buffered outputs
BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
MC74LVX50. Hex Buffer
Hex Buffer The MC74LX50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. The internal circuit is composed of three stages, including a buffered output which provides
MC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger
MC74AC32, MC74ACT32 Quad 2 Input NAND Schmitt Trigger The MC74AC/74ACT32 contains four 2 input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter free
MC74VHC14. Hex Schmitt Inverter
MC74HC4 Hex Schmitt Inverter The MC74HC4 is an advanced high speed CMOS Schmitt inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
NL17SZ125. Non-Inverting 3-State Buffer. The NL17SZ125 is a high performance non inverting buffer operating from a 1.65 V to 5.5 V supply.
Non-Inverting 3-State Buffer The N17SZ125 is a high performance non inverting buffer operating from a 1.65 to 5.5 supply. Features Extremely High Speed: t PD 2.6 ns (typical) at CC = 5.0 Designed for 1.65
BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
MC74HC132A. Quad 2 Input NAND Gate with Schmitt Trigger Inputs. High Performance Silicon Gate CMOS
Quad 2 Input NAND Gate with Schmitt Trigger Inputs High Performance Silicon Gate CMOS The is identical in pinout to the LS32. The device inputs are compatible with standard CMOS outputs; with pull up resistors,
74FST Bit Bus Switch
4FST32 4 Bit Bus Switch The ON Semiconductor 4FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and
NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m
NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS
PMT90B Series. Watt Plastic Surface Mount POWERMITE Package This complete new line of. Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat
MC74VHC00. Quad 2-Input NAND Gate
MC74C00 Quad 2-Input NND Gate The MC74C00 is an advanced high speed CMOS 2 input NND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
MC74LCX74. Low-Voltage CMOS Dual D-Type Flip-Flop. With 5 V Tolerant Inputs
Low-oltage CMOS Dual D-Type Flip-Flop With 5 Tolerant Inputs The MC74LCX74 is a high performance, dual D type flip flop with asynchronous clear and set inputs and complementary (O, O) outputs. It operates
MC74AC259, MC74ACT Bit Addressable Latch
8-Bit Addressable Latch The MC259/T259 is a high speed 8 bit addressable latch designed for general purpose storage applicatio in digital systems. It is a multifunctional device capable of storing single
SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY
of 0 Decoder/Driver Open Collector The SN74LS45, -of-0 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 0-digit incandescent displays. All outputs remain off for
MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon
MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control
7SB3125. Bus Switch. The 7SB3125 Bus Switch is an advanced high speed line switch in ultra small footprint.
7S32 us Switch The 7S32 us Switch is an advanced high speed line switch in ultra small footprint. Features High Speed: t PD = 0.2 ns (Max) @ V =. V 3 Switch onnection etween 2 Ports Power Down Protection
74HC245. Octal 3 State Noninverting Bus Transceiver. High Performance Silicon Gate CMOS
Octal 3 State Noninverting Bus Traceiver High Performance Silicon Gate CMOS The 74HC245 is identical in pinout to the LS245. The device inputs are compatible with standard CMOS outputs; with pull up resistors,
NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
74VHC08 Quad 2-Input AND Gate
74VHC08 Quad 2-Input AND Gate Features High Speed: t PD = 4.3ns (Typ.) at T A = 25 C High noise immunity: V NIH = V NIL = 28% V CC (Min.) Power down protection is provided on all inputs Low power dissipation:
MC74LV594A. 8-Bit Shift Register with Output Register
8-Bit Shift Register with Output Register The MC74LV594A is an 8 bit shift register designed for 2 V to 6.0 V V CC operation. The device contain an 8 bit serial in, parallel out shift register that feeds
NL27WZU04. Dual Unbuffered Inverter
Dual Unbuffered Inverter The N27WZU04 is a high performance dual unbuffered inverter operating from a.5 to 5.5 V supply. These devices are well suited for use as oscillators, pulse shapers, and in many
NL17SZ125. Non-Inverting 3-State Buffer. The NL17SZ125 is a high performance non inverting buffer operating from a 1.65 V to 5.5 V supply.
Non-Inverting 3-State Buffer The N7SZ is a high performance non inverting buffer operating from a.6 to. supply. Features Extremely High Speed: t PD.6 ns (typical) at =.0 Designed for.6 to. Operation Overvoltage
74ALVC Low Voltage 1.8/2.5/3.3 V 16 Bit Buffer. With 3.6 V Tolerant Inputs and Outputs (3 State, Non Inverting)
Low Voltage.8/2.5/3.3 V 6 Bit Buffer With 3.6 V Tolerant Inputs and Outputs (3 State, Non Inverting) The 74ALVC6244 is an advanced performance, non inverting 6 bit buffer. It is designed for very high
MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS
MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features
NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
74AC00, 74ACT00 Quad 2-Input NAND Gate
74AC00, 74ACT00 Quad 2-Input NAND Gate Features I CC reduced by 50% Outputs source/sink 24mA ACT00 has TTL-compatible inputs Ordering Information Order Number Package Number General Description The AC00/ACT00
MC74HCT573A/D. Octal 3-State Noninverting Transparent Latch with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
Octal 3-State Noninverting Transparent Latch with LSTTL Compatible Inputs High Performance Silicon Gate CMOS The MC74HCT573A is identical in pinout to the LS573. This device may be used as a level converter
NE522 High Speed Dual Differential Comparator/Sense Amp
HighSpeed DualDifferential Comparator/Sense Amp Features 5 ns Maximum Guaranteed Propagation Delay 0 A Maximum Input Bias Current TTL-Compatible Strobes and Outputs Large Common-Mode Input oltage Range
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
BAT54XV2 Schottky Barrier Diode
June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1
NTSB40200CTG, NTSJ40200CTG. Very Low Forward Voltage Trench-based Schottky Rectifier. Exceptionally Low V F = 0.53 V at I F = 5 A
NTSBCTG, NTSJCTG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low V F =.3 V at I F = Features Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and
NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
MC74VHC132. Quad 2 Input NAND Schmitt Trigger
MC74HC32 Quad 2 Input NAND Schmitt Trigger The MC74HC32 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent
NCS1002A. Constant Voltage / Constant Current Secondary Side Controller
NCS00A Constant Voltage / Constant Current Secondary Side Controller Description The NCS00A is a performance upgrade from the NCS00 focused on reducing power consumption in applications that require more
MC74VHC1G00. Single 2-Input NAND Gate
MC74CG00 Single 2-Input NND Gate The MC74CG00 is an advanced high speed CMOS 2 input NND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including
NTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)
NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications
74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs
74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs Features 5V tolerant inputs 2.3V 3.6V V CC specifications provided 5.5ns t PD max. (V CC = 3.3V), 10µA I CC max. Power down high impedance
MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.
LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage
74HC244 Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver
Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver High Performance Silicon Gate CMOS The is identical in pinout to the LS244. The device inputs are compatible with standard CMOS outputs; with
NL27WZ00. Dual 2-Input NAND Gate. The NL27WZ00 is a high performance dual 2 input NAND Gate operating from a 1.65 V to 5.5 V supply.
Dual 2-Input NAND Gate The N27WZ00 is a high performance dual 2 input NAND Gate operating from a.65 to 5.5 supply. Features Extremely igh Speed: t PD ns (typical) at = 5.0 Designed for.65 to 5.5 Operation
NL27WZ00. Dual 2 Input NAND Gate L1 D
Dual 2 Input NAND Gate The N27WZ00 is a high performance dual 2 input NAND Gate operating from a to 5.5 supply. Extremely igh Speed: t PD 2.4 ns (typical) at CC = 5 Designed for to 5.5 CC Operation Over
2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
NL27WZ14. Dual Schmitt-Trigger Inverter
N7WZ Dual Schmitt-Trigger Inverter The N7WZ is a high performance dual inverter with Schmitt Trigger inputs operating from a.5 to supply. Pin configuration and function are the same as the N7WZ0, but the
SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY
Quad 2 Input Schmitt Trigger NAND Gate The SN74LS32 contains four 2-Input NAND Gates which accept standard TTL input signals and provide standard TTL output levels. They are capable of transforming slowly
2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT
NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for
SN74LS125A, SN74LS126A. Quad 3 State Buffers LOW POWER SCHOTTKY. LS125A LS126A TRUTH TABLES ORDERING INFORMATION
Quad 3 State Buffers V CC E D O E D O 4 3 2 0 9 8 LOW POWER SCHOTTKY 2 3 4 5 6 E D O E D O LS25A GND V CC E D O E D O 4 3 2 0 9 8 4 PLASTIC N SUFFIX CASE 646 LS25A INPUTS 2 3 4 5 6 E D O E LS26A D O GND
NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)
NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460
4, 4, 41, 42, 44, 46 42 and 46 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling
FFSB1265A. Silicon Carbide Schottky Diode 650 V, 12 A
FFSB165 Silicon Carbide Schottky Diode 65 V, 1 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared
NB3N2304NZ. 3.3V 1:4 Clock Fanout Buffer
3.3V 1:4 lock Fanout Buffer Description The NB3N2304NZ is a low skew 1 to 4 clock fanout buffer, designed for high speed clock distribution such as in PI X applications. The NB3N2304NZ guarantees low output
NTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A
NTMFDCN PowerPhase, Dual N-Channel SOFL V, High Side A / Low Side 9 A Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power
LOW POWER SCHOTTKY. ESD > 3500 Volts. GUARANTEED OPERATING RANGES ORDERING INFORMATION V CC 8 7 GND
ESD > 3500 Volts V CC 8 4 3 2 0 9 LOW POWER SCHOTTKY 2 3 4 5 6 7 GND GUARANTEED OPERATING RANGES Symbol Parameter Min Typ Max Unit V CC Supply Voltage 4.75 5.0 5.25 V T A Operating Ambient Temperature
NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit
NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit
NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
NGTB30N65IHL2WG IGBT. 30 A, 650 V V CEsat = 1.6 V E off = 0.2 mj
NGTB3N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications,
MC74LVX32. Quad 2-Input OR Gate. With 5 V Tolerant Inputs
MC4X32 Quad 2-Input OR Gate With 5 Tolerant Inputs The MC4X32 is an advanced high speed CMOS 2 input OR gate. The inputs tolerate voltages up to.0, allowing the interface of 5.0 systems to 3.0 systems.
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes
MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-
MC74LVX00. Quad 2-Input NAND Gate. With 5 V Tolerant Inputs
M74X00 Quad 2-Input NND Gate With 5 Tolerant Inputs The M74X00 is an advanced high speed MOS 2 input NND gate. The inputs tolerate voltages up to 7.0, allowing the interface of 5.0 systems to systems.
74FST Bit, 4 Port Bus Exchange Switch
4 Bit, 4 Port Bus Exchange Switch The ON Semiconductor 74FST3400 is a 4 bit, 4 port bus exchange switch. The device is CMOS TTL compatible when operating between 4.0 and 5.5 Volts. The device exhibits
74HCT32. Quad 2 Input OR Gate with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
Quad 2 Input OR Gate with STT Compatible Inputs igh Performance Silicon Gate CMOS The 74CT32 is identical in pinout to the S32. The device has TT compatible inputs. Features Output Drive Capability: 0