MC74VHC1G05. Single Inverter with Open Drain Output
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1 Single Inverter with Open Drain Output The is an advanced high speed MOS inverter with open drain output fabricated with silicon gate MOS technology. The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching level. This allows the to be used to interface circuits to circuits of any voltage between and 7 using an external resistor and power supply. The input structure provides protection when voltages up to 7 are applied, regardless of the supply voltage. Features High Speed: t PD = 3.8 ns (Typ) at = Low Internal Power Dissipation: I = (Max) at T = 2 Power Down Protection Provided on Inputs Pin and Function ompatible with Other Standard Logic Families hip omplexity: FET = 0 Pb Free Packages are vailable S 88 / SOT 33 / S 70 DF SUFFIX SE 9 TSOP / SOT 23 / S 9 DT SUFFIX SE 83 MRKING DIGRMS M F M F M N OT F = Device ode M = Date ode* = Pb Free Package (Note: Microdot may be in either location) *Date ode orientation and/or position may vary depending upon manufacturing location. IN 2 PIN SSIGNMENT GND 3 OUT Y N 2 IN Figure. Pinout (Top iew) 3 GND OUT Y FUNTION TBLE IN OUT Y Input Y Output Figure 2. Logic Symbol L H Z L ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor omponents Industries, LL, 2007 February, 2007 Rev. Publication Order Number: /D
2 MXIMUM RTINGS Symbol haracteristics alue Unit D Supply oltage 0. to +7.0 IN D Input oltage 0. to +7.0 OUT D Output oltage 0. to 7.0 I IK Input Diode urrent 20 m I OK Output Diode urrent OUT < GND; OUT > +20 m I OUT D Output urrent, per Pin +2 m I D Supply urrent, and GND +0 m T STG Storage Temperature Range 6 to 0 T L Lead Temperature, mm from ase for 0 Seconds 260 T J Junction Temperature Under Bias 0 J Thermal Resistance S70 /S 88/SOT 33 (Note ) SOT23 /TSOP /S9 P D Power Dissipation in Still ir at 8 S70 /S 88/SOT 33 SOT23 /TSOP /S /W mw MSL Moisture Sensitivity Level F R Flammability Rating Oxygen Index: 28 to 3 UL in ESD ESD Withstand oltage Human Body Model (Note 2) Machine Model (Note 3) harged Device Model (Note ) N/ I LTHUP Latchup Performance bove and Below GND at 2 (Note ) 00 m Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating onditions is not implied. Extended exposure to stresses above the Recommended Operating onditions may affect device reliability.. Measured with minimum pad spacing on an FR board, using 0 mm by inch, 2 ounce copper trace with no air flow. 2. Tested to EI/JESD Tested to EI/JESD22.. Tested to JESD Tested to EI/JESD78. REOMMENDED OPERTING ONDITIONS Symbol haracteristics Min Max Unit D Supply oltage 2.0. IN D Input oltage 0.0. OUT D Output oltage T Operating Temperature Range +2 t r, t f Input Rise and Fall Time = 3.3 ± 0.3 =.0 ± ns/ DEIE JUNTION TEMPERTURE ERSUS TIME TO 0.% BOND FILURES Junction Temperature Time, Hours Time, Years 80,032, , , , , , ,900.0 NORMLIZED FILURE RTE FILURE RTE OF PLSTI = ERMI UNTIL INTERMETLLIS OUR T J = 30 T J = 20 T J = 0 T J = TIME, YERS Figure 3. Failure Rate vs. Time Junction Temperature T J = 90 T J = 80 2
3 D ELETRIL HRTERISTIS T = 2 T 8 T 2 Symbol Parameter Test onditions () Min Typ Max Min Max Min Max Unit IH IL OL I LKG I IN Minimum High Level Input oltage Maximum Low Level Input oltage Maximum Low Level Output oltage IN = IH or IL Z State Output Leakage urrent Maximum Input Leakage urrent IN = IH I OL = 0 IN = IH I OL = m I OL = 8 m IN = IL OUT = or GND IN =. or GND to. ±0. ±.0 ±.0 I Maximum Quiescent Supply urrent IN = or GND I OFF Power Off Output Leakage urrent OUT =. IN = Î ELETRIL HRTERISTIS Input t r = t f = ns Î T = 2 Î T 8 T 2 Symbol Parameter Test onditions Î Min Typ Max Î Min Î Max Î Min Max Unit t PZL Maximum Output = 3.3 ± 0.3 L = pf Î Enable Time, R L = R I = 00 L = 0 pf Î Î Î ns Input to Y =.0 ± 0. L = pf R L = R I = 00 L 3.8.Î = 0 pf t PLZ Î Maximum Output = 3.3 ± 0.3 L Î = 0 pf Î Disable Time R L = R I = 00 Î Î Î Î Î 2.0Î Î. ns =.0 ± 0. L = 0 pf.3 7.Î R L = R I = 00 Î IN Maximum Input 0 Î Î 0 0 Î pf apacitance 2, =.0 PD Power Dissipation apacitance (Note 6) 8 pf 6. PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. verage operating current can be obtained by the equation: I (OPR) = PD f in + I. PD is used to determine the no load dynamic power consumption; P D = PD 2 f in + I. 3
4 OT 7 R L Y 0% t PZL 0% t PLZ GND OL +0.3 HIGH IMPEDNE Figure. Output oltage Mismatch pplication Figure. Switching Waveforms PULSE GENERTOR DUT R x 2 R T L R L L = 0 pf equivalent (Includes jig and probe capacitance) R L = R = 00 or equivalent R T = Z OUT of pulse generator (typically 0 ) Figure 6. Test ircuit M7HG0 B 2.2 k M7HG03. D R 2 LED 3.3 F = ( B) + (+D) + E E GTL Figure 7. omplex Boolean Functions Figure 8. LED Driver Figure 9. GTL Driver ORDERING INFORMTION DFT DFTG Device Package Shipping S70 / S 88 / SOT 33 S70 / S 88 / SOT 33 (Pb Free) DFT2 DFT2G S70 / S 88 / SOT 33 S70 / S 88 / SOT 33 (Pb Free) 3000/Tape & Reel DTT DTTG SOT23 / TSSOP / S9 SOT23 / TSSOP / S9 (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D.
5 PKGE DIMENSIONS S 88, SOT 33, S 70 SE 9 02 ISSUE J S G B 2 3 D PL 0.2 (0.008) M B M N NOTES:. DIMENSIONING ND TOLERNING PER NSI Y.M, ONTROLLING DIMENSION: INH OBSOLETE. NEW STNDRD DIMENSIONS ND B DO NOT INLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. INHES MILLIMETERS DIM MIN MX MIN MX B D G BS 0.6 BS H J K N REF 0.20 REF S J H K SOLDERING FOOTPRINT* SLE 20: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
6 PKGE DIMENSIONS TSOP SE ISSUE F 2X 2X NOTE 0.0 T 0.20 T L H G B D X 0.20 B T S SETING PLNE J K DETIL Z M DETIL Z NOTES:. DIMENSIONING ND TOLERNING PER SME Y.M, ONTROLLING DIMENSION: MILLIMETERS. 3. MXIMUM LED THIKNESS INLUDES LED FINISH THIKNESS. MINIMUM LED THIKNESS IS THE MINIMUM THIKNESS OF BSE MTERIL.. DIMENSIONS ND B DO NOT INLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS.. OPTIONL ONSTRUTION: N DDITIONL TRIMMED LED IS LLOWED IN THIS LOTION. TRIMMED LED NOT TO EXTEND MORE THN 0.2 FROM BODY. MILLIMETERS DIM MIN MX 0 BS B.0 BS D G 0.9 BS H J K L.2. M 0 0 S SOLDERING FOOTPRINT* SLE 0: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLITION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 63, Denver, olorado 8027 US Phone: or Toll Free US/anada Fax: or Toll Free US/anada orderlit@onsemi.com N. merican Technical Support: Toll Free US/anada Europe, Middle East and frica Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative /D
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NTD4965N. Power MOSFET. 30 V, 68 A, Single N Channel, DPAK/IPAK
NTD96N Power MOSFET V, 68, Single N hannel, DPK/IPK Features Low R DS(on) to Minimize onduction Losses Low apacitance to Minimize Driver Losses Optimized Gate harge to Minimize Switching Losses Three Package
MC74HC139A. Dual 1 of 4 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
MC74HC39A Dual of 4 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The MC74HC39A is identical in pinout to the LS39. The device inputs are compatible with standard CMOS outputs; with pull up
2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.
LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage
MC74LV594A. 8-Bit Shift Register with Output Register
8-Bit Shift Register with Output Register The MC74LV594A is an 8 bit shift register designed for 2 V to 6.0 V V CC operation. The device contain an 8 bit serial in, parallel out shift register that feeds
BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
MC74LCX74. Low-Voltage CMOS Dual D-Type Flip-Flop. With 5 V Tolerant Inputs
Low-oltage CMOS Dual D-Type Flip-Flop With 5 Tolerant Inputs The MC74LCX74 is a high performance, dual D type flip flop with asynchronous clear and set inputs and complementary (O, O) outputs. It operates
MC74LVX32. Quad 2-Input OR Gate. With 5 V Tolerant Inputs
MC4X32 Quad 2-Input OR Gate With 5 Tolerant Inputs The MC4X32 is an advanced high speed CMOS 2 input OR gate. The inputs tolerate voltages up to.0, allowing the interface of 5.0 systems to 3.0 systems.
74HCT32. Quad 2 Input OR Gate with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
Quad 2 Input OR Gate with STT Compatible Inputs igh Performance Silicon Gate CMOS The 74CT32 is identical in pinout to the S32. The device has TT compatible inputs. Features Output Drive Capability: 0
74HC00. Quad 2-Input NAND Gate. High-Performance Silicon-Gate CMOS
74C00 Quad 2-Input NAND Gate igh-performance Silicon-Gate CMOS The 74C00 is identical in pinout to the S00. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are
MMBT2369A NPN Switching Transistor
MMBT69A NPN Switching Transistor Description This device is designed for high speed saturated switching at collector currents of ma to ma. Sourced from process. SOT-. Base. Emitter. ollector MMBT69A NPN
NTD4965N. Power MOSFET. 30 V, 68 A, Single N Channel, DPAK/IPAK
NTD96N Power MOSFET V, 68, Single N hannel, DPK/IPK Features Low R DS(on) to Minimize onduction Losses Low apacitance to Minimize Driver Losses Optimized Gate harge to Minimize Switching Losses Three Package
NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)
NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter
MC74AC259, MC74ACT Bit Addressable Latch
8-Bit Addressable Latch The MC259/T259 is a high speed 8 bit addressable latch designed for general purpose storage applicatio in digital systems. It is a multifunctional device capable of storing single
NTD4963N. Power MOSFET 30 V, 44 A, Single N Channel, DPAK/IPAK
NTD96N Power MOSFET V,, Single N hannel, DPK/IPK Features Low R DS(on) to Minimize onduction Losses Low apacitance to Minimize Driver Losses Optimized Gate harge to Minimize Switching Losses Three Package
MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY
Quad 2 Input Schmitt Trigger NAND Gate The SN74LS32 contains four 2-Input NAND Gates which accept standard TTL input signals and provide standard TTL output levels. They are capable of transforming slowly
74AC00, 74ACT00 Quad 2-Input NAND Gate
74AC00, 74ACT00 Quad 2-Input NAND Gate Features I CC reduced by 50% Outputs source/sink 24mA ACT00 has TTL-compatible inputs Ordering Information Order Number Package Number General Description The AC00/ACT00
MC74VHC1G08. Single 2-Input AND Gate
Single 2-Input AND Gate The is an advanced high speed CMOS 2 input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output
NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
MC74AC138, MC74ACT of 8 Decoder/Demultiplexer
1 of 8 Decoder/Demultiplexer The MC74AC138/74ACT138 is a high speed 1 of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple
BC846ALT1 Series. General Purpose Transistors. NPN Silicon
BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages
74FST Bit, 4 Port Bus Exchange Switch
4 Bit, 4 Port Bus Exchange Switch The ON Semiconductor 74FST3400 is a 4 bit, 4 port bus exchange switch. The device is CMOS TTL compatible when operating between 4.0 and 5.5 Volts. The device exhibits
NL17SZ125. Non-Inverting 3-State Buffer. The NL17SZ125 is a high performance non inverting buffer operating from a 1.65 V to 5.5 V supply.
Non-Inverting 3-State Buffer The N7SZ is a high performance non inverting buffer operating from a.6 to. supply. Features Extremely High Speed: t PD.6 ns (typical) at =.0 Designed for.6 to. Operation Overvoltage
MC10E171, MC100E171. 5VНECL 3-Bit 4:1 Multiplexer
5VНECL 3-Bit 4:1 Multiplexer Description The MC10E/100E171 contains three 4:1 multiplexers with differential outputs. Separate Select controls are provided for the leading pairs (see logic symbol). The
LMV321, LMV358, LMV324. Single, Dual, Quad Low-Voltage, Rail-to-Rail Operational Amplifiers
LMV32, LMV38, LMV324 Single, Dual, Quad Low-Voltage, Rail-to-Rail Operational mplifiers The LMV32, LMV38, and LMV324 are MOS single, dual, and quad low voltage operational amplifiers with rail to rail
74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs
74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs Features 5V tolerant inputs 2.3V 3.6V V CC specifications provided 5.5ns t PD max. (V CC = 3.3V), 10µA I CC max. Power down high impedance