NTD4963N. Power MOSFET 30 V, 44 A, Single N Channel, DPAK/IPAK
|
|
- Audra Bradford
- 5 years ago
- Views:
Transcription
1 NTD96N Power MOSFET V,, Single N hannel, DPK/IPK Features Low R DS(on) to Minimize onduction Losses Low apacitance to Minimize Driver Losses Optimized Gate harge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb Free, alogen Free/BFR Free and are RoS ompliant pplications PU Power Delivery D D onverters Recommended for igh Side (ontrol) V (BR)DSS R DS(ON) MX I D MX 9.6 V V 6 V D MXIMUM RTINGS ( unless otherwise stated) Parameter Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS ± V ontinuous Drain T = I D. urrent R J (Note ) T = 8 7. Power Dissipation R J (Note ) ontinuous Drain urrent R J (Note ) Power Dissipation R J (Note ) ontinuous Drain urrent R J (Note ) Power Dissipation R J (Note ) Pulsed Drain urrent Steady State T = P D.6 W T = ID 8. T = 8.8 T = P D. W T = I D T = 8 T = P D.7 W t p = s T = I DM urrent Limited by Package T = I DmaxPkg Operating Junction and Storage T J, to Temperature T STG +7 Source urrent (Body Diode) I S Drain to Source dv/dt dv/dt 6. V/ns Single Pulse Drain to Source valanche Energy (, V DD = V, V GS = V, I L = 6 pk, L =. m, R G = Lead Temperature for Soldering Purposes (/8 from case for s) ES.8 mj T L 6 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating onditions is not implied. Extended exposure to stresses above the Recommended Operating onditions may affect device reliability.. Surface mounted on FR board using sq in pad, oz u.. Surface mounted on FR board using the minimum recommended pad size. Drain YWW 9 6NG G S N NNEL MOSFET SE 69 DPK (Bent Lead) STYLE MRKING DIGRMS & PIN SSIGNMENTS Drain YWW 9 6NG SE 69D IPK (Straight Lead DPK) Drain YWW 9 6NG Drain Gate Source Gate Drain Source Gate Drain Source = ssembly Location (R, NF = ON Semi, Nantong Fujitsu ssembly Site ode) Y = Year WW = Work Week 96N = Device ode G = Pb Free Package SE 69 IPK (Straight Lead) ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor omponents Industries, LL, ugust, Rev. Publication Order Number: NTD96N/D
2 NTD96N TERML RESISTNE MXIMUM RTINGS Parameter Symbol Value Unit Junction to ase (Drain) R J. /W Junction to TB (Drain) R J TB. Junction to mbient Steady State (Note ) R J 77 Junction to mbient Steady State (Note ) R J 8. Surface mounted on FR board using sq in pad, oz u.. Surface mounted on FR board using the minimum recommended pad size. ELETRIL RTERISTIS ( unless otherwise specified) Parameter Symbol Test ondition Min Typ Max Unit OFF RTERISTIS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = V Drain to Source Breakdown Voltage Temperature oefficient V (BR)DSS / T J mv/ Zero Gate Voltage Drain urrent I DSS V GS = V, V DS = V. T J = Gate to Source Leakage urrent I GSS V DS = V, V GS = ± V ± n ON RTERISTIS (Note ) Gate Threshold Voltage V GS(T) V GS = V DS, I D =.. V Negative Threshold Temperature oefficient V GS(T) /T J Drain to Source On Resistance R DS(on) V GS = V I D = I D = 8. V GS =. V I D =.6 6 I D =.6 Forward Transconductance g FS V DS =. V, I D = S RGES, PITNES ND GTE RESISTNE Input apacitance ISS Output apacitance OSS V GS = V, f =. Mz, V DS = V Reverse Transfer apacitance RSS Total Gate harge Q G(TOT) 8. Threshold Gate harge Q G(T). Gate to Source harge Q GS V GS =. V, V DS = V, I D =. Gate to Drain harge Q GD. Total Gate harge Q G(TOT) V GS = V, V DS = V, I D = 6. n SWITING RTERISTIS (Note 6) Turn On Delay Time t d(on) Rise Time t r V GS =. V, V DS = V, Turn Off Delay Time t d(off) I D =, R G =. Fall Time t f. Pulse Test: pulse width s, duty cycle %. 6. Switching characteristics are independent of operating junction temperatures. 7. ssume terminal length of mils. mv/ m pf n ns
3 NTD96N ELETRIL RTERISTIS ( unless otherwise specified) Parameter Symbol Test ondition Min Typ Max Unit SWITING RTERISTIS (Note 6) Turn On Delay Time t d(on) 7. Rise Time t r V GS =. V, V DS = V, 7 Turn Off Delay Time t d(off) I D =, R G =. ns Fall Time t f DRIN SOURE DIODE RTERISTIS Forward Diode Voltage V SD VGS = V,.96. I S = T J =.8 V Reverse Recovery Time t RR 7 harge Time t a V GS = V, dis/dt = / s, 9 ns Discharge Time t b I S = 8 Reverse Recovery harge Q RR 6 n PKGE PRSITI VLUES Source Inductance (Note 7) L S.9 n Drain Inductance, DPK L D.6 Drain Inductance, IPK (Note 7) L D T =.88 Gate Inductance (Note 7) L G.6 Gate Resistance R G.. Pulse Test: pulse width s, duty cycle %. 6. Switching characteristics are independent of operating junction temperatures. 7. ssume terminal length of mils. ORDERING INFORMTION NTD96NTG Device Package Shipping DPK (Pb Free) / Tape & Reel NTD96N G IPK (Pb Free) 7 Units / Rail NTD96N G IPK Trimmed Lead (Pb Free) 7 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.
4 NTD96N TYPIL PERFORMNE URVES I D, DRIN URRENT () V thru V V GS =. V. V.8 V. V DS, DRIN TO SOURE VOLTGE (V) Figure. On Region haracteristics. V. V.8 V.6 V. V I D, DRIN URRENT () V DS = V T J = T J =.... V GS, GTE TO SOURE VOLTGE (V) Figure. Transfer haracteristics R DS(on), DRIN TO SOURE RESISTNE ( ) R DS(on), DRIN TO SOURE RESISTNE (NORMLIZED) E.9E.8E.7E.6E.E.E.E.E.E.E 9E 8E 7E 6E E E V GS, GTE TO SOURE VOLTGE (V) Figure. On Resistance vs. Gate to Source Voltage I D = V GS = V.6 7 T J, JUNTION TEMPERTURE ( ) I D = Figure. On Resistance Variation with Temperature R DS(on), DRIN TO SOURE RESISTNE ( ) I DSS, LEKGE (n) E E E E,,. V GS =. V V GS = V I D, DRIN URRENT () Figure. On Resistance vs. Drain urrent and Gate Voltage V GS = V T J = T J = V DS, DRIN TO SOURE VOLTGE (V) Figure 6. Drain to Source Leakage urrent vs. Voltage
5 NTD96N TYPIL PERFORMNE URVES, PITNE (pf) iss V GS = V 8 6 oss rss V DS, DRIN TO SOURE VOLTGE (V) Figure 7. apacitance Variation V GS, GTE TO SOURE VOLTGE (V) Q gs Q gd Q T I D = V DD = V V GS = Q G, TOTL GTE RGE (n) Figure 8. Gate to Source and Drain to Source Voltage vs. Total harge 8 t, TIME (ns) V DD = V I D = V GS =. V t d(on) t d(off) t f R G, GTE RESISTNE ( ) t r IS, SOURE URRENT (). V GS = V V SD, SOURE TO DRIN VOLTGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure. Diode Forward Voltage vs. urrent ID, DRIN URRENT () V GS = V Single Pulse T = s s ms ms. RDS(on) LIMIT TERML LIMIT dc PKGE LIMIT.. V DS, DRIN TO SOURE VOLTGE (V) E S, SINGLE PULSE DRIN TO SOURE VLNE ENERGY (mj) I D = 6 7 T J, STRTING JUNTION TEMPERTURE ( ) Figure. Maximum Rated Forward Biased Safe Operating rea Figure. Maximum valanche Energy vs. Starting Junction Temperature
6 NTD96N PKGE DIMENSIONS DPK (SINGLE GUGE) SE 69 ISSUE B L L b e E b b D B DETIL c. (.) M c L GUGE PLNE L L DETIL ROTTED 9 W Z SETING PLNE NOTES:. DIMENSIONING ND TOLERNING PER SME Y.M, 99.. ONTROLLING DIMENSION: INES.. TERML PD ONTOUR OPTIONL WITIN DI- MENSIONS b, L and Z.. DIMENSIONS D ND E DO NOT INLUDE MOLD FLS, PROTRUSIONS, OR BURRS. MOLD FLS, PROTRUSIONS, OR GTE BURRS SLL NOT EXEED.6 INES PER SIDE.. DIMENSIONS D ND E RE DETERMINED T TE OUTERMOST EXTREMES OF TE PLSTI BODY. 6. DTUMS ND B RE DETERMINED T DTUM PLNE. INES MILLIMETERS DIM MIN MX MIN MX b b b c c D E e.9 BS.9 BS L L.8 REF.7 REF L. BS. BS L L.. Z..9 SOLDERING FOOTPRINT* STYLE : PIN. GTE. DRIN. SOURE. DRIN SLE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6
7 NTD96N PKGE DIMENSIONS V B R IPK, STRIGT LED SE 69 ISSUE O E NOTES:.. DIMENSIONING ND TOLERNING PER NSI Y.M, ONTROLLING DIMENSION: IN.. SETING PLNE IS ON TOP OF DMBR POSITION.. DIMENSION DOES NOT INLUDE DMBR POSITION OR MOLD GTE. SETING PLNE W F G K J D PL. (.) W INES MILLIMETERS DIM MIN MX MIN MX B D E F G.9 BS.9 BS J K....6 R V W.... V B R IPK (STRIGT LED DPK) SE 69D ISSUE B E NOTES:. DIMENSIONING ND TOLERNING PER NSI Y.M, 98.. ONTROLLING DIMENSION: IN. S T SETING PLNE F G K D PL J. (.) M T Z INES MILLIMETERS DIM MIN MX MIN MX B D E F G.9 BS.9 BS J K R.8... S...6. V Z..9 STYLE : PIN. GTE. DRIN. SOURE. DRIN ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLITION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 6, Denver, olorado 87 US Phone: 67 7 or 8 86 Toll Free US/anada Fax: or Toll Free US/anada orderlit@onsemi.com N. merican Technical Support: Toll Free US/anada Europe, Middle East and frica Technical Support: Phone: 79 9 Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTD96N/D
NTD4965N. Power MOSFET. 30 V, 68 A, Single N Channel, DPAK/IPAK
NTD96N Power MOSFET V, 68, Single N hannel, DPK/IPK Features Low R DS(on) to Minimize onduction Losses Low apacitance to Minimize Driver Losses Optimized Gate harge to Minimize Switching Losses Three Package
More informationNTD4965N. Power MOSFET. 30 V, 68 A, Single N Channel, DPAK/IPAK
NTD96N Power MOSFET V, 68, Single N hannel, DPK/IPK Features Low R DS(on) to Minimize onduction Losses Low apacitance to Minimize Driver Losses Optimized Gate harge to Minimize Switching Losses Three Package
More informationT95N02R. Power MOSFET 95 Amps, 24 Volts. N Channel DPAK
NTD95NR Power MOSFET 95 mps, Volts N Channel DPK Features High Power and Current Handling Capability Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low Gate Charge to Minimize Switching
More informationNTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88
NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class
More informationNTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)
NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
More informationNDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
More informationNTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m
NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
More informationNTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)
NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications
More informationNTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A
NTMFDCN PowerPhase, Dual N-Channel SOFL V, High Side A / Low Side 9 A Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power
More informationNTD14N03R, NVD14N03R. Power MOSFET 14 Amps, 25 Volts. N Channel DPAK. 14 AMPERES, 25 VOLTS R DS(on) = 70.4 m (Typ)
NTDNR, NVDNR Power MOSFET mps, 5 Volts NChannel DPK Features Planar HDe Process for Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low C iss to Minimize Driver Loss Low Gate Charge
More informationNTGS3446. Power MOSFET 20 V, 5.1 A Single N Channel, TSOP6 Features
Power MOSFET V,. Single NChannel, TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery valanche Energy Specified SS
More informationNTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL
NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized
More informationBAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol
More informationMBR2045MFST3G NRVB2045MFST3G* Switch Mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS
MBR04MFS, NRVB04MFS Switch Mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides apability of Inspection and Probe
More informationBSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
More informationNTB45N06L, NTBV45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m
Power MOSFET 5 Amps, 6 Volts Logic Level, NChannel D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTMFS4935N. Power MOSFET 30 V, 93 A, Single N Channel, SO 8 FL Features
Power MOSFET 3 V, 93, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These evices
More informationNTF5P03T3. P Channel SOT AMPERES, 30 VOLTS R DS(on) = 100 m
NTF5PT Preferred Device Power MOSFET 5. mps, Volts PChannel SOT Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT Surface Mount Package valanche
More informationNB3N2304NZ. 3.3V 1:4 Clock Fanout Buffer
3.3V 1:4 lock Fanout Buffer Description The NB3N2304NZ is a low skew 1 to 4 clock fanout buffer, designed for high speed clock distribution such as in PI X applications. The NB3N2304NZ guarantees low output
More informationNTQD6866R2G. Power MOSFET 6.9 Amps, 20 Volts N Channel TSSOP 8 Features. 6.9 AMPERES 20 VOLTS 30 V GS = 4.5 V
Power MOSFET.9 Amps, Volts NChannel TSSOP Features New Low Profile TSSOP Package Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery
More informationMMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.
LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage
More information2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More informationMMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control
More informationNTS1045MFST3G NRVTS1045MFST3G. Exceptionally Low Forward Voltage Trench-based Schottky Rectifier SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 45 VOLTS
NTS4MFS, NRVTS4MFS Exceptionally Low Forward Voltage Trench-based Schottky Rectifier Features Fine Lithography Trench based Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching
More informationMC74VHC1G05. Single Inverter with Open Drain Output
Single Inverter with Open Drain Output The is an advanced high speed MOS inverter with open drain output fabricated with silicon gate MOS technology. The internal circuit is composed of three stages, including
More informationNTP45N06L, NTB45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel TO 220 and D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m
NTP5N6L, NTB5N6L Power MOSFET 5 Amps, 6 Volts Logic Level, NChannel TO and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge
More informationNTS12120MFST3G NRVTS12120MFST3G. Very Low Forward Voltage Trench-based Schottky Rectifier TRENCH SCHOTTKY RECTIFIERS 12 AMPERES 120 VOLTS
NTSMFS, NRVTSMFS Very Low Forward Voltage Trench-based Schottky Rectifier Features Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching with Exceptional
More informationNTD32N06L. Power MOSFET 32 Amps, 60 Volts. Logic Level, N-Channel DPAK
NTDN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTMD6P02R2SG. Power MOSFET 6 Amps, 20 Volts. P Channel SOIC 8, Dual Features 6 AMPERES, 20 VOLTS
NTMD6P2R2 Preferred Device Power MOSFET 6 mps, 2 Volts PChannel SOIC, Dual Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC Surface Mount
More informationV N (8) V N (7) V N (6) GND (5)
4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More informationNGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
More informationNGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
More informationNTMD3P03, NVMD3P03 Power MOSFET Amps, -30 Volts Dual P Channel SOIC 8 Features
NTMDP, NVMDP Power MOSFET -. mps, - Volts Dual PChannel SOIC Features High Efficiency Components in a Dual SOIC Package High Density Power MOSFET with Low R DS(on) Miniature SOIC Surface Mount Package
More informationonlinecomponents.com
MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More informationMC74LVX00. Quad 2-Input NAND Gate. With 5 V Tolerant Inputs
M74X00 Quad 2-Input NND Gate With 5 Tolerant Inputs The M74X00 is an advanced high speed MOS 2 input NND gate. The inputs tolerate voltages up to 7.0, allowing the interface of 5.0 systems to systems.
More informationNGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationNTMS5P02R2G. Power MOSFET 5.4 Amps, 20 Volts. P Channel Enhancement Mode Single SOIC 8 Package
NTMS5PR Power MOSFET 5. mps, Volts PChannel EnhancementMode Single SOIC Package Features High Density Power MOSFET with Ultra Low R DS(on) Providing Higher Efficiency Miniature SOIC Surface Mount Package
More informationMUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS
MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features
More informationNGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationMMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon
MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
More informationNTB25P06, NVB25P06. Power MOSFET. 60 V, 27.5 A, P Channel D 2 PAK
NTB25P6, NB25P6 Power OSFET 6, 27.5 A, PChannel D 2 PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features AEC Q Qualified
More informationNLSV2T Bit Dual-Supply Non-Inverting Level Translator
2-Bit Dual-Supply Non-Inverting Level Translator The NLSV2T2 is a 2 bit configurable dual supply voltage level translator. The input n and output B n ports are designed to track two different power supply
More information2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
More informationMUR405, MUR410, MUR415, MUR420, MUR440, MUR460
4, 4, 41, 42, 44, 46 42 and 46 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling
More informationNL17SH02. Single 2-Input NOR Gate
N7S0 Single -Input NOR Gate The N7S0 MiniGate is an advanced high speed CMOS input NOR gate in ultra small footprint. The N7S0 input structures provide protection when voltages up to 7.0 are applied, regardless
More information1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS
PMT90B Series. Watt Plastic Surface Mount POWERMITE Package This complete new line of. Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat
More informationNGD8201N, NGD8201AN. Ignition IGBT. 20 A, 400 V, N Channel DPAK. 20 A, 400 V V CE(on) = 1.3 I C = 10 A, V GE 4.5 V
NGD2N, NGD2AN Ignition IGBT 2 A, 4 V, N hannel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in
More information2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
More informationBC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
More informationNL17SZ16. Single Input Buffer
NL7SZ6 Single Input Buffer The NL7SZ6 is a single input Buffer in two tiny footprint packages. The device performs much as LCX multi gate products in speed and drive. Features Tiny SOT 33 and SOT 3 Packages
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage
More informationMJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
More informationNGD8205N, NGD8205AN. Ignition IGBT. 20 Amp, 350 Volt, N Channel DPAK. 20 A, 350 V V CE(on) = 1.3 I C = 10 A, V GE 4.5 V
NGD25N, NGD25AN Ignition IGBT 2 Amp, 35 Volt, N hannel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More informationNL17SZ08. Single 2-Input AND Gate
N7SZ08 Single 2-Input AND Gate The N7SZ08 is a single 2 input AND Gate in two tiny footprint packages. The device performs much as CX multi gate products in speed and drive. They should be used wherever
More informationNLSV2T Bit Dual-Supply Inverting Level Translator
2-Bit Dual-Supply Inverting Level Translator The NLSV2T240 is a 2 bit configurable dual supply voltage level translator. The input A n and output B n ports are designed to track two different power supply
More informationMMBT2369A NPN Switching Transistor
MMBT69A NPN Switching Transistor Description This device is designed for high speed saturated switching at collector currents of ma to ma. Sourced from process. SOT-. Base. Emitter. ollector MMBT69A NPN
More informationMC100ELT23. 5 V Dual Differential PECL to TTL Translator
5 V Dual Differential PEL to TTL Translator Description The M00ELT23 is a dual differential PEL to TTL translator. Because PEL (Positive EL) levels are used, only +5 V and ground are required. The small
More informationNTMFS4119NT3G. Power MOSFET. 30 V, 30 A, Single N Channel, SO 8 Flat Lead
Power MOFET V,, ingle N Channel, O 8 Flat Lead Features Low R (on) Fast witching Times Low Inductance O 8 Package These are Pb Free evices V (BR) R (on) Typ I Max (Note ) pplications Notebooks, raphics
More informationNGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj
NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance
More informationNGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj
NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance
More informationBC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
More informationNGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj
NGTGNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More informationBC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter
More informationNTSB40200CTG, NTSJ40200CTG. Very Low Forward Voltage Trench-based Schottky Rectifier. Exceptionally Low V F = 0.53 V at I F = 5 A
NTSBCTG, NTSJCTG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low V F =.3 V at I F = Features Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and
More informationMC74VHC08. Quad 2-Input AND Gate
M7408 Quad 2-Input ND Gate The M7408 is an advanced high speed MOS 2 input ND gate fabricated with silicon gate MOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TT
More information7SB3125. Bus Switch. The 7SB3125 Bus Switch is an advanced high speed line switch in ultra small footprint.
7S32 us Switch The 7S32 us Switch is an advanced high speed line switch in ultra small footprint. Features High Speed: t PD = 0.2 ns (Max) @ V =. V 3 Switch onnection etween 2 Ports Power Down Protection
More informationMC10ELT28, MC100ELT28 5 V TTL to Differential PECL and Differential PECL to TTL Translator Description The MC10ELT/100ELT28 is a differential PECL to
5 V TTL to Differential PEL and Differential PEL to TTL Translator Description The M0ELT/00ELT2 is a differential PEL to TTL translator and a TTL to differential PEL translator in a single package. Because
More informationNCV8402, NCV8402A. Self-Protected Low Side Driver with Temperature and Current Limit
Self-Protected Low Side Driver with Temperature and urrent Limit NV82/ is a three terminal protected Low Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and
More informationNL17SG07. Buffer with Open Drain. Output Y
NL7SG07 Buffer with Open Drain Output The NL7SG07 MiniGate is an advanced high speed CMOS Buffer with Open Drain Output in ultra small footprint. The NL7SG07 input structures provides protection when voltages
More informationP2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector
More informationElerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break
FQD3P50TM-F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationNTMFS4825NFET3G. Power MOSFET 30 V, 171 A, Single N Channel, SO 8 FL
Power MOFET 3 V, 7 A, ingle N Channel, O 8 FL Features Low R (on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Includes chottky iode Optimized Gate Charge to Minimize witching
More informationNCV8402D, NCV8402AD. Dual Self-Protected Low-Side Driver with Temperature and Current Limit
Dual Self-Protected Low-Side Driver with Temperature and Current Limit NCVD/AD is a dual protected Low Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and
More informationMTD6N15T4G. Power Field Effect Transistor DPAK for Surface Mount. N Channel Enhancement Mode Silicon Gate
Power Field Effect Transistor DPAK for Surface Mount NChannel EnhancementMode Silicon Gate This Power FET is designed for high speed, low loss power switching applications such as switching regulators,
More informationBAT54XV2 Schottky Barrier Diode
June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1
More informationNGTB30N65IHL2WG IGBT. 30 A, 650 V V CEsat = 1.6 V E off = 0.2 mj
NGTB3N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications,
More information2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
More informationMBRS140T3G SBRS8140T3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS
MBRSTG, SBRS8TG Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
More informationNLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
More informationBC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
More informationNL17SHT08. 2-Input AND Gate / CMOS Logic Level Shifter
N7ST08 -Input AND Gate / CMOS ogic evel Shifter The N7ST08 is an advanced high speed CMOS input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent
More informationBC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general
More informationNLU1G00 Single 2-Input NAND Gate The NLU1G00 MiniGate is an advanced high speed CMOS 2 input NAND gate in ultra small footprint. The NLU1G00 input and
Single 2-Input NND Gate The MiniGate is an advanced high speed CMOS 2 input NND gate in ultra small footprint. The input and output structures provide protection when voltages up to 7. are applied, regardless
More informationFFSB1265A. Silicon Carbide Schottky Diode 650 V, 12 A
FFSB165 Silicon Carbide Schottky Diode 65 V, 1 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared
More informationNSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual
NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.
More informationNCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit
NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit
More informationSN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY
of 0 Decoder/Driver Open Collector The SN74LS45, -of-0 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 0-digit incandescent displays. All outputs remain off for
More informationMC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger
MC74AC32, MC74ACT32 Quad 2 Input NAND Schmitt Trigger The MC74AC/74ACT32 contains four 2 input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter free
More information74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
of 8 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The 74HC38 is identical in pinout to the LS38. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are
More informationNL27WZ08. Dual 2-Input AND Gate. The NL27WZ08 is a high performance dual 2 input AND Gate operating from a 1.65 V to 5.5 V supply.
N27WZ Dual 2-Input AND Gate The N27WZ is a high performance dual 2 input AND Gate operating from a.6 to. supply. Features Extremely igh Speed: t PD 2. ns (typical) at = Designed for.6 to. Operation Over
More informationNL17SV16. Ultra-Low Voltage Buffer
N7S6 Ultra-ow oltage Buffer The N7S6X5T is an ultra high performance single Buffer fabricated in sub micron silicon gate 0.35 m technology with excellent performance down to 0.9. This device is ideal for
More informationMMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes
MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-
More informationSN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY
Quad 2 Input Multiplexer The LSTTL/ MSI is a high speed Quad 2-Input Multiplexer. Four bits of data from two sources can be selected using the common Select and Enable inputs. The four buffered outputs
More informationI D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View
Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description
More informationNE522 High Speed Dual Differential Comparator/Sense Amp
HighSpeed DualDifferential Comparator/Sense Amp Features 5 ns Maximum Guaranteed Propagation Delay 0 A Maximum Input Bias Current TTL-Compatible Strobes and Outputs Large Common-Mode Input oltage Range
More information