NTSB40200CTG, NTSJ40200CTG. Very Low Forward Voltage Trench-based Schottky Rectifier. Exceptionally Low V F = 0.53 V at I F = 5 A

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1 NTSBCTG, NTSJCTG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low V F =.3 V at I F = Features Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for chieving Regulatory Compliance Low Thermal Resistance High Surge Capability These Devices are PbFree and Halogen Free/BFR Free Typical pplications Switching Power Supplies including Telecom C to DC Power Stages, LED Lighting and TX High Voltage DCDC Converters Freewheeling and ORing Diodes Output Rectifier in Welding Power Supplies Industrial utomation Mechanical Characteristics Case: Epoxy, Molded Epoxy Meets Flammability Rating UL in Finish: ll External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 26 C Maximum for sec VERY LOW FORWRD VOLTGE, LOW LEKGE SCHOTTKY BRRIER RECTIFIERS MPERES, VOLTS PIN CONNECTIONS TO2FP CSE 22H 2, 4 D2PK CSE 48B ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. Semiconductor Components Industries, LLC, 4 July, 4 Rev. Publication Order Number: NTSBCT/D

2 NTSBCTG, NTSJCTG MXIMUM RTINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R V verage Rectified Forward Current (Rated V R, T C = 2 C) NTSBCTG Per device (Rated V R, T C = C) NTSBCTG Per diode (Rated V R, T C = 6 C) NTSJCTG Per device (Rated V R, T C = 42 C) NTSJCTG Per diode Peak Repetitive Forward Current (Rated V R,, khz, T C = C) NTSBCTG Per device (Rated V R,, khz, T C = 2 C) NTSBCTG Per diode (Rated V R,, khz, T C = C) NTSJCTG Per device (Rated V R,, khz, T C = 2 C) NTSJCTG Per diode I F(V) I FRM 8 Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 6 Hz) I FSM 2 Operating Junction Temperature T J to + C Storage Temperature T stg to + C ESD Rating (Human Body Model) ESD Rating (Machine Model) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 M4 THERML CHRCTERISTICS Rating Symbol NTSBCTG NTSJCTG Unit Typical Thermal Resistance JunctiontoCase Per Diode JunctiontoCase Per Device R JC C/W Junctiontombient Per Device R J ELECTRICL CHRCTERISTICS Rating Symbol Typ Max Unit Instantaneous Forward Voltage (Note ) (I F =, T J = 2 C) (I F =, T J = 2 C) (I F =, T J = 2 C) (I F =, T J = 2 C) V F V (I F =, T J = 2 C) (I F =, T J = 2 C) (I F =, T J = 2 C) (I F =, T J = 2 C) Instantaneous Reverse Current (Note ) (V R = 8 V, T J = 2 C) (Rated dc Voltage, T J = 2 C) I R 3 (V R = 8 V, T J = 2 C) (Rated dc Voltage, T J = 2 C) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Pulse Test: Pulse Width = s, Duty Cycle 2.%.3 7 m m 2

3 NTSBCTG, NTSJCTG TYPICL CHRCTERISTICS i F, INSTNTNEOUS FORWRD I R, INSTNTNEOUS REVERSE T = 2 C T = C V F, INSTNTNEOUS FORWRD VOLTGE (V) Figure. Typical Instantaneous Forward Characteristics T = 2 C T = 2 C T = C T = 2 C E2.E3.E4.E.E6.E7.E8 T = C T = C.E V R, INSTNTNEOUS REVERSE VOLTGE (V) Figure 3. Typical Reverse Characteristics i F, INSTNTNEOUS FORWRD I R, INSTNTNEOUS REVERSE T = 2 C T = C E.E2.E3.E4.E.E6 V F, INSTNTNEOUS FORWRD VOLTGE (V) Figure 2. Maximum Instantaneous Forward Characteristics T = C T = 2 C T = 2 C T = C T = 2 C T = C.E V R, INSTNTNEOUS REVERSE VOLTGE (V) Figure 4. Maximum Reverse Characteristics C, JUNCTION CPCITNCE (pf) k T J = 2 C k V R, REVERSE VOLTGE (V) Figure. Typical Junction Capacitance 3

4 NTSBCTG, NTSJCTG TYPICL CHRCTERISTICS I F(V), VERGE FORWRD 3 2 DC R JC =.29 C/W I F(V), VERGE FORWRD DC R JC =.79 C/W 6 8 T C, CSE TEMPERTURE ( C) Figure 6. Current Derating per Diode (NTSBCT) 6 8 T C, CSE TEMPERTURE ( C) Figure 7. Current Derating per Device (NTSBCT) I F(V), VERGE FORWRD 3 2 DC R JC = 6.94 C/W I F(V), VERGE FORWRD DC R JC = 6. C/W 6 8 T C, CSE TEMPERTURE ( C) Figure 8. Current Derating per Diode (NTSJCTG) 6 8 T C, CSE TEMPERTURE ( C) Figure 9. Current Derating per Device (NTSJCTG) P F(V), VERGE FORWRD POWER DISSIPTION (W) 6 I PK /I V = I PK /I V = 4 I PK /I V = 3 dc 2 T J = C 2 3 I F(V), VERGE FORWRD Figure. Forward Power Dissipation 4

5 NTSBCTG, NTSJCTG TYPICL CHRCTERISTICS R(t), TYPICL TRNSIENT THERML RESISTNCE ( C/W).. % % % % 2% %.. Single Pulse.. Psi Tab... R J = C/W t, PULSE TIME (sec) Figure. Typical Transient Thermal Response per Device (NTSBCTG) R(t), TYPICL TRNSIENT THERML RESISTNCE ( C/W).. % % % % 2% % Single Pulse R JC = 6. C/W t, PULSE TIME (sec) Figure 2. Typical Transient Thermal Response per Device (NTSJCTG)

6 NTSBCTG, NTSJCTG ORDERING INFORMTION Device Package Shipping NTSBCTG NTSBCTT4G NTSJCTG (In Development) D 2 PK (PbFree) D 2 PK (PbFree) TO2FP (HalideFree) Units / Rail 8 / Tape & Reel Units / Rail MRKING DIGRMS Y WW TSCG K YWW TSCG K D 2 PK TO2FP Y WW K G = ssembly Location = Year = Work Week = Polarity Designator = PbFree Package 6

7 NTSBCTG, NTSJCTG PCKGE DIMENSIONS D 2 PK 3 CSE 48B4 ISSUE K T SETING PLNE B G S D 3 PL.3 (.) M T B M K C H E V W W J NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y4.M, CONTROLLING DIMENSION: INCH B THRU 48B3 OBSOLETE, NEW STNDRD 48B4. INCHES MILLIMETERS DIM MIN MX MIN MX B C D E F G. BSC 2.4 BSC H J K L M N.97 REF. REF P.79 REF 2. REF R.39 REF.99 REF S V VRIBLE CONFIGURTION ZONE R N U P L L L M M M F F F VIEW WW VIEW WW VIEW WW 2 3 7

8 NTSBCTG, NTSJCTG PCKGE DIMENSIONS TO2 FULLPCK, 3LED CSE 22H ISSUE D E/2 Q L 3X b2 e E 2 3 P.4 M B M D C L 3X b.2 M B M C H c B NOTE 3 2 SETING PLNE NOTES:. DIMENSIONING ND TOLERNCING PER SME Y4.M, CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS RE. 4. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH ND GTE PROTRUSIONS. MOLD FLSH ND GTE PROTRUSIONS NOT TO EXCEED.3 PER SIDE. THESE DIMENSIONS RE TO BE MESURED T OUTERMOST EXTREME OF THE PLSTIC BODY.. DIMENSION b2 DOES NOT INCLUDE DMBR PROTRUSION. LED WIDTH INCLUDING PROTRUSION SHLL NOT EXCEED 2.. MILLIMETERS DIM MIN MX b.4.84 b2.. c D 4.7. E 9.7. e 2.4 BSC H L L P Q ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Denver, Colorado 827 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTSBCT/D