LM4040, LM4041. Precision Micro-Power Shunt Voltage References
|
|
- Rodger Weaver
- 5 years ago
- Views:
Transcription
1 LM44, LM441 Precision Micro-Power Shunt Voltage References Description LM44 and LM441 are precision two terminal shunt mode voltage references offered in factory programmed reverse breakdown voltages of V, 2.5 V, 3. V, 3.3 V, 4.96 V, and 5. V. ON Semiconductor s Charge Programmable floating gate technology ensures precise voltage settings offering five grades of initial accuracy; from.1% to 2%. LM44 and LM441 operate over a shunt current range of 6 A to 15 ma with low dynamic impedance, and 1 ppm/ C temperature coefficient ensuring stable reverse breakdown voltage accuracy over a wide range of operating conditions. These shunt regulators do not require an external stabilizing capacitor but are stable with any capacitive load (up to 1 F). Offered in space saving SOT 23 and SC 7 packages LM44 and LM441 are specified for operation over the full industrial temperature range of 4 C to +85 C. Features s: V 3.3 V 2.5 V 4.96 V 3. V 5. V Accuracy Grades: A: ±.1% D: ±1.% B: ±.2% E: ±2.% C: ±.5% Operating Current: 6 A to 15 ma Low Output Noise: 35 V (1 Hz to 1 KHz) Small Package Size: SOT 23, SC 7 These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Mobile Handheld Devices Industrial Process Control Instrumentation Laptop and Desktop PCs Automotive Energy Management 1 2 SOT 23 3 Lead TB SUFFIX CASE 527AG 4x A Y M MARKING DIAGRAMS 4xYM (SOT 23) PIN CONNECTIONS 3 SC 7 5 Lead SD SUFFIX CASE 419AC = Specific Device Code = (4L = LM44, 4M = LM441) = Assembly Location Code = Production Year = Production Month = Pb Free Package 3 4 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 13 of this data sheet xA (SC 7) 5 Semiconductor Components Industries, LLC, 212 November, 212 Rev. 3 1 Publication Order Number: LM44/D
2 LM44, LM441 R S VIN LM44 LM441 Table 1. PIN DESCRIPTIONS SOT 23 Pin SC 7 Name 1 3 V+ Positive voltage 2 1 V Negative voltage Figure 1. Test Circuit Function 3 2 NC This pin must be left floating or connected to V. 4 NIC No Internal Connection. A voltage or signal applied to this pin will have no effect. 5 NIC Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Unit Reverse Current 2 ma Forward Current 1 ma Junction Temperature 15 C Power Dissipation SOT mw Power Dissipation SC mw Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. RECOMMENDED OPERATING CONDITIONS Parameter Rating Unit I REVERSE.6 15 ma Ambient Temperature Range 4 to +85 C Table 4. ESD SUSCEPTABILITY Symbol Parameter Min Units ESD Human Body Model 2 V Machine Model 2 V 2
3 LM44, LM441 Table 5. DC ELECTRICAL CHARACTERISTICS (I R = 1 A, T A = 4 C to +85 C, unless otherwise noted. Typical values are at T A = +25 C.) Symbol Parameter Test Conditions Limits Min Typ Max V T A = +25 C LM441A (.1%) V Tolerance LM441B (.2%) LM441C (.5%) LM441D (1.%) LM441E (2.%) Units LM441A ±1.2 ±9.2 mv LM441B ±2.4 ±1.4 LM441C ±6 ±14 LM441D ±12 ±24 LM441E ±25 ±36 I R_MIN Minimum Operating Current A / T / I R Temperature Coefficient Change with Operating Current I R = 1 ma ±2 ppm/ C I R = 1 ma LM441A, B, C ±15 ±1 LM441D, E ±15 ±15 I R = 1 A ±15 I R_MIN I R 1 ma 1 ma I R 15 ma Z R Reverse Dynamic Impedance I R = 1 ma, f = 12 Hz, I AC =.1 I R LM441A, B, C.7 2. mv LM441D, E LM441A, B, C LM441D, E LM441A, B LM441C LM441D, E.5 2. e N Wideband Noise I R = 1 A, 1 Hz f 1 KHz 2 MS Long Term Stability T = 1 h 12 ppm V HYST Thermal Hysteresis (Note 2) T = 4 C to +125 C.8 % 2.5 V T A = +25 C LM44A (.1%) V Tolerance LM44B (.2%) LM44C (.5%) LM44D (1.%) LM44E (2.%) LM44A ±2 ±19 mv LM44B ±4 ±21 LM44C ±1 ±29 LM44D ±25 ±49 LM44E ±5 ±74 1. Guaranteed by design. 2. Thermal hysteresis is defined as the difference in voltage measured at +25 C after cycling to temperature 4 C and the 25 C measurement after cycling to temperature +125 C. 3
4 LM44, LM441 Table 5. DC ELECTRICAL CHARACTERISTICS (I R = 1 A, T A = 4 C to +85 C, unless otherwise noted. Typical values are at T A = +25 C.) Symbol Parameter Test Conditions 2.5 V I R_MIN Minimum Operating Current A / T / I R Temperature Coefficient Change with Operating Current Min Limits Typ Max Units I R = 1 ma ±2 ppm/ C I R = 1 ma LM44A, B, C ±15 ±1 LM44D, E ±15 ±15 I R = 1 A ±15 I R_MIN I R 1 ma 1 ma I R 15 ma Z R Reverse Dynamic Impedance I R = 1 ma, f = 12 Hz, I AC =.1 I R LM44A, B, C.3 1. mv LM44D, E LM44A, B, C LM44D, E LM44A, B.3.8 LM44C.3.9 LM44D, E e N Wideband Noise I R = 1 A, 1 Hz f 1 KHz 35 MS Long Term Stability T = 1 h 12 ppm V HYST Thermal Hysteresis (Note 2) T = 4 C to +125 C.8 % 3. V T A = +25 C LM44A (.1%) V Tolerance LM44B (.2%) LM44C (.5%) LM44D (1.%) LM44E (2.%) LM44A ±3 ±22 mv LM44B ±6 ±26 LM44C ±15 ±34 LM44D ±3 ±59 LM44E ±6 ±89 I R_MIN Minimum Operating Current A / T / I R Temperature Coefficient Change with Operating Current I R = 1 ma ±2 ppm/ C I R = 1 ma LM44A, B, C ±15 ±1 LM44D, E ±15 ±15 I R = 1 ua ±15 I R_MIN I R 1 ma 1mA I R 15 ma LM44A, B, C mv LM44D, E LM44A, B, C LM44D, E Guaranteed by design. 2. Thermal hysteresis is defined as the difference in voltage measured at +25 C after cycling to temperature 4 C and the 25 C measurement after cycling to temperature +125 C. 4
5 LM44, LM441 Table 5. DC ELECTRICAL CHARACTERISTICS (I R = 1 A, T A = 4 C to +85 C, unless otherwise noted. Typical values are at T A = +25 C.) Symbol Parameter 3. V Z R Reverse Dynamic Impedance I R = 1 ma, f = 12 Hz, I AC =.1 I R Test Conditions Min Limits Typ Max Units LM44A, B.4.9 LM44C.4.9 LM44D, E e N Wideband Noise I R = 1 A, 1 Hz f 1 KHz 35 MS Long Term Stability T = 1 h 12 ppm V HYST Thermal Hysteresis (Note 2) T = 4 C to +125 C.8 % 3.3 V T A = +25 C LM44A (.1%) V LM44B (.2%) T A = +25 C LM44C (.5%) V Tolerance LM44D (1.%) LM44A ±3 ±22 mv LM44B ±6 ±26 LM44C ±15 ±34 LM44D ±3 ±59 I R_MIN Minimum Operating Current A / T / I R Temperature Coefficient Change with Operating Current I R = 1 ma ±2 ppm/ C I R = 1 ma LM44A, B, C ±15 ±1 LM44D ±15 ±15 I R = 1 A ±15 I R_MIN I R 1 ma 1 ma I R 15 ma Z R Reverse Dynamic Impedance I R = 1 ma, f = 12 Hz, I AC =.1 I R LM44A, B, C.3 1. mv LM44D LM44A, B, C LM44D LM44A, B.3.8 LM44C.3.9 LM44D e N Wideband Noise I R = 1 A, 1 Hz f 1 KHz 35 MS Long Term Stability T = 1 h 12 ppm V HYST Thermal Hysteresis (Note 2) T = 4 C to +125 C.8 % 4.96 V T A = +25 C LM44A (.1%) V LM44B (.2%) LM44C (.5%) LM44D (1.%) Guaranteed by design. 2. Thermal hysteresis is defined as the difference in voltage measured at +25 C after cycling to temperature 4 C and the 25 C measurement after cycling to temperature +125 C. 5
6 LM44, LM441 Table 5. DC ELECTRICAL CHARACTERISTICS (I R = 1 A, T A = 4 C to +85 C, unless otherwise noted. Typical values are at T A = +25 C.) Symbol 4.96 V Parameter Tolerance Test Conditions Min Limits Typ Max Units LM44A ±4 ±31 mv LM44B ±8 ±35 LM44C ±2 ±47 LM44D ±41 ±8 I R_MIN Minimum Operating Current A / T / I R Temperature Coefficient Change with Operating Current I R = 1 ma ±3 ppm/ C I R = 1 ma LM44A, B, C ±2 ±1 LM44D ±2 ±15 I R = 1 A ±15 I R_MIN I R 1 ma 1 ma I R 15 ma Z R Reverse Dynamic Impedance I R = 1 ma, f = 12 Hz, I AC =.1 I R LM44A, B, C mv LM44D LM44A, B, C 3. 1 LM44D LM44A, B.5 1. LM44C.5 1. LM44D e N Wideband Noise I R = 1 A, 1 Hz f 1 KHz 8 MS Long Term Stability T = 1 h 12 ppm V HYST Thermal Hysteresis (Note 2) T = 4 C to +125 C.8 % 5. V T A = +25 C LM44A (.1%) V Tolerance LM44B (.2%) LM44C (.5%) LM44D (1.%) LM44A ±5 ±38 mv LM44B ±1 ±43 LM44C ±25 ±58 LM44D ±5 ±99 I R_MIN Minimum Operating Current A / T Temperature Coefficient I R = 1 ma ±3 ppm/ C I R = 1 ma LM44A, B, C ±2 ±1 LM44D ±2 ±15 I R = 1 A ±15 1. Guaranteed by design. 2. Thermal hysteresis is defined as the difference in voltage measured at +25 C after cycling to temperature 4 C and the 25 C measurement after cycling to temperature +125 C. 6
7 LM44, LM441 Table 5. DC ELECTRICAL CHARACTERISTICS (I R = 1 A, T A = 4 C to +85 C, unless otherwise noted. Typical values are at T A = +25 C.) Symbol 5. V / I R Parameter Change with Operating Current I R_MIN I R 1 ma 1 ma I R 15 ma Z R Reverse Dynamic Impedance I R = 1 ma, f = 12 Hz, I AC =.1 I R Test Conditions Min Limits Typ Max Units LM44A, B, C mv LM44D LM44A, B, C LM44D LM44A, B LM44C LM44D e N Wideband Noise I R = 1 A, 1 Hz f 1 KHz 8 MS Long Term Stability T = 1 h 12 ppm V HYST Thermal Hysteresis (Note 2) T = 4 C to +125 C.8 % 1. Guaranteed by design. 2. Thermal hysteresis is defined as the difference in voltage measured at +25 C after cycling to temperature 4 C and the 25 C measurement after cycling to temperature +125 C. 7
8 LM44, LM441 TYPICAL PERFORMANCE CHARACTERISTICS 5 1 V IN (V) V IN (V) (V) 1 (V) RESPONSE TIME ( s) RESPONSE TIME ( s) Figure 2. LM V (R S = 3 k) Figure 3. LM44 5 V (R S = 3 k) 8 V IN (V) (V) RESPONSE TIME ( s) Figure 4. LM V (R S = 3 k) 1 1 REVERSE CURRENT ( A) C +85 C 4 C REVERSE CURRENT ( A) C +85 C 4 C REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) Figure 5. Reverse Characteristics (LM V) Figure 6. Reverse Characteristics (LM44 5 V) 8
9 LM44, LM441 TYPICAL PERFORMANCE CHARACTERISTICS CHANGE (%) I R = 15 A ppm/ C 2 ppm/ C 4 TEMPERATURE ( C) 6 8 Figure 7. Temperature Drift LM44 1 CHANGE (%) I R = 15 A TEMPERATURE ( C) +48 ppm/ C 29 ppm/ C 6 8 Figure 8. Temperature Drift LM441 1 OUTPUT IMPEDANCE ( ) 1.E+3 1.E+2 1.E+1 1.E+ 1.E 1 1.E+2 I R = 15 A T J = 25 C, I R =.1I R LM V LM44 5 V LM V 1.E+3 1.E+4 FREQUENCY (Hz) 1.E+5 C L = F C L = 1 F Figure 9. Output Impedance vs. Frequency OUTPUT IMPEDANCE ( ) 1.E+3 1.E+2 1.E+1 1.E+ I R = 1 ma T J = 25 C, I R =.1I R LM44 5 V LM V LM V 1.E 1 1.E+6 1.E+2 1.E+3 1.E+4 1.E+5 1.E+6 FREQUENCY (Hz) C L = F C L = 1 F Figure 1. Output Impedance vs. Frequency 1 REVERSE CURRENT ( A) C C 4 C 1.2 REVERSE VOLTAGE (V) 1.6 Figure 11. Reverse Characteristics LM
10 LM44, LM441 Device Description The LM44x shunt references use ON Semiconductor s floating gate (EEPROM) technology to produce a capacitor which stores an accurate and stable voltage that is used as the reference voltage for a control amplifier and shunt N channel FET. VS RS I SHUNT I LOAD EF + + Figure 12. Functional Block Diagram The device operates like a zener diode; maintaining a fixed voltage across its output terminals when biased with 6 A to 15 ma of reverse current. The LM44x will also act like a silicon diode when forward biased with currents up to 1 ma. Applications Information The LM44x s internal pass transistor maintains a constant output voltage by sinking the necessary amount of current across a source resistor. The source resistance (RS) is set by the load current range (I LOAD ), supply voltage (VS) variations, LM44x s terminal voltage (VR), and desired quiescent current. + Figure 13. Typical Operating Circuit To select a value of RS, set VS at its minimum value and I LOAD at its maximum. Be sure to maintain a minimum operating current of 6 A through LM44x at all times, as LM44x uses this current to power its internal circuitry. The RS value should be large enough to keep I SHUNT less than 15 ma for proper regulation when VS is maximum and I LOAD is at a minimum. Therefore, the value of RS is bounded by the following equation: and VS(min) RS 6 A ILOAD(max) RS VS(max) 15 ma ILOAD(min) Choosing a larger resistance minimizes the power dissipated in the circuit by reducing the shunt current. Output Capacitance The LM44x does not require an external capacitor for frequency stability and is stable for any output capacitance. Effect of Temperature LM44x has an output voltage temperature coefficient of typically ±15 to ±3 ppm/ C meaning the LM44x s output voltage will change by 5 1 V/ C for a 3.3 V regulator. The polarity of this temperature induced voltage shift can vary from device to device, some moving in the positive direction and others in the negative direction. 1
11 LM44, LM441 PACKAGE DIMENSIONS SOT 23, 3 Lead CASE 527AG 1 ISSUE O D SYMBOL MIN NOM MAX A A1 b c E1 E D E E e e1 TOP VIEW e e1 L L1 θ.95 BSC 1.9 BSC.4 REF.54 REF º 8º A b A1 L1 L c SIDE VIEW END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC TO
12 LM44, LM441 PACKAGE DIMENSIONS SC 88A (SC 7 5 Lead), 1.25x2 CASE 419AC 1 ISSUE A e D e SYMBOL MIN NOM MAX A A1..1 A b.15.3 c.1.18 E1 E D E E e.65 BSC L L1.42 REF TOP VIEW L2.15 BSC θ º 8º θ1 4º 1º 1 A2 A 1 b A1 L L1 c L2 SIDE VIEW END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO
13 LM44, LM441 Table 6. ORDERING INFORMATION Part Number LM441ATB 122GT3 Specific Device Marking Voltage Accuracy Max Drift Temperature Range ±.1% LM441BTB 122GT3 ±.2% LM441CTB 122GT3 4M V ±.5% LM441DTB 122GT3 ±1.%, LM441ETB 122GT3 ±2.%, LM44ATB 25GT3 ±.1% LM44BTB 25GT3 ±.2% LM44CTB 25GT3 2.5 V ±.5% LM44DTB 25GT3 ±1.%, LM44ETB 25GT3 ±2.%, LM44ATB 3GT3 ±.1% LM44BTB 3GT3 ±.2% LM44CTB 3GT3 3. V ±.5% LM44DTB 3GT3 ±1.%, LM44ETB 3GT3 ±2.%, LM44ATB 33GT3 ±.1% LM44BTB 33GT3 ±.2% LM44CTB 33GT3 4L 3.3 V ±.5% LM44DTB 33GT3 ±1.%, LM44ETB 33GT3 ±2.%, LM44ATB 49GT3 ±.1% LM44BTB 49GT3 ±.2% LM44CTB 49GT V ±.5% LM44DTB 49GT3 ±1.%, LM44ETB 49GT3 ±2.%, LM44ATB 5GT3 ±.1% LM44BTB 5GT3 ±.2% LM44CTB 5GT3 5. V ±.5% LM44DTB 5GT3 ±1.%, LM44ETB 5GT3 ±2.%, 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C 4 C to 85 C Package (Note 3) SOT Tape & Reel, 3, Units / Reel 4. All packages are RoHS compliant (Lead free, Halogen free). 5. The standard lead finish is NiPdAu. 6. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 7. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device Nomenclature document, TND31/D, available at 13
14 LM44, LM441 Table 6. ORDERING INFORMATION Part Number LM441ASD 122GT3 Specific Device Marking Voltage Accuracy ±.1% LM441BSD 122GT3 ±.2% LM441CSD 122GT3 4M V ±.5% LM441DSD 122GT3 ±1.%, LM441ESD 122GT3 ±2.%, LM44ASD 25GT3 ±.1% LM44BSD 25GT3 ±.2% LM44CSD 25GT3 2.5 V ±.5% LM44DSD 25GT3 ±1.%, LM44ESD 25GT3 ±2.%, LM44ASD 3GT3 ±.1% LM44BSD 3GT3 ±.2% LM44CSD 3GT3 3. V ±.5% LM44DSD 3GT3 ±1.%, LM44ESD 3GT3 ±2.%, LM44ASD 33GT3 ±.1% LM44BSD 33GT3 ±.2% LM44CSD 33GT3 4L 3.3 V ±.5% LM44DSD 33GT3 ±1.%, LM44ESD 33GT3 ±2.%, LM44ASD 49GT3 ±.1% LM44BSD 49GT3 ±.2% LM44CSD 49GT V ±.5% LM44DSD 49GT3 ±1.%, LM44ESD 49GT3 ±2.%, LM44ASD 5GT3 ±.1% LM44BSD 5GT3 ±.2% LM44CSD 5GT3 5. V ±.5% LM44DSD 5GT3 ±1.%, LM44ESD 5GT3 ±2.%, Max Drift 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C 1 ppm/ C 15 ppm/ C Temperature Range 4 C to 85 C Package (Note 3) SC Tape & Reel, 3, Units / Reel 4. All packages are RoHS compliant (Lead free, Halogen free). 5. The standard lead finish is NiPdAu. 6. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 7. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device Nomenclature document, TND31/D, available at 14
15 LM44, LM441 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative LM44/D
onlinecomponents.com
MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More informationV N (8) V N (7) V N (6) GND (5)
4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level
More informationBAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol
More informationBC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
More informationNSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual
NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.
More informationBAT54XV2 Schottky Barrier Diode
June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage
More informationMMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control
More informationNL17SV16. Ultra-Low Voltage Buffer
N7S6 Ultra-ow oltage Buffer The N7S6X5T is an ultra high performance single Buffer fabricated in sub micron silicon gate 0.35 m technology with excellent performance down to 0.9. This device is ideal for
More informationBC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More informationNTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88
NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class
More informationMMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes
MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-
More information1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS
PMT90B Series. Watt Plastic Surface Mount POWERMITE Package This complete new line of. Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat
More informationNGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
More informationBC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor
November 204 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC546, V CEO = 65 V Low-Noise: BC549, BC550 Complement to BC556, BC557,
More informationMMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon
MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
More informationNDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
More informationBSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
More informationNGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
More informationNGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationNCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit
NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit
More informationS3A - S3N General-Purpose Rectifiers
S3A - S3N General-Purpose Rectifiers Features Low-Profile Package Glass-Passivated Junction UL Flammability Classification: 94V-0 UL Certified, UL #E258596 SMC/DO-214AB COLOR BAND DENOTES CATHODE ELECTRICAL
More information2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More informationNGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More information2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
More informationMUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS
MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features
More informationSN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY
of 0 Decoder/Driver Open Collector The SN74LS45, -of-0 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 0-digit incandescent displays. All outputs remain off for
More informationNLSV2T Bit Dual-Supply Inverting Level Translator
2-Bit Dual-Supply Inverting Level Translator The NLSV2T240 is a 2 bit configurable dual supply voltage level translator. The input A n and output B n ports are designed to track two different power supply
More information74AC00, 74ACT00 Quad 2-Input NAND Gate
74AC00, 74ACT00 Quad 2-Input NAND Gate Features I CC reduced by 50% Outputs source/sink 24mA ACT00 has TTL-compatible inputs Ordering Information Order Number Package Number General Description The AC00/ACT00
More information2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
More informationNL17SZ08. Single 2-Input AND Gate
N7SZ08 Single 2-Input AND Gate The N7SZ08 is a single 2 input AND Gate in two tiny footprint packages. The device performs much as CX multi gate products in speed and drive. They should be used wherever
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More informationNTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m
NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNCS1002A. Constant Voltage / Constant Current Secondary Side Controller
NCS00A Constant Voltage / Constant Current Secondary Side Controller Description The NCS00A is a performance upgrade from the NCS00 focused on reducing power consumption in applications that require more
More informationSN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY
Quad 2 Input Schmitt Trigger NAND Gate The SN74LS32 contains four 2-Input NAND Gates which accept standard TTL input signals and provide standard TTL output levels. They are capable of transforming slowly
More informationBC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general
More informationSN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY
Quad 2 Input Multiplexer The LSTTL/ MSI is a high speed Quad 2-Input Multiplexer. Four bits of data from two sources can be selected using the common Select and Enable inputs. The four buffered outputs
More informationBC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
More informationRS1A - RS1M Fast Rectifiers
RSA - RSM Fast Rectifiers Features Glass-Passivated Junction For Surface Mounted Applications uilt-in Strain Relief, Ideal for Automated Placement UL Certified: Certificate # E326243 SMA/DO-24AC COLOR
More information74VHC08 Quad 2-Input AND Gate
74VHC08 Quad 2-Input AND Gate Features High Speed: t PD = 4.3ns (Typ.) at T A = 25 C High noise immunity: V NIH = V NIL = 28% V CC (Min.) Power down protection is provided on all inputs Low power dissipation:
More informationNL17SH02. Single 2-Input NOR Gate
N7S0 Single -Input NOR Gate The N7S0 MiniGate is an advanced high speed CMOS input NOR gate in ultra small footprint. The N7S0 input structures provide protection when voltages up to 7.0 are applied, regardless
More informationNTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A
NTMFDCN PowerPhase, Dual N-Channel SOFL V, High Side A / Low Side 9 A Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power
More information2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS
, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.
More informationFFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A
FFSH65BDN-F85 Silicon Carbide Schottky Diode, 65 V, A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationNGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj
NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance
More informationNGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj
NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance
More informationMC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays
General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC336 is designed for general purpose, low power applications for consumer and industrial designs.
More informationPN2907 / MMBT2907 PNP General-Purpose Transistor
PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.
More informationFFSH40120ADN-F155 Silicon Carbide Schottky Diode
FFSH412ADN-F155 Silicon Carbide Schottky Diode 12 V, 4 A Features Max Junction Temperature 175 o C Avalanche Rated 2 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling
More informationMJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
More informationNGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj
NGTGNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More informationNTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)
NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications
More informationPZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT
NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for
More informationMMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,
More informationNL27WZ14. Dual Schmitt Trigger Inverter
N7WZ Dual Schmitt Trigger Inverter The N7WZ is a high performance dual inverter with Schmitt Trigger inputs operating from a.5 to supply. Pin configuration and function are the same as the N7WZ0, but the
More informationMUR405, MUR410, MUR415, MUR420, MUR440, MUR460
4, 4, 41, 42, 44, 46 42 and 46 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling
More informationBC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter
More informationFPF1007-FPF1009 IntelliMAX Advanced Load Products
FPF07-FPF09 IntelliMAX Advanced Load Products Features 1.2 to 5.5 V Input Voltage Range Typical R ON = 30 mω at = 5.5 V Typical R ON = 40 mω at = 3.3 V Fixed Three Different Turn-on Rise Time µs / 80 µs
More informationP2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
More information2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector
More informationMC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger
MC74AC32, MC74ACT32 Quad 2 Input NAND Schmitt Trigger The MC74AC/74ACT32 contains four 2 input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter free
More informationMMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.
LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage
More informationNL37WZ07. Triple Buffer with Open Drain Outputs
Triple Buffer with Open Drain Outputs The N7WZ7 is a high performance triple buffer with open drain outputs operating from a.6 to. supply. The internal circuit is composed of multiple stages, including
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNE522 High Speed Dual Differential Comparator/Sense Amp
HighSpeed DualDifferential Comparator/Sense Amp Features 5 ns Maximum Guaranteed Propagation Delay 0 A Maximum Input Bias Current TTL-Compatible Strobes and Outputs Large Common-Mode Input oltage Range
More information2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current
More informationFFSH20120ADN-F085. Silicon Carbide Schottky Diode 1200 V, 20 A
FFSH212ADN-F85 Silicon Carbide Schottky Diode 12 V, 2 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More information74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
of 8 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The 74HC38 is identical in pinout to the LS38. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are
More informationMC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter
MC74CGT0 Noninverting Buffer / CMOS Logic Level Shifter TTL Compatible Inputs The MC74CGT0 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation
More informationNL17SHT08. 2-Input AND Gate / CMOS Logic Level Shifter
N7ST08 -Input AND Gate / CMOS ogic evel Shifter The N7ST08 is an advanced high speed CMOS input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent
More informationMMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES
MMBVLT Series, MV5, MV, MV9, LV9 Preferred evice Silicon Tuning iodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general
More informationFDV301N Digital FET, N-Channel
FVN igital FET, N-Channel General escription This N-Channel logic level enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, MOS technology. This
More informationBC846ALT1 Series. General Purpose Transistors. NPN Silicon
BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages
More informationNTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More informationAND8149/D. Understanding and Using the NCV1124 VR Sensor Interface APPLICATION NOTE
Understanding and Using the VR Sensor Interface APPLICATION NOTE The offers a dual channel low component count interface solution for ground referenced variable reluctance sensors. The product is easy
More informationBC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter
More informationBC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector
More informationNTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)
NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
More informationNL27WZ08. Dual 2-Input AND Gate. The NL27WZ08 is a high performance dual 2 input AND Gate operating from a 1.65 V to 5.5 V supply.
N27WZ Dual 2-Input AND Gate The N27WZ is a high performance dual 2 input AND Gate operating from a.6 to. supply. Features Extremely igh Speed: t PD 2. ns (typical) at = Designed for.6 to. Operation Over
More informationNL27WZU04. Dual Unbuffered Inverter
Dual Unbuffered Inverter The N27WZU04 is a high performance dual unbuffered inverter operating from a.5 to 5.5 V supply. These devices are well suited for use as oscillators, pulse shapers, and in many
More informationNLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
More informationMC100LVE VНECL 16:1 Multiplexer
3.3VНECL 16:1 Multiplexer The is a 16:1 multiplexer with a differential output. The select inputs (SEL0, 1, 2, 3 ) control which one of the sixteen data inputs (A0 A15) is propragated to the output. The
More informationSN74LS125A, SN74LS126A. Quad 3 State Buffers LOW POWER SCHOTTKY. LS125A LS126A TRUTH TABLES ORDERING INFORMATION
Quad 3 State Buffers V CC E D O E D O 4 3 2 0 9 8 LOW POWER SCHOTTKY 2 3 4 5 6 E D O E D O LS25A GND V CC E D O E D O 4 3 2 0 9 8 4 PLASTIC N SUFFIX CASE 646 LS25A INPUTS 2 3 4 5 6 E D O E LS26A D O GND
More informationBC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO
More informationSN74LS147, SN74LS Line to 4 Line and 8 Line to 3 Line Priority Encoders LOW POWER SCHOTTKY
0 Line to Line and 8 Line to 3 Line Priority Encoders The SN7LS7 and the SN7LS8 are Priority Encoders. They provide priority decoding of the inputs to eure that only the highest order data line is encoded.
More informationNTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL
NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized
More informationFFSH30120A. Silicon Carbide Schottky Diode 1200 V, 30 A
Silicon Carbide Schottky Diode 12 V, 3 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to
More information2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector
More informationFST Bit Bus Switch
FST32 4-Bit Bus Switch The ON Semiconductor FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and adds
More informationNGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj
NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More informationMC74VHC14. Hex Schmitt Inverter
MC74HC4 Hex Schmitt Inverter The MC74HC4 is an advanced high speed CMOS Schmitt inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
More informationFDG6322C Dual N & P Channel Digital FET
FG6C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationFeatures. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D
FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More information2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140
More informationLOW POWER SCHOTTKY. ESD > 3500 Volts. GUARANTEED OPERATING RANGES ORDERING INFORMATION V CC 8 7 GND
ESD > 3500 Volts V CC 8 4 3 2 0 9 LOW POWER SCHOTTKY 2 3 4 5 6 7 GND GUARANTEED OPERATING RANGES Symbol Parameter Min Typ Max Unit V CC Supply Voltage 4.75 5.0 5.25 V T A Operating Ambient Temperature
More informationSN74LS157MEL LOW POWER SCHOTTKY
The LSTTL/MSI SN74LS157 is a high speed Quad 2-Input Multiplexer. Four bits of data from two sources can be selected using the common Select and Enable inputs. The four buffered outputs present the selected
More information