Green. TO251 Bottom View. Part Number Case Packaging MBR2045CTI TO Pieces/Tube
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1 FMT Green 20 SHTTKY B TF Product Summary (Per Leg) escription This Schottky Barrier ectifier has been designed to meet requirements of onsumer grade pplications. pplications M () Polarity Protection iode e-irculating iode Switching iode () F (MX) +25 (MX) Features and Benefits Guard ing ie onstruction for Transient Protection High Surge urrent apability Low Forward oltage rop Lead-Free Finish; ohs ompliant (otes 1 & 2) Halogen and ntimony Free. Green evice (ote 3) Qualified to -Q1 Standards for High eliability Mechanical ata ase: ase Material: Molded Plastic, Green Molding compound. L Flammability lassification ating 94-0 Moisture Sensitivity: Level 1 per J-ST-020 Terminals: Finish - Matte Tin nnealed over opper Leadframe Solderable per ML-ST-202, Method 208 Polarity: See Below Weight: grams (pproximate) Top iew Bottom iew Package Pin ut onfiguration rdering nformation (ote 4) Part umber ase Packaging 75 Pieces/Tube otes: 1. irective 2002/95/ (ohs) & 2011/65/ (ohs 2) compliant. ll applicable ohs exemptions applied. 2. See for more information about iodes ncorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + l) and <00ppm antimony compounds. 4. For packaging details, go to our website at Marking nformation = Manufactures' ode Marking = Product Type Marking ode B = Foundry and ssembly ode YYWW = ate ode Marking YY = Last Two igits of Year (ex: 16 = 2016) WW = Week (01 to 53) ocument number: S36471 ev of 5
2 P, PW SSPT (W) F, STTS FW T () FMT Maximum atings (Per Leg) (@T = +25, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Peak epetitive everse oltage Working Peak everse oltage Blocking oltage verage ectified utput urrent haracteristic Symbol alue nit on-epetitive Peak Forward Surge urrent 8.3ms Single Half Sine-Wave Superimposed on ated Load (Per Leg) (Total) M WM M FSM 130 Thermal haracteristics (Per Leg) haracteristic Symbol alue nit Typical Thermal esistance, Junction to ase (ote 5) θj 16 /W Typical Thermal esistance, Junction to mbient (ote 5) θj 80 /W perating and Storage Temperature ange T J, T STG -55 to +150 lectrical haracteristics (Per Leg) (@T = +25, unless otherwise specified.) haracteristic Symbol Min Typ Max nit Test ondition Forward oltage rop F F =, T J = +25 F =, T J = +125 F = 20, T J = +25 F = 20, T J = +125 Leakage urrent (ote 6) 15 m = 45, T J = +25 = 45, T J = +125 otes: 5. F-4 PB, 2oz.opper, minimum recommended pad layout per 6. Short duration pulse test used to minimize self-heating effect F() G FW T () Figure 1 Forward Power issipation ) ( T W F S T T S, F T = 150 T = 125 T = 85 T = 25 T = F, STTS FW LTG (m) Figure 2 Typical Forward haracteristics ocument number: S36471 ev of 5
3 T, T MBT TMPT ( ) FMT, STTS S T (µ) T, TTL PT (pf) ) ( µ T S S T T S, ) ( T W F G, 00 ) F( F(), G FW T () T = 150 T = 85 T = 125 T = 25 T = , STTS S LTG () Figure 3 Typical everse haracteristics T, MBT TMPT ( ) Figure 5 Forward urrent erating urve , S LTG () Figure 4 Total apacitance vs. everse oltage , S LTG () Figure 6 perating Temperature erating ocument number: S36471 ev of 5
4 FMT Package utline imensions Please see for the latest version L L1 b im Min Max b c e e L L ll imensions in mm e c e1 2 ocument number: S36471 ev of 5
5 FMT MPTT T S PT MKS WTY F Y K, XPSS MPL, WTH GS T THS MT, LG, BT T LMT T, TH MPL WTS F MHTBLTY FTSS F PTL PPS ( TH QLTS TH LWS F Y JST). iodes ncorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes ncorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes ncorporated convey any license under its patent or trademark rights, nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes ncorporated and all the companies whose products are represented on iodes ncorporated website, harmless against all damages. iodes ncorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should ustomers purchase or use iodes ncorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold iodes ncorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more nited States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more nited States, international or foreign trademarks. This document is written in nglish but may be translated into multiple languages for reference. nly the nglish version of this document is the final and determinative format released by iodes ncorporated. LF SPPT iodes ncorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief xecutive fficer of iodes ncorporated. s used herein:. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes ncorporated. Further, ustomers must fully indemnify iodes ncorporated and its representatives against any damages arising out of the use of iodes ncorporated products in such safety-critical, life support devices or systems. opyright 2016, iodes ncorporated ocument number: S36471 ev of 5
2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information
YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state
More informationI D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel
AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS
More informationGreen. Features. I D T C = +25 C (Note 10) 100A 95A. Pin1. Top View Pin Configuration
Product ummary BV V () Max.mΩ @ V G = V.mΩ @ V G = V escription and pplications I T = + (ote ) 9 This MFT is designed to meet the stringent requirements of automotive applications. It is qualified to -Q,
More informationI D max T A = +25 C (Note 6)
YM M27MQ 2 MPMY PI HM M MF Product ummary evice B ) max I max = +25 ote 6) Q1 2 Ω @ = 4.5 1.34.5Ω @ = 2.5 1.65 Q2-2.7Ω @ = -4.5-1.14.9Ω @ = -2.5 -.94 escription and pplications his MF has been designed
More informationTop View Bottom View Internal Schematic (Top View)
W P M3415FY4Q P-H HM M MF Product ummary B) -16 ) max 39mΩ @ = -4.5 52mΩ @ = -2.5 65mΩ @ = -1.8 escription and pplications max = +25-2.5-2.1-1.8 his MF is designed to minimize the on-state resistance ))
More information-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel
DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits
More informationS S. Top View Bottom View
YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain
More informationTop View. Part Number Case Packaging DMP6180SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
6V P-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits BV SS -6V R S(ON) Max I T C = +25 C mω @ V = -V -4 4mΩ @ V = -4.5V -2 Low On-Resistance Low Input Capacitance Totally Lead-Free &
More information-6.0A -5.2A TSOT26 1. Top View Pin-Out. Part Number Case Packaging DMP2035UVT-7 TSOT26 3,000/Tape & Reel DMP2035UVT-13 TSOT26 10,000/Tape & Reel
YM -2V P-HL HM MO MOSF Product Summary Features and Benefits BV SS -2V S(O) Max 35mΩ @ V S = -4.5V 45mΩ @ V S = -2.5V I = +25-6. -5.2 Low Input apacitance Low On-esistance Fast Switching Speed S Protected
More informationDMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4)
YYWW VNE INFORMTION OMPLEMENTRY PIR ENHNEMENT MOE MOSFET PowerI Product Summary evice V (BR)SS R S(ON) Max Q 3V Q -3V escription mω @ V = V 7mΩ @ V = 4.V I Max T = + 8 mω @ V = -V - 38mΩ @ V = -4.V - This
More informationDMN2400UFB4. Features. Mechanical Data. Ordering Information (Note 4) 20V N-CHANNEL ENHANCEMENT MODE MOSFET DMN2400UFB4
2V N-HNNL NHMN MO MOF Features Mechanical ata Low On-esistance Low ate hreshold Voltage Low nput apacitance Fast witching peed Low nput/output Leakage ltra-mall urface Mount Package ltra-low Package Profile,.4mm
More informationGate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel
P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching
More information(Notes 6 & 8) Top View
NEW PRODUCT 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(ON) Max I D Max () T = +25 C (Notes 6 & 8) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched N
More information-3.4A -3.0A. Part Number Case Packaging DMP4065SQ-7 SOT23 3,000/Tape & Reel DMP4065SQ-13 SOT23 10,000/Tape & Reel
Product ummary BV -4V (O) max 8mΩ @ V G = -V mω @ V G = -4.5V I max T = +25-3.4-3. MP45Q 4V P-HL HMT MO MOFT Features and Benefits Low On-esistance Low Input apacitance Fast witching peed Low Input/Output
More informationI D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View
Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description
More informationDMP4015SK3. Features and Benefits. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information
Green MP45SK3 P-HNNEL ENHNEMENT MOE MOSFET Product Summary V (BR)SS -4V escription R S(on) max I T = +25 mω @ V = -V -35 5mΩ @ V = -4.5V -3 This new generation MOSFET has been designed to minimize the
More information430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View
DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and
More informationFeatures. H-Bridge. Top View Pin Configuration. Part Number Case Packaging DMHC6070LSD-13 SO-8 2,500/Tape & Reel
NE PROUCT NCE INFORMTION MHC7LS COMPLEMENTRY ENHNCEMENT MOE MOSFET H-BRIGE Product Summary evice (BR)SS R S(ON) Max N-Channel P-Channel - I Max T = 5 C mω @ =. mω @ =.5.7 7mΩ @ = -. 5mΩ @ = -.5. Features
More informationBottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel
YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile
More informationTop View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance
More informationGreen. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration
Product ummary BV 3V R (ON).mΩ @ V G = V 3.mΩ @ V G = 4.5V escription and Applications I T C = +5 C 5A A This new generation MOFET is designed to minimize R (ON), yet maintain superior switching performance.
More information-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel
YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A
More informationDrain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel
BSN2 N-HANNEL ENHANEMENT MODE FIELD MOSFET Product Summary Features and Benefits NEW PRODUT V (BR)DSS 5V Description R DS(ON) I D T A = +25 1.8 @ V = 1V 5mA 2. @ V = 4.5V 45mA This new generation MOSFET
More informationFeatures. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel
N-CHANNEL ENHANCEMENT MOE FEL MOSFET Product Summary BV SS R S(ON) Package T A = +25 C 6V Ω @ V S = V escription This new generation uses advanced planar technology MOSFET, provide excellent high voltage
More informationGreen. Pin 1 1 S S S G 2. Bottom View
YYWW Green 3V N-CHANNEL ENHANCEMENT MOE MOFET PowerI3333- Product ummary BV 3V escription R (ON) Max.7mΩ @ V G = V.mΩ @ V G =.V I Max T C = + C A A This MOFET is designed to minimize the on-state resistance
More information34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is
More informationGreen. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel
Product ummary BV 6V R (ON) 6mΩ @ V = V 24mΩ @ V = 4.5V escription and Applications I T C = +25 C 37A 29A This MOFET has been designed to meet the stringent requirements of Automotive applications. It
More informationS S. Bottom View. Part Number Case Packaging DMN3020UTS-13 TSSOP-8 2,500/Tape & Reel
N-CHNNEL ENHNCEMENT MOE MOFET Product ummary BV 3V R (ON) max I max T C = +25 C 2mΩ @ V G = 4.5V 25mΩ @ V G = 2.5V 14 escription and pplications This MOFET is designed to minimize the on-state resistance
More informationFeatures. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration
DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C 15.5mΩ @ V = 4.5V 7.5 16.5mΩ @ V = 4.V 7.3 19mΩ @ V = 3.1V 6.9 2mΩ @ V
More informationPin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel
YYWW NEW PROUCT Product ummary BV 3V R (ON) max 4.5mΩ @ V G = V 7.mΩ @ V G = 4.5V escription and Applications I max T C = +5 C (Note 9) 5A 5A This MOFET has been designed to minimize the on-state resistance
More informationI D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel
DVNCE INFORMTION V COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max I D T = +5 C Q N-Channel V mω @ V = V.5 55mΩ @ V =.5V 5. Q P-Channel -V mω @ V = -V -3.9 3mΩ @ V =
More informationGreen. Pin1. Part Number Case Packaging DMTH3004LPSQ-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product ummary BV 3V R (ON) Max 3.8mΩ @ V G = V 6mΩ @ V G = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOFET is designed to meet the stringent requirements
More informationGreen -14.5A. Pin1. Part Number Compliance Case Packaging DMP4015SPS-13 Standard POWERDI ,500 / Tape & Reel
reen MP45P 4V P-HNNEL ENHNEMENT MOE MOFET POWERI Product ummary Features and Benefits NEW PROUT V (BR) -4V escription R (on) max I T = +25 mω @ V = -V -7 5mΩ @ V = -4.5V -4.5 This new generation MOFET
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YM O OMMDD FO W DSIG US DM253UV OMPLMY PI HM MOD MOSF Product Summary Device BV DSS DS(O) Q 2V Q2-2V Description = +25 35mΩ @ V GS = 4.5V 4.5 56mΩ @ V GS =.8V 3.5 74mΩ @ V GS = -4.5V 68mΩ @ V GS = -.8V
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DUAL BUFFERS Description The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The is composed of two buffers with standard
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NEW PROUCT P-CHNNEL ENHNCEMENT MOE MOFET Product ummary Features and Benefits BV R (ON) Max T = +25 C % Unclamped nductive witch (U) Test in Production Low nput Capacitance -4V mω @ V G = -V 5mΩ @ V G
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