Features. H-Bridge. Top View Pin Configuration. Part Number Case Packaging DMHC6070LSD-13 SO-8 2,500/Tape & Reel
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1 NE PROUCT NCE INFORMTION MHC7LS COMPLEMENTRY ENHNCEMENT MOE MOSFET H-BRIGE Product Summary evice (BR)SS R S(ON) Max N-Channel P-Channel - I Max T = 5 C =. =.5.7 = -. = -.5. Features x N + x P Channels in a SOIC Package Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and ntimony Free. Green evice (Note ) escription Mechanical ata This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. pplications C Motor Control C-C Inverters Case: SO- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating - Moisture Sensitivity: Level per -ST- Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin nnealed over Copper Leadframe. Solderable per MIL-ST-, Method eight:.7 grams (pproximate) SO- Top iew PG NG PS/PS H-Bridge N/P N/P NS/NS PG NG Top iew Pin Configuration Internal Schematic Ordering Information (Note ) Part Number Case Packaging MHC7LS- SO-,5/Tape & Reel Notes:. No purposely added lead. Fully EU irective /5/EC (RoHS) & /5/EU (RoHS ) compliant.. See for more information about iodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free.. Halogen- and ntimony-free "Green products are defined as those which contain <ppm bromine, <ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds.. For packaging details, go to our website at Marking Information 5 HC7L YY = Manufacturer s Marking HC7L = Product Type Marking Code YY = ate Code Marking YY = Year (ex: = ) = eek ( - 5) MHC7LS ocument number: S7 Rev. - of pril
2 NE PROUCT NCE INFORMTION MHC7LS Maximum Ratings N-Channel = +5 C, unless otherwise specified.) Characteristic Symbol alue Units rain-source oltage SS Gate-Source oltage S ± Continuous rain Current (Note 5) = Steady T = +5 C. I State T = +7 C.5 T t<s = +5 C. I T = +7 C. Maximum Continuous Body iode Forward Current (Note 5) I S. Pulsed rain Current (µs Pulse, uty Cycle = %) I M 5 valanche Current (Note ) L =.mh I S valanche Energy (Note ) L =.mh E S m Maximum Ratings P-Channel (@T = +5 C, unless otherwise specified.) Characteristic Symbol alue Units rain-source oltage SS - Gate-Source oltage S ± Continuous rain Current (Note 5) = - Steady T = 5 C -. I State T = 7 C -. T t<s = 5 C -. I T = 7 C -.5 Maximum Continuous Body iode Forward Current (Note 5) I S -. Pulsed rain Current (µs Pulse, uty Cycle = %) I M - valanche Current (Note ) L =.mh I S - valanche Energy (Note ) L =.mh E S m Thermal Characteristics (@T = +5 C, unless otherwise specified.) Characteristic Symbol alue Units Total Power issipation (Note 5) P. Thermal Resistance, unction to mbient (Note 5) Steady State 75 R t<s θ 5 C/ Thermal Resistance, unction to Case (Note 5) R θc Operating and Storage Temperature Range T, T STG -55 to +5 C MHC7LS ocument number: S7 Rev. - of pril
3 NE PROUCT NCE INFORMTION MHC7LS Electrical Characteristics N-Channel = +5 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 7) rain-source Breakdown oltage B SS I = 5µ, = Zero Gate oltage rain Current I SS µ S=, = Gate-Source Leakage I S n =, S= ON CHRCTERISTICS (Note 7) Gate Threshold oltage (TH).. I = 5µ, S= Static rain-source On-Resistance R S(ON) =, I =. mω 7 =.5, I =.5 iode Forward oltage S.. =, I S= YNMIC CHRCTERISTICS (Note ) Input Capacitance C ISS 7 pf S=, = Output Capacitance C OSS f= MHz Reverse Transfer Capacitance C RSS Gate resistance R G. Ω S =, =, f =.MHz Total Gate Charge Q G 5. =.5 Total Gate Charge Q G.5 nc S= Gate-Source Charge Q. = I = Gate-rain Charge Q G.5 Turn-On elay Time t (ON). Turn-On Rise Time t R ns =, = Turn-Off elay Time t (OFF) R L 5Ω, R G Ω Turn-Off Fall Time t F Body iode Reverse Recovery Time t RR.5 ns I S =., di/dt = /μs Body iode Reverse Recovery Charge Q RR. nc I S =., di/dt = /μs Electrical Characteristics P-Channel (@T = +5 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 7) rain-source Breakdown oltage B SS - =, I = -5μ Zero Gate oltage rain Current I SS - μ S = -, = Gate-Source Leakage I S ± n = ±, S = ON CHRCTERISTICS (Note 7) Gate Threshold oltage (TH) - - S =, I = -5μ Static rain-source On-Resistance R S(ON) 7 = -, I = -. mω 7 5 = -.5, I = -.5 iode Forward oltage S =, I S = - YNMIC CHRCTERISTICS (Note ) Input Capacitance C ISS pf S = -, =, Output Capacitance C OSS f =.MHz Reverse Transfer Capacitance C RSS Gate resistance R G Ω S =, =, f =.MHz Total Gate Charge Q G. = -.5 Total Gate Charge Q G. nc S= - Gate-Source Charge Q. = - I = - Gate-rain Charge Q G.7 Turn-On elay Time t (ON) 7. Turn-On Rise Time t R. ns = -, = - Turn-Off elay Time t (OFF) 7. R L 5Ω, R G Ω Turn-Off Fall Time t F 7. Body iode Reverse Recovery Time t RR. ns I S = -., di/dt = /μs Body iode Reverse Recovery Charge Q RR. nc I S = -., di/dt = /μs Notes: 5. evice mounted on FR- substrate PC board, oz copper, with inch square copper plate.. I S and E S rating are based on low frequency and duty cycles to keep T = +5 C 7. Short duration pulse test used to minimize self-heating effect.. Guaranteed by design. Not subject to product testing. MHC7LS ocument number: S7 Rev. - of pril
4 R S(ON), RIN-SOURCE ON-RESISTNCE ( ) R S(ON), RIN-SOURCE ON-RESISTNCE (NORMLIZE) R S(ON), RIN-SOURCE ON-RESISTNCE ( ) R S(ON), RIN-SOURCE ON-RESISTNCE ( ) NE PROUCT NCE INFORMTION I, RIN CURRENT () I, RIN CURRENT () MHC7LS Typical Performance Characteristics N-Channel 7 =.5 =.5 = = 7 = 5. S 5 =. = , RIN-SOURCE OLTGE () S Figure Typical Output Characteristic.5 5 T = 5 C T = 5 C T = 5 C T = 5 C T = -55 C , GTE-SOURCE OLTGE () Figure Typical Transfer Characteristics...5. =.5. I =.5. = I = 5m I, RIN-SOURCE CURRENT () Figure Typical On-Resistance vs. rain Current and Gate oltage.5 =.5, GTE-SOURCE OLTGE () Figure Typical rain-source On-Resistance vs. Gate-Source oltage.5. T = 5 C T = 5 C = I = 5.5 T = 5 C.5 =.5 I =. T = 5 C.5 T = -55 C I, RIN CURRENT () Figure 5 Typical On-Resistance vs. rain Current and Temperature T, UNCTION TEMPERTURE ( C) Figure On-Resistance ariation with Temperature MHC7LS ocument number: S7 Rev. - of pril
5 GTE THRESHOL OLTGE () I, RIN CURRENT () I S, SOURCE CURRENT () C T, UNCTION CPCITNCE (pf) NE PROUCT NCE INFORMTION R S(ON), RIN-SOURCE ON-RESISTNCE ( ) (th), GTE THRESHOL OLTGE () MHC7LS =.5 I = = I = I = 5µ I = m T, UNCTION TEMPERTURE ( C) Figure 7 On-Resistance ariation with Temperature T, UNCTION TEMPERTURE ( C) Figure Gate Threshold ariation vs. mbient Temperature f=mhz 7 C iss 5 T = 5 C T = 5 C T = 5 C T = 5 C T = -55 C S, SOURCE-RIN OLTGE () Figure iode Forward oltage vs. Current C rss C oss S, RIN-SOURCE OLTGE () Figure Typical unction Capacitance R S(on) Limited P = µs = S I = Q g, TOTL GTE CHRGE (nc) Figure Gate Charge. C P = s T = 5 C (m ax) T = 5 C P = s P = ms P = ms P = ms = Single Pulse UT on * MRP Board.., RIN-SOURCE OLTGE () S Figure SO, Safe Operation rea MHC7LS ocument number: S7 Rev. - 5 of pril
6 R S(ON), RIN-SOURCE ON-RESISTNCE ( ) R S(ON), RIN-SOURCE ON-RESISTNCE (NORMLIZE) R S(ON), RIN-SOURCE ON-RESISTNCE ( ) R S(ON), RIN-SOURCE ON-RESISTNCE ( ) NE PROUCT NCE INFORMTION I, RIN CURRENT () I, RIN CURRENT () MHC7LS Typical Performance Characteristics P-Channel = - = -.5 = - = -5. S = = -. = -. = S, RIN-SOURCE OLTGE () Figure Typical Output Characteristic. T = 5 C T = 5 C T = 5 C T = 5 C T = -55 C , GTE-SOURCE OLTGE () Figure Typical Transfer Characteristics. I = = = I = 5m. 5 7 I, RIN-SOURCE CURRENT () Figure 5 Typical On-Resistance vs. rain Current and Gate oltage.5... = -.5 T = 5 C T = 5 C T = 5 C T = 5 C, GTE-SOURCE OLTGE () Figure Typical rain-source On-Resistance vs. Gate-Source oltage..... = - I = -5 = -.5 I = -. T = -55 C I, RIN CURRENT () Figure 7 Typical On-Resistance vs. rain Current and Temperature T, UNCTION TEMPERTURE ( C) Figure On-Resistance ariation with Temperature MHC7LS ocument number: S7 Rev. - of pril
7 C T, UNCTION CPCITNCE (pf) GTE THRESHOL OLTGE () (th), GTE THRESHOL OLTGE () I S, SOURCE CURRENT () NE PROUCT NCE INFORMTION R S(ON), RIN-SOURCE ON-RESISTNCE (NORMLIZE) R S(ON), RIN-SOURCE ON-RESISTNCE ( ) MHC7LS..... = - I = -5 = -.5 I = -. = -.5 I = -... = - I = T, UNCTION TEMPERTURE ( C) Figure On-Resistance ariation with Temperature T, UNCTION TEMPERTURE ( C) Figure On-Resistance ariation with Temperature 5.5 I = -5µ I = -m.5 T = 5 C T = 5 C T = 5 C T = -55 C.5 T = 5 C T, UNCTION TEMPERTURE ( C) Figure Gate Threshold ariation vs. mbient Temperature f=mhz S, SOURCE-RIN OLTGE () Figure iode Forward oltage vs. Current C iss = - S I = - C oss C rss 5 5 5, RIN-SOURCE OLTGE () S Figure Typical unction Capacitance Q g, TOTL GTE CHRGE (nc) Figure Gate Charge MHC7LS ocument number: S7 Rev. - 7 of pril
8 r(t), TRNSIENT THERML RESISTNCE NE PROUCT NCE INFORMTION I, RIN CURRENT () MHC7LS R S(on) Limited P = µs. C T = 5 C (m ax) T = 5 C P = s P = s P = ms P = ms P = ms = - Single Pulse UT on * MRP Board.., RIN-SOURCE OLTGE () S Figure SO, Safe Operation rea =. =.7 =.5 =.. =. =.5 =.. =. =.5 R (t) = r(t) * R Single Pulse R = C/ uty Cycle, = t/ t t, PULSE URTION TIMES (sec) Figure 5 Transient Thermal Resistance MHC7LS ocument number: S7 Rev. - of pril
9 NE PROUCT NCE INFORMTION.5 MHC7LS Package Outline imensions Please see for the latest version. SO- e b E E h etail 5 L 7 ~ Gauge Plane Seating Plane etail SO- im Min Max b E 5.. E.5.5 e.7 Typ h.5 L.. ll imensions in mm Suggested Pad Layout Please see for the latest version. SO- X C C imensions alue (in mm) X. Y.55 C 5. C.7 Y MHC7LS ocument number: S7 Rev. - of pril
10 NE PROUCT NCE INFORMTION MHC7LS IMPORTNT NOTICE IOES INCORPORTE MKES NO RRNTY OF NY KIN, EXPRESS OR IMPLIE, ITH REGRS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE RRNTIES OF MERCHNTBILITY N FITNESS FOR PRTICULR PURPOSE (N THEIR EQUILENTS UNER THE LS OF NY URISICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright, iodes Incorporated MHC7LS ocument number: S7 Rev. - of pril
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FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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