Switch Collector. Switch Emitter. Timing Capacitor

Size: px
Start display at page:

Download "Switch Collector. Switch Emitter. Timing Capacitor"

Transcription

1 MC303A, MC3303A, SC303A, SC3303A, NCV3303A. A, Step-Up/Down/ Inverting Switching Regulators The MC303A Series is a monolithic control circuit containing the primary functions required for DC to DC converters. These devices consist of an internal temperature compensated reference, comparator, controlled duty cycle oscillator with an active current limit circuit, driver and high current output switch. This series was specifically designed to be incorporated in Step Down and Step Up and Voltage Inverting applications with a minimum number of external components. Refer to Application Notes AN90A/D and AN9/D for additional design information. Features Operation from 3.0 V to 0 V Input Low Standby Current Current Limiting Output Switch Current to. A Output Voltage Adjustable Frequency Operation to 00 khz Precision % Reference Pb Free Packages are Available Drive Collector I pk Sense V CC Comparator Inverting Input I pk Oscillator S Q R C T Comparator - 00 (Bottom View) Q. V Reference Regulator Q This device contains 9 active transistors. 3 Switch Collector Switch Emitter Timing Capacitor GND SOIC D SUFFIX CASE PDIP P, P SUFFIX CASE DFN CASE AF x = 3 or A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or = Pb Free Package MARKING DIAGRAMS 3x03 ALYWA 3x03V ALYWA 3x03AP AWL YYWWG 3303AVP AWL YYWWG 3303 ALYWA Figure. Representative Schematic Diagram ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 00 August, 00 Rev. 3 Publication Order Number: MC303A/D

2 Switch Collector Switch Emitter Timing Capacitor GND 3 (Top View) Driver Collector I pk Sense V CC Comparator Inverting Input Switch Collector Switch Emitter Timing Capacitor GND ÇÇ ÇÇ ÇÇ ÇÇ EP Flag (Top View) Ç Ç Ç Ç Driver Collector I pk Sense V CC Comparator Inverting Input Figure. Pin Connections MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage V CC 0 Vdc Comparator Input Voltage Range V IR 0.3 to 0 Vdc Switch Collector Voltage V C(switch) 0 Vdc Switch Emitter Voltage (V Pin = 0 V) V E(switch) 0 Vdc Switch Collector to Emitter Voltage V CE(switch) 0 Vdc Driver Collector Voltage V C(driver) 0 Vdc Driver Collector Current (Note ) I C(driver) 00 ma Switch Current I SW. A Power Dissipation and Thermal Characteristics Plastic Package, P, P Suffix T A = C P D. W Thermal Resistance R JA C/W SOIC Package, D Suffix T A = C P D mw Thermal Resistance R JA 0 C/W DFN Package T A = C P D. mw Thermal Resistance R JA 0 C/W Operating Junction Temperature T J 0 C Operating Ambient Temperature Range T A C MC303A, SC303A 0 to 0 MC3303AV, NCV3303A 0 to MC3303A, SC3303A 0 to Storage Temperature Range T stg to 0 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Maximum package power dissipation limits must be observed.. This device series contains ESD protection and exceeds the following tests: Human Body Model 000 V per MIL STD 3, Method 30. Machine Model Method 00 V. 3. NCV prefix is for automotive and other applications requiring site and change control.

3 ELECTRICAL CHARACTERISTICS (V CC =.0 V, T A = T low to T high [Note ], unless otherwise specified.) Characteristics Symbol Min Typ Max Unit OSCILLATOR Frequency (V Pin = 0 V, C T =.0 nf, T A = C) f osc 33 khz Charge Current (V CC =.0 V to 0 V, T A = C) I chg 3 A Discharge Current (V CC =.0 V to 0 V, T A = C) I dischg A Discharge to Charge Current Ratio (Pin to V CC, T A = C) I dischg /I chg... Current Limit Sense Voltage (I chg = I dischg, T A = C) V ipk(sense) mv OUTPUT SWITCH (Note ) Saturation Voltage, Darlington Connection (I SW =.0 A, Pins, connected) Saturation Voltage (Note ) (I SW =.0 A, R Pin = to V CC, Forced 0) V CE(sat).0.3 V V CE(sat) V DC Current Gain (I SW =.0 A, V CE =.0 V, T A = C) h FE 0 Collector Off State Current (V CE = 0 V) I C(off) A COMPARATOR Threshold Voltage T A = C T A = T low to T high Threshold Voltage Line Regulation (V CC = 3.0 V to 0 V) MC3303, MC303 MC3303V, NCV3303 V th.. Reg line Input Bias Current ( = 0 V) I IB 0 00 na TOTAL DEVICE Supply Current (V CC =.0 V to 0 V, C T =.0 nf, Pin = V CC, V Pin > V th, Pin = GND, remaining pins open) V mv I CC.0 ma. T low = 0 C for MC303, SC303; 0 C for MC3303, SC3303, MC3303V, NCV3303 T high = 0 C for MC303, SC303; C for MC3303, SC3303; C for MC3303V, NCV3303. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible.. If the output switch is driven into hard saturation (non Darlington configuration) at low switch currents ( 300 ma) and high driver currents ( 30 ma), it may take up to.0 s for it to come out of saturation. This condition will shorten the off time at frequencies 30 khz, and is magnified at high temperatures. This condition does not occur with a Darlington configuration, since the output switch cannot saturate. If a non Darlington configuration is used, the following output drive condition is recommended: IC output Forced of output switch : 0 I C driver.0 ma * * The 00 resistor in the emitter of the driver device requires about.0 ma before the output switch conducts. 3

4 I OFF TIME ( s) 0 0 V CC =.0 V, Pin = V CC Pin = GND, T A = C ON TIME ( s) OFF TIME ( s) FREQUENCY (khz) Ct, TIMING CAPACITOR CAPACITANCE (nf) Figure 3. Oscillator Frequency ON TIME ( s), FREQUENCY (khz) OSC, OSCILLATOR VOLTAGE (V) V V CC =.0 V Pin = V CC Pin = GND Pins,, = Open C T =.0 nf T A = C 0 s/div Figure. Timing Capacitor Waveform 00 mv/div CE(sat), SATURATION VOLTAGE (V) V V CC =.0 V. Pins,, = V CC Pins 3, = GND. T A = C (See Note ) I E, EMITTER CURRENT (A) CE(sat), SATURATION VOLTAGE (V) V V CC =.0 V Pin = V CC Pins, 3, = GND T A = C (See Note ) Darlington Connection Forced = I C, COLLECTOR CURRENT(A) Figure. Emitter Follower Configuration Output Saturation Voltage versus Emitter Current Figure. Common Emitter Configuration Output Switch Saturation Voltage versus Collector Current IPK(sense), CURRENT LIMIT SENSE VOLTAGE (V) V V CC =.0 V I chg = I dischg T A, AMBIENT TEMPERATURE ( C) Figure. Current Limit Sense Voltage versus Temperature CC, SUPPLY CURRENT (ma) C T =.0 nf Pin = V CC Pin = GND V CC, SUPPLY VOLTAGE (V) Figure. Standby Supply Current versus Supply Voltage. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible.

5 0 H L 0 S Q Q R Q V R sc V CC - I pk OSC Comp. C T. V Ref Reg 3 C T 00 pf N9 R. k R k.0 H V/ ma 330 C O 00 Optional Filter Test Conditions Results Line Regulation =.0 V to V, I O = ma 30 mv = ±0.0% Load Regulation = V, I O = ma to ma 0 mv = ±0.0% Output Ripple = V, I O = ma 00 mvpp Efficiency = V, I O = ma.% Output Ripple With Optional Filter = V, I O = ma 0 mvpp Figure 9. Step Up Converter

6 R R sc R sc R 0 for constant Figure 0. External Current Boost Connections for I C Peak Greater than. A 9a. External NPN Switch 9b. External NPN Saturated Switch (See Note ). If the output switch is driven into hard saturation (non Darlington configuration) at low switch currents ( 300 ma) and high driver currents ( 30 ma), it may take up to.0 s to come out of saturation. This condition will shorten the off time at frequencies 30 khz, and is magnified at high temperatures. This condition does not occur with a Darlington configuration, since the output switch cannot saturate. If a non Darlington configuration is used, the following output drive condition is recommended.

7 S R Q Q Q R sc 0.33 V 00 V CC I pk OSC - Comp. C T. V Ref Reg N9 3 C L T 0 pf 0 H R. k R 3. k 0 C O.0 V/00 ma.0 H 00 Optional Filter Test Conditions Results Line Regulation = V to V, I O = 00 ma mv = ±0.% Load Regulation = V, I O = 0 ma to 00 ma 3.0 mv = ±0.03% Output Ripple = V, I O = 00 ma 0 mvpp Short Circuit Current = V, R L = 0.. A Efficiency = V, I O = 00 ma 3.% Output Ripple With Optional Filter = V, I O = 00 ma 0 mvpp Figure. Step Down Converter V R sc R sc Figure. External Current Boost Connections for I C Peak Greater than. A a. External NPN Switch b. External PNP Saturated Switch

8 S Q Q R Q R sc 0.. V to.0 V 00 V CC I pk OSC Comp. - C T. V Ref Reg 3 L H 00 pf N9 R. k R f C O.0 H - V/00 ma 00 Optional Filter Test Conditions Results Line Regulation =. V to.0 V, I O = 00 ma 3.0 mv = ±0.0% Load Regulation =.0 V, I O = 0 ma to 00 ma 0.0 V = ±0.09% Output Ripple =.0 V, I O = 00 ma 00 mvpp Short Circuit Current =.0 V, R L = ma Efficiency =.0 V, I O = 00 ma.% Output Ripple With Optional Filter =.0 V, I O = 00 ma 0 mvpp Figure 3. Voltage Inverting Converter 3 3 Figure. External Current Boost Connections for I C Peak Greater than. A 3a. External NPN Switch 3b. External PNP Saturated Switch

9 Figure. Printed Circuit Board and Component Layout (Circuits of Figures 9,, 3) INDUCTOR DATA Converter Inductance ( H) Turns/Wire Step Up 0 3 Turns of # AWG Step Down 0 Turns of # AWG Voltage Inverting Turns of # AWG All inductors are wound on Magnetics Inc. toroidal core. 9

10 Figure. Printed Circuit Board for DFN Device 0

11 Calculation Step Up Step Down Voltage Inverting t on /t off V V F in(min) V (min) sat V F (min) V sat V F V sat (t on t off ) f f f t off ton t off t on t off t on t off t on t off t on t off t on t off t on (t on t off ) t off (t on t off ) t off (t on t off ) t off C T.0 x 0 t on.0 x 0 t on.0 x 0 t on I pk(switch) I out(max) t on t off I out(max) I out(max) t on t off R sc 0.3/I pk(switch) 0.3/I pk(switch) 0.3/I pk(switch) L (min) ((min) V sat ) I pk(switch) t on(max) ((min) V sat ) I pk(switch) t on(max) ((min) V sat ) I pk(switch) t on(max) C O 9 I out t on I (t pk(switch) on t ) off 9 V ripple(pp) V ripple(pp) I out t on V ripple(pp) V sat = Saturation voltage of the output switch. V F = Forward voltage drop of the output rectifier. The following power supply characteristics must be chosen: Nominal input voltage. Desired output voltage, I out Desired output current.. R R f min Minimum desired output switching frequency at the selected values of and I O. V ripple(pp) Desired peak to peak output ripple voltage. In practice, the calculated capacitor value will need to be increased due to its equivalent series resistance and board layout. The ripple voltage should be kept to a low value since it will directly affect the line and load regulation. NOTE: For further information refer to Application Note AN90A/D and AN9/D. Figure. Design Formula Table

12 ORDERING INFORMATION Device Package Shipping MC3303AD SOIC 9 Units / Rail MC3303ADG SOIC 9 Units / Rail MC3303ADR SOIC 00 Units / Tape & Reel MC3303ADRG SC3303ADRG SOIC SOIC 00 Units / Tape & Reel 00 Units / Tape & Reel MC3303AP PDIP 0 Units / Rail MC3303APG PDIP 0 Units / Rail MC3303AVD SOIC 9 Units / Rail MC3303AVDG MC3303AVDR MC3303AVDRG NCV3303AVDR* NCV3303AVDRG* SOIC SOIC SOIC SOIC SOIC 9 Units / Rail 00 Units / Tape & Reel MC3303AVP PDIP 0 Units / Rail MC3303AVPG PDIP 0 Units / Rail MC303AD SOIC 9 Units / Rail MC303ADG SOIC 9 Units / Rail MC303ADR SOIC 00 Units / Tape & Reel MC303ADRG SC303ADRG SOIC SOIC 00 Units / Tape & Reel 00 Units / Tape & Reel MC303AP PDIP 0 Units / Rail MC303APG PDIP 0 Units / Rail SC303APG PDIP 0 Units / Rail MC3303MNTXG DFN 000 Units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD0/D. *NCV3303A: T low = 0 C, T high = C. Guaranteed by design. NCV prefix is for automotive and other applications requiring site and change control.

13 PACKAGE DIMENSIONS X B Y A S 0. (0.00) M Y M SOIC NB CASE 0 ISSUE AJ K NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9.. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.. MAXIMUM MOLD PROTRUSION 0. (0.00) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0. (0.00) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.. 0 THRU 0 ARE OBSOLETE. NEW STANDARD IS 0. Z H G D C 0. (0.00) M Z Y S X S SEATING PLANE 0.0 (0.00) N X M J MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G. BSC 0.00 BSC H J K M 0 0 N S SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3

14 PACKAGE DIMENSIONS PDIP P, P SUFFIX CASE 0 ISSUE M D D A E NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.M, 99.. CONTROLLING DIMENSION: INCHES. 3. DIMENSION E IS MEASURED WITH THE LEADS RE- STRAINED PARALLEL AT WIDTH E.. DIMENSION E DOES NOT INCLUDE MOLD FLASH.. ROUNDED CORNERS OPTIONAL. NOTE F TOP VIEW e/ A E c E END VIEW NOTE 3 INCHES DIM MIN NOM MAX A 0.0 A 0.0 b C D D 0.00 E MILLIMETERS MIN NOM MAX E E BSC. BSC E e 0.00 BSC. BSC L L A e SIDE VIEW C SEATING PLANE X b 0.00 M C A E3 END VIEW

15 PACKAGE DIMENSIONS DFN, x CASE AF 0 ISSUE C X X PIN ONE REFERENCE X NOTE D ÉÉÉ ÉÉÉ C C C C TOP VIEW DETAIL B (A3) A SIDE VIEW A B E A C SEATING PLANE L EXPOSED Cu L DETAIL A OPTIONAL CONSTRUCTIONS MOLD CMPD A DETAIL B ALTERNATE CONSTRUCTIONS L ÇÇ A3 NOTES:. DIMENSIONS AND TOLERANCING PER ASME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0. AND 0.30MM FROM TERMINAL TIP.. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.. DETAILS A AND B SHOW OPTIONAL CONSTRUCTIONS FOR TERMINALS. MILLIMETERS DIM MIN MAX A A A3 0.0 REF b D.00 BSC D.9. E.00 BSC E e 0.0 BSC K 0.0 L L 0. DETAIL A D X L SOLDERING FOOTPRINT*. X 0.3 E K e BOTTOM VIEW X b 0.0 C 0.0 C A B NOTE PITCH X 0.3 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SENSEFET is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 3, Denver, Colorado 0 USA Phone: 303 or Toll Free USA/Canada Fax: 303 or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 00 9 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MC303A/D

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators MC0A, MC0A, NCV0A. A, StepUp/Down/ Inverting Switching Regulators The MC0A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices consist

More information

V N (8) V N (7) V N (6) GND (5)

V N (8) V N (7) V N (6) GND (5) 4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level

More information

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol

More information

onlinecomponents.com

onlinecomponents.com MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5401. PNP Silicon. These are Pb Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage

More information

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase

More information

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface

More information

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power

More information

SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY

SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY of 0 Decoder/Driver Open Collector The SN74LS45, -of-0 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 0-digit incandescent displays. All outputs remain off for

More information

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the

More information

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

More information

MC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger

MC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger MC74AC32, MC74ACT32 Quad 2 Input NAND Schmitt Trigger The MC74AC/74ACT32 contains four 2 input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter free

More information

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features

More information

NE522 High Speed Dual Differential Comparator/Sense Amp

NE522 High Speed Dual Differential Comparator/Sense Amp HighSpeed DualDifferential Comparator/Sense Amp Features 5 ns Maximum Guaranteed Propagation Delay 0 A Maximum Input Bias Current TTL-Compatible Strobes and Outputs Large Common-Mode Input oltage Range

More information

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices.  Features MAXIMUM RATINGS BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage

More information

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage

More information

SN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY

SN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY Quad 2 Input Multiplexer The LSTTL/ MSI is a high speed Quad 2-Input Multiplexer. Four bits of data from two sources can be selected using the common Select and Enable inputs. The four buffered outputs

More information

SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY

SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY Quad 2 Input Schmitt Trigger NAND Gate The SN74LS32 contains four 2-Input NAND Gates which accept standard TTL input signals and provide standard TTL output levels. They are capable of transforming slowly

More information

NLSV2T Bit Dual-Supply Inverting Level Translator

NLSV2T Bit Dual-Supply Inverting Level Translator 2-Bit Dual-Supply Inverting Level Translator The NLSV2T240 is a 2 bit configurable dual supply voltage level translator. The input A n and output B n ports are designed to track two different power supply

More information

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both

More information

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC336 is designed for general purpose, low power applications for consumer and industrial designs.

More information

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS MARKING DIAGRAM High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter

More information

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88 NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class

More information

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering

More information

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.

More information

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.

More information

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general

More information

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector

More information

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise

More information

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control

More information

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS PMT90B Series. Watt Plastic Surface Mount POWERMITE Package This complete new line of. Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat

More information

2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)

2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1) N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector

More information

MC Bit Magnitude Comparator

MC Bit Magnitude Comparator Bit Magnitude Comparator The MC0 is a high speed expandable bit comparator for comparing the magnitude of two binary words. Two outputs are provided: and. A = B can be obtained by NORing the two outputs

More information

AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View )

AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View ) UNIVERSAL DC/DC CONVERTER Description Pin Assignments The Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal

More information

NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj

NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance

More information

NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj

NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance

More information

NGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj

NGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj NGTGNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching

More information

74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS

74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS of 8 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The 74HC38 is identical in pinout to the LS38. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are

More information

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS 2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation

More information

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are

More information

MC1403, B. Low Voltage Reference PRECISION LOW VOLTAGE REFERENCE

MC1403, B. Low Voltage Reference PRECISION LOW VOLTAGE REFERENCE Low Voltage Reference A precision bandgap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to bits in accuracy,

More information

0.016 W/ C to +150 C

0.016 W/ C to +150 C MJF00 (NPN), MJF0 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general purpose amplifier and switching applications, where the mounting surface of the device is

More information

NL17SZ08. Single 2-Input AND Gate

NL17SZ08. Single 2-Input AND Gate N7SZ08 Single 2-Input AND Gate The N7SZ08 is a single 2 input AND Gate in two tiny footprint packages. The device performs much as CX multi gate products in speed and drive. They should be used wherever

More information

NCS1002A. Constant Voltage / Constant Current Secondary Side Controller

NCS1002A. Constant Voltage / Constant Current Secondary Side Controller NCS00A Constant Voltage / Constant Current Secondary Side Controller Description The NCS00A is a performance upgrade from the NCS00 focused on reducing power consumption in applications that require more

More information

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features. Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter

More information

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM 2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140

More information

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS , Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.

More information

BC846ALT1 Series. General Purpose Transistors. NPN Silicon

BC846ALT1 Series. General Purpose Transistors. NPN Silicon BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages

More information

NTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)

NTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.) NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector

More information

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 4, 4, 41, 42, 44, 46 42 and 46 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling

More information

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for

More information

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available*   Features MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO

More information

NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m

NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features

More information

2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N4403. PNP Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector

More information

NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator

NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track

More information

MC74HC132A. Quad 2 Input NAND Gate with Schmitt Trigger Inputs. High Performance Silicon Gate CMOS

MC74HC132A. Quad 2 Input NAND Gate with Schmitt Trigger Inputs. High Performance Silicon Gate CMOS Quad 2 Input NAND Gate with Schmitt Trigger Inputs High Performance Silicon Gate CMOS The is identical in pinout to the LS32. The device inputs are compatible with standard CMOS outputs; with pull up resistors,

More information

SN74LS151MEL. 8 Input Multiplexer LOW POWER SCHOTTKY

SN74LS151MEL. 8 Input Multiplexer LOW POWER SCHOTTKY 8 Input Multiplexer The TTL/MSI SN74LS5 is a high speed 8-input Digital Multiplexer. It provides, in one package, the ability to select one bit of data from up to eight sources. The LS5 can be used as

More information

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,

More information

SN74LS147, SN74LS Line to 4 Line and 8 Line to 3 Line Priority Encoders LOW POWER SCHOTTKY

SN74LS147, SN74LS Line to 4 Line and 8 Line to 3 Line Priority Encoders LOW POWER SCHOTTKY 0 Line to Line and 8 Line to 3 Line Priority Encoders The SN7LS7 and the SN7LS8 are Priority Encoders. They provide priority decoding of the inputs to eure that only the highest order data line is encoded.

More information

LOW POWER SCHOTTKY. ESD > 3500 Volts. GUARANTEED OPERATING RANGES ORDERING INFORMATION V CC 8 7 GND

LOW POWER SCHOTTKY. ESD > 3500 Volts.  GUARANTEED OPERATING RANGES ORDERING INFORMATION V CC 8 7 GND ESD > 3500 Volts V CC 8 4 3 2 0 9 LOW POWER SCHOTTKY 2 3 4 5 6 7 GND GUARANTEED OPERATING RANGES Symbol Parameter Min Typ Max Unit V CC Supply Voltage 4.75 5.0 5.25 V T A Operating Ambient Temperature

More information

MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.

MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available. LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage

More information

FST Bit Bus Switch

FST Bit Bus Switch FST32 4-Bit Bus Switch The ON Semiconductor FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and adds

More information

MC14584B. Hex Schmitt Trigger

MC14584B. Hex Schmitt Trigger MC4584B Hex Schmitt Trigger The MC4584B Hex Schmitt Trigger is constructed with MOS Pchannel and Nchannel enhancement mode devices in a single monolithic structure. These devices find primary use where

More information

MC10E171, MC100E171. 5VНECL 3-Bit 4:1 Multiplexer

MC10E171, MC100E171. 5VНECL 3-Bit 4:1 Multiplexer 5VНECL 3-Bit 4:1 Multiplexer Description The MC10E/100E171 contains three 4:1 multiplexers with differential outputs. Separate Select controls are provided for the leading pairs (see logic symbol). The

More information

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*   Features MAXIMUM RATINGS MARKING DIAGRAM , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value

More information

MC100LVE VНECL 16:1 Multiplexer

MC100LVE VНECL 16:1 Multiplexer 3.3VНECL 16:1 Multiplexer The is a 16:1 multiplexer with a differential output. The select inputs (SEL0, 1, 2, 3 ) control which one of the sixteen data inputs (A0 A15) is propragated to the output. The

More information

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS MARKING DIAGRAM Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base

More information

NTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A

NTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A NTMFDCN PowerPhase, Dual N-Channel SOFL V, High Side A / Low Side 9 A Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power

More information

NL17SH02. Single 2-Input NOR Gate

NL17SH02. Single 2-Input NOR Gate N7S0 Single -Input NOR Gate The N7S0 MiniGate is an advanced high speed CMOS input NOR gate in ultra small footprint. The N7S0 input structures provide protection when voltages up to 7.0 are applied, regardless

More information

MC74AC138, MC74ACT of 8 Decoder/Demultiplexer

MC74AC138, MC74ACT of 8 Decoder/Demultiplexer 1 of 8 Decoder/Demultiplexer The MC74AC138/74ACT138 is a high speed 1 of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple

More information

NCP ma, Wide Input Range, Voltage Regulator

NCP ma, Wide Input Range, Voltage Regulator NCP6 5 ma, Wide Input Range, Voltage Regulator The NCP6 is a CMOS 5 ma linear voltage regulator with high input voltage and ultra low supply current. It incorporates multiple protection features such as

More information

PN2907 / MMBT2907 PNP General-Purpose Transistor

PN2907 / MMBT2907 PNP General-Purpose Transistor PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.

More information

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION

LOW POWER SCHOTTKY.   GUARANTEED OPERATING RANGES ORDERING INFORMATION These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance values. The LS22 has an internal

More information

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.) NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are

More information

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES MMBVLT Series, MV5, MV, MV9, LV9 Preferred evice Silicon Tuning iodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

More information

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features

More information

NGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj

NGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching

More information

MC74VHC14. Hex Schmitt Inverter

MC74VHC14. Hex Schmitt Inverter MC74HC4 Hex Schmitt Inverter The MC74HC4 is an advanced high speed CMOS Schmitt inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky

More information

74HCT245. Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs. High-Performance Silicon-Gate CMOS

74HCT245. Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs. High-Performance Silicon-Gate CMOS Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs High-Performance Silicon-Gate CMOS The 74HCT245 is identical in pinout to LS245. The device has TTL-Compatible Inputs. The HCT245

More information

2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS

2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS 2N4918-2N492 Series Medium-Power Plastic PNP Silicon Transistors These mediumpower, highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low

More information

MC14049B, MC14050B. Hex Buffer

MC14049B, MC14050B. Hex Buffer MC404B, MC4050B Hex Buffer The MC404B Hex Inverter/Buffer and MC4050B Noninverting Hex Buffer are constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. These

More information

SN74LS125A, SN74LS126A. Quad 3 State Buffers LOW POWER SCHOTTKY. LS125A LS126A TRUTH TABLES ORDERING INFORMATION

SN74LS125A, SN74LS126A. Quad 3 State Buffers LOW POWER SCHOTTKY.   LS125A LS126A TRUTH TABLES ORDERING INFORMATION Quad 3 State Buffers V CC E D O E D O 4 3 2 0 9 8 LOW POWER SCHOTTKY 2 3 4 5 6 E D O E D O LS25A GND V CC E D O E D O 4 3 2 0 9 8 4 PLASTIC N SUFFIX CASE 646 LS25A INPUTS 2 3 4 5 6 E D O E LS26A D O GND

More information

MC10E163, MC100E163. 5VНECL 2-Bit 8:1 Multiplexer

MC10E163, MC100E163. 5VНECL 2-Bit 8:1 Multiplexer 5VНECL 2-Bit 8:1 Multiplexer Description The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs (SEL0, 1, 2) control which one of the eight

More information

NL17SV16. Ultra-Low Voltage Buffer

NL17SV16. Ultra-Low Voltage Buffer N7S6 Ultra-ow oltage Buffer The N7S6X5T is an ultra high performance single Buffer fabricated in sub micron silicon gate 0.35 m technology with excellent performance down to 0.9. This device is ideal for

More information

MC74AC109, MC74ACT109. Dual JK Positive Edge Triggered Flip Flop

MC74AC109, MC74ACT109. Dual JK Positive Edge Triggered Flip Flop MC9, MC9 Dual JK Positive EdgeTriggered FlipFlop The MC9/9 coists of two highspeed completely independent traition clocked JK flipflops. The clocking operation is independent of rise and fall times of

More information

NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit

NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit

More information

74FST Bit Bus Switch

74FST Bit Bus Switch 4FST32 4 Bit Bus Switch The ON Semiconductor 4FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and

More information

NL37WZ07. Triple Buffer with Open Drain Outputs

NL37WZ07. Triple Buffer with Open Drain Outputs Triple Buffer with Open Drain Outputs The N7WZ7 is a high performance triple buffer with open drain outputs operating from a.6 to. supply. The internal circuit is composed of multiple stages, including

More information

BAT54XV2 Schottky Barrier Diode

BAT54XV2 Schottky Barrier Diode June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1

More information

NL27WZ08. Dual 2-Input AND Gate. The NL27WZ08 is a high performance dual 2 input AND Gate operating from a 1.65 V to 5.5 V supply.

NL27WZ08. Dual 2-Input AND Gate. The NL27WZ08 is a high performance dual 2 input AND Gate operating from a 1.65 V to 5.5 V supply. N27WZ Dual 2-Input AND Gate The N27WZ is a high performance dual 2 input AND Gate operating from a.6 to. supply. Features Extremely igh Speed: t PD 2. ns (typical) at = Designed for.6 to. Operation Over

More information

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-

More information

NL27WZ14. Dual Schmitt Trigger Inverter

NL27WZ14. Dual Schmitt Trigger Inverter N7WZ Dual Schmitt Trigger Inverter The N7WZ is a high performance dual inverter with Schmitt Trigger inputs operating from a.5 to supply. Pin configuration and function are the same as the N7WZ0, but the

More information

NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL

NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized

More information

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor November 204 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC546, V CEO = 65 V Low-Noise: BC549, BC550 Complement to BC556, BC557,

More information

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.

More information

74HC244 Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver

74HC244 Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver High Performance Silicon Gate CMOS The is identical in pinout to the LS244. The device inputs are compatible with standard CMOS outputs; with

More information

74HCT32. Quad 2 Input OR Gate with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS

74HCT32. Quad 2 Input OR Gate with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS Quad 2 Input OR Gate with STT Compatible Inputs igh Performance Silicon Gate CMOS The 74CT32 is identical in pinout to the S32. The device has TT compatible inputs. Features Output Drive Capability: 0

More information

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

2N7002DW N-Channel Enhancement Mode Field Effect Transistor 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

More information