SDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
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1 Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for high isolation levels while maintaining low-level DC signal control capability. The provides an optically isolated method of controlling many interface applications such as telecommunications, industrial control and instrumentation circuitry. The comes standard in a miniature 8 pin DIP package. Applications Registers, Copiers, Automatic Vending Machines System Appliances, Measuring Instruments Computer Terminals, PLCs Telecommunication Equipment, Telephones Home Appliances Digital Logic Inputs Microprocessor Inputs Switching Power Supplies Schematic Diagram Features V CEO = Small 8 pin DIP/SMD package Low input power consumption High stability CTR Range % High Isolation Voltage (5000V RMS ) Long Life / High Reliability RoHS / Pb-Free / REACH Compliant Agency Approvals UL/C-UL: File # E VDE: File # (EN ) Absolute Maximum Ratings The values indicated are absolute stress ratings. Functional operation of the device is not implied at these or any conditions in excess of those defined in electrical characteristics section of this document. Exposure to absolute Maximum Ratings may cause permanent damage to the device and may adversely affect reliability. Storage Temperature..-55 to +125 C Operating Temperature -40 to +100 C Continuous Input Current..50mA Transient Input Current...500mA Reverse Input Control Voltage.. 6V Input Power Dissipation 1 40mW Total Power Dissipation mW Solder Temperature Wave (10sec)..260 C Solder Temperature IR Reflow (10sec) C NOTES 1. Power Dissipation per Channel Ordering Information Part Number -H -S -STR Description 8 pin DIP, (50/Tube) 0.40 (10.16mm) Lead Spacing (VDE0884) 8 pin SMD, (50/Tube) 8 pin SMD, Tape and Reel (1000/Reel) NOTE: Suffixes listed above are not included in marking on device for part number identification Page 1 of 10 /H/S/TR
2 Electrical Characteristics, T A = 25 C (unless otherwise specified) Parameter Symbol Min. Typ. Max. Units Test Conditions Input Specifications LED Forward Voltage V F V I F = 20mA LED Reverse Voltage BV R V I R = 10μA Terminal Capacitance C t pf V=0, f=1khz Input Reverse Current I R A V R =4V Output Specifications Collector-Emitter Voltage V CEO V I C =10A Emitter-Collector Voltage V COE V I E =10A Collector Dark Current I CEO na V CE =20V Floating Capacitance C f pf V CE =0, f=1mhz Cut-Off Frequency f C khz V CE =5V, I C =2mA, R L =100-3dB Saturation Voltage V CE(sat) V I F =20mA, I C =1mA Coupled Specifications Rise Time T R S I C =2mA, V CC =2V, R L =100 Fall Time T F S I C =2mA, V CC =2V, R L =100 Current Transfer Ratio CTR % I F =5mA, V CE =5V CTR Classification (BINNING) - A % I F =5mA, V CE =5V - B % I F =5mA, V CE =5V - C % I F =5mA, V CE =5V - D % I F =5mA, V CE =5V - E % I F =5mA, V CE =5V Isolation Specifications Isolation Voltage V ISO V RMS RH 50%, t=1min Input-Output Resistance R I-O V I-O = 500V DC Test Circuit: Response Time Test Circuit: Frequency Response Page 2 of 10 /H/S/TR
3 Performance & Characteristics Plots, T A = 25 C (unless otherwise specified) Figure 1: Forward Current (I F ) vs. Temperature ( C) Figure 2: Collector Power Dissipation (P C ) vs. Temperature ( C) Figure 3: Collector-Emitter Saturation Voltage (V CE(SAT) ) vs. Forward Current (I F ) Figure 4: Forward Current (I F ) vs. Forward Voltage (V F ) Figure 5: Collector Current (I C ) vs. Collector-Emitter Voltage (V CE ) Figure 6: Current Transfer Ratio (CTR) vs. Forward Current (I F ) Page 3 of 10 /H/S/TR
4 Performance & Characteristics Plots, T A = 25 C (unless otherwise specified) Figure 7: Relative CTR (%) vs. Temperature ( C) Figure 8: Collector-Emitter Saturation Voltage (V CE(SAT) ) vs. Temperature ( C) Figure 9: Collector Dark Current (I CEO ) vs. Temperature ( C) Figure 10: Response Times vs. Load Resistance (R L ) Figure 11: Frequency Response Characteristics Page 4 of 10 /H/S/TR
5 Solder Reflow Temperature Profile Recommendations (1) Infrared Reflow: Refer to the following figure as an example of an optimal temperature profile for single occurrence infrared reflow. Soldering process should not exceed temperature or time limits expressed herein. Surface temperature of device package should not exceed 250ºC: G F D B A E H C Process Step Description A Preheat Start Temperature (ºC) 150ºC B Preheat Finish Temperature (ºC) 180ºC C Preheat Time (s) s D Melting Temperature (ºC) 230ºC E Time above Melting Temperature (s) 30s F Peak Temperature, at Terminal (ºC) 260ºC G Dwell Time at Peak Temperature (s) 10s H Cool-down (ºC/s) <6ºC/s Parameter (2) Wave Solder: Maximum Temperature: 260ºC (at terminal) Maximum Time: 10s Pre-heating: ºC (30-90s) Single Occurrence (3) Hand Solder: Maximum Temperature: 350ºC (at tip of soldering iron) Maximum Time: 3s Single Occurrence Page 5 of 10 /H/S/TR
6 Package Dimensions 8 PIN DIP Package Note: All dimensions in millimeters [mm] with inches in parenthesis () Page 6 of 10 /H/S/TR
7 Package Dimensions 8 PIN WIDE Lead Space Package (-H) Note: All dimensions in millimeters [mm] with inches in parenthesis () Page 7 of 10 /H/S/TR
8 Package Dimensions 8 PIN SMD Surface Mount Package (-S) Note: All dimensions in millimeters [mm] with inches in parenthesis () Page 8 of 10 /H/S/TR
9 Packaging Specifications Tape & Reel Specifications (T&R) Note: All dimensions in millimeters [mm] with inches in parenthesis () Specification Symbol Dimensions, mm ( inches ) Tape Width W ( 0.63 ) Sprocket Hole Pitch P ( 0.15 ) Compartment Location F P ( ) ( ) Compartment Pitch P ( ) Page 9 of 10 /H/S/TR
10 Packaging Marking DISCLAIMER Solid State Optronics (SSO) makes no warranties or representations with regards to the completeness and accuracy of this document. SSO reserves the right to make changes to product description, specifications at any time without further notices. SSO shall not assume any liability arising out of the application or use of any product or circuit described herein. Neither circuit patent licenses nor indemnity are expressed or implied. Except as specified in SSO s Standard Terms & Conditions, SSO disclaims liability for consequential or other damage, and we make no other warranty, expressed or implied, including merchantability and fitness for particular use. LIFE SUPPORT POLICY SSO does not authorize use of its devices in life support applications wherein failure or malfunction of a device may lead to personal injury or death. Users of SSO devices in life support applications assume all risks of such use and agree to indemnify SSO against any and all damages resulting from such use. Life support devices are defined as devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when used properly in accordance with instructions for use can be reasonably expected to result in significant injury to the user, or (d) a critical component of a life support device or system whose failure can be reasonably expected to cause failure of the life support device or system, or to affect its safety or effectiveness. Page 10 of 10 /H/S/TR
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DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
Logic Configuration Part Number Package Type Packing Method Quantity. IX4423N 8-Pin SOIC Tube 100 IX4423NTR 8-Pin SOIC Tape & Reel 2000
IX23-IX2-IX25 3-mpere Dual Low-Side Ultrafast MOSFET Drivers Features 3 Peak Output Current Wide Operating Voltage Range:.5V to 35V - C to +25 C Operating Temperature Range Latch-up Protected to 3 Fast
150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor
Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted
H11AA1, H11AA3, H11AA2, H11AA4 AC Input/Phototransistor Optocouplers
HAA, HAA3, HAA2, HAA4 AC Input/Phototransistor Optocouplers Features Bi-polar emitter input Built-in reverse polarity input protection Underwriters Laboratory (UL) recognized File #E90700 VDE approved
Package Type. IXDD614PI 8-Pin DIP Tube 50 OUT 8-Lead Power SOIC with Exposed Metal Back Tube 100
IXD_64 4-Ampere Low-Side Ultrafast MOSFET Drivers Features 4A Peak Source/Sink Drive Current Wide Operating Voltage Range: 4.V to V - C to +2 C Extended Operating Temperature Range Logic Input Withstands
QT-Brightek High Power Series. 0.5W High Power 2835 LED
QT-Brightek High Power Series 0.5W High Power 2835 LED Part No.: QBHP686-XXH Series XX = Color Code H = 150mA Product: QBHP686-XXH Series Date: June 20, 2017 Page 1 of 12 Tablet of Contents: Introduction...
KB The KB8441 (4-channel) is optically coupled isolators containing two GaAs light emitting diode and a darlington silicon phototransistor.
GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH SENSITIVITY PHOTOCOUPLER SERIES FEATURES 1. AC Input. 2. High current transfer ratio.(ctr:min 6%,at I F =±1mA,V CE =2V) 3. High isolation voltage between input
QT-Brightek SMD Super Thin Display Series Single Digit Display
QT-Brightek SMD Super Thin Display Series 0.56 Single Digit Display Part No.: QBSST56ZXX-R XX= Color Z= 1: Common Cathode Z = 0: Common Anode -R= Reverse Mount Product: QBSST56ZXX-R Date: January 16, 2017
DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors
SY10/100EL11V. General Description. Precision Edge. Features. Pin Names. 5V/3.3V 1:2 Differential Fanout Buffer. Revision 10.0
SY10/100EL11 5/3.3 1:2 Differential Fanout Buffer Revision 10.0 General Description The SY10/100EL11 are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with
IX4340NE. Automotive Grade 5-Ampere, Dual Low-Side MOSFET Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications
Automotive Grade -Ampere, Dual Low-Side MOSFET Driver Features AEC-Q100 qualified Two independent drivers, each capable of sourcing and sinking A V to 20V supply voltage range AEC-Q100 Grade 1-0 C to +12
CD4071BC CD4081BC Quad 2-Input OR Buffered B Series Gate Quad 2-Input AND Buffered B Series Gate
Quad 2-Input OR Buffered B Series Gate Quad 2-Input AND Buffered B Series Gate General Description The CD4071BC and CD4081BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed
MM74C85 4-Bit Magnitude Comparator
4-Bit Magnitude Comparator General Description The MM74C85 is a four-bit magnitude comparator which will perform comparison of straight binary or BCD codes. The circuit consists of eight comparing inputs
BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
MM74HC00 Quad 2-Input NAND Gate
MM74HC00 Quad 2-Input NAND Gate General Description The MM74HC00 NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
MM74HC32 Quad 2-Input OR Gate
Quad 2-Input OR Gate General Description The MM74HC32 OR gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard
MM74C90 MM74C93 4-Bit Decade Counter 4-Bit Binary Counter
4-Bit Decade Counter 4-Bit Binary Counter General Description The MM74C90 decade counter and the MM74C93 binary counter and complementary MOS (CMOS) integrated circuits constructed with N- and P-channel
MM74C908 Dual CMOS 30-Volt Relay Driver
Dual CMOS 30-Volt Relay Driver General Description The MM74C908 is a general purpose dual high voltage driver capable of sourcing a minimum of 250 ma at V OUT = V CC 3V, and T J = 65 C. The MM74C908 consists
NC7SB3157 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary)
September 1999 Revised November 1999 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary) General Description The is a high performance, Analog Switch 2- channel CMOS
BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA
NPN Transistor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and
CD4013BC Dual D-Type Flip-Flop
Dual D-Type Flip-Flop General Description The CD4013B dual D-type flip-flop is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement mode transistors. Each
MM74HC154 4-to-16 Line Decoder
4-to-16 Line Decoder General Description The MM74HC154 decoder utilizes advanced silicon-gate CMOS technology, and is well suited to memory address decoding or data routing applications. It possesses high
4N35/ 4N36/ 4N37. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.
Optocoupler with Phototransistor Output Description The 4N35/ 4N36/ 4N37 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.