4N25 4N26 4N27 4N28. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SCHEMATIC. Order this document by 4N25/D STANDARD THRU HOLE
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1 Order this document by N/D GlobalOptoisolator The N, N, N7 and N8 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most Economical Optoisolator Choice for Medium Speed, Switching Applications Meets or Exceeds All JEDEC Registered Specifications To order devices that are tested and marked per VDE 088 requirements, the suffix V must be included at end of part number. VDE 088 is a test option. Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances I/O Interfacing Solid State Relays MAXIMUM RATINGS (TA = C unless otherwise noted) Rating Symbol Value Unit INPUT LED Reverse Voltage VR 3 Volts Forward Current Continuous IF 0 ma LED Power TA = C with Negligible Power in Output Detector Derate above C PD 0. mw mw/ C OUTPUT TRANSISTOR Collector Emitter Voltage VCEO 30 Volts Emitter Collector Voltage VECO 7 Volts Collector Base Voltage VCBO 70 Volts Collector Current Continuous IC 0 ma Detector Power TA = C with Negligible Power in Input LED Derate above C PD 0.7 mw mw/ C 3 N N N7 N8 STANDARD THRU HOLE SCHEMATIC PIN. LED ANODE. LED CATHODE 3. N.C.. EMITTER. COLLECTOR. BASE TOTAL DEVICE Isolation Surge Voltage() (Peak ac Voltage, 0 Hz, sec Duration) VISO 700 Vac(pk) Total Device Power TA = C Derate above C PD 0.9 mw mw/ C Ambient Operating Temperature Range TA to +00 C Storage Temperature Range Tstg to +0 C Soldering Temperature (0 sec, / from case) TL 0 C. Isolation surge voltage is an internal device dielectric breakdown rating.. For this test, Pins and are common, and Pins, and are common.
2 N N N7 N8 ELECTRICAL CHARACTERISTICS (TA = C unless otherwise noted)() INPUT LED Characteristic Symbol Min Typ() Max Unit Forward Voltage (IF = 0 ma) TA = C TA = C TA = 00 C VF Reverse Leakage Current (VR = 3 V) IR 00 µa Capacitance (V = 0 V, f = MHz) CJ 8 pf Volts OUTPUT TRANSISTOR Collector Emitter Dark Current (VCE = 0 V, TA = C N,,7 N8 ICEO 0 00 na (VCE = 0 V, TA = 00 C) All Devices ICEO µa Collector Base Dark Current (VCB = 0 V) ICBO 0. na Collector Emitter Breakdown Voltage (IC = ma) V(BR)CEO 30 Volts Collector Base Breakdown Voltage (IC = 00 µa) V(BR)CBO Volts Emitter Collector Breakdown Voltage (IE = 00 µa) V(BR)ECO Volts DC Current Gain (IC = ma, VCE = V) hfe 00 Collector Emitter Capacitance (f = MHz, VCE = 0) CCE 7 pf Collector Base Capacitance (f = MHz, VCB = 0) CCB 9 pf Emitter Base Capacitance (f = MHz, VEB = 0) CEB 9 pf COUPLED Output Collector Current (IF = 0 ma, VCE = 0 V) N, N7,8 IC (CTR)() (0) (0) 7 (70) (0) Collector Emitter Saturation Voltage (IC = ma, IF = 0 ma) VCE(sat) Volts Turn On Time (IF = 0 ma, VCC = 0 V, RL = 00 Ω)(3) ton.8 µs Turn Off Time (IF = 0 ma, VCC = 0 V, RL = 00 Ω)(3) toff. µs Rise Time (IF = 0 ma, VCC = 0 V, RL = 00 Ω)(3) tr. µs Fall Time (IF = 0 ma, VCC = 0 V, RL = 00 Ω)(3) tf.3 µs ma (%) Isolation Voltage (f = 0 Hz, t = sec)() VISO 700 Vac(pk) Isolation Resistance (V = 00 V)() RISO 0 Ω Isolation Capacitance (V = 0 V, f = MHz)() CISO 0. pf. Always design to the specified minimum/maximum electrical limits (where applicable).. Current Transfer Ratio (CTR) = IC/IF x 00%. 3. For test circuit setup and waveforms, refer to Figure.. For this test, Pins and are common, and Pins, and are common.
3 I N N N7 N8 TYPICAL CHARACTERISTICS VF, FORWARD VOLTAGE (VOLTS).8... TA = C PULSE ONLY PULSE OR DC C 00 C IF, LED FORWARD CURRENT (ma) IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) 0 0. NORMALIZED TO: IF = 0 ma Figure. LED Forward Voltage versus Forward Current Figure. Output Current versus Input Current IC, COLLECTOR CURRENT (ma) 8 IF = 0 ma 0 ma 8 ma ma VCE, COLLECTOR EMITTER VOLTAGE (VOLTS), OUTPUT COLLECTOR CURRENT (NORMALIZED) IC NORMALIZED TO TA = C TA, AMBIENT TEMPERATURE ( C) Figure 3. Collector Current versus Collector Emitter Voltage Figure. Output Current versus Ambient Temperature, COLLECTOR EMITTER DARK CURRENT (NORMALIZED) CEO 00 0 NORMALIZED TO: VCE = 0 V TA = C VCE = 30 V 0 V TA, AMBIENT TEMPERATURE ( C) Figure. Dark Current versus Ambient Temperature t, TIME ( µ s) RL = 000 RL = 00{ tf tr tr { Figure. Rise and Fall Times (Typical Values) VCC = 0 V tf
4 N N N7 N VCC = 0 V VCC = 0 V t on, TURN ON TIME ( µ s) RL = t off, TURN OFF TIME ( µ s) RL = Figure 7. Turn On Switching Times (Typical Values) Figure 8. Turn Off Switching Times (Typical Values) I C, TYPICAL COLLECTOR CURRENT (ma) IF = 0 IB = 7 µa µa 3 µa µa 3 µa µa µa VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain (Detector Only) C, CAPACITANCE (pf) 0 8 CLED f = MHz CCB 0 8 CEB CCE V, VOLTAGE (VOLTS) Figure 0. Capacitances versus Voltage TEST CIRCUIT VCC = 0 V WAVEFORMS INPUT PULSE IF = 0 ma RL = 00 Ω INPUT OUTPUT 0% 90% OUTPUT PULSE ton tr tf toff Figure. Switching Time Test Circuit and Waveforms
5 N N N7 N8 PACKAGE DIMENSIONS A 3 B NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. T SEATING PLANE F PL E PL N C L K G M D PL 0.3 (0.00) M T A M B M J PL 0.3 (0.00) M T B M A M INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G 0.00 BSC. BSC J K L BSC 7. BSC M 0 0 N STYLE : PIN. ANODE. CATHODE 3. NC. EMITTER. COLLECTOR. BASE THRU HOLE A 3 B NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH. F PL E PL G H D PL C L K PL 0.3 (0.00) M T A M B M J T SEATING PLANE 0.3 (0.00) M T B M A M SURFACE MOUNT INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G 0.00 BSC. BSC H J K L 0.30 BSC 8.3 BSC S *Consult factory for leadform option availability
6 N N N7 N8 F PL T SEATING PLANE A B 3 N C G K L J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G 0.00 BSC. BSC J K L N D PL E PL 0.3 (0.00) M T A M B M *Consult factory for leadform option availability 0." LEAD SPACING
7 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Fairchild Semiconductor Corporation
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