CNY17 Series. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards.
|
|
- Gervase Potter
- 6 years ago
- Views:
Transcription
1 Optocoupler with Phototransistor Output Description The CNY7 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I IV at mains voltage 3 V For appl. class I III at mains voltage 6 V according to VDE 884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface B C E VDE Standards These couplers perform safety functions according to the following equipment standards: VDE 884 Optocoupler for electrical safety requirements IEC 95/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 V RMS ) VDE 84 Telecommunication apparatus and data processing IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction 2 3 A (+) C ( ) n.c Ordering Code CTR Ranking Remarks CNY7 / CNY7G ) 4 to 8% CNY7 2/ CNY7G 2 ) 63 to 25% CNY7 3/ CNY7G 3 ) to 2% CNY7 4/ CNY7G 4 ) 6 to 32% ) G = Leadform.6 mm; G is not market on the body 8 Rev. A3, Jan 99
2 Features Approvals: BSI: BS EN 43, BS EN 695 (BS 45), BS EN 695 (BS 72), Certificate number 78 and 742 FIMKO (SETI): EN 695, Certificate number 2399 Underwriters Laboratory (UL) 577 recognized, file number E VDE 884, Certificate number VDE 884 related features: Rated impulse voltage (transient overvoltage) V IOTM = 6 kv peak Isolation test voltage (partial discharge test voltage) V pd =.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS (848 V peak) Rated recurring peak voltage (repetitive) V IORM = 6 V RMS Creepage current resistance according to VDE 33/IEC 2 Comparative Tracking Index: CTI = 275 Thickness through insulation.75 mm General features: Isolation materials according to UL94-VO Pollution degree 2 (DIN/VDE part resp. IEC 664) Climatic classification 55//2 (IEC 68 part ) Special construction: Therefore, extra low coupling capacity of typical.3 pf, high Common Mode Rejection CTR offered in 4 groups Low temperature coefficient of CTR Coupling System A Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 5 V Forward current I F 6 ma Forward surge current t p s I FSM 3 A Power dissipation T amb 25C P V mw Junction temperature T j 25 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 32 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p ms I CM ma Power dissipation T amb 25C P V 5 mw Junction temperature T j 25 C Coupler Parameter Test Conditions Symbol Value Unit Isolation test voltage (RMS) V IO 3.75 kv Total power dissipation T amb 25C P tot 25 mw Ambient temperature range T amb 55 to + C Storage temperature range T stg 55 to +25 C Soldering temperature 2 mm from case, t s T sd 26 C Rev. A3, Jan 99 9
3 Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F.25.6 V Junction capacitance V R =, f = MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = ma V CEO 32 V Emitter collector voltage I E = A V ECO 7 V Collector emitter cut-off current V CE = V, I f = I CEO na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit AC isolation test voltage f = 5 Hz, t = s V IO 3.75 V (RMS) Collector emitter I F = ma, I C = ma V CEsat.3 V saturation voltage Cut-off frequency V CE = 5 V, I F = ma, f c khz R L = Coupling capacitance f = MHz c k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 5 V, I F = ma CNY7(G)- CTR.4.8 CNY7(G)-2 CTR CNY7(G)-3 CTR. 2. CNY7(G)-4 CTR V CE = 5 V, I F = ma CNY7(G)- CTR.3 CNY7(G)-2 CTR.22 CNY7(G)-3 CTR.34 CNY7(G)-4 CTR.56 Rev. A3, Jan 99
4 Maximum Safety Ratings (according to VDE 884) see figure This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Test Conditions Symbol Value Unit Forward current I si 3 ma Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation T amb 25C P si 265 mw Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage V IOTM 6 kv Safety temperature T si 5 C Insulation Rated Parameters (according to VDE 884) Parameter Test Conditions Symbol Min. Typ. Max. Unit Partial discharge test voltage Routine test %, t test = s V pd.6 kv Partial discharge test voltage t Tr = 6 s, t test = s, V IOTM 6 kv Lot test (sample test) (see figure 2) V pd.3 kv Insulation resistance V IO = 5 V R IO 2 V IO = 5 V, R IO T amb = C V IO = 5 V, T amb = 5C R IO 9 (construction test only) P tot Total Power Dissipation ( mw ) Phototransistor Psi ( mw ) IR-Diode Isi ( ma ) T si Safety Temperature ( C ) 5 V V IOTM V Pd V IOWM V IORM 393 t t, t 2 = to s t 3, t 4 = s t test = s t stres = 2 s t Tr = 6 s t 2 t 4 t 3 t test t stres t Figure. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 884 Rev. A3, Jan 99
5 Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = 5 ma, RL = (see figure 3) t d 4. s Rise time t r 7. s Fall time t f 6.7 s Storage time t s.3 s Turn-on time t on. s Turn-off time t off 7. s Turn-on time V S = 5 V, I F = ma, RL = k (see figure 4) t on 25 s Turn-off time t off 42.5 s R G = 5 t p T. I F I F + 5 V I C = 5 ma; Adjusted trough input amplitude I F t p = 5 ms Channel I Oscilloscope t p t Channel II R L M C L 2 pf I C % 9% Figure 3. Test circuit, non-saturated operation I F R G = 5 I F = ma + 5 V I C % t d t r t s t f t t p T. t on t off t p = 5 s k Channel I Channel II Oscilloscope R L M C L 2 pf pulse dura- delay time rise time turn-on time t p tion t d t r t on (= t d + t r ) t s t f t off (= t s + t f ) storage time fall time turn-off time Figure 4. Test circuit, saturated operation Figure 5. Switching times 2 Rev. A3, Jan 99
6 Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) Coupled device Phototransistor IR-diode T amb Ambient Temperature ( C ) Figure 6. Total Power Dissipation vs. Ambient Temperature I CEO Collector Dark Current, with open Base ( na ) V CE =2V I F = T amb Ambient Temperature ( C ) Figure 9. Collector Dark Current vs. Ambient Temperature.... I CB Collector Base Current ( ma ).. V S =5V V F Forward Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage Figure. Collector Base Current vs. Forward Current CTR rel Relative Current Transfer Ratio V CE =5V I F =ma T amb Ambient Temperature ( C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature V CE =5V.. Figure. Collector Current vs. Forward Current Rev. A3, Jan 99 3
7 I F =5mA 2mA ma 5mA 2mA ma CTR Current Transfer Ratio ( % ) V CE =5V V CE Collector Emitter Voltage ( V ) Figure 2. Collector Current vs. Collector Emitter Voltage V CEsat Collector Emitter Saturation Voltage ( V ) % CTR=5% 2% Figure 3. Collector Emitter Saturation Voltage vs. Collector Current Figure 5. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( s ) Saturated Operation V S =5V R L =k 5 5 Figure 6. Turn on / off Time vs. Forward Current t off t on 2 h FE DC Current Gain V CE =5V.. Figure 4. DC Current Gain vs. Collector Current t on / t off Turn on / Turn off Time ( s ) t on t off Non Saturated Operation V S =5V R L = Figure 7. Turn on / off Time vs. Collector Current 4 Rev. A3, Jan 99
8 Type Date Code (YM) XXXXXX 98 A TK V D E Production Location Safety Logo 59 Coupling Company System Logo Indicator Figure 8. Marking example Dimensions of CNY7G in mm weight: ca..5 g creepage distance: air path: 8 mm 8 mm after mounting on PC board 477 Rev. A3, Jan 99 5
9 Dimensions of CNY7 in mm weight:.5 g creepage distance: air path: 6 mm 6 mm after mounting on PC board Rev. A3, Jan 99
CNY64/ CNY65/ CNY66. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards
Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The
More informationTCET110.(G) up to TCET4100. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards
Optocoupler with Phototransistor Output Description The TCET11./ TCET2/ TCET4 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic
More information4N25/ 4N26/ 4N27/ 4N28. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.
Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline
More information4N35/ 4N36/ 4N37. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.
Optocoupler with Phototransistor Output Description The 4N35/ 4N36/ 4N37 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
More informationTCLT10.. Series. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. VDE Standards
Optocoupler with Phototransistor Output Description The TCLT1.. Series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-lead SO6L package. The elements
More informationK817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.
Optocoupler with Phototransistor Output K817P/ K827PH/ K847PH Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead
More informationMultichannel Optocoupler with Phototransistor Output
CNY74 2H/ CNY74 4H Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode
More informationMultichannel Optocoupler with Phototransistor Output
Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp.
More informationOptocoupler with Transistor Output
Optocoupler with Transistor Output 17197_4 DESCRIPTION The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.
More informationOptocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package
TCLT11. Series Optocoupler, Phototransistor Output, LSOP-4, 11 C Rated, Long Mini-Flat Package 17295-5 DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide
More informationOptocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package
TCMT11. Series Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package 22628-1 C E 4 3 1 2 DESCRIPTION The TCMT11. series consist of a phototransistor optically coupled to a gallium
More informationOptocoupler, Photodarlington Output, High Gain, With Base Connection
End of Life January-208 - Alternative Device: CNY7 HB, HB2, HB3 Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES A C NC 2 3 6 5 4 B C E Isolation test voltage: 4420 V RMS Coupling
More informationMOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection
MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide
More informationOptocoupler, Phototransistor Output, no Base Connection
Optocoupler, Phototransistor Output, no Base Connection FEATURES A C NC 1 2 3 6 5 4 NC C E Isolation test voltage, 5 V RMS No base terminal connection for improved common mode interface immunity Long term
More informationPhototransistor. Industry Standard Single Channel 6 Pin DIP Optocoupler
Phototransistor Industry Standard Single Channel 6 Pin DIP Optocoupler DEVICE TYPES Part No. CTR % Min. Part No. CTR % Min. 4N25 2 MCT2 2 4N26 2 MCT2E 2 4N27 MCT27 5 4N28 MCT27 45 9 4N35 MCT272 75 5 4N36
More informationOptocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, 2842 DESCRIPTION i79004-4 Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS Underwriters
More informationCNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors
Optocoupler, Phototransistor Output, No Base Connection Features Breakdown Voltage, 500 V RMS No Base Terminal Connection for Improved Common Mode Interface Immunity Long Term Stability Industry Standard
More informationSFH615A / SFH6156. Pb Pb-free. Optocoupler, High Reliability, 5300 V RMS VISHAY. Vishay Semiconductors
SFH6A / SFH66 Optocoupler, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS Fast Switching Times Low CTR Degradation Low Coupling
More informationOptocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5300 V RMS Interfaces with common logic families C NC 2 3 V D E 5 4 C E Input-output coupling capacitance
More informationTransmissive Optical Sensor with Phototransistor Output
TCST11. up to TCST23. Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face
More informationTransmissive Optical Sensor without Aperture
TCST/ TCST2 Transmissive Optical Sensor without Aperture Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical
More informationMOC8111 MOC8112 MOC8113
PACKAGE SCHEMATIC ANODE 6 N/C 6 6 CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER 6 DESCRIPTION The MOC8X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor
More informationMOC205-M MOC206-M MOC207-M MOC208-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
More informationPHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
More informationAC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS
HAA HAA3 HAA2 HAA4 DESCRIPTION The HAAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. FEATURES Bi-polar
More informationPHOTOTRANSISTOR OPTOCOUPLERS
MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon
More informationMOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223VM)
More informationILD620/ 620GB / ILQ620/ 620GB
Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) Features Identical Channel to Channel Footprint ILD620 Crosses to TLP620-2 ILQ620 Crosses to TLP620-4 High Collector-Emitter Voltage,
More informationGENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose
More information4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
More informationPHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION The CNX48U, HBX, and TIL3 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U HB HB2 HB255 HB3 TIL3 FEATURES High sensitivity to low input
More informationH11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
PACKAGE OUTLINE SCHEMATIC 6 6 HAVS-M, HAV2S-M 6 HAV-M, HAV2-M 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 5 4 6 HAVA-M, HAV2A-M DESCRIPTION The general purpose optocouplers
More informationSFH612A/ SFH655A. Pb Pb-free. Optocoupler, Photodarlington Output. Vishay Semiconductors
Optocoupler, Photodarlington Output Features High Isolation Test Voltage 5300 V RMS Standard Plastic DIP-4 Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1
More informationSFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS e3 Fast Switching Times Low CTR Degradation
More informationGENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
TIL TIL-M TIL7-M MOC800-M WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC 5 4 PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MOC800, TIL and
More information4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
More informationPHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
More information4N25/ 4N26/ 4N27/ 4N28
Optocoupler, Phototransistor Output, With Base Connection Features Isolation Test Voltage 5300 V RMS Interfaces with Common Logic Families Input-output Coupling Capacitance < pf Industry Standard Dual-in-line
More informationSDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for
More information4N25 4N26 4N27 4N28. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SCHEMATIC. Order this document by 4N25/D STANDARD THRU HOLE
Order this document by N/D GlobalOptoisolator The N, N, N7 and N8 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most
More informationOptocoupler, Phototransistor Output, with Base Connection
FEATURES A 6 B Current transfer ratio (see order information) C 2 5 C Isolation test voltage 5300 V RMS Lead (Pb)-free component NC 3 4 E Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
More informationSubminiature Transmissive Optical Sensor with Phototransistor Output
Subminiature Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light source and the detector is located face to face on the same
More informationPHOTODARLINGTON OPTOCOUPLERS (NO BASE CONNECTION)
MOC9 DESCRITION The MOC9 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. ACKAGE DIMENSIONS IN ID. 0.270 (6.86) 0.240 (6.0) 6 FEATURES High current
More information4N35/ 4N36/ 4N37/ 4N38
Optocoupler, Phototransistor Output, With Base Connection Features Isolation Test Voltage 5300 V RMS Interfaces with common logic families Input-output coupling capacitance < pf Industry Standard Dual-in
More informationReflective Optical Sensor with Transistor Output
Reflective Optical Sensor with Transistor Output Description The has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of
More informationFODM8801A, FODM8801B, FODM8801C OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
FODM88A, FODM88B, FODM88C OptoHiT Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Features Utilizing Proprietary Process Technology to Achieve High Operating
More informationPHOTO SCR OPTOCOUPLERS
PACKAGE SCHEMATIC 6 6 ANODE 6 GATE CATHODE 2 5 ANODE N/C 3 4 CATHODE 6 DESCRIPTION The HC series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon
More informationPHOTODARLINGTON OPTICAL INTERRUPTER SWITCH
HB HB HB3 PACKAGE DIMENSIONS 0.7 (.0) 0.57 (.6) C L 0.9 (6.35) 0.3 (6.5) D E C L 0.39 (.00) 0.3 (0.85).33 (3.38).073 (.85) 0.9 (3.3) 0.9 (3.0) 0.33 (.0) 0. (0.7) Optical C L 0.5 (3.) 0.9 (3.0).35 (8.00).95
More informationFULL PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS
HMA2 Series HMA24 HMA27 Series HMAA275 DESCRITION The HMA24, HMA2 series and HMA27 series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat
More informationH21A1 / H21A2 / H21A3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH
HA / HA / HA.07 (.85). (.8) NOTES: 0.9 (6.5) 0. (6.5) 0.5 (.) 0.9 (.0) PACKAGE DIMENSIONS.95 (7.5).7 (6.9) 0.97 (.7) 0.957 (.) 0.7 (.0) 0.57 (.6) D E 0.755 (9.) 0.75 (8.9) 0.9 (.) 0.9 (.0) Ø 0. (.) Ø 0.6
More informationILD1/ 2/ 5 / ILQ1/ 2/ 5
ILD/ 2/ 5 / ILQ/ 2/ 5 Optocoupler, Phototransistor Output (Dual, Quad hannel) Features urrent Transfer Ratio at I F = 0 m Isolation Test Voltage, 5300 V RMS Lead-free component omponent in accordance to
More informationOptocoupler, Phototransistor Output, Dual Channel
Optocoupler, Phototransistor Output, Dual ILD6 Vishay Semiconductors FEATURES Dual version of SFH6 series i79073_7 A A 2 3 4 8 7 6 5 E E Isolation test voltage, 5300 V RMS V Esat 0.25 ( 0.4) V at I F =
More informationHIGH SPEED TRANSISTOR OPTOCOUPLERS
DESCRIPTION The HCPL05XX, and HCPL04XX optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact pin small outline package. A separate connection
More informationHIGH SPEED TRANSISTOR OPTOCOUPLERS
SINGLECHANNEL: PACKAGE SCHEMATIC N/C V CC + V CC V F + V F 7 V B _ 7 V 0 _ V O _ V 0 V F N/C 4 5 GND + 4 5 GND,,, Pin 7 is not connected in Part Number / DESCRIPTION The /, / and / optocouplers consist
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationRIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS.16 (3.).11 (.8).43 (1.1).3 (.9) FRONT. (.).87 (.).71 (1.8).39 (1.).87 (.).71 (1.8) TOP.3 (.9) R.17 (.4) COLLECTOR MARK 1 NOTE:.16 (.4) BACK 1. Emitter. Collector 3. Tolerance of ±.1
More informationIS2805 DESCRIPTION FEATURES
DESCRIPTION The is an optically coupled isolator consists of two infrared emitting diodes in reverse parallel connection and optically coupled to an NPN silicon photo transistor. This device belongs to
More informationProjet 4 - TENSION / Détecteur de tension TOR
Réalisation de circuits imprimés LMPb 000 / 00 Projet 4 - TENSION / Détecteur de tension TOR Projet : LMPb TEST-TRIAC Info : [DATA4] Révision : avril 00 Figure 4.. Vue d'ensemble du montage (images-maquettes\tension-.jpg).
More informationPhotocoupler Product Data Sheet LTV-100X-G series datasheet Spec No.: DS Effective Date: 11/03/2016 LITE-ON DCC RELEASE
Product Data Sheet LTV-100X-G series datasheet Spec No.: DS70-2013-0012 Effective Date: 11/03/2016 Revision: G LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationHIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS
DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline
More informationOptical (2.8) (2.3) PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER
PACKAGE DIMENSIONS 0.97 (.7) 0.957 (.3) 0.7 (.0) 0.57 (.6) Ø 0.33 (3.) Ø 0.6 (3.) (X) 0.9 (6.35) 0.3 (6.5) D E 0.755 (9.) 0.75 (8.9) 0.39 (.00) 0.3 (0.85) 0.9 (3.3) 0.9 (3.0) 0.03 (.60) NOM 0.33 (.0) 0.
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
More information1.6mm Side Looking Phototransistor PT968-8C
Features Fast response time High sensitivity Small junction capacitance Pb Free This product itself will remain within RoHS compliant version. Description is a phototransistor in miniature package which
More informationHi-Reliability Optically Coupled Isolator
HiReliability Optically Coupled Isolator Features: TO78 hermetically sealed package High current transfer ratio 1 k electrical isolation Base contact provided for conventional transistor biasing TX and
More informationDATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC7 1995 Apr 25 Philips Semiconductors FEATURES High forward transfer admittance Short channel transistor with high forward transfer
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
More informationDATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFR106 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING NPN silicon planar epitaxial transistor in a plastic SOT3 envelope. It is primarily intended
More information65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA
Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
More informationC N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q
QID3322 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 2 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E 1 2 3 6 M H 4 V
More informationDISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced
More informationC N V (4TYP) U (5TYP)
QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1
More informationH11AA1, H11AA3, H11AA2, H11AA4 AC Input/Phototransistor Optocouplers
HAA, HAA3, HAA2, HAA4 AC Input/Phototransistor Optocouplers Features Bi-polar emitter input Built-in reverse polarity input protection Underwriters Laboratory (UL) recognized File #E90700 VDE approved
More informationSubminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process
TCPT12 Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process Description The TCPT12 is a compact transmissive sensor that includes
More informationCNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
CNY7-, CNY7-3, CNY7-2, CNY7-4 Phototransistor Optocouplers Features CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized (File # E90700) VDE recognized 02497
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFQ67W NPN 8 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 99 FEATURES PINNING High power gain Low noise figure High transition frequency Gold metallization ensures excellent
More informationObsolete Product(s) - Obsolete Product(s)
N-CHANNEL 3A - 600 D 2 PAK Power MESH IGBT TYPE CES CE(sat) I c STGB3NB60SD 600
More informationDATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFQ19 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationBD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS
, A, B, C Designed for Complementary Use with the BD26 Series W at 25 C Case Temperature 0 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E SOT-9
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT99 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE
More informationInsulated Gate Bipolar Transistor (IGBT)
BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V
More informationDISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification
More informationIS181 DESCRIPTION FEATURES
DESCRIPTION The IS181 series of optocoupler consists of an infrared light emitting diode optically coupled to an NPN silicon photo transistor in a space efficient Mini Flat Package. FEATURES Low Profile
More informationTechnical Data Sheet 1206 Package Phototransistor
Technical Data Sheet 126 Package Phototransistor Features Fast response time High photo sensitivity Small junction capacitance Pb free The product itself will remain within RoHS compliant version. Descriptions
More informationNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
More informationDATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum
More informationDATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
More informationTechnical Data Sheet 1.5mm Side Looking Phototransistor
Technical Data Sheet 1.5mm Side Looking Phototransistor Features Fast response time High sensitivity Small junction capacitance Pb Free This product itself will remain within RoHS compliant version. Descriptions
More informationDATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
More informationDATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationConverter - Brake - Inverter Module (CBI 1) Trench IGBT
Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32
More informationPHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
More informationDATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
More informationDATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFQ149 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband
More information