TCET110.(G) up to TCET4100. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards

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1 Optocoupler with Phototransistor Output Description The TCET11./ TCET2/ TCET4 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications TCET11.(G) up to TCET4 Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I IV at mains voltage 3 V For appl. class I III at mains voltage 6 V according to VDE 884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. Coll. Emitter VDE Standards These couplers perform safety functions according to the following equipment standards: VDE 884 Optocoupler for electrical safety requirements IEC 95/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 V RMS ) VDE 84 Telecommunication apparatus and data processing IEC 65 Safety for mains-operated electronic and related household apparatus Anode Cath. 4 PIN 8 PIN C 16 PIN Document Number FaxBack Rev. A6, 8 Sep 99 1 (11)

2 TCET11.(G) up to TCET4 Order Instruction Ordering Code CTR Ranking Remarks TCET1/ TCET1G 1) 5 to 6% 4 Pin = Single channel TCET111/ TCET111G 1) 4 to 8% 4 Pin = Single channel TCET112/ TCET112G 1) 63 to 125% 4 Pin = Single channel TCET113/ TCET113G 1) to 2% 4 Pin = Single channel TCET114/ TCET114G 1) 16 to 32% 4 Pin = Single channel TCET115/ TCET115G 1) 5 to 15% 4 Pin = Single channel TCET116/ TCET116G 1) to 3% 4 Pin = Single channel TCET117/ TCET117G 1) 8 to 16% 4 Pin = Single channel TCET118/ TCET118G 1) 13 to 26% 4 Pin = Single channel TCET119/ TCET119G 1) 2 to 4% 4 Pin = Single channel TCET2 5 to 6% 8 Pin = Dual channel TCET4 5 to 6% 16 Pin = Quad channel 1) G = Leadform 1.16 mm; G is not marked on the body Features Approvals: BSI: BS EN 43, BS EN 695 (BS 415), BS EN 695 (BS 72), Certificate number 781 and 742 FIMKO (SETI): EN 695, Certificate number 1127 Underwriters Laboratory (UL) 1577 recognized, file number E Double Protection CSA (C-UL) 1577 recognized file number E Double Protection VDE 884, Certificate number VDE 884 related features: Rated impulse voltage (transient overvoltage) V IOTM = 8 kv peak Isolation test voltage (partial discharge test voltage) V pd = 1.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS (848 V peak) Rated recurring peak voltage (repetitive) V IORM = 6 V RMS Creepage current resistance according to VDE 33/IEC 112 Comparative Tracking Index: CTI 175 Thickness through insulation.75 mm Internal creepage distance > 4 mm General features: CTR offered in 9 groups Isolation materials according to UL94-VO Pollution degree 2 (DIN/VDE 11 / resp. IEC 664) Climatic classification 55//21 (IEC 68 part 1) Special construction: Therefore, extra low coupling capacity of typical.2 pf, high Common Mode Rejection Low temperature coefficient of CTR G = Leadform 1.16 mm; provides creepage distance > 8 mm, for TCET2/ TCET4 optional; suffix letter G is not marked on the optocoupler Coupling System U FaxBack (11) Document Number 8353 Rev. A6, 8 Sep 99

3 Absolute Maximum Ratings Input (Emitter) TCET11.(G) up to TCET4 Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p 1 s I FSM 1.5 A Power dissipation T amb 25C P V mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit Isolation test voltage (RMS) t = 1 min V IO 5 kv Total power dissipation T amb 25C P tot 25 mw Operating ambient temperature T amb 4 to + C range Storage temperature range T stg 55 to +125 C Soldering temperature 2 mm from case t 1 s T sd 26 C Document Number FaxBack Rev. A6, 8 Sep 99 3 (11)

4 TCET11.(G) up to TCET4 Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = ± 5 ma V F V Junction capacitance V R = V, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = A V ECO 7 V Collector emitter cut-off current V CE = 2 V, I f =, E = I CEO 1 na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter I F = 1 ma, I C = 1 ma V CEsat.3 V saturation voltage Cut-off frequency V CE = 5 V, I F = 1 ma, f c 11 khz R L = Coupling capacitance f = 1 MHz C k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C /I F V CE = 5 V, I F = 5 ma TCET1(G)/ CTR.5 6. TCET2/ TCET4 I C/IF V CE = 5 V, I F = 1 ma TCET111(G) CTR.4.8 TCET112(G) CTR TCET113(G) CTR TCET114(G) CTR I C/IF V CE = 5 V, I F = 1 ma TCET111(G) CTR.13.3 TCET112(G) CTR TCET113(G) CTR.34.7 TCET114(G) CTR.56.9 I C/IF V CE = 5 V, I F = 5 ma TCET115(G) CTR TCET116(G) CTR TCET117(G) CTR TCET118(G) CTR TCET119(G) CTR FaxBack (11) Document Number 8353 Rev. A6, 8 Sep 99

5 TCET11.(G) up to TCET4 Maximum Safety Ratings (according to VDE 884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Test Conditions Symbol Value Unit Forward current I si 13 ma Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation T amb 25C P si 265 mw Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage V IOTM 8 kv Safety temperature T si 15 C Insulation Rated Parameters (according to VDE 884) Parameter Test Conditions Symbol Min. Typ. Max. Unit Partial discharge test voltage Routine test %, t test = 1 s V pd 1.6 kv Partial discharge test voltage t Tr = 6 s, ttest = 1 s, V IOTM 8 kv Lot test (sample test) (see figure 2) V pd 1.3 kv Insulation resistance V IO = 5 V R IO 1 12 V IO = 5 V, R IO 1 11 T amb = C V IO = 5 V, T amb = 15C R IO 1 9 (construction test only) P tot Total Power Dissipation ( mw ) Phototransistor Psi ( mw ) IR-Diode Isi ( ma ) T si Safety Temperature ( C ) 15 V IOTM 1393 V Pd V IOWM V IORM t 1 t 1, t 2 = 1 to 1 s t 3, t 4 = 1 s t test = 1 s t stres = 12 s t Tr = 6 s t 3 t test t 4 t 2 t stres t Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 884 Document Number FaxBack Rev. A6, 8 Sep 99 5 (11)

6 TCET11.(G) up to TCET4 Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = 2 ma, RL = (see figure 3) t d 3. s Rise time t r 3. s Turn-on time t on 6. s Storage time t s.3 s Fall time t f 4.7 s Turn-off time t off 5. s Turn-on time V S = 5 V, I F = 1 ma, RL = 1 k (see figure 4) t on 9. s Turn-off time t off 1. s I F I F + 5 V I C = 2 ma; adjusted through input amplitude I F R G = 5 t p T =.1 t p = 5 s 5 Channel I Channel II Oscilloscope R L = 1 M C L = 2 pf I C % 9% t p t Figure 3. Test circuit, non-saturated operation 1% t r t t d t s t f I F R G = 5 t p T =.1 t p = 5 s I F = 1 ma + 5 V I C Channel I Oscilloscope t p t d t r t on (= t d + t r ) t on t off pulse duration t s delay time t f rise time t off (= t s + t f ) turn-on time Figure 5. Switching times storage time fall time turn-off time 5 1 k Channel II R L > 1 M C L < 2 pf Figure 4. Test circuit, saturated operation FaxBack (11) Document Number 8353 Rev. A6, 8 Sep 99

7 TCET11.(G) up to TCET4 Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) 3 Coupled device 25 2 Phototransistor 15 IR-diode T amb Ambient Temperature ( C ) I CEO Collector Dark Current, with open Base ( na ) V CE =2V I F = T amb Ambient Temperature ( C ) Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 9. Collector Dark Current vs. Ambient Temperature I F Forward Current ( ma ) I C Collector Current ( ma ) V CE =5V V F Forward Voltage ( V ) I F Forward Current ( ma ) Figure 7. Forward Current vs. Forward Voltage Figure 1. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio V CE =5V I F =5mA T amb Ambient Temperature ( C ) 75 I C Collector Current ( ma ) I F =5mA mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Figure 11. Collector Current vs. Collector Emitter Voltage Document Number FaxBack Rev. A6, 8 Sep 99 7 (11)

8 TCET11.(G) up to TCET4 V CEsat Collector Emitter Saturation Voltage ( V ) CTR=5% 1 1 1% 2% t on / t off Turn on / Turn off Time ( s ) t on t off Non Saturated Operation V S =5V R L = I C Collector Current ( ma ) I C Collector Current ( ma ) Figure 12. Collector Emitter Saturation Voltage vs. Collector Current Figure 14. Turn on / off Time vs. Collector Current CTR Current Transfer Ratio ( % ) V CE =5V I F Forward Current ( ma ) t on / t off Turn on / Turn off Time ( s ) Saturated Operation V S =5V R L =1k I F Forward Current ( ma ) t off t on 2 Figure 13. Current Transfer Ratio vs. Forward Current Figure 15. Turn on / off Time vs. Forward Current Pin1 Indication Type ET1 82UTK Date Code (YM) Coupling System Indicator Company Logo Figure 16. Marking example Production Location FaxBack (11) Document Number 8353 Rev. A6, 8 Sep 99

9 TCET11.(G) up to TCET4 Dimensions of TCET11. in mm Dimensions of TCET11.G in mm Document Number FaxBack Rev. A6, 8 Sep 99 9 (11)

10 TCET11.(G) up to TCET4 Dimensions of TCET2 in mm Dimensions of TCET4 in mm FaxBack (11) Document Number 8353 Rev. A6, 8 Sep 99

11 Ozone Depleting Substances Policy Statement TCET11.(G) up to TCET4 It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () Document Number FaxBack Rev. A6, 8 Sep (11)

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