DISCRETE SEMICONDUCTORS DATA SHEET. BFR106 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
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1 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995
2 DESCRIPTION PINNING NPN silicon planar epitaxial transistor in a plastic SOT3 envelope. It is primarily intended for low noise, general RF applications. PIN DESCRIPTION Code: R7p 1 base emitter 3 collector age 3 1 Top view MSB3 Fig.1 SOT3. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base 15 V I C DC collector current 1 ma P tot total power dissipation up to T s =7 C; note 1 5 mw h FE DC current gain I C = 5 ma; V CE =9 V; T amb =5 C 5 8 f T transition frequency I C = 5 ma; V CE = 9 V; f = 5 MHz; 5 GHz T amb =5 C G UM maximum unilateral power gain I C = 3 ma; V CE = 6 V; f = 8 MHz; 11.5 db T amb =5 C V o output voltage I C = 5 ma; V CE = 9 V; R L =75Ω; T amb =5 C; d im = 6 db; f (p+q r) = MHz 35 mv LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base 15 V V EBO emitter-base voltage open collector 3 V I C DC collector current 1 ma P tot total power dissipation up to T s =7 C; note 1 5 mw T stg storage temperature C T j junction temperature 175 C Note 1. T s is the temperature at the soldering point of the collector tab. September 1995
3 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE thermal resistance from junction to up to T s =7 C; note 1 1 K/W soldering point R th j-s Note 1. T s is the temperature at the soldering point of the collector tab. CHARACTERISTICS T j =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB = 1 V 1 na h FE DC current gain I C = 5 ma; V CE =9 V 5 8 f T transition frequency I C = 5 ma; V CE = 9 V; f = 5 MHz; 5 GHz T amb =5 C C c collector capacitance I E =i e = ; V CB = 1 V; f = 1 MHz 1.5 pf C e emitter capacitance I C =i c = ; V EB =.5 V; f = 1 MHz 4.5 pf C re feedback capacitance I C = ; V CE = 1 V; f = 1 MHz 1. pf G UM maximum unilateral power gain (note 1) I C = 3 ma; V CE = 6 V; f = 8 MHz; T amb =5 C Notes 1. G UM is the maximum unilateral power gain, assuming S 1 is zero and 11.5 db F noise figure I C = 3 ma; V CE = 6 V; f = 8 MHz; 3.5 db T amb =5 C d second order intermodulation note 5 db distortion V o output voltage note 3 35 mv G UM S 1 = 1 log db. 1 S 11 1 S. I C = 3 ma; V CE = 6 V; R L =75Ω;T amb =5 C; f (p+q) = 81 MHz; V o = 1 mv. 3. d im = 6 db (DIN 454B); I C = 5 ma; V CE = 9 V; R L =75Ω;T amb =5 C; f (p+q r) = MHz. September
4 6 1/ page (Datasheet) Ptot (mw) MEA398-1 mm 1 handbook, halfpage h FE MBB T s ( o C) I C (ma) V CE = 9 V; T amb =5 C. Fig. Power derating curve. Fig.3 DC current gain as a function of collector current. 8 handbook, halfpage f T (GHz) MBB773 4 handbook, halfpage G UM (db) MEA I C (ma) f (MHz) V CE = 9 V; f = 5 MHz; T j =5 C. I C = 3 ma; V CE = 6 V; T amb =5 C. Fig.4 Transition frequency as a function of collector current. Fig.5 Maximum unilateral power gain as a function of frequency. September
5 handbook, full pagewidth 1.5. MHz 5 + j j MHz 5.5 MEA4 1 I C = 3 ma; V CE = 6 V; T amb =5 C. Z o =5Ω. Fig.6 Common emitter input reflection coefficient (S 11 ). handbook, full pagewidth MHz MHz 3 + ϕ ϕ I C = 3 ma; V CE = 6 V; T amb =5 C. 9 MEA43 Fig.7 Common emitter forward transmission coefficient (S 1 ). September
6 handbook, full pagewidth MHz MHz 3 + ϕ ϕ MEA4 I C = 3 ma; V CE = 6 V; T amb =5 C. Fig.8 Common emitter reverse transmission coefficient (S 1 ). handbook, full pagewidth j j 8 MHz MHz 5.5 MEA41 1 I C = 3 ma; V CE = 6 V; T amb =5 C. Z o =5Ω. Fig.9 Common emitter output reflection coefficient (S ). September
7 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT3 D B E A X H E v M A 3 Q A A1 1 c e1 bp w M B Lp e detail X 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max. 1.1 mm.1.9 b p c D E e e 1 H E L p Q v w OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT September
8 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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