4N35/ 4N36/ 4N37. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

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1 Optocoupler with Phototransistor Output Description The 4N35/ 4N36/ 4N37 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. 4N35/ 4N36/ 4N37 Applications Galvanically separated circuits for general purposes Features B C E Isolation test voltage (RMS) 3.75 kv Underwriters Laboratory (UL) 1577 recognized, file number E Low coupling capacity of typical.3 pf Current Transfer Ratio (CTR) > 1% Low temperature coefficient of CTR A (+) C ( ) n.c Order Instruction Ordering Code CTR Ranking Remarks 4N35 > 1% 4N36 > 1% 4N37 > 1% Rev. A3, 11 Jan 99 11

2 Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p s I FSM 3 A Power dissipation T amb 25C P V 1 mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector base voltage V CBO 7 V Collector emitter voltage V CEO 3 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Peak collector current t p /T =.5, t p 1 ms I CM 1 ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit Isolation test voltage (RMS) t = 1min V 1) IO 3.75 kv Total power dissipation T amb 25C P tot 25 mw Ambient temperature range T amb 55 to +1 C Storage temperature range T stg 55 to +125 C Soldering temperature 2 mm from case, t 1 s T sd 26 C 1) Related to standard climate 23/5 DIN Rev. A3, 11 Jan 99

3 Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 1 ma V F V Forward voltage I F = 1 ma, V F 1.4 V T amb = 1C Junction capacitance V R =, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector base voltage I C = 1 A V CBO 7 V Collector emitter voltage I C = 1 ma V CEO 3 V Emitter collector voltage I E = 1 A V ECO 7 V Collector dark current I F =, E =, V CE = 1 V I CEO 5 5 na I F =, E =, V CE = 3 V, T amb = 1C I CEO 5 A Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Isolation test voltage f = 5 Hz, t = 2 s V 1) IO 3.75 kv (RMS) Isolation resistance V IO = 1 kv, R 1) IO % relative humidity Collector emitter I F = 1 ma, I C =.5 ma V CEsat.3 V saturation voltage Cut-off frequency I F = 1 ma, V CE = 5 V, f c 11 khz R L = 1 Coupling capacitance f = 1 MHz C k.3 pf 1) Related to standard climate 23/5 DIN 514 Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C /I F V CE = 1 V, I F = 1 ma 4N35, 4N36, CTR 1 4N37 V CE = 1 V, I F = 1 ma, T amb = 1C 4N35, 4N36, 4N37 CTR.4 Rev. A3, 11 Jan 99 13

4 Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Turn-on time V S = 1 V, I C = 2 ma, R L = 1 (see figure 1) t on 5.5 s (typical) Turn-on time t on 1. s (maximum) Turn-off time t off 4.5 s (typical) Turn-off time t off 1. s (maximum) Turn-on time V S = 5 V, I F = 1 ma, RL = 1 k (see figure 2) t on 9. s Turn-off time t off 18. s I F I F + 1 V I C = 2 ma ; Adjusted trough I F R G = 5 t p T.1 input amplitude t p t t p = 5 s Channel I Channel II Oscilloscope R L 1 M C L 2 pf I C 1% 9% Figure 1. Test circuit, non-saturated operation 1% t r t t d t s t f I F R G = 5 t p T.1 I F = 1 ma + 5 V I C t on pulse dura- t p tion t d t r t on (= t d + t r ) delay time rise time turn-on time t off t s t f t off (= t s + t f ) storage time fall time turn-off time t p = 5 s Channel I Oscilloscope Figure 3. Switching times k Channel II R L 1 M C L 2 pf Figure 2. Test circuit, saturated operation 14 Rev. A3, 11 Jan 99

5 Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) Coupled device Phototransistor IR-diode T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature CTR rel Relative Current Transfer Ratio V F Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage V CE =1V I F =1mA T amb Ambient Temperature ( C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature I CEO Collector Dark Current, with open Base ( na ) I CB Collector Base Current ( ma ) V CE =1V I F = T amb Ambient Temperature ( C ) Figure 7. Collector Dark Current vs. Ambient Temperature V CB =1V Figure 8. Collector Base Current vs. Forward Current V CE =1V Figure 9. Collector Current vs. Forward Current Rev. A3, 11 Jan 99 15

6 25 1 P V Power Dissipation ( mw ) R thja CTR Current Transfer Ratio ( % ) 1 1 V CE =2V T amb Ambient Temperature ( C ) Figure 1. Collector Current vs. Collector Emitter Voltage Figure 13. Current Transfer Ratio vs. Forward Current V CEsat Collector Emitter Saturation Voltage ( V ) CTR=5% 1 1 1% 2% 1 t on / t off Turn on / Turn off Time ( s ) Saturated Operation V S =5V R L =1k t off t on Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 14. Turn on / off Time vs. Forward Current h FE DC Current Gain V CE =1V 5V t on / t off Turn on / Turn off Time ( s ) t on t off Non Saturated Operation V S =1V R L = Figure 12. DC Current Gain vs. Collector Current Figure 15. Turn on / off Time vs. Collector Current 16 Rev. A3, 11 Jan 99

7 Type Date Code (YM) XXXXXX 918 A TK V D E Production Location Safety Logo 159 Coupling Company System Logo Indicator Figure 16. Marking example Dimensions of 4N3. in mm weight:.5 g creepage distance: air path: 6 mm 6 mm after mounting on PC board 1477 Rev. A3, 11 Jan 99 17