CNY64/ CNY65/ CNY66. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards

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1 Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and output for highest safety requirements of > 3 mm. CNY64/ CNY65/ CNY66 Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I IV at mains voltage 3 V For appl. class I IV at mains voltage 6 V For appl. class I III at mains voltage 1 V according to VDE 884, table 2, suitable for: A (+) C Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. VDE Standards These couplers perform safety functions according to the following equipment standards: VDE 884 Optocoupler for electrical safety requirements IEC 95/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 V RMS ) VDE 84 Telecommunication apparatus and data processing IEC 65 Safety for mains-operated electronic and related household apparatus VDE 7/IEC 335 Household equipment VDE 16 Electronic equipment for electrical power installation VDE 75/IEC 61 Medical equipment C ( ) E Rev. A4, 11 Jan

2 Order Instruction Ordering Code CTR Ranking Remarks CNY64/ CNY65/ CNY66 5 to 3% CNY64A/ CNY65A 63 to 125% CNY64B/ CNY65B 1 to 2% Features Approvals: Underwriters Laboratory (UL) 1577 recognized, file number E VDE 884, Certificate number VDE 884 related features: Rated impulse voltage (transient overvoltage) V IOTM = 8 kv peak Isolation test voltage (partial discharge test voltage) V pd = 2.8 kv peak Rated insulation voltage (RMS includes DC) V IOWM = 1 V RMS (145 V peak) Rated recurring peak voltage (repetitive) V IORM = 1 V RMS Creepage current resistance according to VDE 33/IEC 112 Comparative Tracking Index: CTI = 2 Thickness through insulation > 3 mm Coupling Systems: CNY64 Coupling System H, CNY65 Coupling System J, CNY66 Coupling System K, Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 5 V Forward current I F 75 ma Forward surge current t p 1 s I FSM 1.5 A Power dissipation T amb 25C P V 12 mw Junction temperature T j 1 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 32 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM 1 ma Power dissipation T amb 25C P V 13 mw Junction temperature T j 1 C Coupler Parameter Test Conditions Symbol Value Unit AC isolation test voltage (RMS) t = 1 min V IO 8.2 kv Total power dissipation T amb 25C P tot 25 mw Ambient temperature range T amb 55 to +85 C Storage temperature range T stg 55 to +1 C Soldering temperature 2 mm from case, t 1 s T sd 26 C 118 Rev. A4, 11 Jan 99

3 Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F V Junction capacitance V R =, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 32 V Emitter collector voltage I E = 1 A V ECO 7 V Collector emitter cut-off current V CE = 2 V, I f = I CEO 2 na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter I F = 1 ma, I C = 1 ma V CEsat.3 V saturation voltage Cut-off frequency V CE = 5 V, I F = 1 ma, f c 11 khz R L = 1 Coupling capacitance f = 1 MHz C k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C /I F V CE = 5 V, I F = 1 ma CNY64, CTR CNY65, CNY66 CNY64A, CTR CNY65A CNY64B, CNY65B CTR 1 2 Rev. A4, 11 Jan

4 Maximum Safety Ratings (according to VDE 884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Test Conditions Symbol Value Unit Forward current I si 12 ma Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation T amb 25C P si 25 mw Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage V IOTM 8 kv Safety temperature T si 18 C Insulation Rated Parameters (according to VDE 884) Parameter Test Conditions Symbol Min. Typ. Max. Unit Partial discharge test voltage Routine test 1%, t test = 1 s V pd 2.8 kv Partial discharge test voltage t Tr = 6 s, t test = 1 s, V IOTM 8 kv Lot test (sample test) (see figure 2) V pd 2.2 kv Insulation resistance V IO = 5 V R IO 1 12 V IO = 5 V, R IO 1 11 T amb = 1C V IO = 5 V, T amb = 18C R IO 1 9 (construction test only) V IOTM I si (ma) P si (mw) T amb ( C ) V V Pd V IOWM V IORM 1393 t 1 t 1, t 2 = 1 to 1 s t 3, t 4 = 1 s t test = 1 s t stres = 12 s t Tr = 6 s t 2 t 4 t 3 t test t stres t Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE Rev. A4, 11 Jan 99

5 Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = 5 ma, RL = 1 (see figure 3) t d 2.6 s Rise time t r 2.4 s Fall time t f 2.7 s Storage time t s.3 s Turn-on time t on 5. s Turn-off time t off 3. s Turn-on time V S = 5 V, I F = 1 ma, RL = 1 k (see figure 4) t on 25. s Turn-off time t off 42.5 s R G = 5 t p T.1 t p = 5 ms I F I F + 5 V I C = 5 ma; Adjusted trough input amplitude I F t p t 5 1 Channel I Channel II Oscilloscope R L 1 M C L 2 pf I C 1% 9% Figure 3. Test circuit, non-saturated operation 1% t r t t d t s t f I F R G = 5 t p T.1 I F = 1 ma + 5 V I C t on pulse dura- t p tion t d t r t on (= t d + t r ) delay time rise time turn-on time t off t s t f t off (= t s + t f ) storage time fall time turn-off time t p = 5 s Channel I Oscilloscope Figure 5. Switching times k Channel II R L 1 M C L 2 pf Figure 4. Test circuit, saturated operation Rev. A4, 11 Jan

6 Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) Phototransistor IR-Diode Coupled Device T amb Ambient Temperature ( C ) Figure 6. Total Power Dissipation vs. Ambient Temperature 1 I CEO Collector Dark Current, with open Base ( na ) T amb Ambient Temperature ( C ) Figure 9. Collector Dark Current vs. Ambient Temperature 1 V CE =2V I F = I F Forward Current ( ma ) I C Collector Current ( ma ) V CE =5V V F Forward Voltage ( V ) I F Forward Current ( ma ) 1 Figure 7. Forward Current vs. Forward Voltage Figure 1. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio V CE =5V I F =1mA T amb Ambient Temperature ( C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature I C Collector Current ( ma ) I F =5mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) 1 Figure 11. Collector Current vs. Collector Emitter Voltage 122 Rev. A4, 11 Jan 99

7 V CEsat Collector Emitter Saturation Voltage ( V ) CTR=5 %.2 2%.1 1% I C Collector Current ( ma ) t on / t off Turn on / Turn off Time ( s ) Saturated Operation V S =5V R L =1k t off t on I F Forward Current ( ma ) 2 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current Figure 14. Turn on / off Time vs. Forward Current CTR Current Transfer Ratio ( % ) V CE =5V I F Forward Current ( ma ) 1 t on / t off Turn on / Turn off Time ( s ) t on t off Non Saturated Operation V S =5V R L = I C Collector Current ( ma ) 1 Figure 13. Current Transfer Ratio vs. Forward Current Figure 15. Turn on / off Time vs. Collector Current Type Date Code (YM) CNY J TK19 V D E 884 Coupling System Indicator Company Logo 1589 Figure 16. Marking example Production Location Safety Logo Rev. A4, 11 Jan

8 Dimensions of CNY64 in mm weight: ca..73 g creepage distance: air path: 9.5 mm 9.5 mm after mounting on PC board Dimensions of CNY65 in mm weight: ca. 1.4 g creepage distance: air path: 14 mm 14 mm after mounting on PC board Rev. A4, 11 Jan 99

9 Dimensions of CNY66 in mm weight: ca. 1.7 g creepage distance: air path: 17 mm 17 mm after mounting on PC board Rev. A4, 11 Jan