AO V P-Channel MOSFET

Transcription

1 AO343 2V PChannel MOFET eneral escription Product ummary The AO343 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.v. This device is suitable for use in buck convertor applications. V = 2V I = 3.A R (ON) < 7mΩ R (ON) < 9mΩ R (ON) < mω R (ON) < 3mΩ (V = 4.V) (V = 4.V) (V = 2.V) (V =.8V) (V =.V) Top View OT23 Bottom View Absolute Maximum Ratings unless otherwise noted Parameter ymbol ec teady tate rainource Voltage 2 ateource Voltage Continuous rain Current A Pulsed rain Current B Power issipation A T A =7 C T A =7 C Junction and torage Temperature Range V V ± I I M 2.4 P T J, T T.9.6 to Units V V A W C Thermal Characteristics Parameter Maximum JunctiontoAmbient A Maximum JunctiontoAmbient A Maximum JunctiontoLead C ymbol Typ Max t s 7 9 R θja teadytate 2 teadytate R θjl 63 8 Units Rev. 2. November 23 Page of

2 Electrical Characteristics (T J =2 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I =2µA, V =V 2 V V =2V, V =V I Zero ate Voltage rain Current µa T J = C I atebody leakage current V =V, V =±8V ± na V (th) ate Threshold Voltage V =V I =2µA..6 V I (ON) On state drain current V =4.V, V =V 2 A R (ON) tatic rainource OnResistance V =4.V, I =3.A V =2.V, I =3.A V =.8V, I =2.A V =.V, I =.A 6 7 T J =2 C mω 8 mω 3 mω g F Forward Transconductance V =V, I =3.A V iode Forward Voltage I =A,V =V.7 V I Maximum Bodyiode Continuous Current.4 A YNAMIC PARAMETER C iss Input Capacitance 74 pf C oss Output Capacitance V =V, V =V, f=mhz 7 pf C rss Reverse Transfer Capacitance 2 pf R g ate resistance V =V, V =V, f=mhz 8 23 Ω WITCHIN PARAMETER Q g Total ate Charge.6 nc Q gs ate ource Charge V =4.V, V =V, I =3.A.6 nc Q gd ate rain Charge.8 nc t (on) TurnOn elaytime ns t r TurnOn Rise Time V =4.V, V =V, R L =3Ω, ns t (off) TurnOff elaytime R EN =6Ω 6 ns t f TurnOff Fall Time 3 ns t rr Body iode Reverse Recovery Time I F =3.A, di/dt=a/µs 7 49 ns Q rr Body iode Reverse Recovery Charge I F =3.A, di/dt=a/µs 4 nc A: The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. copper, in a still air environment with. The value in any given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient.. The static characteristics in Figures to 6 are obtained using 3µs pulse width, duty cycle.% max. E. These tests are performed with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with. The OA curve provides a single pulse rating. 2 mω THI PROUCT HA BEEN EINE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIIN OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIHT TO IMPROVE PROUCT EIN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev. 2. November 23 Page 2 of

3 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC V 3.V 2.V 2 V =V I (A) 2.V V =.V I (A) 2 C 2 C V (Volts) Figure : OnRegion Characteristics V (Volts) Figure 2: Transfer Characteristics.6 R (ON) (mω) V =.V V =.8V V =2.V V =4.V Normalized OnResistance.4.2 V =2.V I =3A V =.V I =.A V =.8V I =2.A V =4.V I =3.A I (A) Figure 3: OnResistance vs. rain Current and ate Voltage Temperature ( C) Figure 4: OnResistance vs. Junction Temperature I =3.A E2 E 2 E R (ON) (mω) C V (Volts) Figure : OnResistance vs. ateource Voltage I (A) E E2 E3 E4 E 2 C V (Volts) Figure 6: Bodyiode Characteristics Rev. 2. November 23 Page 3 of

4 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 4 V =V I =3.A 8 V (Volts) 3 2 Capacitance (pf) 6 4 C iss 2 C oss Q g (nc) Figure 7: atecharge Characteristics C rss 2 V (Volts) Figure 8: Capacitance Characteristics.. R (ON) limited µs µs T J(Max) = C I (Amps)... T J(Max) = C C ms ms.s s. V (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note E) Power (W).... Pulse Width (s) Figure : ingle Pulse Power Rating JunctiontoAmbient (Note E) Z θja Normalized Transient Thermal Resistance.. =T on /T T J,PK =T A P M.Z θja.r θja R θja =2 In descending order =.,.3,.,.,.2,., single pulse 2 ingle Pulse P T on T Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note E) Rev. 2. November 23 Page 4 of

5 ate Charge Test Circuit & Waveform Qg VC VC V Qgs Qgd Ig Charge RL Resistive witching Test Circuit & W aveforms ton toff td(on) tr td(off) t f Rg VC 9% % iode Recovery Test Circuit & W aveforms Q rr = Idt Ig Isd L V C Isd I F di/dt I RM t rr Rev. 2. November 23 Page of