FCP13N60N / FCPF13N60NT N-Channel MOSFET

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Frederica Verity Maxwell
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FCP3N60N / FCPF3N60NT N-Channel MOSFET 600V, 3A, 0.258Ω Features R DS(on) = 0.244Ω ( Typ.) @ V GS = V, I D = 6.5A Ultra Low Gate Charge ( Typ.Qg = 30.

voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

1 FCP3N60N / FCPF3N60NT N-Channel MOSFET 600V, 3A, 0.258Ω Features R DS(on) = 0.244Ω ( V GS = V, I D = 6.5A Ultra Low Gate Charge ( Typ.Qg = 30.4nC) Low Effective Output Capacitance 0% Avalanche Tested RoHS Compliant G D S TO-220 FCP Series G D S Description August 2009 SupreMOS TM The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. TO-220F FCPF Series G D S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Symbol Parameter FCP3N60N FCPF3N60NT Units V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V I D Drain Current -Continuous (T C = 25 o C) 3 3* -Continuous (T C = 0 o C) * A I DM Drain Current - Pulsed (Note ) A E AS Single Pulsed Avalanche Energy (Note 2) 235 mj I AR Avalanche Current 4.3 A E AR Repetitive Avalanche Energy.6 mj dv/dt MOSFET dv/dt Ruggedness 0 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns P D Power Dissipation (T C = 25 o C) W - Derate above 25 o C W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP3N60N FCPF3N60NT Units R θjc Thermal Resistance, Junction to Case R θcs Thermal Resistance, Case to Heak Sink ( Typical) R θja Thermal Resistance, Junction to Ambient o C/W 2009 Fairchild Semiconductor Corporation

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCP3N60N FCP3N60N TO FCPF3N60NT FCPF3N60NT TO-220F Electrical Characteristics T C = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = ma, V GS = 0V, T C = 25 o C V ΔBV DSS ΔT J On Characteristics Breakdown Voltage Temperature Coefficient Dynamic Characteristics I D = ma, Referenced to 25 o C V/ o C V DS = 480V, V GS = 0V - - I DSS Zero Gate Voltage Drain Current μa V DS = 480V, V GS = 0V, T C = 25 o C I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±0 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250μA V R DS(on) Static Drain to Source On Resistance V GS = V, I D = 6.5A Ω g FS Forward Transconductance V DS = 40V, I D = 6.5A S C iss Input Capacitance pf V DS = 0V, V GS = 0V C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf C oss Output Capacitance V DS = 380V, V GS = 0V, f = MHz pf C oss eff Effective Output Capacitance V DS = 0V to 480V, V GS = 0V pf Q g(tot) Total Gate Charge at V V DS = 380V,I D = 6.5A nc Q gs Gate to Source Gate Charge V GS = V nc Q gd Gate to Drain Miller Charge (Note 4) nc ESR Equivalent Series Resistance (G-S) Drain Open Ω Switching Characteristics t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 380V, I D = 6.5A ns t d(off) Turn-Off Delay Time R G = 4.7Ω ns t f Turn-Off Fall Time (Note 4) ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current A I SM Maximum Pulsed Drain to Source Diode Forward Current A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 6.5A V t rr Reverse Recovery Time V GS = 0V, I SD = 6.5A ns Q rr Reverse Recovery Charge di F /dt = 0A/μs μc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 4.3A, R G = 25Ω, Starting T J = 25 C 3. I SD 3A, di/dt 200A/μs, V DD BV DSS, Starting T J = 25 C 4. Essentially Independent of Operating Temperature Typical Characteristics 2

3 Typical Performance Characteristics ID, Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 40 V GS = 5.0 V.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V. 250μs Pulse Test 2. T C = 25 o C V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics. V DS = 20V μs Pulse Test V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature V GS = V V GS = 20V T C = 25 o C I D, Drain Current [A] IS, Reverse Drain Current [A] ID, Drain Current[A] o C 50 o C -55 o C 25 o C 25 o C. V GS = 0V μs Pulse Test V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss C rss. V GS = 0V 2. f = MHz V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics V DS = 20V V DS = 380V V DS = 480V I D = 6.5A Q g, Total Gate Charge [nc] 3

4 Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage ID, Drain Current [A] Figure 7. Breakdown Voltage Variation vs. Temperature V GS = 0V 2. I D = ma T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area _ FCP3N60N 0 Operation in This Area is Limited by R DS(on) 0μs ms ms μs 0.. T C = 25 o C 2. T J = 50 o C 3. Single Pulse V DS, Drain-Source Voltage [V] DC RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature V GS = V 2. I D = 6.5A T J, Junction Temperature [ o C] Figure. Maximum Safe Operating Area _ FCPF3N60NT 0 0μs ms μs ms Operation in This Area is Limited by R DS(on) DC 0.. T C = 25 o C 2. T J = 50 o C 3. Single Pulse V DS, Drain-Source Voltage [V] Figure. Maximum Drain Current vs. Case Temperature 5 2 ID, Drain Current [A] T C, Case Temperature [ o C] 4

5 Typical Performance Characteristics (Continued) Thermal Response [Z θjc ] Thermal Response [Z θjc ] Figure 2. Transient Thermal Response Curve _ FCP3N60N Single pulse 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) Rectangular Pulse Duration [sec] Figure 3. Transient Thermal Response Curve _ FCPF3N60NT P DM P DM t t 2. Z θjc (t) =.07 o C/W Max t Z θjc (t) = 3.7 o C/W Max. Single pulse 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) Rectangular Pulse Duration [sec] P DM t t 2 t 5

6 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6

7 Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T + I S D V D S _ L D r iv e r R G S a m e T y p e a s D U T V G S d v / d t c o n t r o lle d b y R G I S D c o n t r o lle d b y p u ls e p e r io d V D D V G S ( D riv e r ) G a t e P u ls e W id t h D = G a t e P u ls e P e r io d 0 V I F M, B o d y D io d e F o r w a r d C u r r e n t I S D ( D U T ) d i/ d t I R M B o d y D io d e R e v e r s e C u r r e n t V D S ( D U T ) B o d y D io d e R e c o v e r y d v / d t V S D V D D B o d y D io d e F o r w a r d V o lt a g e D r o p 7

8 Mechanical Dimensions TO-220 Dimensions in Millimeters 8

9 Mechanical Dimensions TO-220F Dimensions in Millimeters 9

10 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw /W /kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. UHC Ultra FRFET UniFET VCX VisualMax XS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I4

Description. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 250 V V GSS Gate to Source Voltage ±30 V

Description. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 250 V V GSS Gate to Source Voltage ±30 V FDA33N25 N-Channel MOSFET 250V, 33A, 0.094Ω Features R DS(on) = 0.088Ω ( Typ.)@ V GS = 0V, I D = 6.5A Low gate charge ( Typ. 36nC) Low C rss ( Typ. 35pF) Fast switching Improved dv/dt capability RoHS compliant