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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 August 06 N7000 / / N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability Ordering Information TO-9. Source. Gate 3. rain G SOT-3 (TO-36AB) / escription These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 ma C and can deliver pulsed currents up to A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. S G S N7000 / / N-Channel Enhancement Mode Field Effect Transistor Part Number Marking Package Packing Method Min Order Qty / Immediate Pack Qty N7000 N7000 TO-9 3L Bulk 0000 / 000 N7000_74Z N7000 TO-9 3L Ammo 000 / 000 N7000_75Z N7000 TO-9 3L Tape and Reel 000 / 000 N7000_6Z N7000 TO-9 3L Tape and Reel 000 / SOT-3 3L Tape and Reel 3000 / SOT-3 3L Tape and Reel 3000 / Fairchild Semiconductor Corporation N7000 / / Rev..0

3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T C = 5 C unless otherwise noted. Symbol Thermal Characteristics Values are at T C = 5 C unless otherwise noted. Electrical Characteristics Parameter Values are at T C = 5 C unless otherwise noted. Value N7000 V SS rain-to-source Voltage 60 V V GR rain-gate Voltage (R GS M 60 V V GSS Gate-Source Voltage - Continuous ±0 V Gate-Source Voltage - Non Repetitive (tp < 50 S) ±40 I Maximum rain Current - Continuous ma Maximum rain Current - Pulsed P Maximum Power issipation erated above 5 C mw mw/ C T J, T STG Operating and Storage Temperature Range -55 to to 50 C T L Maximum Lead Temperature for Soldering Purposes, /6-inch from Case for 0 Seconds 300 C Symbol Parameter Value N7000 R JA Thermal Resistance, Junction to Ambient C/W Symbol Parameter Conditions Type Min. Typ. Max. Unit Off Characteristics rain-source Breakdown BV SS V Voltage GS = 0 V, I = 0 A All 60 V I SS I GSSF I GSSR Zero Gate Voltage rain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Unit Unit V S = 48 V, V GS = 0 V N7000 A V S = 48 V, V GS = 0 V, ma T C = 5 C V S = 60 V, V GS = 0 V A V S = 60 V, V GS = 0 V, ma T C = 5 C V GS = 5 V, V S = 0 V V GS = 0 V, V S = 0 V V GS = -5 V, V S = 0 V V GS = -0 V, V S = 0 V N7000 N na 00 na -0 na -00 na N7000 / / N-Channel Enhancement Mode Field Effect Transistor 998 Fairchild Semiconductor Corporation N7000 / / Rev..0

4 Electrical Characteristics (Continued) Symbol Parameter Conditions Type Min. Typ. Max. Unit On Characteristics V GS(th) Gate Threshold Voltage V S = V GS, I = ma N V R S(ON) Static rain-source On-Resistance V S = V GS, I = 50 A V GS = 0 V, I = 500 ma N V GS = 0 V, I = 500 ma, T C = 5 C.9 9 V GS = 4.5 V, I = 75 ma V GS = 0 V, I = 500 ma. 7.5 V GS = 0 V, I = 500 ma, T C = 00 C V GS = 5 V, I = 50 ma V GS = 5 V, I = 50 ma, T C = 00 C V GS = 0 V, I = 500 ma. V GS = 0 V, I = 500 ma, T C = 5 C 3.5 V GS = 5 V, I = 50 ma.7 3 V GS = 5 V, I = 50 ma, T C = 5 C.8 5 V S(ON) rain-source On-Voltage V GS = 0 V, N7000 I = 500 ma V GS = 4.5 V, I = 75 ma V GS = 0 V, I = 500 ma V GS = 5.0 V, I = 50 ma V GS = 0 V, I = 500 ma 0.6 V GS = 5.0 V, I = 50 ma 0.09 I (ON) On-State rain Current V GS = 4.5 V, N7000 V S = 0 V V GS = 0 V, V S V S(on) V GS = 0 V, V S V S(on) g FS Forward Transconductance V S = 0 V, I = 00 ma V S V S(ON), I = 00 ma V S V S(ON), I = 00 ma N V ma ms N7000 / / N-Channel Enhancement Mode Field Effect Transistor 998 Fairchild Semiconductor Corporation N7000 / / Rev..0 3

5 Electrical Characteristics (Continued) Symbol Parameter Conditions Type Min. Typ. Max. Unit ynamic Characteristics C iss Input Capacitance V S = 5 V, V GS = 0 V, All 0 50 pf C oss Output Capacitance f =.0 MHz All 5 C rss Reverse Transfer Capacitance All 4 5 t on Turn-On Time V = 5 V, R L = 5, N7000 ns I = 500 ma, 0 V GS = 0 V, R GEN = 5 V = 30 V, R L = 50, I = 00 ma, V GS = 0 V, R GEN = 5 t off Turn-Off Time V = 5 V, R L = 5, I = 500 ma, V GS = 0 V, R GEN = 5 V = 30 V, R L = 50, I = 00 ma, V GS = 0 V, R GEN = 5 Note:. Pulse test : Pulse Width 300 μs, uty Cycel %. 0 N rain-source iode Characteristics and Maximum Ratings I S Maximum Continuous rain-source iode Forward 5 ma Current 80 I SM Maximum Pulsed rain-source iode Forward 0.8 A Current.5 V rain-source iode S Forward Voltage V GS = 0 V, I S = 5 ma () V V GS = 0 V, I S = 400 ma () ns N7000 / / N-Channel Enhancement Mode Field Effect Transistor 998 Fairchild Semiconductor Corporation N7000 / / Rev..0 4

6 Typical Performance Characteristics R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE I, RAIN-SOURCE CURRENT (A).5 = 0V V GS V S, RAIN-SOURCE VOLTAGE (V V GS = 0V I = 500mA T, JUNCTION TEMPERATURE ( C) J Figure. On-Region Characteristics Figure 3. On-Resistance Variation with Temperature V = 0 S T J = -55 C N7000 / / C C R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V th, N I, RAIN CURRENT (A) V GS =4.0V V GS T J = 5 C 5 C C Figure. On-Resistance Variation with Gate Voltage and rain Current I, RAIN CURRENT (A) Figure 4. On-Resistance Variation with rain Current and Temperature V S= V GS I = ma N7000 / / N-Channel Enhancement Mode Field Effect Transistor V, GATE TO SOURCE VOLTAGE (V GS Figure 5. Transfer Characteristics T, JUNCTION TEMPERATURE ( C) J Figure 6. Gate Threshold Variation with Temperature 998 Fairchild Semiconductor Corporation N7000 / / Rev..0 5

7 S Typical Performance Characteristics (Continued) BV NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE CAPACITANCE (pf) I = 50µA T, JUNCTION TEMPERATURE ( C) J V S, RAIN TO SOURCE VOLTAGE (V) V GS Figure 7. Breakdown Voltage Variation with Temperature f = MHz V GS = 0V Figure 9. Capacitance Characteristics R GEN V IN G V R L N7000 / / UT C iss C oss C rss V OUT I, REVERSE RAIN CURRENT (A) V GS, GA E-SOURCE VOLTAGE (V) V GS T J = 5 C 5 C -55 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 8. Body iode Forward Voltage Variation with V S = 5V I =500mA 80mA mA Q g, ATE CHARGE (nc) Figure 0. Gate Charge Characteristics t d(on) Output, Vout Input, Vin t on 0% 50% tr 90% t d(off) 50% t off 90% 90% 0% t f Inverted N7000 / / N-Channel Enhancement Mode Field Effect Transistor S 0% Pulse Width Figure. Figure. Switching Waveforms 998 Fairchild Semiconductor Corporation N7000 / / Rev..0 6

8 Typical Performance Characteristics (Continued) r(t), NORMALIZE EFFECTIVETRANSIENT THERMAL RESISTANCE r(t), NORMALIZE EFFECTIVETRANSIENT THERMAL RESISTANCE t, TIME (sec) Figure 6. TO-9, N7000 Transient Thermal Response Curve Figure 3. N7000 Maximum Safe Operating Area Figure 5. NS7000A Maximum Safe Operating Area t, TIME (sec) R Figure 4. Maximum Safe Operating Area Figure. R R = (See atasheet) P(pk) t t TJ - TA = P * (t), uty Cycle = (See atasheet) TJ - TA = P * (t), uty Cycle N7000 / / N-Channel Enhancement Mode Field Effect Transistor 998 Fairchild Semiconductor Corporation N7000 / / Rev..0 7

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13 Mouser Electronics Authorized istributor Click to View Pricing, Inventory, elivery & Lifecycle Information: Fairchild Semiconductor: _87Z N7000_75Z N7000 N7000_74Z N7000_6Z