NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
|
- Leo Holt
- 5 years ago
- Views:
Transcription
1 Augus 996 NT04L N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These N-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology.this very high densiy process is especially ailored o minimize on-sae resisance, provide superior swiching performance, and wihsand high energy pulses in he avalanche and commuaion modes.thesedevices are paricularly suied for low volage applicaions such as C moor conrol and C/C conversion where fas swiching, low in-line power loss, and resisance o ransiens are needed..8 A, 60 V. R S(ON) = 0. V GS = 4.5 V R S(ON) = 0.6 V GS = 0 V. High densiy cell design for exremely low R S(ON). High power and curren handling capabiliy in a widely used surface moun package. G S G S Absolue Maximum Raings T A = 5 C unless oherwise noed Symbol Parameer NT04L Unis V SS rain-source Volage 60 V V GSS Gae-Source Volage ± 0 V I rain Curren - Coninuous (Noe a) ±.8 A - Pulsed ± 0 P Maximum Power issipaion (Noe a) 3 W (Noe b).3 (Noe c). T J,T STG Operaing and Sorage Temperaure Range -65 o 50 C THERMAL CHARACTERISTICS R θja Thermal Resisance, Juncion-o-Ambien (Noe a) 4 C/W R θjc Thermal Resisance, Juncion-o-Case (Noe ) C/W 997 Fairchild Semiconducor Corporaion NT04L Rev.
2 Elecrical Characerisics (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage V GS = 0 V, I = 50 µa 60 V I SS Zero Gae Volage rain Curren V S = 60 V, V GS = 0 V 5 µa T J = 55 C 50 µa I GSSF Gae - Body Leakage, Forward V GS = 0 V, V S = 0 V 00 na I GSSR Gae - Body Leakage, Reverse V GS = -0 V, V S = 0 V -00 na ON CHARACTERISTICS (Noe ) V GS(h) Gae Threshold Volage V S = V GS, I = 50 µa.5 3 V T J = 5 C 0.8. R S(ON) Saic rain-source On-Resisance V GS = 4.5 V, I =.8 A Ω T J = 5 C V GS = 0 V, I = 3.4 A I (on) On-Sae rain Curren V GS = 4.5 V, V S = 5 V 5 A V GS = 0 V, V S = 5 V 0 G FS Forward Transconducance V GS = 5 V, I =.8 A 4. S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = 30 V, V GS = 0 V, 4 pf C oss Oupu Capaciance f =.0 MHz 70 pf C rss Reverse Transfer Capaciance 7 pf SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time V = 30 V, I = 3 A, 6 ns r Turn - On Rise Time V GEN = 0 V, R GEN = Ω 4 5 ns (off) Turn - Off elay Time 5 8 ns f Turn - Off Fall Time 0 8 ns Q g Toal Gae Charge V S = 0 V, nc Q gs Gae-Source Charge I =.8 A, V GS = 4.5 V 0.8 nc Q gd Gae-rain Charge.4 nc NT04L Rev.
3 Elecrical Characerisics (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Coninuous rain-source iode Forward Curren.3 A V S rain-source iode Forward Volage V GS = 0 V, I S =.3 A (Noe ) V rr Reverse Recovery Time V GS = 0 V, I F =.3 A di F /d = 00 A/µs 40 ns Noes:. P () = TJ TA = T J T A = I R θja is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he R θja () R θjc+r θca () () R S(ON)@TJ solder mouning surface of he drain pins. R θjc is guaraneed by design while R θca is defined by users. For general reference: Applicaions on 4.5"x5" FR-4 PCB under sill air environmen, ypical R θja is found o be: a. 4 o C/W wih in of oz copper mouning pad. b. 95 o C/W wih in of oz copper mouning pad. c. 0 o C/W wih 0.03 in of oz copper mouning pad. a b c Scale : on leer size paper. Pulse Tes: Pulse Widh < 300µs, uy Cycle <.0%. NT04L Rev.
4 Typical Elecrical Characerisics I, RAIN-SOURCE CURRENT (A) V GS = 0V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS =3.0V V S, RAIN-SOURCE VOLTAGE (V) Figure. On-Region Characerisics I, RAIN CURRENT (A) Figure. On-Resisance Variaion wih Gae Volage and rain Curren. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I =.8A V GS = 4.5V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = 4.5V GS T = 5 C J 5 C -55 C T, JUNCTION TEMPERATURE ( C) J I, RAIN CURRENT (A) Figure 3. On-Resisance Variaion wih Temperaure. Figure 4. On-Resisance Variaion wih rain Curren and Temperaure. I, RAIN CURRENT (A) V S = 5V T = -55 C J 5 C 5 C V GS(h), NORMALIZE GATE-SOURCE THRESHOL VOLTAGE V S = V GS I = 50µA V, GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characerisics T, JUNCTION TEMPERATURE ( C) J Figure 6. Gae Threshold Variaion wih Temperaure. NT04L Rev.
5 S SS Typical Elecrical Characerisics BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = 50µA I, REVERSE RAIN CURRENT (A) V GS = 0V T = 5 C J 5 C -55 C T, JUNCTION TEMPERATURE ( C) J V S, BOY IOE FORWAR VOLTAGE (V) Figure 7. Breakdown Volage Variaion wih Temperaure. Figure 8. Body iode Forward Volage Variaion wih Curren and Temperaure. CAPACITANCE (pf) f = MHz V GS = 0V C iss C oss C rss V, GATE-SOURCE VOLTAGE (V) GS I =.8A V S = 5V 0V 0V V, RAIN TO SOURCE VOLTAGE (V) S Q, GATE CHARGE (nc) g Figure 9. Capaciance Characerisics. Figure 0. Gae Charge Characerisics. V IN V R L V OUT d(on) on r 90% d(off) off 90% f V GS V OUT R GEN 0% G UT 90% 0% INVERTE S V IN 50% 50% 0% PULSE WITH Figure. Swiching Tes Circui. Figure. Swiching Waveforms. NT04L Rev.
6 Typical Thermal Characerisics g FS, TRANSCONUCTANCE (SIEMENS) V S = 5V T = -55 C J 5 C 5 C I, RAIN CURRENT (A) STEAY-STATE POWER ISSIPATION (W) c b 4.5"x5" FR-4 Board o T A = 5 C Sill Air oz COPPER MOUNTING PA AREA (in ) a Figure 3. Transconducance Variaion wih rain Curren and Temperaure. Figure 4. SOT-3 Maximum Seady- Sae Power issipaion versus Copper Mouning Pad Area. I, STEAY-STATE RAIN CURRENT (A) 4 3 c b 4.5"x5" FR-4 Board T = 5 o C A Sill Air V = 4.5V GS oz COPPER MOUNTING PA AREA (in ) a I, RAIN CURRENT (A) RS(ON) LIMIT V = 4.5V GS SINGLE PULSE R θ JA =See Noec T A= 5 C 00ms s 0s C 0ms 0us 00us V, RAIN-SOURCE VOLTAGE (V) S Figure 5. Maximum Seady- Sae rain Curren versus Copper Mouning Pad Area. Figure 6. Maximum Safe Operaing Area. = r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE Single Pulse P(pk) R () = r() * R θ JA θ JA R = See Noe c θ JA T J - T A = P * R () θ JA uy Cycle, = / , TIME (sec) Figure 7. Typical Transien Thermal Impedance Curve. Remark: Thermal characerizaion performed under he condiions of Noe c. Should beer hermal design employs, R θja will be lower and reach hermal equivalen sooner. NT04L Rev.
7 SOT-3 Tape and Reel aa and Package imensions SOT-3 Packaging Configuraion: Figure.0 Cusomized Label F63TNR Label Anisaic Cover Tape Saic issipaive Embossed Carrier Tape Packaging escripion: SOT-3 pars are shipped in ape. The carrier ape is made from a dissipaive (carbon filled) polycarbonae resin. The cover ape is a mulilayer film (Hea Acivaed Adhesive in naure) primarily composed of polyeser film, adhesive layer, sealan, and ani-saic sprayed agen. These reeled pars in sandard opion are shipped wih,500 unis per 3" or 330cm diameer reel. The reels are dark blue in color and is made of polysyrene plasic (anisaic coaed). Oher opion comes in 500 unis per 7" or 77cm diameer reel. This and some oher opions are furher described in he Packaging Informaion able. These full reels are individually barcode labeled and placed inside a sandard inermediae box (illusraed in figure.0) made of recyclable corrugaed brown paper. One box conains wo reels maximum. And hese boxes are placed inside a barcode labeled shipping box which comes in differen sizes depending on he number of pars shipped. F85 04 F85 04 F85 04 F85 04 SOT-3 Packaging Informaion Packaging Opion Sandard (no flow code) 84Z Packaging ype TNR TNR Qy per Reel/Tube/Bag, Reel Size 3" ia 7" ia Box imension (mm) 343x64x343 84x87x47 Max qy per Box 5,000,000 Weigh per uni (gm) Weigh per Reel (kg) Noe/Commens 343mm x 34mm x 64mm Inermediae box for Sandard SOT-3 Uni Orienaion F63TNR Label 84mm x 84mm x 47mm Pizza Box for 84Z Opion F63TNR Label F63TNR Label sample LOT: CBVK74B09 QTY: 3000 SOT-3 Tape Leader and Trailer Configuraion: Figure.0 FSI: PNA SPEC: /C: 984 QTY: SPEC REV: /C: QTY: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Trailer Tape 300mm minimum or 38 empy pockes Componens Leader Tape 500mm minimum or 6 empy pockes Sepember 999, Rev. B
8 SOT-3 Tape and Reel aa and Package imensions, coninued SOT-3 Embossed Carrier Tape Configuraion: Figure 3.0 T P0 0 E F K0 Wc B0 E W Tc A0 P User irecion of Feed imensions are in millimeer Pkg ype A0 B0 W 0 E E F P P0 K0 T Wc Tc SOT-3 (mm) / / / / / /-0.0 min / / / / / / /-0.0 Noes: A0, B0, and K0 dimensions are deermined wih respec o he EIA/Jedec RS-48 roaional and laeral movemen requiremens (see skeches A, B, and C). 0 deg maximum mm maximum B0 Typical componen caviy cener line mm maximum 0 deg maximum componen roaion Skech A (Side or Fron Secional View) Componen Roaion SOT-3 Reel Configuraion: Figure 4.0 A0 Skech B (Top View) Componen Roaion Typical componen cener line Skech C (Top View) Componen laeral movemen W Measured a Hub im A Max im A max im N 7" iameer Opion See deail AA B Min im C See deail AA W3 im min 3" iameer Opion W max Measured a Hub ETAIL AA Tape Size Reel Opion imensions are in inches and millimeers im A im B im C im im N im W im W im W3 (LSL-USL) mm 7" ia / / / / mm 3" ia / / / / July 999, Rev. B
9 SOT-3 Tape and Reel aa and Package imensions, coninued SOT-3 (FS PKG Code 47) : Scale : on leer size paper Par Weigh per uni (gram): 0.46 Sepember 999, Rev. C
10 TRAEMARKS The following are regisered and unregisered rademarks Fairchild Semiconducor owns or is auhorized o use and is no inended o be an exhausive lis of all such rademarks. ISCLAIMER ACEx CoolFET CROSSVOLT E CMOS TM FACT FACT Quie Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quie Series SuperSOT -3 SuperSOT -6 SuperSOT -8 TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life suppor devices or sysems are devices or sysems which, (a) are inended for surgical implan ino he body, or (b) suppor or susain life, or (c) whose failure o perform when properly used in accordance wih insrucions for use provided in he labeling, can be reasonably expeced o resul in significan injury o he user. PROUCT STATUS EFINITIONS efiniion of Terms. A criical componen is any componen of a life suppor device or sysem whose failure o perform can be reasonably expeced o cause he failure of he life suppor device or sysem, or o affec is safey or effeciveness. aashee Idenificaion Produc Saus efiniion Advance Informaion Preliminary No Idenificaion Needed Formaive or In esign Firs Producion Full Producion This daashee conains he design specificaions for produc developmen. Specificaions may change in any manner wihou noice. This daashee conains preliminary daa, and supplemenary daa will be published a a laer dae. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. This daashee conains final specificaions. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. Obsolee No In Producion This daashee conains specificaions on a produc ha has been disconinued by Fairchild semiconducor. The daashee is prined for reference informaion only.
NDT014 N-Channel Enhancement Mode Field Effect Transistor
Sepember 996 NT4 N-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures Power SOT N-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high
More informationNDS8434A Single P-Channel Enhancement Mode Field Effect Transistor
March 997 NS8434A Single P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures SO-8 P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationNDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor
February 99 NS9959 ual N-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures These N-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high
More informationNDH834P P-Channel Enhancement Mode Field Effect Transistor
May 997 NH834P P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -8 P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationNDT452P P-Channel Enhancement Mode Field Effect Transistor
Sepember 996 NT452P P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures Power SOT P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationNDT452AP P-Channel Enhancement Mode Field Effect Transistor
une 996 NT45AP P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures Power SOT P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high
More informationNDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's
More informationNDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor
January 997 NS3AN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -3 N-Channel logic level enhancemen mode power field effec ransisors are produced using
More informationNDS9435A Single P-Channel Enhancement Mode Field Effect Transistor
May 996 NS9435A Single P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high
More informationNDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 996 NS356P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationNDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor
Sepember 996 NS356AP P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -3 P-Channel logic level enhancemen mode power field effec ransisors are produced
More informationNDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
April 996 NP45L / NB45L N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These logic level N-Channel enhancemen mode power field effec ransisors are produced using
More informationNDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor
February 996 NS99A ual P-Channel Enhancement Mode Field Effect Transistor General escription Features These P-Channel enhancement mode power field effect -.9A, -V. R S(ON) =.Ω @ V = -V. transistors are
More informationNDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor
March 996 NS8947 ual P-Channel Enhancement Mode Field Effect Transistor General escription Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,
More informationNDT454P P-Channel Enhancement Mode Field Effect Transistor
June 996 NT454P P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures Power OT P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high
More informationFeatures A, -25 V. R DS(ON) Symbol Parameter Ratings Units
FG34P igital FET, P-Channel July FG34P General escription This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor s proprietary, high cell density, MOS technology.
More informationNDS8852H Complementary MOSFET Half Bridge
February 996 NS885H Complementary MOSFET Half Bridge General escription Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, MOS technology.
More informationFDC6301N Dual N-Channel, Digital FET
September FC6N ual N-Channel, igital FET General escription These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, MOS
More informationNDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor
NS99A ual N & P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures These dual N- and P-channel enhancemen mode power field effec ransisors are produced using ON Semiconducors proprieary,
More informationFDC6322C Dual N & P Channel, Digital FET
November 997 FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density,
More information1.3 A, 20 V. R DS(ON) = 25 C unless otherwise noted. Symbol Parameter NDS331N Units V DSS. Drain-Source Voltage 20 V V GSS
NSN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These N-Channel logic level enhancemen mode power field effec ransisors are produced using ON Semiconducor's proprieary,
More informationFeatures. R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q2 Q1 Units
Dual Notebook Power Supply N-Channel PowerTrench SyncFet September General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide
More informationSingle N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units
F94 ingle N-Channel Enhancement Mode Field Effect Transistor April F94 General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Par of To learn more abou ON Semiconducor, please visi our websie a www.onsemi.com ON Semiconducor and he ON Semiconducor logo are rademarks of Semiconducor Componens Indusries, LLC dba ON Semiconducor
More information2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
November 995 N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's
More informationNDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's
More informationAO V Complementary Enhancement Mode Field Effect Transistor
AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used
More informationDual N & P-Channel Enhancement Mode Field Effect Transistor. Features R DS(ON) = V GS = 4.5 V G2 6 Q1(N) TA=25 o C unless otherwise noted
Dual N & P-Channel Enhancement Mode Field Effect Transistor May General Description These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild s proprietary, high cell
More informationV DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2
3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More informationV DS I D (at V GS =-10V) R DS(ON) (at V GS = -4.5V) 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The combines advanced rench MOFET echnology wih a low resisance package o provide exremely low R (ON). This device is ideal for load swich and baery proecion applicaions.
More informationTop View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.
V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion
More informationTop View. Top View S2 G2 S1 G1
AO49 3V Complemenary MOSFET General Descripion AO49 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. This complemenary N and P channel MOSFET configuraion is ideal for low
More informationIXFK120N65X2 IXFX120N65X2
X2-Class HiPerFET TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic iode Preliminary Technical Informaion IXFK2N65X2 IXFX2N65X2 V SS = 6 I 25 = 2A R S(on) 24m TO-264 (IXFK) Symbol Tes
More informationFeatures. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. T A=25 o C unless otherwise noted
F77A N-Channel Logic Level PowerTrench MOFET January F77A General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially
More informationV DS. 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The AO4449 uses advanced rench echnology o provide excellen R(ON), and ulralow low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More information= 25 o C unless other wise noted Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage V. Gate-Source Voltage 8-8 V I D
November 998 FG63C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
More informationTrenchMV TM Power MOSFET
Preliminary Technical Informaion TrenchMV TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed V DSS = V I D25 = A R DS(on) 7. mω TO-263 (IXTA) Symbol Tes Condiions Maximum Raings V DSS = 25 C o 175
More informationIXTA96P085T IXTP96P085T IXTH96P085T
TrenchP TM Power MOSFETs P-Channel Enhancemen Mode Avalanche Raed IXTA96P85T IXTP96P85T V DSS = - 85V I D25 = - 96A R DS(on) 13mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Tes Condiions Maximum Raings V DSS
More informationonlinecomponents.com OPTOLOGIC OPTICAL INTERRUPTER SWITCH QVE00112 PACKAGE DIMENSIONS FEATURES 6/10/04
PACKAGE DIMENSIONS.714 (18.15).123 (3.125).189 (4.82).14 (.356).327 (8.31) Ø 3.3.1 (2.54).173 (4.4) OPTICAL C L 13.78 (35) ±.275 (7).316 (8.25) GRN WHT.464 (11.8).143 (3.625).118 (3.) GRY.173 (4.4).246.276
More informationS G V DS V GS Pulsed Drain Current B -15 Schottky reverse voltage Continuous Forward Current A F I DM V KA
ON473 2V PChannel MOSFET wih Schoky Diode General Descripion The ON473 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. Schoky diode is provided o faciliae he implemenaion
More informationFDS V P-Channel PowerTrench MOSFET
F4685 4V P-Channel PowerTrench MOFET Features 8. A, 4 V R (ON) =.7 Ω @ V G = V R (ON) =.35 Ω @ V G = 4.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and
More informationIXGH48N60C3D1. GenX3 TM 600V IGBT with Diode V CES = 600V I C110. = 48A V CE(sat) 2.5V t fi(typ) = 38ns. High speed PT IGBT for kHz Switching
GenX3 TM 6V IGBT wih Diode High speed PT IGBT for 4-1kHz Swiching IXGH48N6C3D1 V CES = 6V 11 = 48A V CE(sa) 2.V fi(yp) = 38ns TO-247 Symbol Tes Condiions Maximum Raings V CES = C o C 6 V V CGR = C o C,
More informationFeatures. = 25 C unless otherwise noted. Symbol Parameter Q2 Q1 Units. A - Pulsed (Note 1c & 1d)
May 28 Dual Notebook Power Supply N-Channel PowerTrench in SO-4 Package General Description The is designed to replace two single SO- 8 MOSFETs in DC to DC power supplies. The high-side switch () is designed
More informationFeatures. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted
FP667AL/FB667AL N-Channel Logic Level PowerTrench MOFET eneral escription This N-Channel Logic Level MOFET has been designed specifically to improve the overall efficiency of C/C converters using either
More informationBS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
April 995 BS70 / MMBF70 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary,
More informationFeatures. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D
FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationFDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET
FC55 P-Channel Power Trench MOSFET -8 V, -. A, 8 mω Features Max r S(on) = 8 mω at V S = - V, I = -. A Max r S(on) = mω at V S = -.5 V, I = -.9 A High performance trench technology for extremely low r
More informationFeatures. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted
FP745L/FB745L N-Channel Logic Level PowerTrench MOFET eneral escription This N-Channel Logic Level MOFET has been designed specifically to improve the overall efficiency of C/C converters using either
More informationI D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel
AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS
More informationPart Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel
Small Signal Fas Swiching Diode Feaures These diodes are also available in oher case syles including he DO- case wih he ype designaion N8, he MiniMELF case wih he ype designaion LL8, and he SOT- case wih
More informationFDS V P-Channel PowerTrench MOSFET
F685 V P-Channel PowerTrench MOFET Features 8. A, V R (ON) =.7 Ω @ V G = V R (ON) =.35 Ω @ V G =.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and current
More informationSilicon Diffused Power Transistor
Philips Semiconducors Silicon Diffused Power Transisor Produc specificaion GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFeatures 3.3 A, 20 V. V F < A (T J = 125 o C). V F < A. V F < A. TA=25 o C unless otherwise noted
FFSP Integrated P-hannel MOSFET and Schottky iode October FFSP General escription The FFSP combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop
More information2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current
More informationType Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2
SMBT94...MMBT94 NPN Silicon Swiching Transisors High D curren gain:. ma o ma Low collecoremier sauraion volage For SMBT94S: Two (galvanic) inernal isolaed ransisors wih good maching in one package omplemenary
More informationFDG6322C Dual N & P Channel Digital FET
FG6C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationDescription. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 250 V V GSS Gate to Source Voltage ±30 V
FDA33N25 N-Channel MOSFET 250V, 33A, 0.094Ω Features R DS(on) = 0.088Ω ( Typ.)@ V GS = 0V, I D = 6.5A Low gate charge ( Typ. 36nC) Low C rss ( Typ. 35pF) Fast switching Improved dv/dt capability RoHS compliant
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol
3V NChannel AlphaMOS General escription Latest Trench Power AlphaMOS (αmos LV) technology Very Low RS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
More informationBottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel
YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile
More informationAO7401 P-Channel Enhancement Mode Field Effect Transistor
Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,
More informationS S. Top View Bottom View
YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain
More informationAO3411 P-Channel Enhancement Mode Field Effect Transistor
January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate
More information2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information
YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state
More informationN-Channel 8 V (D-S) MOSFET
Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision
More informationFDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m
F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection
More informationFDV301N Digital FET, N-Channel
FVN igital FET, N-Channel General escription This N-Channel logic level enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, MOS technology. This
More informationistributed by: www.ameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. 27002T -CHAEL EHACEMET MOE FIEL EFFECT TRASISTOR Features EW PROUCT Low On-Resistance
More informationV DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high-speed swiching npn ransisor wih inegraed damper diode in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers.
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved RBSOA performance
More information500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
More informationP-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
More informationDisribued by: www.jameco.com -800-83-44 The conen and copyrighs of he aached maerial are he propery of is owner. Preferred Device Schoky Barrier Diodes These Schoky barrier diodes are designed for high
More informationFeatures. Ultra-low Q g x R DS(ON) figure-of-merit F202. Top. T A =25 o C unless otherwise noted
P-Channel 2.5V pecified PowerTrench BGA MOFET January 24 General Description Combining Fairchild s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the minimizes both PCB
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high speed swiching npn ransisor in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers. Feaures excepional olerance
More informationN-Channel 30 V (D-S) MOSFET
New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com
More informationTO-92 SOT-23 Mark: 2J. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN3640 MMBT3640 C PN3640 / MMBT3640 C B E TO-92 SOT-23 Mark: 2J B E PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 ma. Sourced from
More informationP-Channel 20 V (D-S) MOSFET
Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES
More informationAO4620 Complementary Enhancement Mode Field Effect Transistor
AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationN-Channel 20 V (D-S) MOSFET
Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--
More informationSMPS MOSFET. V DSS R DS(on) max (mω)
P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche
More informationJanuary 2007 FDM6296 Single N-Channel Logic-Level PowerTrench MOSFET 30V,11.5A, 10.5mΩ Features. Application. Top G S S S
January 007 FM696 ingle N-Channel Logic-Level PowerTrench MOFET 30V,.5A,.5mΩ Features Max r (on) =.5mΩ at V G = V, I =.5A Max r (on) = 5mΩ at V G =.5V, I = A Low Qg, Qgd and Rg for efficient switching
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely
More informationLM79XX/A (KA79XX, MC79XX) FIXED VOLTAGE REGULATOR (NEGATIVE)
3-ERMINAL 1A NEGAIE OLAGE REGULAORS he LM79XX series of three-terminal negative regulators are available in O-220 package and with several fixed output voltages, making them useful in a wide range of applications.
More informationApplication. Bottom. Pin 1. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage ±20 V
FMC888 N-Channel Power Trench MOFET 3V, 5A, 9mΩ Features Max r (on) = 9mΩ at V G = V, I = 9.A Max r (on) = 3mΩ at V G =.5V, I = 7.A High performance trchnology for extremely low r (on) Termination is Lead-free
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper diode in a plasic full-pack envelope inended for use in horizonal deflecion
More informationAO4802 Dual N-Channel Enhancement Mode Field Effect Transistor
July 2 AO482 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO482 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. They offer operation
More informationPower MOSFET Stage for Boost Converters
UM 33-5N Power MOSFET Sage for Boos Converers Module for Power Facor Correcion 5 = 7 DSS = 5 R DS(on) =. Ω RRM (Diode) DSS Type 5 3 7 3 5 UM 33-5N 5 7 Symbol Condiions Maximum Raings DSS T J = 5 C o 5
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved
More informationNDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NT355L N-Channel Logic Level Enhancement Mode Field Effect Transistor eneral escription Features These logic level N-Channel enhancement mode power field effect transistors are produced using ON emiconductor's
More informationSSF7NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche
More information