BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor

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April 995 BS70 / MMBF70 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's

They can be used in most applications requiring up to 500mA DC.

High density cell design for low R DS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

1 April 995 BS70 / MMBF70 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High density cell design for low R DS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. D G S Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter BS70 MMBF70 Units V DSS Drain-Source Voltage 60 V V DGR Drain-Gate Voltage (R GS < MΩ) 60 V V GSS Gate-Source Voltage ± 0 V I D Drain Current - Continuous ma - Pulsed P D Maximum Power Dissipation mw Derate Above 5 C mw/ C T J,T STG Operating and Storage Temperature Range -55 to 50 C T L Maximum Lead Temperature for Soldering Purposes, /6" from Case for 0 Seconds THERMAL CHARACTERISTICS 300 C R θja Thermal Resistacne, Junction-to-Ambient C/W 997 Fairchild Semiconductor Corporation BS70 Rev. C / MMBF70 Rev. D

2 Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 00 µa All 60 V I DSS Zero Gate Voltage Drain Current V DS = 5 V, V GS = 0 V All µa I GSSF Gate - Body Leakage, Forward V GS = 5 V, V DS = 0 V All 0 na ON CHARACTERISTICS (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = ma All V R DS(ON) Static Drain-Source On-Resistance V GS = 0 V, I D = 00 ma All. 5 Ω g FS Forward Transconductance V DS = 0 V, I D = 00 ma BS70 30 ms V DS > V DS(on), I D = 00 ma MMBF70 30 DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS = 0 V, V GS = 0 V, All 4 40 pf C oss Output Capacitance f =.0 MHz All 7 30 pf C rss Reverse Transfer Capacitance All 7 0 pf SWITCHING CHARACTERISTICS (Note ) t on Turn-On Time V DD = 5 V, I D = 00 m A, V GS = 0 V, R GEN = 5 Ω V DD = 5 V, I D = 500 ma, V GS = 0 V, R GEN = 50 Ω t off Turn-Off Time V DD = 5 V, I D = 00 m A, V GS = 0 V, R GEN = 5 Ω Note:. Pulse Test: Pulse Width < 300µs, Duty Cycle <.0%. V DD = 5 V, I D = 500 ma, V GS = 0 V, R GEN = 50 Ω BS70 0 ns MMBF70 0 BS70 0 ns MMBF70 0 BS70 Rev. C / MMBF70 Rev. D

3 D Typical Electrical Characteristics BS70 / MMBF70 I, DRAIN-SOURCE CURRENT (A) V GS = 0V D V DS, DRAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics. R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS =4.0V I D, DRAIN CURRENT (A) Figure. On-Resistance Variation with Gate Voltage and Drain Current. 6.0 R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V = 0V GS I D = 500mA R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V = 0V GS T = 5 C J 5 C -55 C T, JUNCTION TEMPERATURE ( C) J Figure 3. On-Resistance Variation with Temperature I D, DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Drain Current and Temperature. I, DRAIN CURRENT (A) V = 0V DS T = -55 C J 5 C V, GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. 5 C V th, NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE V DS = VGS I D = ma T, JUNCTION TEMPERATURE ( C) J Figure 6. Gate Threshold Variation with Temperature. BS70 Rev. C / MMBF70 Rev. D

4 S DSS Typical Electrical Characteristics (continued) BS70 / MMBF70 BV, NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE I = 00µA D T, JUNCTION TEMPERATURE ( C) J Figure 7. Breakdown Voltage Variation with Temperature. I, REVERSE DRAIN CURRENT (A) V GS = 0V T = 5 C J 5 C -55 C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature CAPACITANCE (pf) f = MHz V GS = 0V C iss C oss C rss V GS, GATE-SOURCE VOLTAGE (V) I =500mA D V DS = 5V V, DRAIN TO SOURCE VOLTAGE (V) DS Q g, GATE CHARGE (nc) Figure 9. Capacitance Characteristics. Figure 0. Gate Charge Characteristics. V DD t on t off t d(on) tr t d(off) t f V IN R L 90% 90% V GS R GEN G D DUT V OUT Output, Vout Input, Vin 0% 50% 0% 90% 50% Inverted S 0% Pulse Width Figure. Switching Test Circuit. Figure. Switching Waveforms. BS70 Rev. C / MMBF70 Rev. D

5 Typical Electrical Characteristics (continued) I, DRAIN CURRENT (A) D RDS(ON) Limit V GS = 0V SINGLE PULSE T A = 5 C ms 0ms 00ms s 0s DC V DS, DRAIN-SOURCE VOLTAGE (V) Figure 3. BS70 Maximum Safe Operating Area. 00us I, DRAIN CURRENT (A) D RDS(ON) Limit V GS = 0V SINGLE PULSE T A = 5 C s 0s DC V DS, DRAIN-SOURCE VOLTAGE (V) Figure 4. MMBF70 Maximum Safe Operating Area. 00ms 0ms ms 00us r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = Single Pulse P(pk) R θja (t) = r(t) * R θja R = (See Datasheet) θja t t T J - T = P * R (t) A θja Duty Cycle, D = t /t t, TIME (sec) Figure 5. TO-9, BS70 Transient Thermal Response Curve. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = Single Pulse R θja (t) = r(t) * R θja R = (See Datasheet) θja T J - T = P * R (t) A θja Duty Cycle, D = t /t t, TIME (sec) P(pk) t t Figure 6. SOT-3, MMBF70 Transient Thermal Response Curve. BS70 Rev. C / MMBF70 Rev. D

6 TO-9 Tape and Reel Data TO-9 Packaging Configuration: Figure.0 FSCINT sample FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B LOT: CBVK74B09 QTY: 0000 TAPE and REEL OPTION See Fig.0 for various Reeling Styles NSID: PNN SPEC: D/C: D984 SPEC REV: B FSCINT QA REV: (FSCINT) F63TNR sample LOT: CBVK74B09 QTY: 000 FSID: PNN SPEC: D/C: D984 QTY: SPEC REV: D/C: QTY: CPN: N/F: F (F63TNR)3 5 Reels per Intermediate Box F63TNR Customized 375mm x 67mm x 375mm Intermediate Box Customized TO-9 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A,000 D6Z AMMO PACK OPTION See Fig 3.0 for Ammo Pack Options E,000 D7Z Ammo M,000 D74Z P,000 D75Z Unit weight = 0. gm Reel weight with components =.04 kg Ammo weight with components =.0 kg Max quantity per intermediate box = 0,000 units 37mm x 58mm x 35mm Immediate Box Customized 5 Ammo boxes per Intermediate Box F63TNR 333mm x 3mm x 83mm Intermediate Box FSCINT Customized (TO-9) BULK PACKING INFORMATION EOL CODE DESCRIPTION LEADCLIP DIMENSION QUANTITY J8Z TO-8 OPTION STD NO LEAD CLIP.0 K / BOX J05Z TO-5 OPTION STD NO LEAD CLIP.5 K / BOX NO EOL CODE L34Z TO-9 STANDARD STRAIGHT FOR: PKG 9, 94 (NON PROELECTRON SERIES), 96 TO-9 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 NO LEADCLIP NO LEADCLIP.0 K / BOX.0 K / BOX BULK OPTION See Bulk Packing Information table FSCINT 000 units per EO70 box for std option Anti-static Bubble Sheets 4mm x 0mm x 5mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 30mm x 83mm Intermediate box Customized FSCINT 0,000 units maximum per intermediate box for std option 00 Fairchild Semiconductor Corporation March 00, Rev. B

7 TO-9 Tape and Reel Data, continued TO-9 Reeling Style Configuration: Figure.0 Machine Option A (H) Machine Option E (J) Style A, D6Z, D70Z (s/h) Style E, D7Z, D7Z (s/h) TO-9 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 9) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 9) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 999, Rev. B

8 TO-9 Tape and Reel Data, continued TO-9 Tape and Reel Taping Dimension Configuration: Figure 4.0 P Pd Hd b Ha H HO L d L S W WO W t W t P F P DO ITEM DESCRIPTION SYMBOL DIMENSION PO Base of Package to Lead Bend b (max) User Direction of Feed Component Height Lead Clinch Height Ha HO 0.98 (+/- 0.05) (+/- 0.00) Component Base Height H (+/- 0.00) Component Alignment ( side/side ) Pd (max) Component Alignment ( front/back ) Hd 0.03 (max) Component Pitch P 00 (+/- 0.00) Feed Hole Pitch PO 00 (+/ ) Hole Center to First Lead P 0 (+0.009, -0.00) Hole Center to Component Center P 0.47 (+/ ) Lead Spread F/F 0.04 (+/- 0.00) Lead Thickness d 0.08 (+0.00, ) Cut Lead Length L 0.49 (max) Taped Lead Length L 0.09 (+0.05, -0.05) Taped Lead Thickness t 0.03 (+/ ) Carrier Tape Thickness t 0.0 (+/ ) TO-9 Reel Configuration: Figure 5.0 Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position W WO W W (+0.00, -0.09) 0.36 (+/- 0.0) (max) (+/- 0.05) Sprocket Hole Diameter DO 7 (+0.008, ) Lead Spring Out S (max) Note : All dimensions are in inches. ELECTROSTATIC SENSITIVE DEVICES D4 D ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR Customized D Reel Diameter D Arbor Hole Diameter (Standard) D (Small Hole) D Core Diameter D Hub Recess Inner Diameter D Hub Recess Depth W W W W3 Flange to Flange Inner Width W Hub to Hub Center Width W3.090 Note: All dimensions are inches D3 July 999, Rev. A

TO-9 Package Dimensions TO-9; TO-8 Reverse Lead Form (J35Z Option) (FS PKG Code 9, 94, 96) : Scale : on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit

9 TO-9 Package Dimensions TO-9; TO-8 Reverse Lead Form (J35Z Option) (FS PKG Code 9, 94, 96) : Scale : on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0. * * ; Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code 000 Fairchild Semiconductor International January 000, Rev. B

10 SOT-3 Tape and Reel Data SOT-3 Packaging Configuration: Figure.0 Customized Human Readable Antistatic Cover Tape Embossed Carrier Tape Packaging Description: SOT-3 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 77cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 0,000 units per 3" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. 3P 3P 3P 3P SOT-3 Packaging Information Packaging Option Standard (no flow code) D87Z Packaging type TNR TNR Qty per Reel/Tube/Bag 3,000 0,000 Reel Size 7" Dia 3" Box Dimension (mm) 87x07x83 343x343x64 Max qty per Box 4,000 30,000 Weight per unit (gm) Weight per Reel (kg) mm x 34mm x 64mm Intermediate box for L87Z Option SOT-3 Unit Orientation Human Readable Note/Comments Human Readable sample SOT-3 Tape Leader and Trailer Configuration: Figure.0 Human readable 87mm x 07mm x 83mm Intermediate Box for Standard Option Carrier Tape Cover Tape Trailer Tape 300mm minimum or 75 empty pockets Components Leader Tape 500mm minimum or 5 empty pockets 000 Fairchild Semiconductor International September 999, Rev. C

11 SOT-3 Tape and Reel Data, continued SOT-3 Embossed Carrier Tape Configuration: Figure 3.0 T P0 P D0 D E B0 Wc F E W Tc K0 P A0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 W D0 D E E F P P0 K0 T Wc Tc SOT-3 (8mm) 3.5 +/ / / / /-.75 +/ min / / / / / / /-0.0 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-48 rotational and lateral movement requirements (see sketches A, B, and C). 0 deg maximum mm maximum B0 Typical component cavity center line mm maximum 0 deg maximum component rotation Sketch A (Side or Front Sectional View) Component Rotation SOT-3 Reel Configuration: Figure 4.0 A0 Sketch B (Top View) Component Rotation Typical component center line Sketch C (Top View) Component lateral movement W Measured at Hub Dim A Max Dim A max Dim N 7" Diameter Option See detail AA B Min Dim C See detail AA W3 Dim D min 3" Diameter Option W max Measured at Hub DETAIL AA Tape Size Reel Option Dimensions are in inches and millimeters Dim A Dim B Dim C Dim D Dim N Dim W Dim W Dim W3 (LSL-USL) 8mm 7" Dia / / / / mm 3" Dia / / / / September 999, Rev. C

12 SOT-3 Package Dimensions SOT-3 (FS PKG Code 49) : Scale : on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): Fairchild Semiconductor International September 998, Rev. A

13 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E CMOS TM EnSigna TM FACT FACT Quiet Series FAST DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G

14 This datasheet has been download from: Datasheets for electronics components.

TO-92 SOT-23 Mark: 2J. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: 2J. TA = 25 C unless otherwise noted. Symbol Parameter Value Units PN3640 MMBT3640 C PN3640 / MMBT3640 C B E TO-92 SOT-23 Mark: 2J B E PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 ma. Sourced from