20V N-Channel Enhancement-Mode MOSFET
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- Bartholomew Craig
- 5 years ago
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1 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), = 41m RDS(ON), Vgs@2.5V, Ids@4.5 = 47m Features dvanced trench process technology High Density Cell Design For Ultra Low On-Resistance we declare that the material of product compliance with RoHS requirements. Capable of 2.5V gate drive Lower on-resistance SOT 23 (TO 236B) D Surface mount package Ordering Information Device Marking Shipping G S N /Tape&Reel LN2312LT3G N /Tape&Reel bsolute Maximum Ratings V DS V GS Symbol I =25 I =70 I DM Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage ±8 Continuous Drain Current 3, V 4.5V 4.9 Continuous Drain Current 3, V 4.5V 3.4 Pulsed Drain Current 1,2 15 Units V V P =25 Total Power Dissipation Linear Derating Factor W W/ T STG Storage Temperature Range -55 to 150 T J Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 140 /W 1/9
2 Electrical j =25 o C(unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250u V Drain-Source On-State Resistance R DS(on) V GS = 1.8V, I D = Drain-Source On-State Resistance R DS(on) V GS = 2.5V, I D = Drain-Source On-State Resistance R DS(on) V GS = 4.5V, I D = Gate Threshold Voltage V GS(th) V DS =V GS, I D = 250u V Zero Gate Voltage Drain Current I DSS V DS = 20V, V GS = 0V 1 u Gate Body Leakage I GSS V GS = +8V, V DS = 0V n Gate Resistance Rg Forward Transconductance g fs V DS = 10V, I D = 5 40 S Dynamic Total Gate Charge Q g 11.2 V DS = 10V, I D = 5 Gate-Source Charge Q gs 1.4 V Gate-Drain Charge Q GS = 4.5V gd 2.2 Turn-On Delay Time t d(on) 15 V DD = 10V, Turn-On Rise Time t r 40 Ι Turn-Off Delay Time t D = 1Α, V GEN = 4.5V d(off) 48 R Turn-Off Fall Time t G = 6Ω f 31 Input Capacitance C iss 500 V DS = 8V, V GS = 0V Output Capacitance C oss 300 f = 1.0 MHz Reverse Transfer Capacitance C rss 140 Source-Drain Diode Max. Diode Forward Current I S 1.7 Diode Forward Voltage V SD I S = 1.7, V GS = 0V 1.2 V mω nc ns pf Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us, duty cycle <2%. 3.Surface mounted on 1 in 2 copper PCB board 2/9
3 12 12 I D, Drain Current () 8 4 T =25 o C 5.0V 4.5V 3.5V 2.5V V G =2.5V ID, Drain Current () 8 4 T = 150 o C 5.0V 4.5V 3.5V 2.5V V G =2.5V V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D =3 T =25 o C 1.4 I D =4 V G =5V RDS(ON) (mω) 50 Normalized RDS(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature IS() T j =150 o C T j =25 o C Normalized VGS(th) (V) V SD, Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature T j, Junction Temperature ( o C) 3/9
4 f=1.0mhz I D =4 V GS, Gate to Source Voltage (V) V DS =10V V DS =12V V DS =16V C (pf) 100 C iss C oss C rss Q G, Total Gate Charge (nc) V DS, Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Duty factor=0.5 I D () T =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC Normalized Thermal Response (R thja ) Single Pulse P DM t T Duty factor = t/t Peak Tj = PDM x Rthja + Ta R thja = 270 /W V DS, Drain-to-Source Voltage (V) t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig 10. Effective Transient Thermal Impedance V DS 90% V G 4.5V Q G Q GS Q GD 10% V GS t d(on) t r t d(off) t f Charge Q Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit 4/9
5 SOT-23 NOTES: 1. DIMENSIONING ND TOLERNCING PER NSI L Y14.5M, CONTROLLING DIMENSION: INCH. V G B S DIM INCHES MILLIMETERS MIN MX MIN MX B C D G H D H C K J J K L S V inches mm 5/9
6 Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the peel back cover tape. Two Reel Sizes vailable (7"and 13",) SOT 23, SC 70/SOT 323, Used for utomatic Pick and Place Feed Systems SC 89, SC 88/SOT 363, SC 88/SOT 353, Minimizes Product Handling SOD 323, SOD-523 in Tape EI 481, 1, 2 Use the standard device title and add the required suffix as listed in the option table below (Table 1). Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. lso note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity. SOD-323 SC-59, SC-70, SC-75,SOT-23 SC-88, SOT-363 T1 Orientation SC-88, SOT-353 T1 Orientation Direction of Feed Typical Reel Orientations Table 1. EMBOSSED TPE ND REEL ORDERING INFORMTION Package SOT 23 SC 70/SOT 323 SC 89 SC 88/SOT-363 SC 88/SOT-353 SOD-323 Tape Width Pitch Reel Size Devices Per Reel Device (mm) mm mm(inch) and Minimum Suffix Order Quantity SOD-523 6/9
7 EMBOSSED TPE ND REEL DT FOR DISCRETES CRRIER TPE SPECIFICTIONS K t D P 0 P 2 10 Pitches Cumulative Tolerance on Tape ± 0.2mm( ± ) Top Cover Tape 0 E F W B 1 K 0 See Note 1 B 0 P Embossment Center Lines of Cavity D 1 For Components 2.0mm x 1.2mm and Larger For Machine Reference Only Including Draft and RDII Concentric round B 0 User Direction of Feed 10 o *Top Cover Tape R Min Thickness(t Bar Code Label 1 ) 0.10mm Tape and Components (0.004 )Max. Shall Pass round Radius R Bending Radius Embossed Carrier Without Damage 100 mm Maximum Component Rotation (3.937 ) Embossment 1 mm Max Typical Component Cavity Center Line Tape 1 mm(.039 ) Max 250 mm Typical Component Center Line (9.843 ) Camber (Top View) llowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm DIMENSIONS Tape Size B Max 1 D D 1 E F K P 0 P 2 RMin TMax WMax 8mm 12mm 16mm 24mm 4.55mm (.179 ) 8.2mm (.323 ) 12.1mm (.476 ) 20.1mm (.791 ) mm ( ) 1.0Min (.039 ) 1.5mm Min (.060 ) 1.75 ± 0.1mm (.069 ±.004) 3.5 ± 0.05mm (.138±.002 ) 5.5 ± 0.05mm (.217 ±.002 ) 7.5 ± 0.10mm (.295 ±.004 ) 11.5 ± 0.1mm (.453 ±.004 ) 2.4mm Max (.094 ) 6.4mm Max (.252 ) 7.9mm Max (.311 ) 11.9mm Max (.468 ) 4.0 ± 0.1mm (.157 ±.004 ) 2.0 ± 0.1mm (.079 ±.002 ) 25mm (.98 ) 30mm (1.18 ) 0.6mm (.024 ) 8.3mm (.327 ) 12 ±.30mm (.470 ±.012 ) 16.3mm (.642 ) 24.3mm (.957 ) Metric dimensions govern - English are in parentheses for reference only. NOTE 1: 0, B 0, and K 0 are determined by component size. The clearance between the components and the cavity must be within.05 mm min. to.50 mm max., NOTE 2: the component cannot rotate more than 10 o within the determined cavity. NOTE 3: If B1 exceeds 4.2 mm (.165 ) for embossed tape, the tape may not feed through all tape feeders. 7/9
8 EMBOSSED TPE ND REEL DT FOR DISCRETES 1.5mm Min (.06 ) 13.0mm ± 0.5mm (.512 ±.002 ) T Max Outside Dimension Measured at Edge 20.2mm Min (.795 ) 50mm Min (1.969 ) Full Radius G Inside Dimension Measured Near Hub Size Max G T Max 330mm ( ) 8.4mm+1.5mm, -0.0 ( , -0.00) 14.4mm (.56 ) 12mm 330mm ( ) 12.4mm+2.0mm, -0.0 ( , -0.00) 18.4mm (.72 ) 16mm 360mm ( ) 16.4mm+2.0mm, -0.0 ( , -0.00) 22.4mm (.882 ) 24 mm 360mm ( ) 24.4mm+2.0mm, -0.0 ( , -0.00) 30.4mm (1.197 ) Reel Dimensions Metric Dimensions Govern English are in parentheses for reference only Storage Conditions Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred) Humidity: 30 to 80 RH (40 to 60 is preferred ) Recommended Period: One year after manufacturing (This recommended period is for the soldering condition only. The characteristics and reliabilities of the products are not restricted to this limitation) 8/9
9 Shipment Specification LBEL LBEL CPN LBEL Dim(Unit:mm) 195mm*195mm*150mm 10 Reel 3000PCS/Reel 8000PCS/Reel (SOT-723,SOD-723) 10Reel/Inner Box 30KPCS/Inner Box 80KPCS/Inner Box (SOT-723,SOD-723) Dim(Unit:mm) 460mm*400mm*420mm LBEL MRK 乐山无线电股份有限公司 Leshan Radio Company,Ltd. 12 Inner Box/Carton 360KPCS/Carton 960KPCS/Carton (SOT-723,SOD-723) 9/9
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Type SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic level BSS131 Product Summary V DS 24 V R DS(on),max 14 Ω I D.1 A dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-23
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