PN4258. Symbol Parameter Value Units
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1 PN8 PN8 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to ma. Sourced from process 6. TO-9. Emitter. Base 3. ollector Absolute Maximum Ratings* T A = unless otherwise noted Symbol Parameter alue Units EO ollector-emitter oltage - BO ollector-base oltage - EBO Emitter-Base oltage -. I ollector urrent - ontinuous - ma T J, T STG Operating and Storage Junction Temperature Range - ~ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES:. These ratings are based on a maximum junction temperature of degrees.. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical haracteristics T A = unless otherwise noted Symbol Parameter Test ondition Min. Max. Units Off haracteristics (BR)ES ollector-emitter Breakdown oltage * I = -µa, BE = - EO(SUS) ollector-emitter Sustaining oltage * I =- 3.mA, I B = - (BR)BO ollector-base Breakdown oltage I = -µa, I E = - (BR)EBO Emitter-Base Breakdown oltage I E = -µa, I = -. I ES ollector utoff urrent E = -6., BE = E = -6., BE =, T A = 6 On haracteristics h FE D urrent Gain I = -.ma, E = -. I = -ma, E = -3. I = -ma, E = -. E (sat) ollector-emitter Saturation oltage I = -ma, I B = -.ma I = -ma, I B = -.ma BE (sat) Base-Emitter Saturation oltage I = -ma, I B = -.ma I = -ma, I B = -.ma Small Signal haracteristics f T urrent Gain Bandwidth Product I = -ma, E = -., f = MHz I = -ma, E = -, f = MHz iob Input apacitance BE = -., I =, f =.MHz 3. pf cb ollector-base apacitance BE = -., I E =, f =.MHz 3. pf 7 7 µa µa MHz MHz Fairchild Semiconductor orporation Rev. B, November
2 Electrical haracteristics T A = unless otherwise noted (ontinued) Symbol Parameter Test ondition Min. Max. Units Switching haracteristics t on Turn-on Time, BE (off) = ns t d Delay Time I = -ma, I B = -.ma ns t r Rise Time ns t off Turn-off Time, I = -ma, ns t s Storage Time I B = I B = -ma ns t f Fall Time ns t s Storage Time I = -ma, I B = I B = -ma ns * Pulse Test: Pulse Width 3ms, Duty ycle.% PN8 Thermal haracteristics T A = unless otherwise noted Symbol Parameter Max. Units P D Total Device Dissipation Derate above 3.8 mw mw/ R θj Thermal Resistance, Junction to ase /W R θja Thermal Resistance, Junction to Ambient 37 /W Fairchild Semiconductor orporation Rev. B, November
3 Typical hracteristics h - TYPIAL PULSED URRENT GAIN FE - vs ollector urrent... I - OLLETOR URRENT (ma) =. E - OLLETOR EMITTER OLTAGE () ESAT oltage vs ollector urrent β =. I - OLLETOR URRENT (ma) - PN8 - BASE EMITTER OLTAGE () BESAT Figure. Typical Pulsed urrent Gain vs ollector urrent oltage vs ollector urrent β = -. I - OLLETOR URRENT (ma) Figure 3. Base-Emitter Saturation oltage vs ollector urrent - BASE EMITTER ON OLTAGE () BEON Figure. ollector-emitter Saturation oltage vs ollector urrent ollector urrent. I - OLLETOR URRENT (ma) - = E Figure. Base-Emitter On oltage vs ollector urrent I - OLLETOR URRENT (na) BO. = B. 7 T A - AMBIENT TEMPERATURE ( ) Figure. ollector utoff urrent vs Ambient Temperature P - POWER DISSIPATION (mw) D SOT-3 TO-9 7 o TEMPERATURE ( ) Figure 6. Power Dissipation vs Ambient Temperature Fairchild Semiconductor orporation Rev. B, November
4 Typical hracteristics (ontinued) APAITANE (pf) I = ibo I = obo REERSE BIAS OLTAGE () F =. MHz - - OLLETOR OLTAGE () E MHz -6 MHz - 6 MHz - MHz MHz 9 MHz MHz. I - OLLETOR URRENT (ma) PN8 Figure 7. Input/Output apacitance vs Reverse Bias oltage Figure 8. ontours of onstant Gain Bandwidth Produtct (f T ) SWITHING TIMES (ns) - REERSE BASE-EMITTER OLTAGE () BE(O) t r t d I - OLLETOR URRENT (ma) 3 Figure 9. Switching Times vs ollector urrent I = I B = I B BE (O) = Delay Time vs. Turn On Base urrent / Reverse Emitter oltage t = ns d 3. ns I = ma. 3 I - TURN ON BASE URRENT (ma) B ns 8. ns. ns Figure. Delay Time vs Turn On Base urrent/reverse Emitter oltage t s t f SWITHING TIMES (ns) B I = ma I B = I B = ma BE (O) = t f t r t s - T A - AMBIENT TEMPERATURE ( ).. Figure. Switching Times vs Ambient Temperature Figure. Rise Time vs ollector and Turn-On Base urrents t d Turn-On Base urrents. I - OLLETOR URRENT (ma) t =. ns f. ns ns ns Fairchild Semiconductor orporation Rev. B, November
5 Typical hracteristics (ontinued) B t = ns s I - TURN-OFF BASE URRENT (ma) B 8. ns. ns I =. ma 3. ns B 3 Turn-On / Turn-Off Base urrents I = ma 3 I - TURN-OFF BASE URRENT (ma) B t = ns s ns ns 6. ns PN8 Figure 3. Storage Time vs Turn-On/Turn-Off Base urrent Figure. Storage Time vs Turn-On/Turn-Off Base urrents B 8 6 t = ns s 6 8 I - TURN-OFF BASE URRENT (ma) B ns ns. ns Figure. Storage Time vs Turn-On/Turn-Off Base urrent I = ma B t = ns f Base urrents I - TURN-OFF BASE URRENT (ma) B ns ns I =. ma Figure 6. Fall Time vs Turn-On/Turn-Off Base urrents B 3 t = 6. ns f Base urrents I = ma 3 I - TURN-OFF BASE URRENT (ma) B. ns. ns Figure 7. Fall Time vs Turn-On/Turn-Off Base urrents B 8 6 t = 8. ns f I = ma 6 8 I - TURN-OFF BASE URRENT (ma) B 6. ns. ns 3. ns Figure 8. Fall Time vs Turn-On/Turn-Off Base urrents Fairchild Semiconductor orporation Rev. B, November
6 Test ircut PN8 BB E = -.. KΩ 3 Ω IN PW = ns Z IN = Ω t r. ns Ω. µf. KΩ To Sampling Scope Z IN kω t r <. ns t ON BB = ground IN = -.8 t OFF BB = 8. IN = 9.8 I = ma, I B =. ma, I B =. ma Figure. t on, t off Test ircuit Fairchild Semiconductor orporation Rev. B, November
7 Package Dimensions PN8 TO MAX.6 ±..7TYP [.7 ±.]. ± TYP [.7 ±.] 3.6 ±. (R.9) (.).7 ±..8 ± Dimensions in Millimeters Fairchild Semiconductor orporation Rev. B, November
8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx ActiveArray Bottomless oolfet ROSSOLT DOME EcoSPARK E MOS EnSigna FAT FAT Quiet series FAST FASTr FRFET GlobalOptoisolator GTO HiSe I Across the board. Around the world. The Power Franchise Programmable Active Droop ImpliedDisconnect ISOPLANAR LittleFET MicroFET MicroPak MIROWIRE MSX MSXPro OX OXPro OPTOLOGI OPTOPLANAR PAMAN POP Power7 PowerTrench QFET QS QT Optoelectronics Quiet Series Rapidonfigure Rapidonnect SILENT SWITHER SMART START SPM Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UH UltraFET X DISLAIMER FAIRHILD SEMIONDUTOR RESERES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Fairchild Semiconductor orporation Rev. I
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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