NDS8434A Single P-Channel Enhancement Mode Field Effect Transistor

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March 997 NS8434A Single P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures SO-8 P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's

These devices are paricularly suied for low volage applicaions such as noebook compuer power managemen and oher baery powered circuis where fas swiching, low in-line power loss, and resisance o

1 March 997 NS8434A Single P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures SO-8 P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology. This very high densiy process is especially ailored o minimize on-sae resisance and provide superior swiching performance. These devices are paricularly suied for low volage applicaions such as noebook compuer power managemen and oher baery powered circuis where fas swiching, low in-line power loss, and resisance o ransiens are needed A, - V. R S(ON) =.4 V GS = -4. V R S(ON) =.3 V GS = -.V. High densiy cell design for exremely low R S(ON). High power and curren handling capabiliy in a widely used surface moun package Absolue Maximum Raings T A = C unless oherwise noed Symbol Parameer NS8434A Unis V SS rain-source Volage - V V GSS Gae-Source Volage ±8 V I rain Curren - Coninuous (Noe a) - Pulsed -7.8 A P Maximum Power issipaion (Noe a). W - (Noe b). (Noe c) T,T STG Operaing and Sorage Temperaure Range - o C THERMAL CHARACTERISTICS R θa Thermal Resisance, uncion-o-ambien (Noe a) C/W R θc Thermal Resisance, uncion-o-case (Noe ) C/W 997 Fairchild Semiconducor Corporaion NS8434A Rev.

2 Elecrical Characerisics (T A = C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage V GS = V, I = - µa - V I SS Zero Gae Volage rain Curren V S = -6 V, V GS = V - µa T = C - µa I GSSF Gae - Body Leakage, Forward V GS = 8 V, V S = V na I GSSR Gae - Body Leakage, Reverse V GS = -8 V, V S = V - na ON CHARACTERISTICS (Noe ) V GS(h) Gae Threshold Volage V S = V GS, I = - µa V T = C R S(ON) Saic rain-source On-Resisance V GS = -4. V, I = -7.9 A..4 Ω T = C.3.43 V GS = -. V, I = -7. A.7.3 I (on) On-Sae rain Curren V GS = -4. V, V S = - V - A V GS = -. V, V S = - V - g FS Forward Transconducance V S = -4. V, I = -7.9 A 8 S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = - V, V GS = V, 73 pf C oss Oupu Capaciance f =. MHz pf C rss Reverse Transfer Capaciance 3 pf SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time V = - V, I = - A, 3 ns r Turn - On Rise Time V GEN = -4. V, R GEN = 6 Ω 38 7 ns (off) Turn - Off elay Time 3 ns f Turn - Off Fall Time 78 ns Q g Toal Gae Charge V S = - V, 3 nc Q gs Gae-Source Charge I = -7.9 A, V GS = -4. V 3.8 nc Q gd Gae-rain Charge 8. nc NS8434A Rev.

3 Elecrical Characerisics (T A = C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Coninuous rain-source iode Forward Curren -. A V S rain-source iode Forward Volage V GS = V, I S = -. A (Noe ) V Noes:. R θa is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θc is guaraneed by design while R θca is deermined by he user's board design. P () = T T A RθA() = T T A = RθC+RθCA() I ( ) R S(ON ) T Typical R θa for single device operaion using he board layous shown below on 4."x" FR-4 PCB in a sill air environmen: a. o C/W when mouned on a in pad of oz copper. b. o C/W when mouned on a.4 in pad of oz copper. c. o C/W when mouned on a.6 in pad of oz copper. a b c Scale : on leer size paper. Pulse Tes: Pulse Widh < 3µs, uy Cycle <.%. NS8434A Rev.

4 Typical Elecrical Characerisics I, RAIN-SOURCE CURRENT (A) V GS = -4.V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V =-.V GS V, RAIN-SOURCE VOLTAGE (V) S I, RAIN CURRENT (A) -4-3 Figure. On-Region Characerisics. Figure. On-Resisance Variaion wih rain Curren and Gae Volage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = -7.9A V GS = -4.V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS = -4.V T = C C - C T, UNCTION TEMPERATURE ( C) I, RAIN CURRENT (A) - -3 Figure 3. On-Resisance Variaion wih Temperaure. Figure 4. On-Resisance Variaion wih rain Curren and Temperaure. I, RAIN CURRENT (A) V S = - V T = - C V, GATE TO SOURCE VOLTAGE (V) GS C C - V GS(h), NORMALIZE GATE-SOURCE THRESHOL VOLTAGE.4. V S = V GS I =-µa T, UNCTION TEMPERATURE ( C) Figure. Transfer Charaerisics. Figure 6. Gae Threshold Variaion wih Temperaure. NS8434A Rev.

5 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = -µa T, UNCTION TEMPERATURE ( C) -I, REVERSE RAIN CURRENT (A)... V GS = V T = C C - C V S, BOY IOE FORWAR VOLTAGE (V) Figure 7. Breakdown Volage Variaion wih Temperaure. Figure 8. Body iode Forward Volage Variaion wih Source Curren and Temperaure. CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss -V GS, GATE-SOURCE VOLTAGE (V) 4 3 I = -7.9A V = -V S -V -V... -V, RAIN TO SOURCE VOLTAGE (V) S 3 4 Q, GATE CHARGE (nc) g Figure 9. Capaciance Characerisics. Figure. Gae Charge Characerisics. -V d(on) on r d(off) off f V IN R L 9% 9% V GS V OUT V OUT % % R GEN G UT 9% S V IN % % % PULSE WITH INVERTE Figure. Swiching Tes Circui. Figure. Swiching Waveforms. NS8434A Rev.

6 Typical Elecrical and ThermalCharacerisics (coninued) g, TRANSCONUCTANCE (SIEMENS) FS V S = - 4.V I, RAIN CURRENT (A) T = - C C C -4-3 STEAY-STATE POWER ISSIPATION (W).. b c 4."x" FR-4 Board o T A = C Sill Air oz COPPER MOUNTING PA AREA (in ) a Figure 3. Transconducance Variaion wih rain Curren and Temperaure. Figure 4. SO-8 Maximum Seady-Sae Power issipaion versus Copper Mouning Pad Area. -I, STEAY-STATE RAIN CURRENT (A) c b oz COPPER MOUNTING PA AREA (in ) a 4."x" FR-4 Board o T A = C Sill Air V = -4.V GS -I, RAIN CURRENT (A) 3... RS(ON) LIMIT V GS = -4.V SINGLE PULSE R θa = See Noe c T A A = C s s V, RAIN-SOURCE VOLTAGE (V) S C ms ms us ms Figure. Maximum Seady- Sae rain Curren versus Copper Mouning Pad Area. Figure 6. Maximum Safe Operaing Area. r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse R θa () = r() * R θa R θa = See noe c T - T A = P * R θa() uy Cycle, = / , TIME (sec) P(pk) Figure 7. Transien Thermal Response Curve. Noe: Thermal characerizaion performed using he condiions described in noe c. Transien hermal response will change depending on he circui board design. NS8434A Rev.

7 TRAEMARKS The following are regisered and unregisered rademarks Fairchild Semiconducor owns or is auhorized o use and is no inended o be an exhausive lis of all such rademarks. ISCLAIMER ACEx CoolFET CROSSVOLT E CMOS TM FACT FACT Quie Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quie Series SuperSOT -3 SuperSOT -6 SuperSOT -8 TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life suppor devices or sysems are devices or sysems which, (a) are inended for surgical implan ino he body, or (b) suppor or susain life, or (c) whose failure o perform when properly used in accordance wih insrucions for use provided in he labeling, can be reasonably expeced o resul in significan injury o he user. PROUCT STATUS EFINITIONS efiniion of Terms. A criical componen is any componen of a life suppor device or sysem whose failure o perform can be reasonably expeced o cause he failure of he life suppor device or sysem, or o affec is safey or effeciveness. aashee Idenificaion Produc Saus efiniion Advance Informaion Preliminary No Idenificaion Needed Formaive or In esign Firs Producion Full Producion This daashee conains he design specificaions for produc developmen. Specificaions may change in any manner wihou noice. This daashee conains preliminary daa, and supplemenary daa will be published a a laer dae. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. This daashee conains final specificaions. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. Obsolee No In Producion This daashee conains specificaions on a produc ha has been disconinued by Fairchild semiconducor. The daashee is prined for reference informaion only.

NDT014 N-Channel Enhancement Mode Field Effect Transistor

NDT014 N-Channel Enhancement Mode Field Effect Transistor Sepember 996 NT4 N-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures Power SOT N-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high