DATA SHEET. BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors. Philips Semiconductors DISCRETE SEMICONDUCTORS.

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1 DISCREE SEMICONDUCORS DAA SHEE BSP34; BSP34A File under Discrete Semiconductors, SC7 995 Apr 7 Philips Semiconductors

2 BSP34; BSP34A FEAURES Direct interface to C-MOS, L etc. High speed switching No secondary breakdown. DESCRIPION vertical D-MOS transistor in a O-9 variant package. APPLICAIONS Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. 3 g d PINNING - O-9 variant PIN SYMBOL DESCRIPION MAM44 s BSP34 g gate d drain 3 s source BSP34A s source g gate 3 d drain Fig. Simplified outline and symbol. CAUION he device is supplied in an antistatic package. he gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DAA SYMBOL PARAMEER CONDIIONS MIN. MAX. UNI V DS drain-source voltage (DC) 3 V V GSO gate-source voltage (DC) open drain ± V V GSth gate-source threshold voltage I D = ma; V DS =V GS.7.55 V I D drain current (DC) 7 ma R DSon drain-source on-state resistance I D = 7 ma; 7 Ω V GS = V P tot total power dissipation up to amb =5 C W 995 Apr 7

3 BSP34; BSP34A LIMIING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMEER CONDIIONS MIN. MAX. UNI V DS drain-source voltage (DC) 3 V V GSO gate-source voltage (DC) open drain ± V I D drain current (DC) 7 ma I DM peak drain current.75 A P tot total power dissipation up to amb =5 C; note W stg storage temperature C j operating junction temperature 5 C HERMAL CHARACERISICS SYMBOL PARAMEER CONDIIONS VALUE UNI R th j-a thermal resistance from junction to ambient note 5 K/W Note to the Limiting values and hermal characteristics. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum cm. CHARACERISICS j =5 C unless otherwise specified. SYMBOL PARAMEER CONDIIONS MIN. YP. MAX. UNI V (BR)DSS drain-source breakdown voltage V GS = ; I D = µa 3 V V GSth gate-source threshold voltage V DS =V GS ; I D = ma.7.55 V I DSS drain-source leakage current V GS = ; V DS = 4 V na I GSS gate leakage current V GS = ± V; V DS = ± na R DSon drain-source on-state resistance V GS = V; I D = 7 ma 7 Ω y fs forward transfer admittance V DS = 5 V; I D = 7 ma ms C iss input capacitance V GS = ; V DS = 5 V; f = MHz 6 9 pf C oss output capacitance V GS = ; V DS = 5 V; f = MHz 5 3 pf C rss reverse transfer capacitance V GS = ; V DS = V; f = MHz 5 5 pf Switching times (see Figs and 3) t on turn-on time V GS =to V; V DD = 5 V; 5 ns I D = 5 ma t off turn-off time V GS = to V; V DD = 5 V; I D = 5 ma 5 3 ns 995 Apr 7 3

4 BSP34; BSP34A V DD = 5 V % INPU 9 % I D % V 5 Ω OUPU MBB689 9 % t on t off MBB69 Fig. Switching time test circuit. Fig.3 Input and output waveforms.. P tot (W).8 MLC697 I D (A) () MLC699 t p = µs µs ms ms ms.4 P t p δ = s t p t DC 5 5 amb ( o C) 3 VDS (V) 3 Fig.4 Power derating curve. δ =.. amb =5 C. () R DSon limitation. Fig.5 DC SOAR. 995 Apr 7 4

5 BSP34; BSP34A C (pf) 8 MLC688 8 I D (ma) 6 P = W MLD39 V GS = V 7 V 6 V 6 C iss 5 V V C oss 3.5 V C rss V DS (V) 3 3 V V DS (V) V GS =. j =5 C. f = MHz. Fig.6 Capacitance as a function of drain source voltage; typical values. j =5 C. Fig.7 ypical output characteristics. 8 MLC689 8 MLC69 I D (ma) R DSon (Ω) V GS (V) V GS (V) V DS = 5 V. j =5 C. Fig.8 ypical transfer characteristics. I D = 7 ma. j =5 C. Fig.9 Drain-source on-state resistance as a function of gate-source voltage; typical values. 995 Apr 7 5

6 BSP34; BSP34A 6 handbook, R halfpage DSon MLC69. MLC696 (Ω) 5 V GS = 3 V 4 V 5 V k V.9 7 V V 3 I D (ma) o j ( C) k V GSth at = j V GSth at 5 C j =5 C. ypical V GSth at I D = ma; V DS =V GS. Fig. Drain-source on-state resistance as a function of drain current; typical values. Fig. emperature coefficient of gate-source threshold voltage..5 k MLC o j ( C) k R DSon at = j R DSon at 5 C ypical R DSon at I D = 7 ma; V GS = V. Fig. emperature coefficient of drain-source on-state resistance. 995 Apr 7 6

7 BSP34; BSP34A handbook, 3 full pagewidth MLC698 R th j-a (K/W) δ = P t p δ = t p t t p (s) 3 amb =5 C. Fig.3 ransient thermal resistance from junction to ambient as a function of pulse time; typical values. 995 Apr 7 7

8 BSP34; BSP34A PACKAGE OULINE handbook, full pagewidth.4 min 4. max.6 5. max.7 min 4.8 max max () MBC5 - Dimensions in mm. () erminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. Fig.4 O-9 variant. 995 Apr 7 8

9 BSP34; BSP34A DEFINIIONS Data Sheet Status Objective specification his data sheet contains target or goal specifications for product development. Preliminary specification his data sheet contains preliminary data; supplementary data may be published later. his data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. hese are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPOR APPLICAIONS hese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 995 Apr 7 9