Silicon Diffused Power Transistor
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1 PHE39 GENERAL DESCRIPTION The PHE39 is a silicon npn power swiching ransisor in he TO22AB envelope inended for use in high frequency elecronic lighing ballas applicaions, converers, inverers, swiching regulaors, moor conrol sysems, ec. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collecor-emier volage peak value V BE = V - 7 V V CBO Collecor-Base volage (open emier) - 7 V V CEO Collecor-emier volage (open base) - 4 V I C Collecor curren (DC) - 2 A I CM Collecor curren peak value - 24 A P o Toal power dissipaion T mb 25 C - 8 W V CEsa Collecor-emier sauraion volage I C = 5. A;I B =. A.32. V h FEsa f Fall ime I C = 5. A; V CE = 5 V I C = 5. A; I B =. A µs PINNING - TO22AB PIN CONFIGURATION SYMBOL PIN base DESCRIPTION ab c 2 collecor 3 emier b ab collecor 2 3 e LIMITING VALUES Limiing values in accordance wih he Absolue Maximum Raing Sysem (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collecor o emier volage V BE = V - 7 V V CEO Collecor o emier volage (open base) - 4 V V CBO Collecor o base volage (open emier) - 7 V I C Collecor curren (DC) - 2 A I CM Collecor curren peak value - 24 A I B Base curren (DC) - 6 A I BM Base curren peak value - 2 A P o Toal power dissipaion T mb 25 C - 8 W T sg Sorage emperaure C T j Juncion emperaure - 5 C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R h j-mb Juncion o mouning base -.56 K/W R h j-a Juncion o ambien in free air 6 - K/W March 999 Rev.
2 PHE39 STATIC CHARACTERISTICS T mb = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES,I CBO Collecor cu-off curren V BE = V; V CE = V CESM - -. ma I CES V BE = V; V CE = V CESM ; ma T j = 25 C I CEO Collecor cu-off curren V CEO = V CEOM (4V) - -. ma I EBO Emier cu-off curren V EB = 9 V; I C = A - - ma V CEOsus Collecor-emier susaining volage I B = A; I C = ma; V L = 25 mh V CEsa Collecor-emier sauraion volage I C = 5. A;I B =. A V I C = 8. A;I B =.6 A V V BEsa Base-emier sauraion volage I C = 5. A;I B =. A -..3 V I C = 8. A;I B =.6 A -..6 V h FE DC curren gain I C = 5. A; V CE = 5 V 8-4 h FEsa I C = 8. A; V CE = 5 V 6-3 DYNAMIC CHARACTERISTICS T mb = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Swiching imes (resisive load) I Con = 5 A; I Bon = -I Boff = A; R L = 75 ohms; V BB2 = 4 V; s Turn-off sorage ime µs f Turn-off fall ime.26.7 µs Swiching imes (inducive load) I Con = 5 A; I Bon = A; L B = µh; -V BB = 5 V s Turn-off sorage ime µs f Turn-off fall ime..5 µs Swiching imes (inducive load) I Con = 5A; I Bon = A; L B = µh; -V BB = 5 V; T j = C s Turn-off sorage ime µs f Turn-off fall ime -.9 µs Measured wih half sine-wave volage (curve racer). March Rev.
3 PHE39 + 5v -2R 9 % ICon 9 % IC % Horizonal Oscilloscope Verical 3R R 6V 3-6 Hz Fig.. Tes circui for V CEOsus. s on f off IB % r 3ns -IBoff Fig.4. Swiching imes waveforms wih resisive load. IC / ma VCC 25 LC VCE / V min VCEOsus Fig.2. Oscilloscope display for V CEOsus. -VBB LB T.U.T. Fig.5. Tes circui inducive load. V CC = 3 V; -V BE = 5 V; L C = 2 uh; L B = uh VCC ICon 9 % IC RL VIM p RB T.U.T. IB s off f % T Fig.3. Tes circui resisive load. V IM = -6 o +8 V V CC = 25 V; p = 2 µs; δ = p / T =.. R B and R L calculaed from I Con and I Bon requiremens. -IBoff Fig.6. Swiching imes waveforms wih inducive load. March Rev.
4 PHE PD% Normalised Power Deraing Tmb / C Fig.7. Normalised power dissipaion. PD% = PD/PD 25 C = f (T mb ) VBEsa VOLTAGE/V IC/IB = IC, COLLECTOR CURRENT/A Fig.. Base-Emier sauraion volage. Solid lines = yp values, V BEsa = f(ic); a IC/IB =5. HFE 5 VCEsa VOLTAGE/V V 5 V IC/IB = IC/A Fig.8. Typical DC curren gain. h FE = f(i C ) parameer V CE IC, COLLECTOR CURRENT/A Fig.. Collecor-Emier sauraion volage. Solid lines = yp values, V CEsa = f(ic); a IC/IB =5. VCEsa/V 2 Zh / (K/W) D= p PD p.2 D = T IB/A Fig.9. Collecor-Emier sauraion volage. Solid lines = yp values, V CEsa = f(ib); T j =25 C. A 3A 2A 4A T. E-6 E-4 E-2 E+ / s Fig.2. Transien hermal impedance. Z h j-mb = f(); parameer D = p /T March Rev.
5 PHE39 IC/A 4 VCC 2 8 LC VCL(RBSOAR) 6-5V LB PROBE POINT 4-3V 2 -V -VBB T.U.T VCEclamp/V Fig.3. Reverse bias safe operaing area (T j < T j ) for -V be = 5V,3V and V. Fig.4. Tes circui for reverse bias safe operaing area. V clamp < 7V; V cc = 5V; -V be = 5V,3V & V; L B = µh; L C = 2µH March Rev.
6 PHE39 MECHANICAL DATA Dimensions in mm Ne Mass: 2 g 4,5,3 3,7,3 2,8 5,9 min 5,8 3, no inned,3 (2x) 2 3 2,54 2,54 3, 3,5 min,9 (3x),6 2,4 Noes. Refer o mouning insrucions for TO22 envelopes. 2. Epoxy mees UL94 V a /8". Fig.5. TO22AB; pin 2 conneced o mouning base. March Rev.
7 PHE39 DEFINITIONS Daa shee saus Objecive specificaion This daa shee conains arge or goal specificaions for produc developmen. This daa shee conains preliminary daa; supplemenary daa may be published laer. Produc specificaion This daa shee conains final produc specificaions. Limiing values Limiing values are given in accordance wih he Absolue Maximum Raing Sysem (IEC 34). Sress above one or more of he limiing values may cause permanen damage o he device. These are sress raings only and operaion of he device a hese or a any oher condiions above hose given in he Characerisics secions of his specificaion is no implied. Exposure o limiing values for exended periods may affec device reliabiliy. Applicaion informaion Where applicaion informaion is given, i is advisory and does no form par of he specificaion. Philips Elecronics N.V. 999 All righs are reserved. Reproducion in whole or in par is prohibied wihou he prior wrien consen of he copyrigh owner. The informaion presened in his documen does no form par of any quoaion or conrac, i is believed o be accurae and reliable and may be changed wihou noice. No liabiliy will be acceped by he publisher for any consequence of is use. Publicaion hereof does no convey nor imply any license under paen or oher indusrial or inellecual propery righs. LIFE SUPPORT APPLICATIONS These producs are no designed for use in life suppor appliances, devices or sysems where malfuncion of hese producs can be reasonably expeced o resul in personal injury. Philips cusomers using or selling hese producs for use in such applicaions do so a heir own risk and agree o fully indemnify Philips for any damages resuling from such improper use or sale. March Rev.
Silicon Diffused Power Transistor
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