High Speed Optocoupler, Phototransistor Output, 1 MBd, 10 kv/μs CMR, Split Collector Transistor Output

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1 High Speed Opocoupler, Phooransisor Oupu, 1 MBd, 1 kv/μs CMR, Spli Collecor Transisor Oupu C 1 6 A 2 5 NC 3 4 DESCRIPTION The is an opocoupler wih a GaAlAs infrared emiing diode, opically coupled o an inegraed phoo deecor consising of a phoo diode and a high speed ransisor in a DIP-6 plasic package. The device is funcionally similar o 6N136 excep here is no base connecion and he foo prin is differen. Noise and common mode rejecion performance is enhanced by no bringing ou he base connecion. Signals can be ransmied beween wo elecrically separaed circuis up o frequencies of 2. MHz. V E C FEATURES High CMR of 1 kv/μs High speed opocoupler wihou base connecion GaAlAs emier Inegraed deecor wih phoo diode and ransisor TTL and CMOS compaible Open collecor oupu Supply volage up o 3 V High CTR Good CTR lineariy relaive o forward curren Low coupling capaciance Maerial caegorizaion: for definiions of compliance please see APPLICATIONS IGBT drivers and MOSFET driver sages Daa communicaions Programmable conrollers IPM drivers AGENCY APPROVALS UL1577, file no. E52744, double proecion cul esed o CSA 22.2 bullein 5A DIN EN (VDE 884-5), available wih opion 1 ORDERING INFORMATION S F H X # # T DIP-# Opion 6 PART NUMBER PACKAGE OPTION TAPE AND REEL 7.62 mm 1.16 mm Opion 7 Opion 9 AGENCY CERTIFIED/PACKAGE CTR (%) UL 19 DIP-6 SMD-6, opion 7 -X7, -X7T SMD-6, opion 9 -X9 VDE, UL 19 DIP-6 -X1 DIP-6, opion 6 -X16 SMD-6, opion 7 -X17, -X17T Noe Addiional opions may be possible, please conac sales office >.6 mm > 8 mm Rev. 1.8, 3-Aug-15 1 Documen Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless oherwise specified) PARAMETER CONDITIONS SYMBOL VALUE UNIT INPUT Reverse volage V R 3. V DC forward curren 25 ma Surge forward curren P 1. μs, 3 pulses/s SM 1. A Power dissipaion P diss 45 mw OUTPUT Supply volage V S -.5 o +3 V Oupu volage V O -.5 o +2 V Oupu curren I O 8 ma Power dissipaion P diss 1 mw COUPLER Sorage emperaure range T sg -55 o +15 C Ambien emperaure range T amb -55 o +1 C Juncion emperaure T j 1 C Soldering emperaure Max. 1 s, dip soldering: disance o seaing plane 1.5 mm T sld 26 C Noe Sresses in excess of he absolue maximum raings can cause permanen damage o he device. Funcional operaion of he device is no implied a hese or any oher condiions in excess of hose given in he operaional secions of his documen. Exposure o absolue maximum raings for exended periods of he ime can adversely affec reliabiliy. ELECTRICAL CHARACTERISTICS (T amb = C o 7 C unless oherwise specified, yp. values T amb = 25 C) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT inpu Forward volage = 16 ma V F V Reverse curren V R = 3 V I R μa Capaciance V R = V, f = 1 MHz C O pf Thermal resisance R hja K/W oupu Logic high supply curren = V, V O (open), V CC = 15 V, T amb = 25 C I CCH μa = V, V O (open), V CC = 15 V I CCH μa = V, V O (open), V CC = 5.5 V, T amb = 25 C I OH μa Oupu curren, oupu high = V, V O (open), V CC =15 V, T amb = 25 C I OH μa = V, V O (open), V CC =15 V I OH - 5 μa Collecor emier capaciance V CE = 5 V, f = 1 MHz C CE pf Thermal resisance R hja K/W coupler Coupling capaciance C C pf Collecor emier sauraion volage = 16 ma, I O = 2.4 ma, V CC = 4.5 V; T amb = 25 C V OL V Supply curren, logic low = 16 ma, V O open, V CC = 15 V I DD Noe Minimum and maximum values are esing requiremens. Typical values are characerisics of he device and are he resul of engineering evaluaion. Typical values are for informaion only and are no par of he esing requiremens. Rev. 1.8, 3-Aug-15 2 Documen Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 V ou 1 6 C = 1 nf V CC 5V isfh636_1 1 Ω Pulse generaor Zo = 5 Ω r, f = 5 ns duy cycle = 1 % period = 1 µs C L = 15 pf R L V O PHL 16 ma 1.5 V PLH isfh636_2 Fig. 1 - Tes Seup Fig. 2 - Swiching Time Measuremen CURRENT TRANSFER RATIO (T amb = C o 7 C unless oherwise specified, yp. values T amb = 25 C) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I C / = 16 ma, V O =.4 V, V CC = 4.5 V, T amb = 25 C CTR % = 16 ma, V O =.5 V, V CC = 4.5 V CTR % SWITCHING CHARACTERISTICS (T amb = 25 C unless oherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Propagaion delay ime (high o low) = 16 ma, V CC = 5. V, R L = 1.9 kω PHL μs Propagaion delay ime (low o low) = 16 ma, V CC = 5. V, R L = 1.9 kω PLH μs V CM V CC B A C = 1 nf V CC R L V O 9 % 1 % 5V V O R 1 % 9 % F isfh636_3 Pulse generaor common mode V O V OL isfh636_4 A: =ma A: =16mA Fig. 3 - Common Mode Transien Tes Fig. 4 - Measuremen Waveform of CMR COMMON MODE TRANSIENT IMMUNITY (T amb = 25 C unless oherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Common mode ransien immuniy (high) Common mode ransien immuniy (low) I O = ma, V CM = 15 V P-P, R L = 1.9 kω, V CC = 5. V I O = 16 ma, V CM = 15 V P-P, R L = 1.9 kω, V CC = 5. V CM H V/μs CM L V/μs Rev. 1.8, 3-Aug-15 3 Documen Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Climaic classificaion According o IEC 68 par 1 55/1/21 Polluion degree According o DIN VDE 19 2 Comparaive racking index Insulaion group IIIa CTI 175 Maximum raed wihsanding isolaion volage According o UL1577, = 1 min V ISO 442 V RMS Tesed wihsanding isolaion volage According o UL1577, = 1 s V ISO 53 V RMS Maximum ransien isolaion volage According o DIN EN V IOTM 8 V peak Maximum repeiive peak isolaion volage According o DIN EN V IORM 89 V peak Isolaion resisance T amb = 25 C, V IO = 5 V R IO 1 12 Ω T amb = 1 C, V IO = 5 V R IO 1 11 Ω Oupu safey power P SO 7 mw Inpu safey curren I SI 4 ma Inpu safey emperaure T S 175 C Creepage disance DIP-6 7 mm Clearance disance DIP-6 7 mm Creepage disance DIP-6, opion 6 8 mm Clearance disance DIP-6, opion 6 8 mm Creepage disance SMD-6, opion 7 7 mm Clearance disance SMD-6, opion 7 7 mm Creepage disance SMD-6, opion 9 7 mm Clearance disance SMD-6, opion 9 7 mm Insulaion hickness DTI.4 mm Noe As per IEC , , his opocoupler is suiable for safe elecrical insulaion only wihin he safey raings. Compliance wih he safey raings shall be ensured by means of proecive circuis. TYPICAL CHARACTERISTICS (T amb = 25 C, unless oherwise specified) I 16 ma V CC = 5. V 4 ma 35 ma 3 ma 25 ma 2 ma 15 ma 1 ma 5 ma 4 ma V 16 V ºC 1 Fig. 5 - Oupu Characerisics-Oupu Curren vs. Oupu Volage Fig. 6 - Permissible Forward Curren of Emiing Diode vs. Ambien Temperaure Rev. 1.8, 3-Aug-15 4 Documen Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 P o 12 mw Deecor Emier NCTR = 16 ma, V O =.4 V, V CC = 5. V 6N 135 6N ºC 1 Fig. 7 - Permissible Toal Power Dissipaion vs. Ambien Temperaure Fig. 1 - Curren Transfer Raio (Normalized) vs. Ambien Temperaure /ma I OH V = V CC = 5. V, = VF/V ºC 1 Fig. 8 - Forward Curren of Emiing Diode vs. Forward Volage Fig Oupu Curren (High) vs. Ambien Temperaure I O.5 % V CC = 5. V ºC 1 14 ns 12 P = 16 ma, V CC = 5. V, R L = 4.1 kω, : R L = 1.9 kω PLH PHL PLH 2 6N 135 PHL 6N ºC 1 A T Fig. 9 - Small Signal Transfer Raio vs. Forward Curren Fig Delay Times vs. Ambien Temperaure Rev. 1.8, 3-Aug-15 5 Documen Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 1.2 % 1.1 NCTR = 16 ma, V O =.4 V, V CC = 5. V 6N 135 6N A 1-1 Fig Curren Transfer Raio (Normalized) vs. Forward Curren PACKAGE DIMENSIONS in inches (millimeers) DIP-6 9. max. 8.6 ±.1.9 min yp. 6.5 ± ±.1.5 ± yp ±.1.79 min ±.25 3 o ±.5.25 ± Pin one I.D Rev. 1.8, 3-Aug-15 6 Documen Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 DIP-6, Opion 6.9 min. 9. max. 8.6 ± yp yp. 6.5 ± ±.1.5 ± ± ± yp ±.1.1 min ±.4.25 ± Pin one I.D SMD-6, Opion 7.9 min. 9. max. 8.6 ± max yp. 6.5 ± ±.25.7 min..25 ± ± ± yp..5 min. 8. min. Leads coplanariy.1 max R Pin one I.D. 8. min Rev. 1.8, 3-Aug-15 7 Documen Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 SMD-6, Opion 9.9 min. 9. max. 8.6 ± max yp. 6.5 ± ± yp R ±.25.2 ±.1.25 ±.1.5 min. 8. min. Leads coplanariy.1 max. Pin one I.D. 8. min SOLDER PROFILES Temperaure ( C) C o 26 C firs wave wave ca. 2 K/s 1 C o 13 C 5 s 2 K/s second wave ca. 2 K/s forced cooling Lead emperaure full line: ypical doed line: process limis ca. 5 K/s Temperaure ( C) C 24 C 217 C max. 12 s max. ramp up 3 C/s max. 26 C 245 C max. 3 s max. 1 s max. ramp down 6 C/s Time (s) Fig Wave Soldering Double Wave Profile According o J.STD-2 for DIP Devices Time (s) Fig Lead (Pb)-free Reflow Solder Profile According o J-STD-2 for SMD Devices HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Floor life: unlimied Condiions: T amb < 3 C, RH < 85 % Moisure sensiiviy level 1, according o J-STD-2 Rev. 1.8, 3-Aug-15 8 Documen Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Legal Disclaimer Noice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Inerechnology, Inc., is affiliaes, agens, and employees, and all persons acing on is or heir behalf (collecively, Vishay ), disclaim any and all liabiliy for any errors, inaccuracies or incompleeness conained in any daashee or in any oher disclosure relaing o any produc. Vishay makes no warrany, represenaion or guaranee regarding he suiabiliy of he producs for any paricular purpose or he coninuing producion of any produc. To he maximum exen permied by applicable law, Vishay disclaims (i) any and all liabiliy arising ou of he applicaion or use of any produc, (ii) any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages, and (iii) any and all implied warranies, including warranies of finess for paricular purpose, non-infringemen and merchanabiliy. Saemens regarding he suiabiliy of producs for cerain ypes of applicaions are based on Vishay s knowledge of ypical requiremens ha are ofen placed on Vishay producs in generic applicaions. Such saemens are no binding saemens abou he suiabiliy of producs for a paricular applicaion. I is he cusomer s responsibiliy o validae ha a paricular produc wih he properies described in he produc specificaion is suiable for use in a paricular applicaion. Parameers provided in daashees and / or specificaions may vary in differen applicaions and performance may vary over ime. All operaing parameers, including ypical parameers, mus be validaed for each cusomer applicaion by he cusomer s echnical expers. Produc specificaions do no expand or oherwise modify Vishay s erms and condiions of purchase, including bu no limied o he warrany expressed herein. Excep as expressly indicaed in wriing, Vishay producs are no designed for use in medical, life-saving, or life-susaining applicaions or for any oher applicaion in which he failure of he Vishay produc could resul in personal injury or deah. Cusomers using or selling Vishay producs no expressly indicaed for use in such applicaions do so a heir own risk. Please conac auhorized Vishay personnel o obain wrien erms and condiions regarding producs designed for such applicaions. No license, express or implied, by esoppel or oherwise, o any inellecual propery righs is graned by his documen or by any conduc of Vishay. Produc names and markings noed herein may be rademarks of heir respecive owners. 217 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-17 1 Documen Number: 91

Analog High Speed Coupler, High Noise Immunity, 1 MBd, 15 kv/μs

Analog High Speed Coupler, High Noise Immuniy, MBd, kv/μs DESCRIPTION The is an opocoupler wih a GaAlAs infrared emiing diode, opically coupled o an inegraed phoo deecor consising of a phoo diode and a