ABSOLUTE MAXIMUM RATINGS (TC=25 ) Item Symbol Unit MBL400E33D. DC IC 400 A 1ms ICp. 800 Forward Current. DC IF 400 A 1ms IFM

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1 IGBT MODULE Spec.No.IGBT-SP-68 R4 P1/7 MBL4E33D Silicon N-channel IGBT FEATURES High hermal faigue durabiliy.(dela Tc=7,N>3,cycles) High speed, low loss IGBT module. Low noise due o buil-in free-wheeling diode ulra sof fas recovery diode(usfd). Low driving power due o low inpu capaciance MOS gae. High reliabiliy, high durabiliy module. Isolaed hea sink (erminal o base). CIRCUIT DIAGRAM OUTLINE DRAWING Uni in mm ABSOLUTE MAXIMUM RATINGS (TC=25 ) Iem Symbol Uni MBL4E33D Collecor Emier Volage S V 3,3 Gae Emier Volage S V ±2 Collecor Curren DC 4 A 1ms p 8 Forward Curren DC IF 4 A 1ms IFM 8 Juncion Temperaure Tj -4 ~ +125 Sorage Temperaure Tsg -4 ~ +125 lsolaion Volage VISO VRMS 6,(AC 1 minue) Terminals (M4/M8) - 2/22 (1) Screw Torque N m Mouning (M6) - 6 (2) Noes: (1) Recommended Value 1.8±.2/22±1N m (2) Recommended Value 5.5±.5N m ELECTRAL CHARECTERISTS 1) IGBT + FWD Iem Symbol Uni Min. Typ. Max. Tes Condiions Collecor Emier Cu-Off Curren ES ma =3,3V, =V, Tj=25 Gae Emier Leakage Curren IGES na - - ±5 =±2V, =V, Tj=25 Collecor Emier Sauraion Volage (sa) V =4A, =15V, Tj=125 Gae Emier Threshold Volage (TO) V =1V, =4mA, Tj=25 Inpu Capaciance Cies nf =1V, =V,f=1kHz, Inernal Gae Resisance Rge Ω Tj= Rise Time r VCC=1,65V, =4A Turn On Time on L=15nH Swiching Times µs Fall Time f RG=1Ω (3) Turn Off Time off =±15V, Tj=125 Peak Forward Volage Drop VFM V =4A, =V, Tj=125 VCC=1,65V, IF=4A (4) Reverse Recovery Time rr µs L=15nH, Tj=125 o C IGBT Rh(j-c) Thermal Impedance K/W Juncion o case FWD Rh(j-c) ) DIODE Weigh: 9(g) Iem Symbol Uni Min. Typ. Max. Tes Condiions Collecor Emier Cu-Off Curren IAKS ma VAK=3,3V, Tj=25 IF=4A, Tj=125 A Main erminal Peak Forward Volage Drop VF V (Terminal resisance:.5mω ypical) IF =4A, VCC=1,65V (4) Reverse Recovery Time rr µs L=15nH, Tj=125 o C Thermal Impedance Rh(j-c) K/W.52 Juncion o case Noes: (3) R G value is he es condiion's value for decision of he swiching imes, no recommended value. Please, deermine he suiable RG value afer he measuremen of swiching waveforms(overshoo volage,ec.)wih appliance mouned. (4)Couner arm IGBT =-15V

2 IGBT MODULE Spec.No.IGBT-SP-68 R4 P2/7 MBL4E33D DEFINITION OF TEST CIRCUIT Ls LLOAD Vcc Rg G/D Fig.1 Swiching es circui VL Ic VL Ls= dic ( d ) =L L Fig.2 Definiion of Ls 9% Ic 1% 1% 1% Vge Vge 1% r 9% on Eon(1%)= Ic d 3 Ic 7 f off 9% 8 8 1% 6 Eoff(1%)= Ic d 7 -Ic IF.1 Irm rr Irm.1IF 12 1 Err(1%)= IF d 11 Eon(Full)= Ic d Eoff(Full)= Ic d 5 Err(Full)= IF d 1 9 Fig.3 Definiion of swiching loss

3 IGBT MODULE Spec.No.IGBT-SP-68 R4 P3/7 MBL4E33D CHARACTERISTS CURVE STAT CHARACTERISTS 8 Tc=25 =15V 13V 11V 8 =15V 13V 11V 6 6 Collecor Curren (A) 4 9V Collecor Curren (A) 4 9V 2 2 7V Collecor-Emier Volage (V) Collecor Curren vs.collecor o Emier Volage 8 Tc=25 5V 7V 5V Collecor-Emier Volage (V) Collecor Curren vs.collecor o Emier Volage 8 Tc= Forward Curren IF (A) 4 Forward Curren IF (A) Forward Volage VF (V) Forward Volage of free-wheeling diode Forward Volage (a Main Terminal) VF (V) Main Terminal Resisance:.5mΩ Typical. Forward Volage of chopper diode

4 IGBT MODULE Spec.No.IGBT-SP-68 R4 P4/7 MBL4E33D DEPENDENCE OF CURRENT 1 Condiions Vcc=165V L=15nH RG=1Ω Eon(Full).5.4 Condiions Vcc=165V L=15nH RG=1Ω Eoff(Full) Eoff(1%) Turn-on Loss Eon (J/pulse).5 Eon(1%) Turn-off Loss Eoff (J/pulse).3.2 1% 1%.1 1% 1% Eon(1%)= d 3 2 Eon(full)= d Collecor Curren Ic (A) Turn-on Loss vs. Collecor Curren 8 Eoff(1%)= d 7 6 Eoff(full)= d Collecor Curren Ic (A) Turn-off Loss vs. Collecor Curren.8 Condiions Vcc=165V L=15nH RG=1Ω 4. Condiions Vcc=165V L=15nH RG=1Ω Reverse Recovery Loss Err (J/pulse) IRM Err(full) Err(1%).1IF Swiching Time on,r,off,f,rr ( µs ) off on r f IF rr 12 Err(1%)= d 11 1 Err(full)= d Collecor Curren Ic (A) Recovery Loss vs. Collecor Curren. 2 4 Collecor Curren (A) Swiching Time vs. Collecor Curren

5 IGBT MODULE Spec.No.IGBT-SP-68 R4 P5/7 MBL4E33D DEPENDENCE OF RG 1.5 Condiions Vcc=165V =4A L=15nH 1. Condiions Vcc=165V =4A L=15nH Turn-on Loss Eon (J/pulse) 1.5 Eon(1%) Eon(Full) Turn-off Loss Eoff (J/pulse).5 Eoff(1%) Eoff(Full) 1% 1% 1% 1% Reverse Recovery Loss Err (J/pulse) Eon(1%)= d 3 2 Eon(full)= 1 d Gae Resisance RG (Ω) Turn-on Loss vs. Gae Resisance Condiions Vcc=165V =4A L=15nH Err(1%).1 12 Err(1%)= d 11 1 Err(full)= d Gae Resisance RG (Ω) Recovery Loss vs. Gae Resisance IF IRM 9 11 Err(Full) IF Swiching Time on,r,off,f,rr ( µs ) Eoff(1%)= d 7 6 Eoff(full)= d Gae Resisance RG (Ω) Turn-off Loss vs. Gae Resisance Condiions Vcc=165V =4A L=15nH 1 2 Gae Resisance RG (Ω) Swiching Time vs. Gae Resisance off on r f rr

6 IGBT MODULE Spec.No.IGBT-SP-68 R4 P6/7 MBL4E33D Thermal Impedance TRANSIENT THERMAL IMPEDANCE.1 Maximum Transien hermal impedance : Zh(j-c) (K/W).1.1 FWD IGBT Time : (s) Transien Thermal Impedance Curve Negaive environmenal impac maerial Please noe he following negaive environmenal impac maerials are conained in he produc in order o keep produc characerisic and reliabiliy level. Maerial Lead (Pb) and is compounds Arsenic and is compounds Conained par Solder Si chip

7 HITACHI POWER SEMONDUCTORS Noices 1. The informaion given herein, including he specificaions and dimensions, is subjec o change wihou prior noice o improve produc characerisics. Before ordering, purchasers are advised o conac Hiachi sales deparmen for he laes version of his daa shees. 2. Please be sure o read "Precauions for Safe Use and Noices" in he individual brochure before use. 3. In cases where exremely high reliabiliy is required (such as use in nuclear power conrol, aerospace and aviaion, raffic equipmen, life-suppor-relaed medical equipmen, fuel conrol equipmen and various kinds of safey equipmen), safey should be ensured by using semiconducor devices ha feaure assured safey or by means of users fail-safe precauions or oher arrangemen. Or consul Hiachi s sales deparmen saff. 4. In no even shall Hiachi be liable for any damages ha may resul from an acciden or any oher cause during operaion of he user s unis according o his daa shees. Hiachi assumes no responsibiliy for any inellecual propery claims or any oher problems ha may resul from applicaions of informaion, producs or circuis described in his daa shees. 5. In no even shall Hiachi be liable for any failure in a semiconducor device or any secondary damage resuling from use a a value exceeding he absolue maximum raing. 6. No license is graned by his daa shees under any paens or oher righs of any hird pary or Hiachi, Ld. 7. This daa shees may no be reproduced or duplicaed, in any form, in whole or in par, wihou he expressed wrien permission of Hiachi, Ld. 8. The producs (echnologies) described in his daa shees are no o be provided o any pary whose purpose in heir applicaion will hinder mainenance of inernaional peace and safey no are hey o be applied o ha purpose by heir direc purchasers or any hird pary. When exporing hese producs (echnologies), he necessary procedures are o be aken in accordance wih relaed laws and regulaions. For inquiries relaing o he producs, please conac neares overseas represenaives which is locaed Inquiry porion on he op page of a home page. Hiachi power semiconducor home page address hp://

MBL1000E33E2-B Silicon N-channel IGBT 3300V E2 version

MBL1000E33E2-B Silicon N-channel IGBT 3300V E2 version MBL1E33E2-B Silicon N-channel IGBT 33V E2 version Spec.No.IGBT-SP-113 R1 P1 FEATURES Sof swiching behavior & low conducion loss: Sof low-injecion punch-hrough High conduciviy IGBT. Low driving power due