Features / Advantages: Applications: Package: SMPD

Transcription

1 X0PLB XP GB x CES C CE(sa). SOPLUS Surface Moun Power Device Phase leg SCR / GB Par number X0PLB Backside: isolaed E Feaures / dvanages: pplicaions: Package: SMPD XP GB - low sauraion volage - posiive emperaure coefficien for easy paralleling - fas swiching - shor ail curren for opimized performance in resonan circuis Sonic diode - fas reverse recovery - low operaing forward volage - low leakage curren - low emperaure dependency of reverse recovery hyrisor Phaseleg - buck-boos chopper Full bridge - power supplies - inducion heaing - four quadran DC drives - conrolled recifier hree phase bridge - C drives - conrolled recifier solaion olage: 000~ ndusry convenien ouline RoHS complian Epoxy mees UL 4-0 Soldering pins for PCB mouning Backside: DCB ceramic Reduced weigh dvanced power cycling

2 GB Symbol CES GES GEM C C 0 collecor curren Condiions C C 0 C X0PLB Raings min. yp. max. P o oal power dissipaion C C 00 CE(sa) collecor emier sauraion volage C ; GE J C.. J C GE(h) gae emier hreshold volage C 0.6 m; GE CE J C CES collecor emier leakage curren CE CES; GE 0 J C 0. m C 0. m GES RBSO Definiion collecor emier volage max. DC gae volage max. ransien gae emier volage gae emier leakage curren ±0 GE J QG(on) oal gae charge CE 600 ; GE ; C 4 nc r f E E d(on) d(off) on off CM SCSO SC urn-on delay ime 0 ns curren rise ime 40 ns inducive load J C urn-off delay ime 0 ns CE 600 ; C curren fall ime 00 ns GE ± ; R G 6 Ω urn-on energy per pulse. mj urn-off energy per pulse. mj reverse bias safe operaing area GE ± ; R G 6 Ω J C 4 CEmax shor circui safe operaing area shor circui duraion CEmax 00 ; ± CE GE C C SC shor circui curren R G 6 Ω; non-repeiive 60 R hjc hermal resisance juncion o case. K/ hermal resisance case o heasink 0.40 K/ J J ±0 bd Uni n µs Diode RRM F max. repeiive reverse volage J forward curren F 0 C 0 C F forward volage 0 F C J C J R reverse curren R RRM J C 0.0 m J C 0. m Qrr reverse recovery charge µc R 600 RM max. reverse recovery curren 0 -di F /d 400 /µs J C rr reverse recovery ime 0 ns F 0 ; GE 0 E rec reverse recovery energy 0. mj R hjc hermal resisance juncion o case. K/ hermal resisance case o heasink 0. K/.0.4

3 hyrisor Symbol Definiion J C X0PLB Raings min. yp. max. 00 forward volage drop.4 (RMS) Condiions 0 0 C 0 C 0 sine J J 0 hreshold volage J 0 C 0. for power loss calculaion only r slope resisance. mω R hermal resisance juncion o case. K/ hjc P o oal power dissipaion C C 4 SM max. forward surge curren 0 ms; (0 Hz), sine J 4 C 00, ms; (60 Hz), sine R 0 0 ms; (0 Hz), sine J 0 C 0, ms; (60 Hz), sine R 0 ² value for fusing 0 ms; (0 Hz), sine J 4 C 00 ²s, ms; (60 Hz), sine R 0 0 ²s 0 ms; (0 Hz), sine J 0 C 4 ²s, ms; (60 Hz), sine 0 40 ²s P GM RSM/DSM RRM/DRM P G average forward curren RMS forward curren J J C C J juncion capaciance 0 f MHz 0 max. gae power dissipaion P 0 µs C 0 C 0 00 µs average gae power dissipaion P J J 0 C R Uni R J pf (di/d) cr criical rae of rise of curren J C; f 0 Hz repeiive, 0 P 00 µs; di G /d 0./µs; G 0.; D ⅔ DRM non-repe., 0 (dv/d) criical rae of rise of volage ⅔ C cr max. non-repeiive reverse/forward blocking volage max. repeiive reverse/forward blocking volage reverse curren, drain curren R hermal resisance case o heasink 0. D GK ; mehod (linear volage rise) G gae rigger volage D 6 J C J -40 C DRM J µ m /µs /µs /µs.. G gae rigger curren D 6 J C m J -40 C 0 m GD gae non-rigger volage D ⅔ DRM J C 0. GD gae non-rigger curren 4 m L laching curren p 0µs J C m G 0.; di G /d 0./µs H holding curren D 6 R GK J C 0 m gd gae conrolled delay ime D ½ DRM J C µs G 0.; di G /d 0./µs q urn-off ime R 00 ; 0; D ⅔ DRM J 0 C 40 µs di/d 0 /µs; dv/d 0/µs; p 00 µs K/

4 X0PLB Package SMPD Raings Symbol Definiion Condiions min. yp. max. Uni RMS RMS curren per erminal 00 sg sorage emperaure - 0 C J virual juncion emperaure - 0 C eigh F C d Spp/pp d Spb/pb SOL mouning force wih clip 40 creepage disance on surface sriking disance hrough air erminal o erminal.6 erminal o backside 4.0 isolaion volage second minue 0/60 Hz, RMS; SOL m g N mm mm Backside DCB Par number Dae code ssembly line Daa Marix Code Digis o : Par # 0 o : Dae Code 4 o : ssembly line 6 o : Lo # : Spli Lo o 6: ndividual # UL Logo ~ ~ ~ XXXXXXXXXX yyww Pin idenifier Par number X 0 P LB GB XP GB Gen / sd Curren Raing [] Phase leg SCR / GB Reverse olage [] SMPD-B Ordering Sandard Par Number Marking on Produc Delivery Mode Quaniy Code No. X0PLB X0PLB Bliser 4 ape & Reel 00 Equivalen Circuis for Simulaion * on die level J 0 C hyrisor GB Diode 0 R 0 0 max hreshold volage 0. R 0 max slope resisance * mω

5 X0PLB Oulines SMPD (:) ) (6x) `0,0, `0, 0 + 0, c 0, ) `0, 0, `0, `0, seaing plane `0, ) (x) `0,0 4 `0,0 0, `0, `0,, `0, `0, 4, `0, 6 4 ) c 0,0, `0,, `0,, `0, 6, `0, `0, Pin number Noes: ) porusion may add 0. mm max. on each side ) addiional max. 0.0 mm per side by punching misalignemen or overlap of dam bar or bending compression ) DCB area 0 o 0 µm convex; posiion of DCB area in relaion o plasic rim: ± µm (measured mm from Cu rim) 4) erminal plaing: 0. - µm Ni µm Sn (gal v.) cuing edges may be parially free of plaing 6 4