p h a s e - o u t Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM X2

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Madeline Annabella Snow
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1 GWM 18-4X2 Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 4 V 25 = 18 R DSon yp. = 1.9 mw Preliminary daa G1 G3 G5 L+ S1 G2 S3 G4 S5 G6 L1 L2 L3 Sraigh leads Surface Moun Device S2 S4 S6 L- MOSFETs Symbol Condiio Maximum Raings S = 25 C o 15 C 4 V ± 2 V I F25 I F9 I F11 T C = 25 C T C = 9 C T C = 11 C T C = 25 C (diode) T C = 9 C (diode) T C = 11 C (diode) Symbol Condiio Characerisic Values ( = 25 C, unless oherwise specified) min. yp. max. R DSon on chip level a = 25 C mw = 1 V ; = mw (h) = 2 V; = 1 m V SS = S ; = V = 25 C 5 µ 5 µ I GSS = ± 2 V; = V.2 µ Q g Q gs Q gd d(on) r d(off) f E recoff = 1 V; = 2 V; = 1 inducive load = +1/ V; = 24 V = 135 ; = 39 Ω; R hjc R hjh wih hea rafer pase (IXYS es seup) 1.3 = ( + R Pin o Chip ) nc nc nc mj mj mj K/W K/W pplicaio C drives in auomobiles - elecric power seering - sarer generaor in indusrial vehicles - propulsion drives - fork lif drives in baery supplied equipmen Feaures MOSFETs in rench echnology: - low R DSon - opimized inriic reverse diode package: - high level of inegraion - high curren capabiliy 3 max. - aux. erminals for MOSFET conrol - erminals for soldering or welding connecio - isolaed DCB ceramic base plae wih opimized hea rafer Space and weigh savings Package opio 2 lead forms available - sraigh leads (SL) - SMD lead version (SMD) Recommended replacemen for he SMD ype: MTI15W4GC 21137c 211 IXYS ll righs reserved 1-6

2 GWM 18-4X2 Source-Drain Diode Symbol Condiio Characerisic Values ( = 25 C, unless oherwise specified) min. yp. max. V SD (diode) I F = 1 ; = V V rr 38 I Q F = 1 ; -di F /d = 6 /µs RM.31 µc V I R ; RM 14 Componen Symbol Condiio Maximum Raings I RMS per pin in main curren pahs (P+, N-, L1, L2, L3) may be addiionally limied by exernal connecio 3 T sg V ISOL I ISOL < 1 m, 5/6 Hz, f = 1 minue 1 V~ F C mouning force wih clip 5-25 N Symbol Condiio Characerisic Values min. yp. max. R pin o chip L+ o L1/L2/L3 or L- o L1/L2/L3 1. mw C P coupling capaciy beween shored 16 pf pi and mouning ab in he case Weigh 25 g = ( + R Pin o Chip ) C C 21137c 211 IXYS ll righs reserved 2-6

3 GWM 18-4X2 Sraigh Leads GWM 18-4X2-SL 1,5 37,5 +,2 (11x) 3 ±,5 1 ±,5 5 ±,5 1 ±,5,5 ±,2 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 25 +,2 53 ±,15 L3 L2 L1 L- L+ 4,5 2,1 12 ±,5 4 ±,5 (3x) 6 ±,5 Surface Moun Device GWM 18-4X2-SMD 37,5 +,2 L3p h 1,5 (11x) 3 ±,5 1 ±,5 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 39 ±,15 5 ±,5,5 ±,2 R1 ±,2 a s e - o u 25 +,2 L2 L1 L- L+ 4,5 2,1 12 ±,5 1 ±,5 5 ±,1 4 ±,5 (3x) 6 ±,5 5 ±2 Leads Ordering Par Name & Packing Uni Marking Par Marking Delivering Mode Base Qy. Ordering Code Sraigh Sandard GWM 18-4X2 - SL GWM 18-4X2 Bliser SMD Sandard GWM 18-4X2 - SMD GWM 18-4X2 Bliser c 211 IXYS ll righs reserved 3-6

4 GWM 18-4X SS =.25 m = 16 V S 1. normalized norm [ C] Fig. 1 Drain source breakdown volage S versus juncion emperaure = 2 V 15 V 1 V normalized = 25 C Fig. 3 Typical oupu characerisic = 1 V = V [ C] Fig. 5 Typ. drain source on-sae resisance versus juncion emperaure 7 V 6 V 5.5 V 5 V mω 1 5 = 25 C c 211 IXYS ll righs reserved norm = 2 V 15 V 1 V Fig. 2 Typical rafer characerisic 5 V 5.5 V 6 V 6.5 V Fig. 4 Typical oupu characerisic 7 V = 1 V 15 V 2 V 7 V 6.5 V 6 V 5.5 V 5 V Fig. 6 Typ. drain source on-sae resisance versus

5 GWM 18-4X2, E rec(off) , E.6 rec(on) Q G [nc] 1x E. rec(off) = 135 = 25 C = +1/ V = 135 = 28 V Fig. 7 Gae charge characerisics = +1/ V = 39 Ω r d(on) Fig. 9 Typ. urn-on energy & swiching imes vs. collecor curren, inducive swiching r d(on) [] 2 [] I 12 D T C [ C] Fig. 8 Drain curren vs. emperaure T C = +1/ V = 39 Ω d(off) f d(off) f [] 2 1 Fig. 1 Typ. urn-off energy & swiching imes vs. collecor curren, inducive swiching = +1/ V = [] Erec(on) x [Ω] Fig. 11 Typ. urn-on energy & swiching imes vs. gae resisor, inducive swiching [Ω] Fig. 12 Typ. urn-off energy & swiching imes vs. gae resisor, inducive swiching 21137c 211 IXYS ll righs reserved 5-6

6 GWM 18-4X V R 2 16 I F = rr [] I RM di F /d [/µs] di F /d [/µs] Q rr [µc] Fig. 13 Reverse recovery ime rr of he body diodes vs. di/d I F = di F /d [/µs] Fig. 15 Reverse recovery charge Q rr of he body diodes versus di/d I S = -25 C 25 C 125 C 15 C Fig. 14 Reverse recovery curren I RM of he body diodes versus di /d V SD Fig. 16 Source curren I S versus source drain volage V SD (body diode).5 Z h [K/W] Fig. 17 Definiion of swiching imes [s] 21137c 211 IXYS ll righs reserved 6-6

p h a s e - o u t Dual Power MOSFET Module VMM X2 V DSS = 75 V I D25 = 1560 A R DS(on) = 0.38 mω Phaseleg Configuration

p h a s e - o u t Dual Power MOSFET Module VMM X2 V DSS = 75 V I D25 = 1560 A R DS(on) = 0.38 mω Phaseleg Configuration MM 5-75X Dual Power MOSFET Module S = 75 5 = 5 =. mω Phaseleg Configuraion Gae Conrol Pi 9 Power Screw Terminals 9 MOSFET T + T Symbol Condiio Maximum Raings S = 5 C o 5 C 75 ± 5 T C = 5 C j 5 T C = C