Smart Highside Power Switch

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1 Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion ) Undervolage and overvolage shudown wih auo-resar and hyseresis Open drain diagnosic oupu Open load deecion in ON-sae CMOS compaible inpu oss of ground and loss of bb proecion Elecrosaic discharge (ESD) proecion PROFET BTS426 Produc Summary Overvolage proecion bb(az) 43 Operaing volage bb(on) On-sae resisance RON 60 mω oad curren (SO) (SO) 7.0 A Curren limiaion (SCr) 6 A Sandard TO-220AB/ Sraigh leads SMD Applicaion µc compaible power swich wih diagnosic feedback for 2 and 24 DC grounded loads All ypes of resisive, inducive and capacive loads Replaces elecromechanical relays, fuses and discree circuis General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, monolihically inegraed in Smar SPMOS echnology. Providing embedded proecive funcions. olage source Overvolage proecion Curren limi Gae proecion + bb 3 ogic 2 ESD olage sensor ogic Charge pump evel shifer Recifier imi for unclamped ind. loads Open load Shor o bb deecion Temperaure sensor oad 4 R O Signal PROFET oad ) Wih exernal curren limi (e.g. resisor R =0 Ω) in connecion, resisor in series wih connecion, reverse load curren limied by conneced load. Semiconducor Group of Oc-0

2 Pin Symbol Funcion - ogic ground 2 npu, acivaes he power swich in case of logical high signal 3 bb + Posiive power supply volage, he ab is shored o his pin 4 S Diagnosic feedback, low on failure (oad, ) O Oupu o he load BTS426 Maximum Raings a Tj = 2 C unless oherwise specified Parameer Symbol alues Uni Supply volage (overvolage proecion see page 3) bb 43 Supply volage for full shor circui proecion bb 34 T j Sar = C oad dump proecion 2) oaddump = U A + s, U A = 3. 4) oad dump 60 R 3) = 2 Ω, R =.7 Ω, d = 200 ms, = low or high oad curren (Shor circui curren, see page 4) self-limied A Operaing emperaure range T j C Sorage emperaure range T sg Power dissipaion (DC), T C 2 C P o 7 W nducive load swich-off energy dissipaion, single pulse bb = 2, T j,sar = 0 C, T C = 0 C cons. = 7.0 A, Z = 24 m, 0 Ω: E AS 0.74 J Elecrosaic discharge capabiliy (ESD) : ESD.0 k (uman Body Model) all oher pins: 2.0 acc. M-D883D, mehod 30.7 and ESD assn. sd. S.-993 npu volage (DC) Curren hrough inpu pin (DC) ±2.0 ma Curren hrough saus pin (DC) ±.0 see inernal circui diagrams page 6 Thermal Characerisics Parameer and Condiions Symbol alues Uni min yp max Thermal resisance chip - case: R hjc.67 K/W juncion - ambien (free air): R hja 7 SMD version, device on PCB ) : 34 2) Supply volages higher han bb(az) require an exernal curren limi for he and saus pins, e.g. wih a 0 Ω resisor in he connecion and a kω resisor in series wih he saus pin. A resisor for he proecion of he inpu is inegraed. 3) R = inernal resisance of he load dump es pulse generaor 4) oad dump is seup wihou he DUT conneced o he generaor per SO and D ) Device on 0mm*0mm*.mm epoxy PCB FR4 wih 6cm 2 (one layer, 70µm hick) copper area for bb connecion. PCB is verical wihou blown air. Semiconducor Group Oc-0

3 Elecrical Characerisics BTS426 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 2 unless oherwise specified min yp max oad Swiching Capabiliies and Characerisics On-sae resisance (pin 3 o ) = 2 A T j =2 C: T j =0 C: Nominal load curren, SO Norm (pin 3 o ) ON = 0., T C = 8 C Oupu curren (pin ) while disconneced or pulled up, bb=30, = 0, see diagram page 7 Turn-on ime o 90% : Turn-off ime o 0% : R = 2 Ω, Tj = C Slew rae on 0 o 30%, R = 2 Ω, Tj = C Slew rae off 70 o 40%, R = 2 Ω, Tj = C R ON mω (SO) A (high) 0 ma on off µs d /d on 0. /µs -d/d off 0. /µs Operaing Parameers Operaing volage 6) Tj = C: bb(on).0 34 Undervolage shudown Tj = C: bb(under) 3..0 Undervolage resar Tj = C: bb(u rs).0 Tj =+0 C: 7.0 Undervolage resar of charge pump bb(ucp) see diagram page 2 Tj = C: Undervolage hyseresis bb(under) = bb(u rs) - bb(under) bb(under) 0.2 Overvolage shudown Tj = C: bb(over) Overvolage resar Tj = C: bb(o rs) 33 Overvolage hyseresis Tj = C: bb(over) 0. Overvolage proecion 7) Tj = C: bb(az) bb =40 ma Sandby curren (pin 3) =0 T j = C: T j = 0 C: bb(off) eakage oupu curren (included in bb(off) ) (off) 2 µa =0 Operaing curren (Pin ) 8), =, Tj = C.8 3. ma µa 6) A supply volage increase up o bb =.6 yp wihou charge pump, bb - 2 7) See also ON(C) in able of proecion funcions and circui diagram page 7. 8) Add, if > 0, add, if >. Semiconducor Group Oc-0

4 BTS426 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 2 unless oherwise specified min yp max Proecion Funcions 9) niial peak shor circui curren limi (pin 3 o ) Tj =-40 C: Tj =2 C: Tj =+0 C: (SCp) Repeiive shor circui shudown curren limi (SCr) T j = T j (see iming diagrams, page 0) 6 A Oupu clamp (inducive load swich off) a = bb - ON(C) = 40 ma: ON(C) Thermal overload rip emperaure T j 0 C Thermal hyseresis T j 0 K Reverse baery (pin 3 o ) 0) - bb 32 Reverse baery volage drop (ou > bb) = -4 A T j =0 C: - ON(rev) 60 m A Diagnosic Characerisics Open load deecion curren (on-condiion) T j =-40 C: T j =2..0 C: (O) 20 0 Open load deecion volage ) (off-condiion) T j = C: (O) nernal oupu pull down (pin o ), =, T j = C R O kω ma 9) negraed proecion funcions are designed o preven C desrucion under faul condiions described in he daa shee. Faul condiions are considered as "ouside" normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 0) Requires 0 Ω resisor in connecion. The reverse load curren hrough he inrinsic drain-source diode has o be limied by he conneced load. Noe ha he power dissipaion is higher compared o normal operaing condiions due o he volage drop across he inrinsic drain-source diode. The emperaure proecion is no acive during reverse curren operaion! npu and Saus currens have o be limied (see max. raings page 2 and circui page 7). ) Exernal pull up resisor required for open load deecion in off sae. Semiconducor Group Oc-0

5 BTS426 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 2 unless oherwise specified min yp max npu and Saus Feedback 2) npu resisance R kω T j = C, see circui page 6 npu urn-on hreshold volage T j = C: (T+).7 3. npu urn-off hreshold volage T j = C: (T-). npu hreshold hyseresis (T) 0. Off sae inpu curren (pin 2), = 0.4, (off) 0 µa T j = C On sae inpu curren (pin 2), = 3., T j = C (on) µa Delay ime for saus wih open load afer swich off d( O4) µs (see iming diagrams, page ), T j = C Saus invalid afer posiive inpu slope d() µs (open load) Tj= C: Saus oupu (open drain) Zener limi volage low volage Tj = C, = +.6 ma: Tj = C, = +.6 ma: Tj = +0 C, = +.6 ma: (high) (low) ) f a ground resisor R is used, add he volage drop across his resisor. Semiconducor Group 2003-Oc-0

6 BTS426 Truh Table Normal operaion Open load Shor circui o bb Overemperaure Undervolage Overvolage npu- Oupu Saus level level ) ( 4) ) ) ( 6) ) = "ow" evel X = don' care Z = high impedance, poenial depends on exernal circui = "igh" evel Saus signal afer he ime delay shown in he diagrams (see fig. page...2) Terms npu circui (ESD proecion) bb 2 4 bb 3 bb PROFET R ON R ESD-ZD ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o ). 3) Power Transisor off, high impedance 4) wih exernal resisor beween pin 3 and pin ) An exernal shor of oupu o bb, in he off sae, causes an inernal curren from oupu o ground. f R is used, an offse volage a he and pins will occur and he low signal may be errorious. 6) ow resisance o bb may be deeced in ON-sae by he no-load-deecion Semiconducor Group Oc-0

7 Saus oupu + Open-load deecion ON-sae diagnosic condiion: ON < R ON * (O) ; high BTS426 R (ON) + bb ESD- ZD ON ON ESD-Zener diode: 6. yp., max ma; R (ON) < 380 Ω a.6 ma, ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o ). ogic uni Open load deecion nducive and overvolage oupu clamp + bb OFF-sae diagnosic condiion: > 3 yp.; low Z ON R EXT OFF PROFET ON clamped o 47 yp. ogic uni Open load deecion R O Overvol. and reverse ba. proecion R R R Z ogic R Z2 PROFET Signal + bb Z = 6.2 yp., Z2 = 47 yp., R = 0 Ω, R = kω, R = 3. kω yp. disconnec 2 Signal 3 bb PROFET 4 bb Any kind of load. n case of npu=high is - (T+). Due o >0, no = low signal available. Semiconducor Group Oc-0

8 disconnec wih pull up 3 nducive oad swich-off energy dissipaion E bb E AS BTS426 bb 2 4 bb PROFET = bb PROFET Z { R E oad E E R Any kind of load. f > - (T+) device says off Due o >0, no = low signal available. bb disconnec wih energized inducive load bb high bb PROFET Normal load curren can be handled by he PROFET iself. bb disconnec wih charged exernal inducive load Energy sored in load inducance: E = /2 2 While demagneizing load inducance, he energy dissipaed in PROFET is E AS = E bb + E - E R = ON(C) i () d, wih an approximae soluion for R > 0 Ω: E AS = 2 R bb + (C) ) ln R (+ ( (C) ) Maximum allowable load inducance for a single swich off = f ( ); T j,sar = 0 C,T C = 0 C cons., bb = 2, R = 0 Ω [m] 0000 S 3 high 2 bb PROFET D 00 bb f oher exernal inducive loads are conneced o he PROFET, addiional elemens like D are necessary [A] Semiconducor Group Oc-0

9 BTS426 Typ. ransien hermal impedance chip case Z hjc = f( p )Z hjc [K/W] 0 0. D= E- E-4 E-3 E-2 E- E0 E p [s] Transien hermal impedance chip ambien air Z hja = f( p )Z hja [K/W] 00 0 D= E- E-4 E-3 E-2 E- E0 E E2 E3 p [s] Semiconducor Group Oc-0

10 Timing diagrams BTS426 Figure a: bb urn on: Figure 2b: Swiching an inducive load bb d() *) open drain proper urn on under all condiions (O) *) if he ime consan of load is oo large, open-load-saus may occur Figure 2a: Swiching a lamp, Figure 3a: Shor circui shu down by overemperaure, rese by cooling (SCp) (SCr) eaing up may require several milliseconds, depending on exernal condiions Semiconducor Group Oc-0

11 Figure 4a: Overemperaure: Rese if T j <T j BTS426 Figure b: Open load: deecion in ON-sae, open load occurs in on-sae d( O) d( O2) T J normal open normal d( O) = 20 µs yp., d( O2) = 0 µs yp Figure a: Open load: deecion in ON-sae, urn on/off o open load Figure c: Open load: deecion in ON- and OFF-sae (wih REXT), urn on/off o open load d() d( O4) d() open open The saus delay ime d( O4) allows o diinguish beween he failure modes "open load" and "overemperaure". Semiconducor Group 2003-Oc-0

12 Figure 6a: Undervolage: Figure 7a: Overvolage: BTS426 bb bb ON(C) bb(over) bb(o rs) bb(under) bb(u cp) bb(u rs) open drain Figure 6b: Undervolage resar of charge pump on ON(C) off-sae on-sae bb(over) off-sae bb(u rs) bb(o rs) bb(u cp) bb(under) bb charge pump sars a bb(ucp) =.6 yp. Semiconducor Group Oc-0

13 Package and Ordering Code All dimensions in mm Sandard TO-220AB/ BTS426 Ordering code Q67060-S608-A2 SMD TO-220AB/, Op. E3062 Ordering code BTS426 BTS426 E3062A T&R: Q67060-S608-A4 TO-220AB/, Opion E3043 BTS426 E3043 Ordering code Q67060-S608-A3 Changed since Dae Change Dec 996 d( O4) max reduced from 00 o 800µs, ypical from 400 o 320µs, min limi unchanged E AS maximum raing and diagram added Zh specificaion added Typ. reverse baery volage drop - ON(rev) added Semiconducor Group Oc-0

14 Published by nfineon Technologies AG, S.-Marin-Srasse 3, D-8669 München nfineon Technologies AG 200 All Righs Reserved. BTS426 Aenion please! The informaion herein is given o describe cerain componens and shall no be considered as a guaranee of characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of non-infringemen, regarding circuis, descripions and chars saed herein. nfineon Technologies is an approved CECC manufacurer. nformaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares nfineon Technologies Office in Germany or our nfineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares nfineon Technologies Office. nfineon Technologies Componens may only be used in life-suppor devices or sysems wih he express wrien approval of nfineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. ife suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. f hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. Semiconducor Group Oc-0

Smart High-Side Power Switch

Smart High-Side Power Switch PROFET BTS26 Smar igh-side Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse