Type Ordering Code Package TLE 6255 G Q67006-A9352 P-DSO-14-9 (SMD)

Size: px
Start display at page:

Download "Type Ordering Code Package TLE 6255 G Q67006-A9352 P-DSO-14-9 (SMD)"

Transcription

1 Single Wire CAN-Transceiver TLE 6255 G Final Daa Shee 1 Feaures Single wire ransceiver for up o 33 kbi/s bus speed Excellen EMC performance High speed mode for up o 100 kbi/s bus speed Ambien operaion range 40 C o 125 C Supply volage operaion range 5.5 V o 28 V Typ. 30 µa oal curren consumpion in sleep mode 4 kv ESD proecion Shor circui and overemperaure proeced Inpu bilevel feaure for wake-up deecion Oupu bilevel feaure for wake up call Loss of Ground proecion Bus dominan imeou feaure Programmable slewrae P-DSO-14-8; -9 Type Ordering Code Package TLE 6255 G Q67006-A9352 P-DSO-14-9 (SMD) 2 Descripion The TLE 6255 G is a special feaured low speed ransceiver for use in single wire applicaions. The device is primarily designed for use in single wire CAN sysems operaing wih various CSMA/CR (carrier sense muliple access/collision resoluion) proocols such as he BOSCH Conroller Area Nework (CAN). The normal communicaion birae in CAN-sysems is up o 33 kbi/s. For sofware or diagnosic daa download a high speed mode is offered ha allows ransmission raes up o 100 kbi/s. Wih many inegraed feaures such as slewrae conrolled oupu, loss of ground circui, bi-level wake-up and sleep mode for low power consumpion he TLE 6255 G is opimized for use in auomoive applicaions. The device is based on Siemens power echnology SPT which allows bipolar and CMOS conrol circuiry o be inegraed wih DMOS power devices on he same monolihic circuiry. Addiional feaures like shor circui and overemperaure proecion, over- and undervolage lockou are inegraed. To enhance he reliabiliy and robusness of he TLE 6255 G he enhanced power SO-14 package is used in order o provide high hermal capaciy and low hermal resisance. Daa Shee Rev

2 3 Pin Configuraion (op view) GND 1 14 GND TxD 2 Leadframe 13 N.C. M CANH M1 4 Chip 11 LOAD RxD 5 10 V ba V CC 6 9 RSL GND 7 8 GND AEP02568 Figure 1 Pin Configuraion RxD = H indicaes a bus recessive sae, RxD = L a bus normal or high volage dominan sae. Daa Shee Rev

3 4 Pin Definiions and Funcions Pin No. Symbol Funcion 1, 7, 8, 14 GND Ground; inernally conneced o leadframe 2 TxD Transceive-Inpu; low acive, logic command o ransmi on he single wire CAN bus; invering: TxD = low causes CANH = dominan (high level); inernal 10 kω pull up 3 M0 Mode-Inpu 0; o program he device operaing mode; inernal pull down 4 M1 Mode-Inpu 1; o program he device operaing mode; inernal pull down 5 RxD Receive-Oupu; open drain, logic daa as sensed on he single wire CAN bus; invering (RxD = L when CANH is dominan) 6 V CC Supply Volage; inpu for 5 V logic supply volage 9 RSL Slewrae-Program-Inpu; an exernal resisor o V CC on his pin is required o program he bus oupu slewrae 10 V ba Baery Supply Volage; exernal blocking capacior necessary (see applicaion circui) 11 LOAD Uni-Load Resisor Inpu; inernal erminaion o GND 12 CANH CAN Bus Inpu/Oupu; single wire bus inpu and oupu; shor circui proeced 13 N.C. no conneced Daa Shee Rev

4 5 Block Diagram V Ba V CC CANH 12 LOAD 11 4 kv ESD 4 kv ESD 10 Proecion and Sarup- Conrol Driver Feedback- Loop Load Driver 6 Biasing OVLO UVLO Wave- Shape- Circui Inpu Filer Loss of Ground Conrol Time Ou Circui Mode-Logic Volage Curren Converer M1 M0 Mode L L Sleep L H High-Speed H L Wake-up Call H H Normal Receive Comp TLE 6255G BUF 9 2 RSL TxD 3 M0 4 M1 5 RxD 1, 7, 8, 14 GND 13 N.C. AEB02565 Figure 2 Block Diagram Daa Shee Rev

5 6 Funcional Descripion and Applicaion Hins 6.1 Mode Conrol By use of he wo mode conrol pins M0 and M1 he ransceiver can be se in he following modes. Table 1 Transceiver Modes # M0 M1 Mode 1 Low Low Sleep mode 2 High Low High speed mode 3 Low High Wake-up call 4 High High Normal mode Sleep-Mode In he sleep mode he oal curren consumpion of he TLE 6255 G is reduced o ypically 30 µa. Nodes no se o sleep mode can communicae wihou disurbing ECUs ha are already se o sleep mode. To achieve a wake-up via he CAN bus a high volage level message (wake-up call) is necessary. Only high volage level messages are repored o he RxD pin in sleep mode. A wake-up from sleep mode of he ransceiver iself has o be done by seing he conrol inpus M0 and M1. If here is no modificaion on he mode inpus he device remains in sleep mode afer he wake-up signal is removed from he bus. The ransceiver s loss of ground proecion circui connecion o ground is no inerruped when in he sleep mode. High-Speed-Mode The high-speed mode can be used for sofware or diagnosic daa download wih biraes up o 100 kbi/s. Therefore he slewrae conrol feaure is deacivaed o achieve he required imings. Furher an addiional exernal resisor of 100 Ω from CANH o GND is necessary in his mode. Wakeup-Call Mode In his mode he TLE 6255 G sends he message o be ransmied as a high volage wake-up message. The bus includes a special node wake up capabiliy which allows normal communicaion o ake place among some nodes while leaving he oher nodes in an undisurbed sleep sae. This is accomplished by conrolling he level of he signal volages such ha all nodes mus wake up when hey receive a higher volage message signal waveform. Communicaion a he lower, normal volage levels shall no disurb he sleeping nodes (V ba >9V). Daa Shee Rev

6 Normal Mode In he normal mode he TLE 6255 G sends a normal volage message waveform on he bus. I is possible o run he ransceiver up o ransmission raes of 33 kbis/s in his mode. The waveform as well as he slew rae of he rising edge (recessive o dominan ransiion) are conrolled by he inernal acive wave shaping circui o minimize EME (elecromagneic emission). For he same reason waveform railing edge conrol is required o assure ha high frequency conen is minimized a he beginning of he downward volage slope (dominan o recessive ransiion). The remaining fall ime occurs afer he bus is inacive wih drivers off and is deermined by he RC ime consan of he oal bus load. 6.2 Slew-Rae Conrol The CANH oupu volage and curren is conrolled by an inernal waveshaping circui. For opimized adjusing of he slew rae o he sysem iming, he slew rae is programmable by an exernal resisor conneced from pin RSL o V CC. Figure 4 shows he correlaion of he slew rae o he resisor R RSL. 6.3 Transmier The TLE 6255 G conains a high curren fully shor circui and overemperaure proeced highside-driver (pin CANH). To minimize specral conen he CANH-oupu waveform is conrolled. Logic low (TxD = L) on pin TxD will command he oupu sage o swich o dominan high poenial; TxD = H o recessive low on he bus. To avoid he bus o be blocked by a permanen dominan TxD inpu signal, he TLE 6255 G incorporaes a imeou feaure. In case of TxD = L for longer han he inernal fixed imeou he CANH oupu is swiched off auomaically. The imeou is reseed by a H-signal a TxD wihou a delay. The loss of an ECU ground may cause he ECU o source curren hrough he various ECU circuis o he communicaions bus insead of o he vehicle sysem ground. Therefore he uni-load resisor of any ECU is conneced o he LOAD-pin. The TLE 6255 G incorporaes a reverse proeced swich from LOAD o ground poenial. This swich is auomaically swiched off in a loss of ground sae. 6.4 Receiver In normal, high speed and wakeup-mode all daa on he bus is sensed by he receive comparaor and ransmied o he RxD oupu. In sleep mode no normal level daa is deeced. The receiver hreshold is se o he wake-up level. So a wake-up inerrup is sen only in case of a wake-up call on he bus. An inernal fixed filer improves he EMC suscepibiliy. Daa Shee Rev

7 7 Absolue Maximum Raings Parameer Symbol Limi Values Uni Remarks min. max. Volages Supply volage V ba V CAN bus inpu/oupu volage V CANH V Load volage V LOAD V Logic supply volage V CC V Logic volages (V RxD ; V TxD ; V M0 ; V M1 ; V RSL ) V logic V Currens CAN Bus curren I CANH ma inernally limied Load curren I LOAD ma inernally limied ESD-Proecion (Human Body Model; According o MIL STD 833 D) Pin CANH, V ba V ESD V Oher pins V ESD V Temperaures Juncion emperaure T j C Juncion emperaure T j 175 C < 1000 h Juncion emperaure T j 200 C <10h Sorage emperaure T sg C Thermal Resisances Juncion o pin R hj-pin 40 K/W juncion o pin 1 Juncion ambien R hj-a 65 K/W Noe: Maximum raings are absolue raings; exceeding any one of hese values may cause irreversible damage o he inegraed circui. Daa Shee Rev

8 8 Operaing Range Parameer Symbol Limi Values Uni Remarks min. max. Supply volage V ba V UVOFF 28 V Afer V ba rising above V UV ON Supply volage increasing V ba 0.3 V UV ON V Oupus in risae Supply volage decreasing V ba 0.3 V UV OFF V Oupus in risae Logic supply volage V CC V POROF 5.5 V Afer V CC rising above V PORON Logic supply volage; V CC 0.3 V PORON V Oupus in risae increasing Logic supply volage; V CC 0.3 V POROF V Oupus in risae decreasing Juncion emperaure T j C RSL resisance R RSL kω Thermal Shudown Thermal shudown juncion emperaure Thermal swich-on juncion emperaure T jsd C T jso C emperaure hyseresis T = 30 K (yp.) Daa Shee Rev

9 9 Elecrical Characerisics 5.5 V < V ba < 16 V; 4.75 V < V CC <5.25 V; 40 C <T j <150 C; M0 = M1 = H; R UL =9.1 kω (conneced beween CANH and LOAD);=R RSL =39kΩ; all volages wih respec o ground; posiive curren defined flowing ino pin; unless oherwise specified Parameer Symbol min. yp. Limi Values Uni Tes Condiion max. Curren Consumpion Supply curren a V ba ; I ba µa M0 = M1 = L; sleep mode Supply curren a V CC ; I CC µa M0 = M1 = L; sleep mode Supply curren a V ba I ba 3 6 ma TxD = L Supply curren a V ba I ba ma TxD = H Supply curren a V ba I ba 5 9 ma TxD = L; M0 = L Supply curren a V ba I ba 4 6 ma TxD = H; M0 = L Supply curren a V CC I CC 3 5 ma TxD = H or L; M0 = H or L Over- and Under Volage Lockou UV Swich ON volage V UVON V V ba increasing; V CC = 5 V UV Swich OFF volage V UVOFF V V ba decreasing; V CC =5 V UV ON/OFF V UVHY 0.6 V V UVON V UVOFF Hyseresis OV Swich OFF volage V OVOFF V V ba increasing OV Swich ON volage V OVON V V ba decreasing OV ON/OFF Hyseresis V OVHY V V OVOFF V OVON Daa Shee Rev

10 5.5 V < V ba < 16 V; 4.75 V < V CC <5.25 V; 40 C <T j <150 C; M0 = M1 = H; R UL =9.1 kω (conneced beween CANH and LOAD);=R RSL =39kΩ; all volages wih respec o ground; posiive curren defined flowing ino pin; unless oherwise specified Parameer Symbol Limi Values min. yp. max. Uni Tes Condiion Power ON/OFF Rese a V CC Power ON Rese volage Power OFF Rese volage POR ON/OFF Hyseresis V PORON V V CC increasing V POROF V V CC decreasing V PORHY V V PORON V POROF Transceive Inpu TxD H-inpu volage hreshold L-inpu volage hreshold Hyseresis of inpu volage V 2.4 V V TxDH V CC V TxDL 0.3 V CC V TxDHY mv Pull up curren I TxD µa 0 V <V TxD <4 V Timeou reacion ime TOR ms Receive Oupu RxD Oupu leakage curren I RxDLK µa V RxD =5 V Oupu low volage V RxDL V I RxDL =2 ma level Fallime FRxD ns C RxD = 25 pf o GND Daa Shee Rev

11 5.5 V < V ba < 16 V; 4.75 V < V CC <5.25 V; 40 C <T j <150 C; M0 = M1 = H; R UL =9.1 kω (conneced beween CANH and LOAD);=R RSL =39kΩ; all volages wih respec o ground; posiive curren defined flowing ino pin; unless oherwise specified Parameer Symbol min. yp. Limi Values Uni Tes Condiion max. Mode Inpu M0 and M1 H-inpu volage hreshold L-inpu volage hreshold Hyseresis of inpu volage V 2.4 V V M0,1H V CC V M0,1L 0.3 V CC V M0,1HY mv Pull down curren I M0, µa 1 V <V M0,1 <5V Mode Change Delayimes Normal o high-speed DNH 5 30 µs M1 H o L; (guaraneed by design) Normal o wakeup call DNW 5 30 µs M0 H o L (guaraneed by design) Normal o sleep DNS µs M0 and M1 H o L (guaraneed by design) Sleep o normal DSN 5 50 µs M0 and M1 L o H (guaraneed by design) Slewrae Inpu RSL Oupu volage V RSL V I RSL = 100 µa Daa Shee Rev

12 5.5 V < V ba < 16 V; 4.75 V < V CC <5.25 V; 40 C <T j <150 C; M0 = M1 = H; R UL =9.1 kω (conneced beween CANH and LOAD);=R RSL =39kΩ; all volages wih respec o ground; posiive curren defined flowing ino pin; unless oherwise specified Parameer Symbol Limi Values min. yp. max. Uni Tes Condiion CANH as Bus Inpu / Receiver Wake up offse hreshold Wake up fixed hreshold V IHWUO V ba 4.30 V ba 3.25 V V ba = 8 V see noe; see Figure 8 V IHWUF V V ba = 14 V see noe; see Figure 8 Wakeup dead ime DWU µs Wakeup minimal pulse WUMIN µs ime Receive hreshold; in normal, high-speed and wake-up mode V IH V 6 V < V ba <16V Receive hyseresis V RHY mv Receive propagaion ime Receive propagaion ime; high speed Receive propagaion ime Receive propagaion ime; high speed Receive blanking ime afer CANH H o L ransiion CRF µs V CANH >(V IH V) o RxD = L; 6 V < V ba <16 V CRF µs V CANH >(V IH V) o RxD = L; M1 = L; 6V<V ba <16V; T j <125 C CRR µs V CANH < (V IH 0.8 V) o RxD = H; R RxD =2.4kΩ 6V<V ba <16V CRR µs V CANH < (V IH 0.8 V) o RxD = H; R RxD =2.4kΩ M1 = L; 6 V < V ba <16V; T j <125 C CRB µs see Figure 7 Noe: The device will send a wake up call o he microconroller a he minimum of V IHWUO or V IHWUF. Daa Shee Rev

13 5.5 V < V ba < 16 V; 4.75 V < V CC <5.25 V; 40 C <T j <150 C; M0 = M1 = H; R UL =9.1 kω (conneced beween CANH and LOAD);=R RSL =39kΩ; all volages wih respec o ground; posiive curren defined flowing ino pin; unless oherwise specified Parameer Symbol min. yp. Limi Values Uni Tes Condiion max. CANH as Bus Oupu / Transmier Offse wakeup oupu high volage Fixed wakeup oupu high volage Bus oupu high volage; normal and high speed V OHWUO V ba 1.5 V ba V 220 Ω < R UL <9.1kΩ; TxD = L; M0 = L; 6V<V ba <V OHWUF V OHWUF V 220 Ω < R UL <9.1kΩ= TxD = L; M0 = L V OHWUF < V ba <16V V OH V 100 Ω < R UL <9.1 kω= TxD = L; 6 V < V ba <16V Bus oupu curren limi I OLI ma TxD = L; V CANH =0 V Bus oupu leakage curren I OLK µa TxD = H; T j < 125 C; V ba 28V<V CANH < V ba 1V Bus oupu leakage curren (loss of ground) I OLK µa 0 V <V ba < V UVOFF ; V ba 28 V<V CANH < V ba 1 V Slew rae rising edge, normal mode S CANH 2.0 V/µs 20% < V CANH <80% Slew rae rising edge, wake-up mode Slew rae rising edge; high speed; Transmi propagaion ime; normal mode Transmi propagaion ime; wake-up mode S CANH 4.0 V/µs 20% < V CANH <80% M0 = L; V ba =12V S CANH V/µs 20% < V CANH <80% M1 = L; T j < 125 C TCF µs TxD = (H o L) o V CANH =(V IH +0.8V) 1.0 µs < τ=< 3.6 µs; TCF µs TxD = (H o L) o V CANH =(V IH V); M0 = L; V ba = 12 V; 1.0 µs < τ=< 3.6 µs Daa Shee Rev

14 5.5 V < V ba < 16 V; 4.75 V < V CC <5.25 V; 40 C <T j <150 C; M0 = M1 = H; R UL =9.1 kω (conneced beween CANH and LOAD);=R RSL =39kΩ; all volages wih respec o ground; posiive curren defined flowing ino pin; unless oherwise specified Parameer Symbol min. yp. Limi Values Uni Tes Condiion max. Transmi propagaion ime; high speed mode Transmi propagaion ime; normal mode Transmi propagaion ime; wake-up mode Transmi propagaion ime; high speed TCF µs TxD = (H o L) o V CANH =(V IH V); M1 = L;=τ=< 1 µs; T j <125 C TCR µs TxD=(LoH) o V CANH =(V IH 0.8V) 1.0 µs < τ=< 3.6 µs; TCR µs TxD=(LoH) o V CANH =(V IH 0.8 V); M0 = L; 1.0 µs < τ=< 3.6 µs; TCRH 3.0 µs TxD=(LoH) o V CANH =(V IH 0.8 V); M1 = L; τ < 1.6 µs; T j < 125 C Uni-Load Resisor Ground Inpu LOAD Oupu low volage level Oupu leakage curren (loss of ground) V LOAD mv I LOAD =2mA; 8V<V ba <16V I LOADLK µa 0 V <V ba < V UVOFF T j <125= C; V ba 28V < V CANH < V ba 1V Daa Shee Rev

15 10 Diagrams V TxD 50% TCF TCR V CANH 80% V IH V V IH 20% V RxD R CRF F CRR 50% Bus Oupu Slewrae Definiion: S CANH = V wih 20% < V CANH < 80% AET02566 Figure 3 Inpu/Oupu-Timing (Pin CANH, TxD and RxD) Daa Shee Rev

16 5.0 S CANH V µs AED kohm R RSL 1000 Figure 4 Slewrae S CANH vs. Programming Resisor R RSL (Pin RSL) V CANH V IHWU V IH V RxD p DWU No Wake Up p < DWU DWU p WUMIN Conroller Wake Up p DWU < AET02571 Figure 5 Wakeup Deadime DWU Daa Shee Rev

17 V TxD V IH V CANH Parasiic dominan "L" on TxD V IH Time Ou Couner H L Acive Time Ou Passive TOR Saus Normal Operaion Bus Blocked Bus Available Normal Operaion AET02572 Figure 6 Bus Dominan Blanking Time TOR Daa Shee Rev

18 V TxD V CANH Bus Ringing Bus Ringing V IH V RxD CRB Wihou Blanking Feaure Wih Blanking Feaure AET02573 Figure 7 RxD Blanking Time CRB Daa Shee Rev

19 8 V V 7 IHWU T j = 150 C T j = 25 C T j = -40 C AED V 26 V S Figure 8 Wake-up Threshold V IHWU vs. Supply Volage V S Daa Shee Rev

20 11 Applicaion Circui ECU R WADJ 91 kω Wachdog Adjus Rese-Threshold Adjus (opional) 7 C 0 Rese Delay 6 47 nf C S1 220 nf V Ι 2 13 TLE 4278G 3-5, GND Wachdog Inpu Wachdog Oupu Rese Oupu V Q C CC1 22 µf C CC2 V CC D R V Baery Single Wire CAN Bus 1N4001 L UL 47 µh C UL 220 pf C S2 100 nf CANH 12 C S3 4.7 µ F R UL 9.1 kω Load V Ba 6 TLE 6255G V CC 1, 7, 8, 14 GND 9 RSL 3 M0 4 5 M1 RxD 2 TxD R RSL R RxD 100 kω 2.4 kω R TxD 10 kω Conroller GND AES02574 Figure 9 Applicaion Circui Daa Shee Rev

21 12 Package Oulines P-DSO-14-9 (Plasic Dual Small Ouline) GPS09222 Sors of Packing Package oulines for ubes, rays ec. are conained in our Daa Book Package Informaion. SMD = Surface Mouned Device Dimensions in mm Daa Shee Rev

22 Daa Shee Rev

23 Ediion Published by Infineon Technologies AG, S.-Marin-Srasse 53, D München Infineon Technologies AG All Righs Reserved. Aenion please! The informaion herein is given o describe cerain componens and shall no be considered as warraned characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of non-infringemen, regarding circuis, descripions and chars saed herein. Infineon Technologies is an approved CECC manufacurer. Informaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares Infineon Technologies Office in Germany or our Infineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares Infineon Technologies Office. Infineon Technologies Componens may only be used in life-suppor devices or sysems wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec Daa Shee Rev

5-V Low Drop Fixed Voltage Regulator TLE 4268

5-V Low Drop Fixed Voltage Regulator TLE 4268 5-V Low Drop Fixed Volage Regulaor TLE 4268 Feaures Oupu volage olerance ±2% Very low curren consumpion Low-drop volage Wachdog Seable rese hreshold Overemperaure proecion Reverse polariy proecion Shor-circui

More information

Smart Two Channel Highside Power Switch

Smart Two Channel Highside Power Switch Smar Two Channel ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse

More information

Smart Power High-Side-Switch

Smart Power High-Side-Switch Smar Power High-Side-Swich Feaures Overload proecion Produc Summary Overvolage proecion bb(az) 4 Curren limiaion Operaing volage bb(on) 5...34 Shor circui proecion On-sae resisance R ON 35 mω Thermal shudown

More information

Smart High-Side Power Switch

Smart High-Side Power Switch PROFET BTS26 Smar igh-side Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse

More information

Type Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2

Type Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2 SMBT94...MMBT94 NPN Silicon Swiching Transisors High D curren gain:. ma o ma Low collecoremier sauraion volage For SMBT94S: Two (galvanic) inernal isolaed ransisors wih good maching in one package omplemenary

More information

Smart Highside Power Switch

Smart Highside Power Switch Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion

More information

Data Sheet, Rev. 1.1, September 2011 HITFET - BTS3405G. Smart Low-Side Power Switch. Automotive Power

Data Sheet, Rev. 1.1, September 2011 HITFET - BTS3405G. Smart Low-Side Power Switch. Automotive Power Daa Shee, Rev. 1.1, Sepember 2011 HITFET - Smar Low-Side Power Swich Auomoive Power 1 Overview....................................................................... 3 2 Block Diagram...................................................................

More information

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection Feaures Logic Level Inpu Inpu Proecion (ESD) Thermal shudown Green produc (RoHS complian) Overload proecion Shor circui proecion Overvolage proecion Curren limiaion nalog driving possible Produc Summary

More information

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection HITFET BTS N Feaures Logic Level Inpu Inpu Proecion (ESD) Thermal shudown Green produc (RoHS complian) Overload proecion Shor circui proecion Overvolage proecion Curren limiaion nalog driving possible

More information

Smart Highside Power Switch

Smart Highside Power Switch Smar ighside Power Swich Feaures oad dump and reverse baery proecion 1) Clamp of negaive volage a oupu Shor-circui proecion Curren limiaion Thermal shudown Diagnosic feedback Open load deecion in ON-sae

More information

Smart Sense High-Side Power Switch For Industrial Applications

Smart Sense High-Side Power Switch For Industrial Applications Smar Sense High-Side Power Swich For ndusrial Applicaions Feaures Shor circui proecion Curren limiaion Proporional load curren sense CMOS compaible inpu Open drain diagnosic oupu Fas demagneizaion of inducive

More information

PROFET BTS 840 S2. Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense

PROFET BTS 840 S2. Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense POFET BTS 84 S2 Smar High-Side Power Swich Two Channels: 2 x 3mΩ Curren Sense Produc Summary Package Operaing olage (on) 5...34 Acive channels: one wo parallel On-sae esisance ON 3mΩ 15mΩ oad Curren (SO)

More information

Smart Lowside Power Switch HITFET BSP 75N

Smart Lowside Power Switch HITFET BSP 75N Smar Lowside Power Swich HITFET BSP 75N Daa Shee Rev. 1.4 Feaures Logic Level Inpu Inpu proecion (ESD) Thermal shudown wih auo resar Overload proecion Shor circui proecion Overvolage proecion Curren limiaion

More information

HITFET HITFET - BTS3046SDR. Datasheet. Automotive Power. Smart Low Side Power Switch

HITFET HITFET - BTS3046SDR. Datasheet. Automotive Power. Smart Low Side Power Switch HITFET Smar Low Side Power Swich HITFET - BTS3046SDR 46 mohm single channel smar low side power swich for 12V & 24V Applicaion Daashee Rev. 1.0, 2009-12-06 Auomoive Power 1 Overview.......................................................................

More information

HV513 8-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs, POL, Hi-Z, and Short Circuit Detect

HV513 8-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs, POL, Hi-Z, and Short Circuit Detect H513 8-Channel Serial o Parallel Converer wih High olage Push-Pull s, POL, Hi-Z, and Shor Circui Deec Feaures HCMOS echnology Operaing oupu volage of 250 Low power level shifing from 5 o 250 Shif regiser

More information

Type Ordering Code Package TLE 4729 G Q67006-A9225 P-DSO-24-3 (SMD)

Type Ordering Code Package TLE 4729 G Q67006-A9225 P-DSO-24-3 (SMD) 2-Phase Sepper-Moor Driver Bipolar-IC TE 4729 G Feaures 2.7 amp. full bridge oupus Inegraed driver, conrol logic and curren conrol (chopper) ery low curren consumpion in inhibi mode Fas free-wheeling diodes

More information

Data Sheet, Rev. 1.0, March 2008 BTS4300SGA. Smart High-Side Power Switch. Automotive Power

Data Sheet, Rev. 1.0, March 2008 BTS4300SGA. Smart High-Side Power Switch. Automotive Power Daa Shee, Rev. 1.0, March 2008 BTS4300SGA Smar High-Side Power Swich Auomoive Power BTS 4300SGA 1 Overview 3 2 Block Diagram 5 3 Pin Configuraion 6 3.1 Pin Assignmen 6 3.2 Pin Definiions and Funcions 6

More information

Data Sheet, Rev. 1.0, March 2008 BTS4130QGA. Smart High-Side Power Switch. Automotive Power

Data Sheet, Rev. 1.0, March 2008 BTS4130QGA. Smart High-Side Power Switch. Automotive Power Daa Shee, Rev. 1.0, March 2008 Smar High-Side Power Swich Auomoive Power BTS 4130QGA 1 Overview 3 2 Block Diagram 5 3 Pin Configuraion 6 3.1 Pin Assignmen 6 3.2 Pin Definiions and Funcions 6 3.3 Volage

More information

Smart Highside Power Switch PROFET

Smart Highside Power Switch PROFET Smar ighside Power Swich PROFET BTS 410E2 Feaures TO220AB/ Overload proecion Curren limiaion Shor circui proecion Thermal shudown 1 1 Overvolage proecion (including Sandard Sraigh leads SMD load dump)

More information

2-Phase Stepper-Motor Driver Bipolar-IC TLE4729G

2-Phase Stepper-Motor Driver Bipolar-IC TLE4729G 2-Phase Sepper-Moor Driver Bipolar-IC TLE4729G Feaures 2.7 amp. full bridge oupus Inegraed driver, conrol logic and curren conrol (chopper) ery low curren consumpion in inhibi mode Fas free-wheeling diodes

More information

Smart Highside Power Switch

Smart Highside Power Switch Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion

More information

Smart Highside Power Switch

Smart Highside Power Switch Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion

More information

Datasheet, Rev. 1.1, February 2008 BTS3160D. 10mOhm Smart Low Side Power Switch. Automotive Power

Datasheet, Rev. 1.1, February 2008 BTS3160D. 10mOhm Smart Low Side Power Switch. Automotive Power Daashee, Rev. 1.1, February 2008 BTS3160D 10mOhm Smar Low Side Power Swich Auomoive Power Table of Conens Table of Conens Table of Conens................................................................

More information

Data Sheet, Rev. 1.0, March 2008 BTS4160DGA. Smart High-Side Power Switch. Automotive Power

Data Sheet, Rev. 1.0, March 2008 BTS4160DGA. Smart High-Side Power Switch. Automotive Power Daa Shee, Rev. 1.0, March 2008 BTS4160DGA Smar High-Side Power Swich Auomoive Power 1 Overview 3 2 Block Diagram 5 3 Pin Configuraion 6 3.1 Pin Assignmen 6 3.2 Pin Definiions and Funcions 6 3.3 Volage

More information

Smart Highside Power Switch

Smart Highside Power Switch Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion

More information

Data Sheet, Rev.1.0, April 2008 BTS4175SGA. Smart High-Side Power Switch. Automotive Power

Data Sheet, Rev.1.0, April 2008 BTS4175SGA. Smart High-Side Power Switch. Automotive Power Daa Shee, Rev.1.0, April 2008 BTS4175SGA Smar High-Side Power Swich Auomoive Power 1 Overview 3 2 Block Diagram 5 3 Pin Configuraion 6 3.1 Pin Assignmen 6 3.2 Pin Definiions and Funcions 6 3.3 Volage and

More information

Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ

Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ Smar HighSide Power Swich for ndusrial Applicaions Channel: x mω Feaures Shor circui proecion Curren limiaion Overload proecion Overvolage proecion (including load dump) Undervolage shudown wih auoresar

More information

Dual Low Drop Voltage Regulator TLE 7469

Dual Low Drop Voltage Regulator TLE 7469 Dual Low Drop Volage Regulaor TLE 7469 Feaures Dual oupu 5 V (±2%), 215mA and 2.6 V 1) (±4%), 200mA or 5 V (±2%), 215mA and 3.3 V (±3%), 200mA Ulra low quiescen curren consumpion < 55 µa Inhibi funcion

More information

Smart Sense High-Side Power Switch

Smart Sense High-Side Power Switch Smar Sense High-Side Power Swich Feaures Shor circui proecion Curren limiaion Proporional load curren sense CMOS compaible inpu Open drain diagnosic oupu Fas demagneizaion of inducive loads Undervolage

More information

Smart High-Side Power Switch

Smart High-Side Power Switch Smar ighside Power Swich PROFET BTS10F2 Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse

More information

Smart Highside Power Switch

Smart Highside Power Switch Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor-circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion

More information

Data Sheet, V1.0, January 2004 BTS 5234L. Smart High-Side Power Switch PROFET Two Channels, 60 mω. Automotive Power. Never stop thinking.

Data Sheet, V1.0, January 2004 BTS 5234L. Smart High-Side Power Switch PROFET Two Channels, 60 mω. Automotive Power. Never stop thinking. Daa Shee, V1.0, January 2004 PROFET Two Channels, 60 mω Auomoive Power Never sop hinking. Table of Conens Page Produc Summary....................................................3 1Overview.........................................................5

More information

Infineon Basic LED Driver TLD1124EL. Data Sheet. Automotive. 1 Channel High Side Current Source. Rev. 1.0,

Infineon Basic LED Driver TLD1124EL. Data Sheet. Automotive. 1 Channel High Side Current Source. Rev. 1.0, Infineon Basic LED Driver 1 Channel High Side Curren Source Daa Shee Rev. 1.0, 2013-08-08 Auomoive 1 Overview....................................................................... 3 2 Block Diagram...................................................................

More information

P r e lim ina r y - S u b j e c t to C h a n g e. Industrial High Speed CAN-FD Transceiver. Preliminary Data Sheet. Standard Power

P r e lim ina r y - S u b j e c t to C h a n g e. Industrial High Speed CAN-FD Transceiver. Preliminary Data Sheet. Standard Power Indusrial High Speed CAN-FD Transceiver CAN wih Flexible Daa-Rae P r e lim ina r y - S u b j e c o C h a n g e Preliminary Daa Shee Rev. 0.92, 2015-07-28 Sandard Power Table of Conens Table of Conens................................................................

More information

SOTiny TM LVDS High-Speed Differential Line Receiver. Features. Description. Applications. Pinout. Logic Diagram. Function Table

SOTiny TM LVDS High-Speed Differential Line Receiver. Features. Description. Applications. Pinout. Logic Diagram. Function Table 67890678906789067890678906789067890678906789067890678906789067890 SOTiny TM LVDS High-Speed Differenial Line Receiver Feaures Mees or Exceeds he Requiremens of NSI TI/EI-6-99 Sandard Signaling raes up

More information

IGBT Highspeed5IGBTinTRENCHSTOP TM 5technology. IGZ100N65H5 650VIGBThighspeedseriesfifthgeneration. Datasheet. IndustrialPowerControl

IGBT Highspeed5IGBTinTRENCHSTOP TM 5technology. IGZ100N65H5 650VIGBThighspeedseriesfifthgeneration. Datasheet. IndustrialPowerControl IGBT HighspeedIGBTinTRENCHSTOP TM echnology IGZ1NH VIGBThighspeedseriesfifhgeneraion Daashee IndusrialPowerConrol IGZ1NH Highspeedseriesfifhgeneraion HighspeedIGBTinTRENCHSTOP TM echnology FeauresandBenefis:

More information

AMIS LIN Transceiver

AMIS LIN Transceiver AMIS-000 Transceiver General Descripion The single wire ransceiver AMIS 000 is a monolihic inegraed circui in a SOIC 8 package. I works as an inerface beween he proocol conroller and he physical bus. The

More information

TLD2326. Internal supply. Thermal protection IN_SET3 IN_SET2 IN_SET1. Current adjustment TLD2326EL CFB

TLD2326. Internal supply. Thermal protection IN_SET3 IN_SET2 IN_SET1. Current adjustment TLD2326EL CFB 3 Channel High-Side Curren Source Package Marking PG-SSOP-14 TLD2326 1 Overview Applicaions Exerior LED lighing applicaions such as ail/brake ligh, urn indicaor, posiion ligh, side marker,... Inerior LED

More information

MC3x063A 1.5-A Peak Boost/Buck/Inverting Switching Regulators

MC3x063A 1.5-A Peak Boost/Buck/Inverting Switching Regulators MC3303A, MC3403A SLLS3N DECEMBER 004 REVISED JANUARY 05 MC3x03A.5-A Peak Boos/Buck/Invering Swiching Regulaors Feaures 3 Descripion Wide Inpu Volage Range: 3 V o 40 V The MC3303A and MC3403A devices are

More information

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel Small Signal Fas Swiching Diode Feaures These diodes are also available in oher case syles including he DO- case wih he ype designaion N8, he MiniMELF case wih he ype designaion LL8, and he SOT- case wih

More information

MC74HC138A. 1 of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS

MC74HC138A. 1 of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS of 8 Decoder/ Demuliplexer High Performance Silicon Gae CMOS The is idenical in pinou o he LS8. The device inpus are compaible wih sandard CMOS oupus; wih pullup resisors, hey are compaible wih LSTTL oupus.

More information

3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC /20 NTC. Features / Advantages: Applications: Package: E2-Pack

3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC /20 NTC. Features / Advantages: Applications: Package: E2-Pack ZB3-6ioX hyrisor Module M = 6 I = D FSM = 7 I 3~ ecifier Brake hopper ES = 2 I = 2 2 E(sa) =,8 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni + N Par number ZB3-6ioX Backside: isolaed / 3 2

More information

NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor April 996 NP45L / NB45L N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These logic level N-Channel enhancemen mode power field effec ransisors are produced using

More information

PT8A A-F/67A/68A NTC Heating Controller with Multi LEDs

PT8A A-F/67A/68A NTC Heating Controller with Multi LEDs PTA-A-F/A/A Feaures / seps hea emperaure seings wih EDs or EDs indicaor Auo emperaure conrol wih TC TC open proecion Pulse rigger for high curren / TRIAC (up o ma) Auo power off afer exac Hour heaing(i

More information

onlinecomponents.com OPTOLOGIC OPTICAL INTERRUPTER SWITCH QVE00112 PACKAGE DIMENSIONS FEATURES 6/10/04

onlinecomponents.com OPTOLOGIC OPTICAL INTERRUPTER SWITCH QVE00112 PACKAGE DIMENSIONS FEATURES 6/10/04 PACKAGE DIMENSIONS.714 (18.15).123 (3.125).189 (4.82).14 (.356).327 (8.31) Ø 3.3.1 (2.54).173 (4.4) OPTICAL C L 13.78 (35) ±.275 (7).316 (8.25) GRN WHT.464 (11.8).143 (3.625).118 (3.) GRY.173 (4.4).246.276

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor PHE39 GENERAL DESCRIPTION The PHE39 is a silicon npn power swiching ransisor in he TO22AB envelope inended for use in high frequency elecronic lighing ballas applicaions, converers, inverers, swiching

More information

EECS 141: FALL 00 MIDTERM 2

EECS 141: FALL 00 MIDTERM 2 Universiy of California College of Engineering Deparmen of Elecrical Engineering and Compuer Science J. M. Rabaey TuTh9:30-11am ee141@eecs EECS 141: FALL 00 MIDTERM 2 For all problems, you can assume he

More information

SFH636. Optocoupler, Phototransistor Output, 1 Mbd, 10 kv/ms CMR, Split CollectorTransistor Output VISHAY. Vishay Semiconductors.

SFH636. Optocoupler, Phototransistor Output, 1 Mbd, 10 kv/ms CMR, Split CollectorTransistor Output VISHAY. Vishay Semiconductors. Opocoupler, Phooransisor Oupu, Mbd, kv/ms CMR, Spli CollecorTransisor Oupu Feaures High Speed Opocoupler wihou Base Connecion Isolaion Tes Volage: 3 V RMS GaAlAs Emier Inegraed Deecor wih Phoo diode and

More information

p h a s e - o u t Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM X2

p h a s e - o u t Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM X2 GWM 18-4X2 Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 4 V 25 = 18 R DSon yp. = 1.9 mw Preliminary daa G1 G3 G5 L+ S1 G2 S3 G4 S5 G6 L1 L2 L3 Sraigh leads Surface

More information

PI5A3157. SOTINY TM Low Voltage SPDT Analog Switch 2:1 Mux/Demux Bus Switch. Features. Descriptio n. Applications. Connection Diagram Pin Description

PI5A3157. SOTINY TM Low Voltage SPDT Analog Switch 2:1 Mux/Demux Bus Switch. Features. Descriptio n. Applications. Connection Diagram Pin Description PI53157 OINY M Low Volage PD nalog wich 2:1 Mux/Demux Bus wich Feaures CMO echnology for Bus and nalog pplicaions Low ON Resisance: 8-ohms a 3.0V Wide Range: 1.65V o 5.5V Rail-o-Rail ignal Range Conrol

More information

Features / Advantages: Applications: Package: Y4

Features / Advantages: Applications: Package: Y4 IGBT (NPT) Module CES = 12 I C2 = 16 = 2.2 CE(sa) Boos Chopper + free wheeling Diode Par number MID14-123 Backside: isolaed 1 3 4 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low sauraion

More information

Standard Rectifier Module

Standard Rectifier Module UB2-6NOX Sandard ecifier Module M = 6 I = 8 D 3~ ecifier I SM = Brake hopper ES = 2 I = 8 25 E(sa) =.7 3~ ecifier Bridge + Brake Uni Par number UB2-6NOX M/O S Backside: isolaed ~6 ~E6 ~K6 U/ W M/O W U

More information

ResonantSoft-SwitchingSeries ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching

ResonantSoft-SwitchingSeries ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching ResonanSofSwichingSeries ReverseconducingIGBTwihmonolihicbodyDiodeforsofswiching IHWN12E1 Daashee IndusrialPowerConrol IHWN12E1 ResonanSofSwichingSeries ReverseconducingIGBTwihmonolihicbodydiode Feaures:

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION High volage, high-speed swiching npn ransisor wih inegraed damper diode in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers.

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION High volage, high speed swiching npn ransisor in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers. Feaures excepional olerance

More information

Features / Advantages: Applications: Package: Y4

Features / Advantages: Applications: Package: Y4 IGBT (NPT) Module CES = x 1 I C = 9 =. CE(sa) Phase leg Par number MII7-13 1 Backside: isolaed 7 3 Feaures / dvanages: pplicaions: Package: Y NPT IGBT echnology low sauraion volage low swiching losses

More information

NCN5150. Wired M-BUS Slave Transceiver

NCN5150. Wired M-BUS Slave Transceiver Wired M-BUS Slave Transceiver Descripion The is a single-chip inegraed slave ransceiver for use in wo-wire Meer Bus (M-BUS) slave devices and repeaers. The ransceiver provides all of he funcions needed

More information

TLE94003EP. Features. Potential applications. Product validation. Description

TLE94003EP. Features. Potential applications. Product validation. Description Feaures Three half bridge power oupus Very low power consumpion in sleep mode 3.3V / 5V compaible inpus wih hyseresis All oupus wih overload and shor circui proecion Direc inerface for conrol and diagnosis

More information

Features / Advantages: Applications: Package: Y4

Features / Advantages: Applications: Package: Y4 IGBT (NPT) Module CES = 12 I C25 = 16 = 2.2 CE(sa) Buck Chopper + free wheeling Diode Par number MDI145-123 Backside: isolaed 1 7 6 3 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low

More information

PI74STX1G126. SOTiny Gate STX Buffer with 3-State Output. Features. Descriptio n. Block Diagram. Pin Configuration

PI74STX1G126. SOTiny Gate STX Buffer with 3-State Output. Features. Descriptio n. Block Diagram. Pin Configuration PI74STXG6 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 SOTiny

More information

Analogue amplifier card for 4/3 proportional directional valves of type 4WRE

Analogue amplifier card for 4/3 proportional directional valves of type 4WRE Analogue amplifier card for / proporional direcional valves of ype WRE RE 09/07.05 Replaces: 06.0 /0 Type VT-VRPA-.-X/ Series X H66 Table of conens Conens Page Feaures Ordering code Funcion Block circui

More information

SFH636. Pb Pb-free. Optocoupler, Phototransistor Output, 1 Mbd, 10 kv/ms CMR, Split CollectorTransistor Output VISHAY. Vishay Semiconductors

SFH636. Pb Pb-free. Optocoupler, Phototransistor Output, 1 Mbd, 10 kv/ms CMR, Split CollectorTransistor Output VISHAY. Vishay Semiconductors Opocoupler, Phooransisor Oupu, Mbd, kv/ms CMR, Spli CollecorTransisor Oupu Feaures High Speed Opocoupler wihou Base Connecion Isolaion Tes Volage: 3 V RMS GaAlAs Emier Inegraed Deecor wih Phoo diode and

More information

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output. i179081

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output. i179081 High Speed Opocoupler, MBd, Phoodiode wih Transisor Oupu Feaures Isolaion Tes Volage: V RMS TTL Compaible High Bi Raes:. Mbi/s High Common-Mode Inerference Immuniy Bandwidh. MHz Open-Collecor Oupu Exernal

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved RBSOA performance

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision

More information

Airbag Power Supply IC ATA6264. Preliminary

Airbag Power Supply IC ATA6264. Preliminary Feaures Maximum Supply Volage 40V One Programmable/djusable Boos Converer Two Programmable Buck Converers One Programmable Linear Regulaor OTP Cusomer Mode 16-bi Serial Inerface Two ISO9141 Inerfaces (One

More information

NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor March 996 NS356P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,

More information

TLD2132-1EP. Features. Potential applications. Product validation. LITIX Basic+

TLD2132-1EP. Features. Potential applications. Product validation. LITIX Basic+ Feaures Single channel device wih inegraed and proeced oupu sage (curren source), opimized o drive LEDs as addiional low cos curren source High oupu curren (up o 240 ma) Very low curren consumpion in sleep

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision

More information

NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's

More information

NCN5150. Wired M-BUS Slave Transceiver

NCN5150. Wired M-BUS Slave Transceiver Wired M-BUS Slave Transceiver Descripion The is a single-chip inegraed slave ransceiver for use in wo-wire Meer Bus (M-BUS) slave devices and repeaers. The ransceiver provides all of he funcions needed

More information

Datasheet, Rev. 1.1, Nov BTS5012SDA. Smart High-Side Power Switch PROFET One Channel. Automotive Power

Datasheet, Rev. 1.1, Nov BTS5012SDA. Smart High-Side Power Switch PROFET One Channel. Automotive Power Daashee, Rev. 1.1, Nov. 2008 Smar HighSide Power Swich PROFET One Channel Auomoive Power Smar HighSide Power Swich Table of Conens Table of Conens 1 Overview.......................................................................

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor Philips Semiconducors Silicon Diffused Power Transisor Produc specificaion GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper

More information

SFH6345. High Speed Optocoupler, 1 Mbd, 15 kv/ms CMR, Transistor Output Features VISHAY. Vishay Semiconductors. Agency Approvals.

SFH6345. High Speed Optocoupler, 1 Mbd, 15 kv/ms CMR, Transistor Output Features VISHAY. Vishay Semiconductors. Agency Approvals. High Speed Opocoupler, Mbd, kv/ms CMR, Transisor Oupu Feaures Direc Replacemen for HCPL43 High Speed Opocoupler wihou Base Connecion Isolaion Tes Volage: 3 V RMS GaAlAs Emier Inegraed Deecor wih Phoo diode

More information

Datasheet, Rev. 1.0, Jan BTS TMB. Smart High-Side Power Switch PROFET One Channel. Automotive Power

Datasheet, Rev. 1.0, Jan BTS TMB. Smart High-Side Power Switch PROFET One Channel. Automotive Power Daashee, Rev. 1.0, Jan. 2008 BTS500801TMB Smar HighSide Power Swich PROFET One Channel Auomoive Power Smar HighSide Power Swich BTS500801TMB Table of Conens Table of Conens 1 Overview.......................................................................

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION High volage, high-speed swiching npn ransisors in a fully isolaed SOT99 envelope, primarily for use in horizonal deflecion circuis of colour elevision receivers. QUICK REFERENCE DATA

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved

More information

SOTiny Gate STX. Input. Descriptio n. Features. Block Diagram. Pin Configuration. Recommended Operating Conditions (1) Pin Description.

SOTiny Gate STX. Input. Descriptio n. Features. Block Diagram. Pin Configuration. Recommended Operating Conditions (1) Pin Description. PI74STXG08 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 - Feaures

More information

Converter - Brake - Inverter Module (CBI3)

Converter - Brake - Inverter Module (CBI3) MUBW 35-12 8 Converer - Brake - Inverer Module (CBI3) 21 22 D11 D13 D15 1 2 3 7 D7 1 15 T1 D1 T3 D3 T5 D5 18 2 17 5 19 4 D12 D14 D1 23 14 24 T7 11 1 T2 D2 T4 D4 T D 12 13 See ouline drawing for pin arrangemen

More information

High Speed Optocoupler, 1 MBd, Phtotdiode with Transistor Output

High Speed Optocoupler, 1 MBd, Phtotdiode with Transistor Output Vishay Semiconducors High Speed Opocoupler, FEATURES Isolaion es volages: 3 V RMS TTL compaible High bi raes:. Mbi/s i798 DESCRIPTION NC A C NC The N3 and N3 are opocouplers wih a GaAIAs infrared emiing

More information

TLD2331-3EP. Features. Potential applications. Product validation. LITIX Basic+

TLD2331-3EP. Features. Potential applications. Product validation. LITIX Basic+ Feaures Triple channel device wih inegraed and proeced oupu sages (curren sources), opimized o drive LEDs as addiional low cos curren source High oupu curren (up o 80 ma) per channel Very low curren consumpion

More information

Data Sheet, V1.1, February 2007 BTS 6142D. Smart High-Side Power Switch PROFET One Channel, 12 mω. Automotive Power. Never stop thinking.

Data Sheet, V1.1, February 2007 BTS 6142D. Smart High-Side Power Switch PROFET One Channel, 12 mω. Automotive Power. Never stop thinking. Daa Shee, V1.1, February 2007 Smar HighSide Power Swich PROFET One Channel, 12 mω Auomoive Power Never sop hinking. Smar HighSide Power Swich Table of Conens Page Produc Summary....................................................3

More information

p h a s e - o u t Dual Power MOSFET Module VMM X2 V DSS = 75 V I D25 = 1560 A R DS(on) = 0.38 mω Phaseleg Configuration

p h a s e - o u t Dual Power MOSFET Module VMM X2 V DSS = 75 V I D25 = 1560 A R DS(on) = 0.38 mω Phaseleg Configuration MM 5-75X Dual Power MOSFET Module S = 75 5 = 5 =. mω Phaseleg Configuraion Gae Conrol Pi 9 Power Screw Terminals 9 MOSFET T + T Symbol Condiio Maximum Raings S = 5 C o 5 C 75 ± 5 T C = 5 C j 5 T C = C

More information

Reading from Young & Freedman: For this topic, read sections 25.4 & 25.5, the introduction to chapter 26 and sections 26.1 to 26.2 & 26.4.

Reading from Young & Freedman: For this topic, read sections 25.4 & 25.5, the introduction to chapter 26 and sections 26.1 to 26.2 & 26.4. PHY1 Elecriciy Topic 7 (Lecures 1 & 11) Elecric Circuis n his opic, we will cover: 1) Elecromoive Force (EMF) ) Series and parallel resisor combinaions 3) Kirchhoff s rules for circuis 4) Time dependence

More information

XPT IGBT Module MIXA450PF1200TSF. Phase leg + free wheeling Diodes + NTC MIXA450PF1200TSF. Part number

XPT IGBT Module MIXA450PF1200TSF. Phase leg + free wheeling Diodes + NTC MIXA450PF1200TSF. Part number XPT IGBT Module CS 2x 12 I C25 1.8 C(sa) Phase leg + free wheeling Diodes + NTC Par number Backside: isolaed 5 2 1 8 7 9 3 4 /11 Feaures / dvanages: pplicaions: Package: SimBus F High level of inegraion

More information

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor January 997 NS3AN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -3 N-Channel logic level enhancemen mode power field effec ransisors are produced using

More information

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output. i179081

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output. i179081 High Speed Opocoupler, MBd, Phoodiode wih Transisor Oupu Feaures Isolaion Tes Volage: V RMS TTL Compaible High Bi Raes:. Mbi/s High Common-Mode Inerference Immuniy Bandwidh. MHz Open-Collecor Oupu Exernal

More information

AO V Complementary Enhancement Mode Field Effect Transistor

AO V Complementary Enhancement Mode Field Effect Transistor AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used

More information

Analogue amplifier card

Analogue amplifier card Analogue amplifier card RE 30110/06.05 replaces: 10.04 1/10 Type VT-VSPA-1-X/ H/A/D 6641/00 Table of conens Conens Page Feaures 1 Ordering deails, accessories Funcion 3 Block circui diagram and connecion

More information

Top View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.

Top View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0. V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion

More information

High Voltage Standard Rectifier Module

High Voltage Standard Rectifier Module UB35-22NO High olage Sandard ecifier Module M = 22 I = 5 D 3~ ecifier I SM = Brake hopper ES = 7 I = 3 25 E(sa) =.9 3~ ecifier Bridge + Brake Uni + NT Par number UB35-22NO Backside: isolaed 24+25 29 3

More information

Application Note AN Software release of SemiSel version 3.1. New semiconductor available. Temperature ripple at low inverter output frequencies

Application Note AN Software release of SemiSel version 3.1. New semiconductor available. Temperature ripple at low inverter output frequencies Applicaion Noe AN-8004 Revision: Issue Dae: Prepared by: 00 2008-05-21 Dr. Arend Winrich Ke y Words: SemiSel, Semiconducor Selecion, Loss Calculaion Sofware release of SemiSel version 3.1 New semiconducor

More information

MC74HC595A. 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs. High Performance Silicon Gate CMOS

MC74HC595A. 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs. High Performance Silicon Gate CMOS 8-Bi Serial-Inpu/Serial or Parallel-Oupu Shif Regiser wih Lached 3-Sae Oupus High Performance Silicon Gae COS The C74HC55A consiss of an 8 bi shif regiser and an 8 bi D ype lach wih hree sae parallel oupus.

More information

CoolMOS 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode

CoolMOS 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode IXKF 4N6SCD1 CoolMOS 1) Power MOSFET wih Series Schoky Diode and Ulra Fas niparallel Diode in High olage ISOPLUS i4-pc S = 6 2 = 41 yp. = 6 mω rr = 7 ISOPLUS i4-pc Preliminary daa 1 D S T D F 1 2 E72873

More information

High Speed Optocoupler, 1 MBd, Transistor Output. i179081

High Speed Optocoupler, 1 MBd, Transistor Output. i179081 High Speed Opocoupler, MBd, Transisor Oupu Feaures Isolaion Tes Volage: V RMS TTL Compaible High Bi Raes:. Mbi/s High Common-mode Inerference Immuniy Bandwidh. MHz Open-collecor Oupu Exernal Base Wiring

More information

TrenchMV TM Power MOSFET

TrenchMV TM Power MOSFET Preliminary Technical Informaion TrenchMV TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed V DSS = V I D25 = A R DS(on) 7. mω TO-263 (IXTA) Symbol Tes Condiions Maximum Raings V DSS = 25 C o 175

More information

Converter - Brake - Inverter Module (CBI2)

Converter - Brake - Inverter Module (CBI2) Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D1 1 2 3 7 D7 16 1 T1 D1 T3 D3 T D 18 2 6 17 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 1 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase

More information

p h a s e - o u t Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VVZB 135 = 1600 V = 135 A Recommended replacement:

p h a s e - o u t Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VVZB 135 = 1600 V = 135 A Recommended replacement: VVZB 5 Three Phase Recifier Bridge wih IGBT and Fas Recovery Diode for Braking Sysem V RRM I dvm = 6 V = 5 V RRM Type + 6 5 4 NTC 9 + V 6 VVZB 5-6 NO 6+7 4+5 + Symbol Condiions Maximum Raings V RRM 6 V

More information

NDT014 N-Channel Enhancement Mode Field Effect Transistor

NDT014 N-Channel Enhancement Mode Field Effect Transistor Sepember 996 NT4 N-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures Power SOT N-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high

More information

Disribued by: www.jameco.com -800-83-44 The conen and copyrighs of he aached maerial are he propery of is owner. Preferred Device Schoky Barrier Diodes These Schoky barrier diodes are designed for high

More information