Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ

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Baldric Day
6 years ago
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1 Smar HighSide Power Swich for ndusrial Applicaions Channel: x mω Feaures Shor circui proecion Curren limiaion Overload proecion Overvolage proecion (including load dump) Undervolage shudown wih auoresar and hyseresis Swiching inducive loads Produc Summary Overvolage proecion Operaing volage Onsae resisance Operaing emperaure (AZ) (on) R ON T a mω C Clamp of negaive volage a oupu wih inducive loads CMOS compaible inpu Thermal shudown wih resar ESD Proecion Loss of and loss of proecion ery low sandby curren Reverse baery proecion wih exernal resisor mproved elecromagneic compaibiliy (EMC) PGSOT3 Applicaion All ypes of resisive, inducive and capaciive loads µc compaible power swich for and 4 DC indusrial applicaions Replaces elecromechanical relays and discree circuis General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu, monolihically inegraed in Smar SPMOS echnology. Providing embedded proecive funcions. Page 639

2 Block Diagram olage source Overvolage proecion Curren limi Gae proecion + 4 Logic 3 R in ESD olage sensor Logic Charge pump Level shifer Recifier Limi for unclamped ind. loads Temperaure sensor Load Signal miniprofet Load Pin Symbol 3 4 Funcion Oupu o he load Logic ground npu, acivaes he power swich in case of logic high signal Posiive power supply volage Page 639

3 Maximum Raings Parameer a = 5 C, unless oherwise specified Symbol alue Uni Supply volage,3 )...48 Coninuous inpu volage )... Load curren (Shor circui curren, see page 5) L self limied A Curren hrough inpu pin (DC) ±5 ma Reverse curren hrough pin 3).5 A Juncion emperaure inernal limied C Operaing emperaure T a C Sorage emperaure T sg C Power dissipaion 4) P o.4 W nducive load swichoff energy dissipaion 4)5) single pulse = 5 C, L =.5 A Load dump proecion 5) LoadDump 6)= A + S R =Ω, d =4ms, = low or high, A =3,5 R L = 47 Ω Elecrosaic discharge volage (Human Body Model) according o ANS EOS/ESD S ESD STM npu pin All oher pins E AS.7 J Loaddump ESD 83 ± ±5 k defined by Po A >, he inpu curren is no allowed o exceed ±5 ma. 3 defined by Po 4 Device on 5mm*5mm*.5mm epoxy PCB FR4 wih 6 cm (one layer, 7µm hick) copper area for connecion. PCB is verical wihou blown air. 5 no subjec o producion es, specified by design 6 Loaddump is seup wihou he DUT conneced o he generaor per SO 7637 and D Supply volages higher han (AZ) require an exernal curren limi for he pin, e.g. wih a 5Ω resisor in connecion. A resisor for he proecion of he inpu is inegraed. Page 3 639

4 Elecrical Characerisics Parameer Symbol alues Uni a = C, = unless oherwise specified min. yp. max. Thermal Characerisics Thermal min. fooprin R h(ja) 5 K/W Thermal 6 cm cooling area ) R h(ja) 7 Thermal resisance, juncion soldering poin R hjs 7 K/W Load Swiching Capabiliies and Characerisics Onsae resisance = 5 C, L =.5 A = 5 C R ON Nominal load curren ) L(nom).7 A Device on PCB ) Turnon ime o 9% R L = 47 Ω, = o Turnoff ime o % R L = 47 Ω, = o Slew rae on o 3%, R L = 47 Ω, = 5 Slew rae off 7 o 4%, R L = 47 Ω, = 5 on 5 off 75 5 d/d on d/d off mω µs /µs Device on 5mm*5mm*.5mm epoxy PCB FR4 wih 6 cm (one layer, 7µm hick) copper area for connecion. PCB is verical wihou blown air. Nominal load curren is limied by he curren limiaion ( see page 5 ) Page 4 639

5 Elecrical Characerisics Parameer Symbol alues Uni a = C, = unless oherwise specified min. yp. max. Operaing Parameers Operaing volage (on) 45 Undervolage shudown (under) 7.5 Undervolage resar (u rs) Undervolage hyseresis (under).5 (under) = (u rs) (under) Sandby curren = C,, = 5 C ) (off) Operaing curren.6 ma Leakage oupu curren (included in (off) ) L(off) 3.5 µa, Proecion Funcions ) niial peak shor circui curren limi = 4 C, =, m = 5 µs = 5 C = 5 C Repeiive shor circui curren limi = (see iming diagrams) Oupu clamp (inducive load swich off) a = ON(CL), = 4 ma Overvolage proecion 3) = 4 ma L(SCp) L(SCr). ON(CL) 6 68 (AZ) 47 Thermal overload rip emperaure 4) 35 C Thermal hyseresis K higher curren due emperaure sensor negraed proecion funcions are designed o preven C desrucion under faul condiions described in he daa shee. Faul condiions are considered as "ouside" normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 3 see also ON(CL) in circui diagram 4 higher operaing emperaure a normal funcion available µa A Page 5 639

6 Elecrical Characerisics Parameer Symbol alues Uni a = C, = unless oherwise specified min. yp. max. npu Coninuous inpu volage ) ) npu urnon hreshold volage (T+) 3. npu urnoff hreshold volage (T).8 npu hreshold hyseresis (T). Off sae inpu curren (off) µa,8 On sae inpu curren (on) npu delay ime a swich on d(on) 5 34 µs npu resisance (see page 8) R kω Reverse Baery Reverse baery volage 3)) R = Ω R = 5 Ω Coninuous reverse drain curren ) = 5 C Drainsource diode volage ( > ) F = A.3 45 S A ON.6. A >, he inpu curren is no allowed o exceed ±5 ma. no subjec o producion es, guaraned by design 3 defined by Po Page 6 639

7 EMCCharacerisics All EMCCharacerisics are based on limied number of sampels and no par of producion es. Tes Condiions: f no oher specified he es circuiry is he minimal funcional configuraion wihou any exernal componens for proecion or filering. Supply volage: = 3.5 Temperaure: T a = 3 ±5 C ; Load: R L = Ω Operaion mode: PWM Frequency: Hz / Duy Cycle: 5% DC On/Off DUTSpecific.: R Fas elecrical ransiens Acc. SO 7637 Tes Pulse Tes Level Tes Resuls Pulse Cycle Time and On Off Generaor mpedance C C 5ms ; Ω + C C 5ms ; Ω 3a C C ms ; 5Ω 3b + C C ms ; 5Ω 4 ) 7 C C,Ω 5 75 E (7) E (7) 4ms ; Ω The es pulses are applied a Definiion of funcional saus Class C E Conen All funcions of he device are performed as designed afer exposure o disurbance. One or more funcion of a device does no perform as designed afer exposure and can no be reurned o proper operaion wihou repairing or replacing he device. The value afer he characer shows he limi. Tes circui: Pulse Ba. PROFET R R L Supply volage = insead of 3,5. Page 7 639

8 Conduced Emission Acc. EC (Ω / 5Ω mehod) Typ. Pin Emission a DCOn wih 5Ωmaching nework ohm Class6 5ohm Class BB, noise floor BB, ON dbµ Ω / 8H 5Ω / 3N, f / M H z Typ. Pin Emission a PWMMode wih 5Ωmaching nework ohm Class6 5ohm Class BB, noise floor BB, PW M dbµ Ω / 8H 5Ω / 3N, f / M H z Tes circui: 5µH 5ΩNework PROFET 5µH R R For defined decoupling and high reproducibiliy a defined choke (5µH a MHz) is insered beween supply and pin. Page 8 639

9 Conduced Suscepibiliy Acc. 47A/658/CD EC 634 (Direc Power njecion) Direc Power njecion: Failure crieria: Forward Power CW Ampliude and frequency deviaion max. % a Ou Typ. Pin Suscepibiliy a DCOn/Off dbm 5 5 Lim i BB, ON BB, OFF D e vice : B T S 4 4 L oa d : 47 O hm s O M o de : O N / O F F / P W M C o up lin g P oin : B B M on io rin g : O u M od u la io n: C W f / M H z Typ. Pin Suscepibiliy a PWMMode dbm 5 5 Lim i BB, PW M D e vice : B T S 4 4 L o ad : 4 7 O h m s O M o d e: O N / O F F / P W M C o u plin g P o in : B B M o n iorin g : O u M o d ula io n : C W f / M H z Tes circui: 5µH HF 5Ω PROFET 5µH 5Ω 6,8nF R R L 6,8nF For defined decoupling and high reproducibiliy he same choke and he same 5Ω maching nework as for he emission measuremen is used. Page 9 639

10 Terms nducive and overvolage oupu clamp + Z PROFET L ON ON R npu circui (ESD proecion) ON clamped o 63 min. Overvolage proecion of logic par R + Z Logic The use of ESD zener diodes as volage clamp a DC condiions is no recommended R opional Signal Reverse baery proecion Z = (AZ) =47 min., R =3 kω yp., R =5Ω R Logic Power n v e rse Diode Signal R opional R L Power R =5Ω, R =3kΩ yp., Temperaure proecion is no acive during inverse curren Page 639

11 disconnec nducive Load swichoff energy dissipaion E E AS PROFET E Load = PROFET L Z L{ E L E R R L disconnec wih pull up PROFET Energy sored in load inducance: E L = ½ * L * L While demagneizing load inducance, he enérgy dissipaed in PROFET is E AS = E + E L E R = ON(CL) * i L () d, wih an approximae soluion for R L > Ω: E AS L * L L * R L = *( + CL + * R ( ) )*ln( L CL ) ( ) disconnec wih charged inducive load high PROFET Page 639

12 Typ. ransien hermal impedance Z hja =f( p 6cm heasink area Parameer: D= p /T K/W Typ. ransien hermal impedance Z hja =f( p min. fooprin Parameer: D= p /T K/W ZhJA ZhJA D=,5 D=, D=, D=,5 D=, D=, D= D=,5 D=, D=, D=,5 D=, D=, D= Typ. onsae resisance R ON = f( ) ; = 5 ; in = high s p Typ. onsae resisance R ON = f( ); L =.5A ; in = high s p 3 3 mω mω 5 C RON RON C 4 C C Page 639

13 Typ. urn on ime Typ. urn off ime on = f( ); R L = 47Ω off = f( ); R L = 47Ω µs 5 µs on 6 3 off C 4 Typ. slew rae on d/d on = f( ) ; R L = 47 Ω C 4 Typ. slew rae off d/d off = f( ); R L = 47 Ω /µs /µs 4 d don.6.4 d doff C C 4 Page 3 639

14 Typ. iniial peak shor circui curren limi L(SCp) = f( ) ; = ; m = 5µs Typ. iniial shor circui shudown ime off(sc) = f(,sar ) ; = A.6 ms 3 L(SCp).4. off(sc) C C 4 Typ. iniial peak shor circui curren limi L(SCp) = f( ); m = 5µs Typ. inpu curren (on/off) = f( ); = 5 ; = low/high low,8; high = 5 6 A 4 C µa.5 5 C L(SCp).5 4 on 5 C 3 off C 4 Page 4 639

15 Typ. inpu curren Typ. inpu hreshold volage = f( ); =5 (h) = f( ) ; = C 3 on µa 5 C off 4 5 C (h) Typ. inpu hreshold volage (h) = f( ) ; = 5 C C 4 Typ. sandby curren (off) = f( ) ; = 3 ;, 3 µa on 8 (h) off (off) C 4 Page 5 639

16 Maximum allowable inducive swichoff energy, single pulse E AS = f( L ); sar = 5 C.5 J Typ. leakage curren L(off) = f( ) ; = 3 ;, µa 4 3 EAS.5 L(off) A.4 L C 4 Typ. inpu delay ime a swich on d(on) = f( ) 4 µs d(on) Page 6 639

17 Timing diagrams Figure a: urn on: Figure b: Swiching a lamp L L d(on) Figure a: Swiching a resisive load, urnon/off ime and slew rae definiion Figure c: Swiching an inducive load 9% on d/doff % d/don off L L Page 7 639

18 Figure 3a: Turn on ino shor circui, shu down by overemperaure, resar by cooling Figure 3b: Shor circui in onsae shu down by overemperaure, resar by cooling Oupu shor o normal operaion Oupu shor o L L(SCp) L(SCr) L L(SCr) Heaing up of he chip may require several milliseconds, depending on exernal condiions. Figure 4: Overemperaure: Rese if < Figure 5: Undervolage shudown and resar,5 ou T J d(on) d(on) Page 8 639

19 Package and ordering code all dimensions in mm Sales code Ordering code, sandard ( pcs.) TS 44N SP9536 A 6.5 ±. 3 ±.. max.6 ±. B 4 +. acc. o D ±.3 5 max 3.5±. 3 min.5.7 ± ±.4.5 M A.5 M B GPS556 Published by nfineon Technologies AG, S.MarinSrasse 53, D8669 München nfineon Technologies AG All Righs Reserved. Aenion please! The informaion herein is given o describe cerain componens and shall no be considered as a guaranee of characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of noninfringemen, regarding circuis, descripions and chars saed herein. nfineon Technologies is an approved CECC manufacurer. nformaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares nfineon Technologies Office in Germany or our nfineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares nfineon Technologies Office. nfineon Technologies Componens may only be used in lifesuppor devices or sysems wih he express wrien approval of nfineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. f hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. Page 9 639

Smart Power High-Side-Switch

Smart Power High-Side-Switch Smar Power High-Side-Swich Feaures Overload proecion Produc Summary Overvolage proecion bb(az) 4 Curren limiaion Operaing volage bb(on) 5...34 Shor circui proecion On-sae resisance R ON 35 mω Thermal shudown