Smart Highside Power Switch
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- George Barrett
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1 Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor-circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion 1) Undervolage and overvolage shudown wih auo-resar and hyseresis Open drain diagnosic oupu Open load deecion in ON-sae CMOS compaible inpu oss of ground and loss of bb proecion 2) Elecrosaic discharge (ESD) proecion Green Produc (RoS complian) AEC qualified Produc Summary Overvolage proecion bb(az) 63 Operaing volage bb(on) On-sae resisance RON 18 mω oad curren (SO) (SO) 21 A Curren limiaion (SCr) 70 A PG-TO Sandard PG-TO SMD Applicaion µc compaible power swich wih diagnosic feedback for 12 and 24 DC grounded loads All ypes of resisive, inducive and capacive loads Replaces elecromechanical relays and discree circuis General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, inegraed in Smar SPMOS chip on chip echnology. Providing embedded proecive funcions. olage source Overvolage proecion Curren limi Gae proecion R bb + bb 3 ogic 2 ESD olage sensor ogic Charge pump evel shifer Recifier imi for unclamped ind. loads Open load deecion Temperaure sensor oad 4 1 Signal Shor circui deecion PROFET oad 1) No exernal componens required, reverse load curren limied by conneced load. 2) Addiional exernal diode required for charged inducive loads Daa Shee 1 of Jan-26
2 Pin Symbol Funcion 1 ogic ground 2 npu, acivaes he power swich in case of logical high signal 3 bb Posiive power supply volage, he ab is shored o his pin 4 Diagnosic feedback, low on failure (oad, ) Oupu o he load Maximum Raings a Tj = 2 C unless oherwise specified Parameer Symbol alues Uni Supply volage (overvolage proecion see page 3) bb 63 oad dump proecion oaddump = U A + s, U A = 13. 3) oad dump 80 R = 2 Ω, R = 1.1 Ω, d = 200 ms, = low or high oad curren (Shor-circui curren, see page 4) self-limied A Operaing emperaure range T j C Sorage emperaure range T sg Power dissipaion (DC) P o 167 W nducive load swich-off energy dissipaion, single pulse T j =10 C: E AS 2.1 J Elecrosaic discharge capabiliy (ESD) ESD 2.0 k (uman Body Model) npu volage (DC) Curren hrough inpu pin (DC) Curren hrough saus pin (DC) see inernal circui diagrams page 6... ±.0 ±.0 ma Thermal resisance chip - case: R hjc 0.7 juncion - ambien (free air): R hja 7 SMD version, device on pcb 4) : yp. 33 K/W 3) oad dump is seup wihou he DUT conneced o he generaor per SO and D ) Device on 0mm*0mm*1.mm epoxy PCB FR4 wih 6cm 2 (one layer, 70µm hick) copper area for bb connecion. PCB is verical wihou blown air. Daa Shee Jan-26
3 Elecrical Characerisics Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 12 unless oherwise specified min yp max oad Swiching Capabiliies and Characerisics On-sae resisance (pin 3 o ) = A T j =2 C: T j =10 C: Nominal load curren (pin 3 o ) SO Proposal: ON = 0., T C = 8 C Oupu curren (pin ) while disconneced or pulled up, = 0, see diagram page 7, Tj = C Turn-on ime o 90% : Turn-off ime o 10% : R = 12 Ω, Tj = C Slew rae on 10 o 30%, R = 12 Ω, Tj = C Slew rae off 70 o 40%, R = 12 Ω, Tj = C R ON 1 18 mω 28 3 (SO) A (high) 1 ma on off µs d /d on /µs -d/d off 0.4 /µs Operaing Parameers Operaing volage ) Tj = C: bb(on) Undervolage shudown Tj = C: bb(under) Undervolage resar Tj = C: bb(u rs) 4. Undervolage resar of charge pump bb(ucp) see diagram page 12 Tj = C: Undervolage hyseresis bb(under) 0.2 bb(under) = bb(u rs) - bb(under) Overvolage shudown Tj = C: bb(over) 42 2 Overvolage resar Tj = C: bb(o rs) 42 Overvolage hyseresis Tj = C: bb(over) 0.2 Overvolage proecion 6) Tj =-40 C: bb(az) 60 bb =40 ma Tj = C: Sandby curren (pin 3) T j = C: bb(off) 12 2 µa =0 T j =10 C: eakage oupu curren (included in bb(off) ) (off) 6 µa =0 Operaing curren (Pin 1) 7), = 1.1 ma ) A supply volage increase up o bb = 6. yp wihou charge pump, bb - 2 6) see also ON(C) in able of proecion funcions and circui diagram page 7. Measured wihou load. 7) Add, if > 0, add, if >. Daa Shee Jan-26
4 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 12 unless oherwise specified min yp max Proecion Funcions 8) niial peak shor circui curren limi (pin 3 o ) 9), ( max 400 µs if ON > ON(SC) ) Tj =-40 C: Tj =2 C: Tj =+10 C: Repeiive shor circui curren limi (SCp) (SCr) A T j = T j (see iming diagrams, page 10) A Shor circui shudown delay afer inpu pos. slope ON > ON(SC), T j = C: d(sc) µs min value valid only, if inpu "low" ime exceeds 30 µs Oupu clamp (inducive load swich off) a = bb - ON(C), = 30 ma ON(C) 8 Shor circui shudown deecion volage (pin 3 o ) ON(SC) 8.3 Thermal overload rip emperaure T j 10 C Thermal hyseresis T j 10 K nducive load swich-off energy dissipaion 10), T j Sar = 10 C, single pulse bb = 12 : bb = 24 : E AS E oad12 E oad Reverse baery (pin 3 o 1) 11) - bb 32 negraed resisor in bb line R bb 120 Ω J Diagnosic Characerisics Open load deecion curren (on-condiion) T j =-40 C: T j =2..10 C: (O) ma 8) negraed proecion funcions are designed o preven C desrucion under faul condiions described in he daa shee. Faul condiions are considered as "ouside" normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 9) Shor circui curren limi for max. duraion of d(sc) max =400 µs, prior o shudown 10) While demagneizing load inducance, dissipaed energy in PROFET is E AS = ON(C) * i () d, approx. E AS = 1 / 2 * * 2 * ( ON(C) ), see diagram page 8. ON(C) - bb 11) Reverse load curren (hrough inrinsic drain-source diode) is normally limied by he conneced load. Reverse curren of 0.3 A a bb = -32 hrough he logic heas up he device. Time allowed under hese condiion is dependen on he size of he heasink. Reverse can be reduced by an addiional exernal -resisor (10 Ω). npu and Saus currens have o be limied (see max. raings page 2 and circui page 7). Daa Shee Jan-26
5 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 12 unless oherwise specified min yp max npu and Saus Feedback 12) npu urn-on hreshold volage (T+) T j = C: npu urn-off hreshold volage (T-) 1.0 T j = C: npu hreshold hyseresis (T) 0. Off sae inpu curren (pin 2), = 0.4 (off) 1 30 µa On sae inpu curren (pin 2), = 3. (on) µa Saus invalid afer posiive inpu slope (shor circui) Tj= C: Saus invalid afer posiive inpu slope (open load) Tj= C: Saus oupu (open drain) Zener limi volage Tj = C, = +1.6 ma: low volage Tj = C, = +1.6 ma: d( SC) µs d() µs (high) (low) ) f a ground resisor R is used, add he volage drop across his resisor. Daa Shee 2010-Jan-26
6 Truh Table npu- Oupu Saus Normal operaion Open load Shor circui o Shor circui o bb Overemperaure Undervolage Overvolage = "ow" evel = "igh" evel level level 442 E2 13) ( 14) ) Terms npu circui (ESD proecion) bb 2 4 bb 3 bb PROFET 1 R ON R ESD- ZD1 ZD2 ZD1 6.1 yp., ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o 1 ). 13) Power Transisor off, high impedance 14) ow resisance shor bb o oupu may be deeced by no-load-deecion Daa Shee Jan-26
7 Saus oupu PROFET BTS 442 E2 Overvol. and reverse ba. proecion + + bb R (ON) R Z R bb ESD- ZD ESD-Zener diode: 6.1 yp., max ma; R (ON) < 20 Ω a 1.6 ma, ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o 1 ). R ogic R Signal PROFET R bb = 120 Ω yp., Z +R bb *40 ma = 67 yp., add R, R, R for exended proecion Shor Circui deecion Faul Condiion: ON > 8.3 yp.; high + bb Open-load deecion ON-sae diagnosic condiion: ON < R ON * (O) ; high + bb ON ogic uni Shor circui deecion ogic uni ON Open load deecion ON nducive and overvolage oupu clamp + bb Z ON disconnec 2 3 bb ON clamped o 8 yp. 4 PROFET 1 bb Any kind of load. n case of npu=high is - (T+). Due o >0, no = low signal available. Daa Shee Jan-26
8 disconnec wih pull up 3 bb 2 PROFET 4 1 high 2 4 PROFET BTS 442 E2 3 bb PROFET 1 bb bb Any kind of load. f > - (T+) device says off Due o >0, no = low signal available. bb disconnec wih charged inducive load high bb PROFET 1 nducive oad swich-off energy dissipaion E bb E AS bb PROFET = E oad E E R bb Energy dissipaed in PROFET E AS = E bb + E - E R. E oad < E, E = 1 /2 * * 2 Daa Shee Jan-26
9 Opions Overview PROFET BTS 442 E2 all versions: igh-side swich, npu proecion, ESD proecion, load dump and reverse baery proecion, proecion agains loss of ground Type BTS 442E2 ogic version E Overemperaure proecion Tj >10 C, lach funcion 1)16) Tj >10 C, wih auo-resar on cooling Shor-circui o proecion swiches off when ON >8.3 yp. 1) (when firs urned on afer approx. 200 µs) Open load deecion in OFF-sae wih sensing curren 30 µa yp. in ON-sae wih sensing volage drop across power ransisor Undervolage shudown wih auo resar Overvolage shudown wih auo resar Saus feedback for overemperaure shor circui o shor o bb open load undervolage overvolage Saus oupu ype CMOS Open drain Oupu negaive volage ransien limi (fas inducive load swich off) o bb - ON(C) oad curren limi high level (can handle loads wih high inrush currens) medium level low level (beer proecion of applicaion) - 17) - - 1) ach excep when bb - < ON(SC) afer shudown. n mos cases = 0 afer shudown ( 0 only if forced exernally). So he device remains lached unless bb < ON(SC) (see page 4). No lach beween urn on and d(sc). 16) Wih lach funcion. Reseed by a) npu low, b) Undervolage, c) Overvolage 17) ow resisance shor bb o oupu may be deeced by no-load-deecion Daa Shee Jan-26
10 Timing diagrams Figure 1a: bb urn on: Figure 2b: Swiching an inducive load bb d(bb ) d() *) A open drain A in case of oo early =high he device may no urn on (curve A) d(bb ) approx. 10 µs Figure 2a: Swiching a lamp, (O) *) if he ime consan of load is oo large, open-load-saus may occur Figure 3a: Turn on ino shor circui, d(sc) d(sc) approx. 200µs if bb - > 8.3 yp. Daa Shee Jan-26
11 Figure 3b: Turn on ino overload, Figure 4a: Overemperaure: Rese if T j <T j (SCp) (SCr) T J eaing up may require several milliseconds, bb - < 8.3 yp. Figure 3c: Shor circui while on: Figure a: Open load: deecion in ON-sae, urn on/off o open load d() **) open **) curren peak approx. 20 µs Daa Shee Jan-26
12 Figure b: Open load: deecion in ON-sae, open load occurs in on-sae PROFET BTS 442 E2 Figure 6b: Undervolage resar of charge pump ON [] on ON(C) off d( O1) d( O2) off bb(over) bb(u rs) bb(o rs) normal open normal bb(under) bb(u cp) on bb d( O1) = bd µs yp., d( O2) = bd µs yp charge pump sars a bb(ucp) =6. yp. bb [] Figure 6a: Undervolage: Figure 7a: Overvolage: bb bb ON(C) bb(over) bb(o rs) bb(under) bb(u cp) bb(u rs) open drain Daa Shee Jan-26
13 Package and Ordering Code All dimensions in mm PG-TO BTS 442 E2 SMD PG-TO BTS442E2 E3062A 17± ±0.3 1) x ± ± ) ± ± A 10.2 ±0.3 x 0.8 ± M A C 1) Typical All meal surfaces in plaed, excep area of cu ± ± C ± ±0.2 ± ± ±0.4 (1) ±0.2 ±0.3 1 x 0.8 ± ± ) 1) 7. A 1.3 ± x M A B 4.7 ± ±0.1 B ± MA. 1) Typical Meal surface min. = 7.2, Y = 6.9 All meal surfaces in plaed, excep area of cu ± B GPT09062 Green Produc To mee he world-wide cusomer requiremens for environmenally friendly producs and o be complian wih governmen regulaions he device is available as a green produc. Green producs are RoS-Complian (i.e Pbfree finish on leads and suiable for Pb-free soldering according o PC/JEDEC J-D-020). Revision isory ersion Dae Changes Rev Page 13: Package drawing for PG-TO correced. Rev RoS-complian version of BTS442E2 Removal of sraigh lead package varian E3043 Page 1, page 13: RoS compliance saemen and Green produc feaure added Page 1, page 13: Change o RoS complian packages; PG-TO for sandard (saggered) varian; PG-TO for E3062A varian. Page 2: Thermal resisance juncion o ambien for SMD version se o ypically 33K/W. Page 2: Pin marking removed. Page 6, 9: Disconinued varians removed from ruh able & opions overview. egal disclaimer updaed Daa Shee Jan-26
14 Published by nfineon Technologies AG Munich, Germany 2010 nfineon Technologies AG All Righs Reserved. egal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, nfineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of non-infringemen of inellecual propery righs of any hird pary. nformaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares nfineon Technologies Office ( Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares nfineon Technologies Office. nfineon Technologies componens may be used in life-suppor devices or sysems only wih he express wrien approval of nfineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem or o affec he safey or effeciveness of ha device or sysem. ife suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. f hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. Daa Shee Jan-26
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