ResonantSoft-SwitchingSeries ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching

Transcription

1 ResonanSofSwichingSeries ReverseconducingIGBTwihmonolihicbodyDiodeforsofswiching IHWN12E1 Daashee IndusrialPowerConrol

2 IHWN12E1 ResonanSofSwichingSeries ReverseconducingIGBTwihmonolihicbodydiode Feaures: Powerfulmonolihicbodydiodewihlowforwardvolage designedforsofcommuaiononly TRENCHSTOP TM echnologyapplicaionsoffers: veryighparameerdisribuion highruggedness,emperauresablebehavior lowvcesa easyparallelswichingcapabiliydueoposiive emperaurecoefficieninvcesa LowEMI QualifiedaccordingoJEDECforargeapplicaions Pbfreeleadplaing;RoHScomplian CompleeproducspecrumandPSpiceModels: hp:// G C E Applicaions: Inducivecooking Invererizedmicrowaveovens Resonanconverers Sofswichingapplicaions G C E KeyPerformanceandPackageParameers Type VCE IC VCEsa,Tvj= C Tvjmax Marking Package IHWN12E1 12V A 1.5V 1 C HME1 PGTO Rev.2.1,216729

3 IHWN12E1 ResonanSofSwichingSeries TableofConens Descripion Table of Conens Maximum Raings Thermal Resisance Elecrical Characerisics Elecrical Characerisics Diagrams Package Drawing Tesing Condiions Revision Hisory Disclaimer Rev.2.1,216729

4 IHWN12E1 ResonanSofSwichingSeries MaximumRaings Foropimumlifeimeandreliabiliy,Infineonrecommendsoperaingcondiionshadonoexceed8%ofhemaximumraingssaedinhisdaashee. Parameer Symbol Value Uni Collecoremiervolage,Tvj C VCE 12 V DCcollecorcurren,limiedbyTvjmax TC= C TC=1 C IC.. Pulsedcollecorcurren,plimiedbyTvjmax ICpuls. A TurnoffsafeoperaingareaVCE 12V,Tvj 1 C 1). A Diodeforwardcurren,limiedbyTvjmax TC= C TC=1 C IF.. Diodepulsedcurren,plimiedbyTvjmax IFpuls. A Gaeemier volage TransienGaeemiervolage(p 1µs,D<.1) PowerdissipaionTC= C PowerdissipaionTC=1 C VGE Po ±2 ± Operaing juncion emperaure Tvj C Sorage emperaure Tsg C Soldering emperaure, wave soldering 1.6mm (.63in.) from case for 1s 26 Mouning orque, M3 screw Maximum of mouning processes: 3 A A V W C M.6 Nm ThermalResisance Parameer Symbol Condiions Value min. yp. max. Uni RhCharacerisics IGBT hermal resisance, juncion case Diode hermal resisance, juncion case Thermal resisance juncion ambien Rh(jc).54 K/W Rh(jc).54 K/W Rh(ja) 4 K/W 1) dv/d < 1kV/µs 4 Rev.2.1,216729

5 IHWN12E1 ResonanSofSwichingSeries ElecricalCharacerisic,aTvj= C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Collecoremier breakdown volage V(BR)CES VGE=V,IC=.mA 12 V Collecoremier sauraion volage Diode forward volage VCEsa VF VGE=15.V,IC=.A Tvj= C Tvj=1 C Tvj=1 C VGE=V,IF=.A Tvj= C Tvj=1 C Tvj=1 C Gaeemier hreshold volage VGE(h) IC=.8mA,VCE=VGE V Zero gae volage collecor curren ICES VCE=12V,VGE=V Tvj= C Tvj=1 C Gaeemier leakage curren IGES VCE=V,VGE=2V 1 na Transconducance gfs VCE=2V,IC=.A 23. S Inegraed gae resisor rg 8.5 Ω V V µa ElecricalCharacerisic,aTvj= C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic Inpu capaciance Cies 13 Oupu capaciance Coes VCE=V,VGE=V,f=1MHz 37 Reverse ransfer capaciance Cres 31 Gae charge Inernal emier inducance measured 5mm (.197 in.) from case QG VCC=96V,IC=.A, VGE=15V pf 147. nc LE 13. nh SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. IGBTCharacerisic,aTvj= C Turnoff delay ime d(off) Tvj= C, 229 ns Fall ime VCC=15V,IC=.A, f 12 ns VGE=./18.V, RG(off)=1.2Ω Energy losses include ail according Figure B. (Tes circui FigureE,Cr=3nF). Turnoff energy, sof swiching Eoff dv/d=83.v/µs.8 mj 5 Rev.2.1,216729

6 IHWN12E1 ResonanSofSwichingSeries Turnoff delay ime d(off) Tvj= C, 249 ns Fall ime VCC=21V,IC=.A, f 8 ns VGE=./18.V, RG(off)=1.2Ω Energy losses include ail according Figure B. (Tes circui FigureE,Cr=3nF). Turnoff energy, sof swiching Eoff dv/d=166.v/µs.24 mj SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. IGBTCharacerisic,aTvj=1 C Turnoff delay ime d(off) Tvj=1 C, 24 ns Fall ime VCC=15V,IC=.A, f 1764 ns VGE=./18.V, RG(off)=1.2Ω Energy losses include ail according Figure B. (Tes circui FigureE,Cr=3nF). Turnoff energy, sof swiching Eoff dv/d=83.v/µs.19 mj Turnoff delay ime d(off) Tvj=1 C, 3 ns Fall ime VCC=21V,IC=.A, f 1424 ns VGE=./18.V, RG(off)=1.2Ω Energy losses include ail according Figure B. (Tes circui FigureE,Cr=3nF). Turnoff energy, sof swiching Eoff dv/d=166.v/µs.52 mj 6 Rev.2.1,216729

7 IHWN12E1 ResonanSofSwichingSeries Po,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] TC,CASETEMPERATURE[ C] Figure 1. Powerdissipaionasafuncionofcase emperaure (Tvj 1 C) TC,CASETEMPERATURE[ C] Figure 2. Collecorcurrenasafuncionofcase emperaure (VGE 15V,Tvj 1 C) VGE=2V VGE=2V 17V 17V 15V 15V IC,COLLECTORCURRENT[A] 13V 11V 9V 7V 5V IC,COLLECTORCURRENT[A] 13V 11V 9V 7V 5V VCE,COLLECTOREMITTERVOLTAGE[V] Figure 3. Typicaloupucharacerisic (Tvj= C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloupucharacerisic (Tvj=1 C) 7 Rev.2.1,216729

8 IHWN12E1 ResonanSofSwichingSeries IC,COLLECTORCURRENT[A] Tvj= C Tvj=1 C VCEsa,COLLECTOREMITTERSATURATION[V] IC=12.5A IC=A IC=A VGE,GATEEMITTERVOLTAGE[V] Figure 5. Typicalransfercharacerisic (VCE=2V) Tvj,JUNCTIONTEMPERATURE[ C] Figure 6. Typicalcollecoremiersauraionvolageas afuncionofjuncionemperaure (VGE=15V) 1E+4 d(off) f 1E+4 d(off) f,switchingtimes[ns] 1 1,SWITCHINGTIMES[ns] IC,COLLECTORCURRENT[A] Figure 7. Typicalswichingimesasafuncionof collecorcurren (induciveload,tvj=1 C,VGE=/18V, RG=1.2Ω,DynamicescircuiinFigureE) RG,GATERESISTOR[Ω] Figure 8. Typicalswichingimesasafuncionofgae resisance (induciveload,tvj=1 C,VGE=/18V, IC=A,DynamicescircuiinFigureE) Rev.2.1,216729

9 IHWN12E1 Resonan SofSwiching Series 1E+4 7. yp. VGE(h), GATEEMITTER THRESHOLD VOLTAGE [V], SWITCHING TIMES [ns] d(off) f Tvj, JUNCTION TEMPERATURE [ C] Figure 9. Typical swiching imes as a funcion of juncion emperaure (inducive load, VGE=/18V, IC=A, RG=1.2Ω, Dynamic es circui in Figure E) Eoff, Tvj = C Eoff, Tvj = 1 C Eoff, Tvj = 1 C Eoff.5 E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] Figure 1. Gaeemier hreshold volage as a funcion of juncion emperaure (IC=.8mA) Tvj, JUNCTION TEMPERATURE [ C] IC, COLLECTOR CURRENT [A] RG, GATE RESISTOR [Ω] Figure 11. Typical swiching energy losses as a funcion of collecor curren (inducive load, VGE=/18V, RG=1.2Ω, Dynamic es circui in Figure E) Figure 12. Typical swiching energy losses as a funcion of gae resisance (inducive load, Tvj=1 C, VGE=/18V, IC=A, Dynamic es circui in Figure E) 9 Rev. 2.1,

10 IHWN12E1 Resonan SofSwiching Series.6 16 VCC = 24V VCC = 96V 14.5 VGE, GATEEMITTER VOLTAGE [V] E, SWITCHING ENERGY LOSSES [mj] Eoff, 12,5A Eoff, A Eoff, A Tvj, JUNCTION TEMPERATURE [ C] QGE, GATE CHARGE [nc] Figure 13. Typical swiching energy losses as a funcion of juncion emperaure (inducive load, VGE=/18V, IC=A, RG=1.2Ω, Dynamic es circui in Figure E) Figure 14. Typical gae charge (IC=A) 1 Zh(jc), TRANSIENT THERMAL IMPEDANCE [K/W] Cies Coes Cres C, CAPACITANCE [pf] single pulse.1.1 1E6 3 VCE, COLLECTOREMITTER VOLTAGE [V] D=.5.1 1E5 1E p, PULSE WIDTH [s] Figure 15. Typical capaciance as a funcion of collecoremier volage (VGE=V, f=1mhz) Figure 16. IGBT / Diode ransien hermal impedance (D=p/T) 1 Rev. 2.1,

11 IHWN12E1 Resonan SofSwiching Series 3.5 Tvj= C Tvj=1 C IF=12.5A IF=A IF=A VF, FORWARD VOLTAGE [V] IF, FORWARD CURRENT [A] VF, FORWARD VOLTAGE [V] Tvj, JUNCTION TEMPERATURE [ C] Figure 17. Typical diode forward curren as a funcion of forward volage 11 Figure 18. Typical diode forward volage as a funcion of juncion emperaure Rev. 2.1,

12 IHWN12E1 Resonan SofSwiching Series Package Drawing PGTO Rev. 2.1,

13 IHWN12E1 Resonan SofSwiching Series Tesing Condiions 9% VGE VGE() I,V VCE V GE % IC I () I CE 2% I C Figure C.Typical swiching behavior in resonan applicaions VCE() f d(off) Figure A. VGE() 9% VGE Figure D. IC() R CC 1% I C 2 VCE () E = off Figure E. Dynamic es circui Resonan capacior, Cr Damping resisor, R VCE x IC x d Figure B. 13 Rev. 2.1,

14 IHWN12E1 Resonan SofSwiching Series Revision Hisory IHWN12E1 Revision: , Rev. 2.1 Previous Revision Revision Dae Subjecs (major changes since las revision) Final daa shee Published by Infineon Technologies AG München, Germany Infineon Technologies AG 216. All Righs Reserved. Imporan Noice The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics ( Beschaffenheisgaranie ). Wih respec o any examples, hins or any ypical values saed herein and/or any informaion regarding he applicaion of he produc, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion warranies of noninfringemen of inellecual propery righs of any hird pary. In addiion, any informaion given in his documen is subjec o cusomer s compliance wih is obligaions saed in his documen and any applicable legal requiremens, norms and sandards concerning cusomer s producs and any use of he produc of Infineon Technologies in cusomer s applicaions. The daa conained in his documen is exclusively inended for echnically rained saff. I is he responsibiliy of cusomer s echnical deparmens o evaluae he suiabiliy of he produc for he inended applicaion and he compleeness of he produc informaion given in his documen wih respec o such applicaion. For furher informaion on he produc, echnology, delivery erms and condiions and prices please conac your neares Infineon Technologies office ( Please noe ha his produc is no qualified according o he AEC Q1 or AEC Q11 documens of he Auomoive Elecronics Council. Warnings Due o echnical requiremens producs may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares Infineon Technologies office. Excep as oherwise explicily approved by Infineon Technologies in a wrien documen signed by auhorized represenaives of Infineon Technologies, Infineon Technologies producs may no be used in any applicaions where a failure of he produc or any consequences of he use hereof can reasonably be expeced o resul in personal injury. 14 Rev. 2.1,